1. Purification by sublimation 2. Synthesis 3. Sublimation or chemical vapor transport Crystal growth by vapor transport Source material Crystal T C T S Temperature V » 1-10 mm/day Growth e.g. D T = 3K Nucleation e.g. D T = 10K Sublimation T = source temperature S T = crystal temperature C D T = T - T S C Length 1E-3 0.01 0.1 1 1E-4 1E-3 0.01 V max (mm/h) Partial argon pressure (atm) Cd: 290 °C Zn: 420 °C Mg: 590 °C Cd Zn Mg 0.5 mm 0.5 mm Raman spectra of ZnSe crystals with different isotope composition Normalized intensity [arb. Units] LC Raman Shift [cm ] -1 Zn Se Zn Se Zn Se Zn Se Zn Se Zn Se 64 80 nat nat 68 76 dis 80 68 dis 68 80 64 76 Zn Se ZnO, ZnSe, ZnTe, CdS, CdSe, Ag S, CuCl, CuBr, 2 CuI, AgI, TiO , C , C , 2 60 70 Zn, Cd, Mg etc. Crystals grown: KBr GeS TlBr A view of vapor growth equipment 64 76 Zn Se ZnSe, ZnTe, CdS 10 mm 64 18 Zn O
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1. Purification by sublimation
2. Synthesis
3. Sublimation or chemical vapor transport
Crystal growth by vapor transport
Sourcematerial
Crystal
TCTS
Temperature
V » 1-10 mm/day
Growthe.g. DT = 3KNucleation
e.g. DT = 10KSublimation
T = source temperatureST = crystal temperatureCDT = T - TS C
Len
gth
1E-3 0.01 0.1 1
1E-4
1E-3
0.01
Vm
ax(m
m/h
)
Partial argon pressure (atm)
Cd: 290 °C
Zn: 420 °C
Mg: 590 °C
Cd
Zn
Mg
0.5 mm
0.5 mm
Raman spectra of ZnSe crystals withdifferent isotope composition
Nor
mal
ized
in
ten
sity
[ar
b. U
nit
s]
LC Raman Shift [cm ]-1
Zn Se
Zn Se
Zn Se
Zn Se
Zn Se
Zn Se
64 80
nat nat
68 76
dis 80
68 dis
68 80
64 76Zn Se
ZnO, ZnSe, ZnTe, CdS, CdSe, Ag S, CuCl, CuBr,2
CuI, AgI, TiO , C , C ,2 60 70
Zn, Cd, Mg etc.
Crystals grown:
KBr GeS TlBr
A view of vapor growth equipment
64 76Zn Se
ZnSe, ZnTe, CdS
10 mm
64 18Zn O
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