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P. Crump, C. Frevert, H. Wenzel, G. Erbert and G. Tränkle Cryolaser: Innovative cryogenic diode laser bars optimized for emerging ultrahigh-power laser applications
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Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

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Page 1: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

P. Crump, C. Frevert, H. Wenzel, G. Erbert and G. Tränkle

Cryolaser: Innovative cryogenic diode laser bars optimized for

emerging ultra‐high-power laser applications

Page 2: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Contents

Introduction to the Ferdinand-Braun-Institut (FBH)

Project Cryolaser

Motivation

Technical goals

Plausibility argument

Work packages

Performance status

Conclusions

01/07/2012 2

Page 3: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Contents

Introduction to the Ferdinand-Braun-Institut (FBH)

Project Cryolaser

Motivation

Technical goals

Plausibility argument

Work packages

Performance status

Conclusions

01/07/2012 3

Page 4: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

FBH: world-wide recognized technology center

International center for MMICs and high-power diode lasers

covering all competencies: design, epitaxy, wafer process, characterization, qualification

Full value chain: from design to modules to manufacturing of pilot series

Successful track record in knowledge and technology transfer of innovative product

ideas and technologies:

Strategic partnership with industry (Jenoptik, Trumpf, TESAT Spacecom….)

Successful university cooperation model (Technische Uni Berlin, Humboldt Uni Berlin …)

Founder of spin-offs (Jenoptik Diode Lab, eagleyard Photonics, Lumics …)

01/07/2012 4

Page 5: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

FBH: Mission

Applied research and development on III-V semiconductor devices, circuits and

modules for microwave technology and optoelectronics

Close cooperation with universities, research institutes and enterprises

Technology transfer

Customer- and service-focused

Part of value chains

Beyond demonstrators: pilot & small-scale series

Academic and industrial education & training

01/07/2012 5

Page 6: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

01/07/2012 6

Facts & Figures

Ferdinand-Braun-Institut, Leibniz-Institut für

Höchstfrequenztechnik (FBH)

Institute within Forschungsverbund Berlin e.V., member

of the Leibniz Association

Located in Berlin, Germany

Shareholders

State of Berlin / Federal Republic of Germany

Founded in 1992

~ 240 Staff (including 125 scientists & PhD students)

Academic partners include:

Technische Universität Berlin

Humboldt-Universität zu Berlin

Goethe-Universität Frankfurt am Main

Quality assurance

ESA-qualified for applications in space

Integrated management system

(quality, environment, occupational health & safety)

Page 7: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

01/07/2012 7

Research program

Microwave components & systems

GaN FETs & MMICs

MMICs for frontends up to 100 GHz

100+ GHz: THz electronics (InP HBT)

Microwave plasmas

GaN power electronics

FETs & diodes up to 1000 V

GaAs diode lasers

High-power diode lasers (0.63 - 1.2 µm)

Hybrid diode laser systems (rgb)

Laser sensors & metrology

GaN LEDs and GaN diode lasers

UV & true blue

III-V semiconductor technology

Epitaxy & process technology

Mounting & packaging

Page 8: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

01/07/2012 8

Research program

Microwave components & systems

GaN FETs & MMICs

MMICs for frontends up to 100 GHz

100+ GHz: THz electronics (InP HBT)

Microwave plasmas

GaN power electronics

FETs & diodes up to 1000 V

GaAs diode lasers

High-power diode lasers (0.63 - 1.2 µm)

Hybrid diode laser systems (rgb)

Laser sensors & metrology

GaN LEDs and GaN diode lasers

UV & true blue

III-V semiconductor technology

Epitaxy & process technology

Mounting & packaging

Page 9: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

01/07/2012 9

Research program

Microwave components & systems

GaN FETs & MMICs

MMICs for frontends up to 100 GHz

100+ GHz: THz electronics (InP HBT)

Microwave plasmas

GaN power electronics

FETs & diodes up to 1000 V

GaAs diode lasers

High-power diode lasers (0.63 - 1.2 µm)

Hybrid diode laser systems (rgb)

Laser sensors & metrology

GaN LEDs and GaN diode lasers

UV & true blue

III-V semiconductor technology

Epitaxy & process technology

Mounting & packaging

For compact,

efficient pulsers?

Page 10: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Contents

Introduction to the Ferdinand-Braun-Institut (FBH)

Project Cryolaser

Motivation

Technical goals

Work packages

Performance status

Conclusions

01/07/2012 10

Page 11: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Contents

Introduction to the Ferdinand-Braun-Institut (FBH)

Project Cryolaser

Motivation

Technical goals

Work packages

Performance status

Conclusions

01/07/2012 11

Page 12: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Motivation: help enable power generation via HEC-DPSSL

A new generation of high-energy-class laser systems are in development

For example, LIFE and HiPER, using LIF as a low-carbon energy source

Alternative HEC-DPSSL system architectures in preparatory phase

LIFE using Nd-doped gain media, pumped at ~872nm (~ 100-500µs)

HiPER using Yb-doped gain media, pumped at ~940nm (~ 1-2ms)

Improved components needed to reach full performance targets

12/09/2012 12

Page 13: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Challenge: need ultra-high performance diode lasers

12/09/2012 13

[1] A. Kohl et al. Proc. SPIE 7835, 78350Q (2010) [2] J Junghans et al. Proc. SPIE 8241, 82410E (2012)

[3] J. G. Bai et al. Proc. SPIE 8241, 82410W (2012) [4] R. Feeler et al. Proc. SPIE 7916, 791608 (2011).

