Crystalline SiC on Si Technology: Applications and Perspectives Francesca Iacopi, Li Wang, Glenn Walker, Leonie Hold, Ben Cunning, Jisheng Han, Philip Tanner, Alan Iacopi, Sima Dimitrijev Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan 4111, Queensland, Australia
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Crystalline SiC on Si Technology: Applications and Perspectives
Francesca Iacopi, Li Wang, Glenn Walker, Leonie Hold,
Ben Cunning, Jisheng Han, Philip Tanner, Alan Iacopi, Sima Dimitrijev Queensland Micro- and Nanotechnology Centre,
Griffith University, Nathan 4111, Queensland, Australia
• Introduction: » WBG semiconductors and SiC on Si platform
• 3C-SiC on Si at Griffith
» Queensland Microtechnology Facility » EPI process and characteristics
• SiC application for MEMS
• SiC as intermediate layer for III-N and graphene on Si
• Summary
Queensland Micro and Nanotechnology Centre FI
Outline
Why SiC?
Queensland Micro and Nanotechnology Centre FI 3
SiC: wide bandgap, highly efficient in areas where Si is leaky (hi V, harsh environment)
Not supposed to replace, but to complement Si grow c-SiC on Silicon wafers
Ge 0.66eV
SiC (& other WBG) properties
1. Electronic: low leakage/high efficiency switches 2. Optoelectronic: emission/detection in the blue/UV 3. Mechanical: high E, SiC hi fracture strength 4. High chemical and T resistance (SiC, ZnO..) 5. Biocompatible and possible to functionalize (SiC)
6. Piezo-electrical: most wide-bandgap Note: best and most controlled properties when in c- form (polytypes)
“Green” applications: power electronics (energy), lighting (general, automotive, aerospace), micro –systems for remote
sensing and imaging (energy, environment, medical….)
Queensland Micro and Nanotechnology Centre FI
• c-SiC grown as 3C (cubic poly-type) on Si (20% lattice mismatch)
• 3C-SiC on Si(111) hexagonal pattern matching 2H-GaN (3%
mismatch only!)
» good quality 3C-SiC on Si provide large platform opportunities 3C-SiC on Si for MEMS and NEMS III-N on Si (opto and power electronics)
Thermal conductivity W cm-1 K-1 1.3 3.6 1.3 2.85 0.25
3C-SiC on Silicon
Queensland Micro and Nanotechnology Centre FI
Memory
Devices
and Circuits Power and High
Frequency
Devices
and Circuits
Optoelectronics
Solar cells
Sensors/actuators
for harsh
environments
Queensland Micro and Nanotechnology Centre FI
Why c-SiC on Si? Low cost and integration!
3C-SiC on Si
Platform Technologies
Graphene on Si
technologies
Heterogeneous integration w
CMOS
Logic Devices and Circuits,
use mainstream packaging,
avoid LLO, use 3D/TSVs
Substrates for wide-band-gap semiconductors?
• SiC » device quality SiC/GaN epilayers » 4H and 6H polytypes » Only up to 4”, expensive (3” wafer ~$1000 » + $1500/epilayer) » 6” pgrm on hold (ie Cree) » Transparent, good thermal conductivity » Bulk machining available but non std
Queensland Micro and Nanotechnology Centre FI
Sapphire (Al2O3)
» up to 6” (8”, 12”possible), less expensive than SiC
» Transparent
» worst thermal conductivity
» Insulating
» Mismatch, but epi III-V optimized on c-plane
Substrates for wide-band-gap semiconductors?
Queensland Micro and Nanotechnology Centre FI
Silicon
» Inexpensive, electronic grade quality, large area (>300mm)
» Processing CMOS and bulk machining infrastructure available
» Non- transparent, low thermal conductivity
» Main issues: epitaxial relationship (III-V), lattice and thermal mismatch
Memory
Devices
and Circuits Power and High
Frequency
Devices
and Circuits
Optoelectronics
Solar cells
Sensors/actuators
for harsh
environments
Queensland Micro and Nanotechnology Centre FI
Interest of 3C-SiC on Si: Low cost and integration
3C-SiC on Si
Platform Technologies
Graphene on Si
technologies
Heterogeneous integration w
CMOS
Logic Devices and Circuits,
use mainstream packaging,
avoid LLO, use 3D/TSVs
Queensland Micro and Nanotechnology Centre FI
Interest of 3C-SiC on Si: Low cost and integration
CMOS –based
device
SiC –based
device
Heterogenous
Device/
Microsystem!
Through-
Silicon-
Vias (TSV)
SiC on Si TECHNOLOGY @ GRIFFITH
Queensland Micro and Nanotechnology Centre FI
• LPCVD deposition demonstrated on large Si wafers (up to 8”, MkI) • Up to 300mm wafers (MkII, SPTS batch reactor 2012) • Optimised carbonisation steps robust barrier on Si • Low T growth (1000˚C) • Exceptional uniformity: 1.5% across 6” wafer • p and n –type doping:
» Unintentional n- type doping level ~E+18 cm-3
» n- type doping range E+17 – 5E+19 cm-3 » p-type doping range 3E+17 – 2E+19 cm-3
• Deposition and further processing in clean room environment
Queensland Micro and Nanotechnology Centre FI
SiC on Si: Griffith technology
L.Wang et al., Thin Solid Films 2011
L.Wang et al, Journal of Crystal Growth, in press
Queensland Microtechnology Facility Unique facility in Australia, focus: c-SiC on silicon