Parameter State of the art

QCW Bars

LIFE Targets [4]

Optical power density > 10 kW/cm2 [1,2] > 25 kW/cm2

Power conversion efficiency

at the operating point

> 65% [1,3] > 75%

LIF needs diode lasers to deliver high density of ”useful photons“ at very high efficiency

Diode lasers generate all the optical energy in the system:

high efficiency crucial for high “net power out“

Solid state lasers must be appropriately pumped (“useful photons”):

at a precise wavelength (872nm for Nd:YAG, 940nm for Yb:YAG)

at sufficiently high power density

These ultra-high performance sources do not currently exist

Massive cost reduction also needed (target: < 0.01 €/W) [4]

Page 14: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Goal: develop novel diode laser technology that can fulfil LIF goals

Approach: Leverage diode temperatures < 0°C to enable performance step-change

Cost reduction (€/W) via high power per bar, internal gratings

Program goal: step-improvement in diode lasers for LIF

12/09/2012 14

Parameter State of the art

QCW Bars

Program

goals

Optical power per bar

~ 300W (commercial) [1,2]

~ 1kW (lab) [3,4]

> 1.6 kW

Power conversion efficiency

at the operating point, E

> 65% [1,3] > 80%

Spectral width (95% power) > 5 nm < 1 nm

Heatsink temperature 295 K 200K

[1] A. Kohl et al. Proc. SPIE 7835, 78350Q (2010) [2] E. Deichsel et al. Proc. SPIE 6876 68760K (2008)

[3] J. G. Bai et al. Proc. SPIE 8241, 82410W (2012) [4] D. Schröder et al. Proc. SPIE 6456, 64560N (2007).

Page 15: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

12/09/2012 15

Ertel et al. Opt. Expr. 19(27) 2011

Higher efficiency and gain for Yb:YAG at 175K

Thermal lensing also strongly reduced

T < 0°C beneficial for solid state lasers (especially Yb)

Page 16: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

12/09/2012 16

Ertel et al. Opt. Expr. 19(27) 2011

Higher efficiency and gain for Yb:YAG at 175K

Thermal lensing also strongly reduced

T < 0°C beneficial for solid state lasers (especially Yb)

T < 0°C infrastructure potentially acceptable

... provided performance gain is sufficient

... argument also applies to diode laser pump sources

Page 17: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

12/09/2012 17

Absorption spectrum

Narrower at 175K

Pump lasers with small

spectral widths boost efficiency

Also substantially easier (lower handling

cost) In very large systems

Narrow absorption, so narrow pump spectra needed

Ertel et al. Opt. Expr. 19(27) 2011

Page 18: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

12/09/2012 18

Ertel et al. Opt. Expr. 19(27) 2011

Absorption spectrum

Narrower at 175K

Pump lasers with small

spectral widths boost efficiency

Also substantially easier (lower handling

cost) In very large systems

Narrow absorption, so narrow pump spectra needed

Diode lasers with integrated wavelength stabilisation attractive

... provided performance and cost not compromised

Page 19: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

12/09/2012 19

Research

Technology development

Prototype construction

(872nm and 940nm)

Assessment of prototypes

Confirm suitability for LIFE (Nd)

Assessment of prototypes

Confirm suitability for HiPER (Yb)

Funding via

SAW-Competition

Topic: „High risk“

Team

Program start: Jan 2012

Page 20: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Contents

Introduction to the Ferdinand-Braun-Institut (FBH)

Project Cryolaser

Motivation

Technical goals

Plausibility argument

Work packages

Performance status

Conclusions

01/07/2012 20

Page 21: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

2kW QCW bars plausible - single emitter extrapolation

01/07/2012 21

[1] P. Ressel et al. IEEE Photon. Technol. Lett 17(5) pp. 962-964 (2005)

[2] P Crump et al. Proc. SPIE 8241, 82410U (2012).

State of the art diode laser technology enables very high peak powers

High quality design and technology essential (low defect densities)

Laser facets with high damage thresholds are crucial (facet passivation) [1]

FBH 100µm stripe single emitters at 975nm demonstrate very high powers [2]:

Peak CW power > 20W

Peak QCW power > 30W (100µs, 100Hz)

Reliable CW power to ~ 20W („proof of concept“)

Consistent with QCW power per bar > 1600 W

Assuming 1-cm bars with > 80 single emitters

0 20 40 60 800

5

10

15

20

25

30

35

40

CW

100µs 100Hz

pow

er

P (

W)

current I (A)

Page 22: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

1kW QCW bars demonstrated in lab since 2007

01/07/2012 22

[1] D. Schröder et al. Proc. SPIE 6456, 64560N (2007).

Sandwich of 2x Microchannel coolers

1cm bar 44% Fill factor

(~ 22W/100µm)

Jenoptik 2007 [1]

Page 23: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

1kW QCW bars demonstrated in lab since 2007

01/07/2012 23

[1] D. Schröder et al. Proc. SPIE 6456, 64560N (2007).

Sandwich of 2x Microchannel coolers

1cm bar 44% Fill factor

(~ 22W/100µm)

Jenoptik 2007 [1]

Challenges:

Efficiency low at 1kW ~ 35%

Strong cooling necessary (2x microchannel coolers!)

Page 24: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

25°C Bars with E > 70% obtained in lab since mid 2000

01/07/2012 24

FBH Bars E > 70% at 808nm [2]

[2] P Crump et al. IEEE PTL 20(16) pp1378-1380 (2008)

FBH Bars E > 70% at 940nm [1]

[1] A Knigge et al. Electron, Lett. 41 pp250-251 (2005)

Page 25: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Efficiency > 80% plausible – single emitter demonstration

01/07/2012 25

[1] P. Crump et al. Proc. CLEO/QELS, Baltimore USA, p. 1 (2006)

nLight 2006 [1]

T ~ 200K

E ~ +10%

Page 26: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Efficiency > 80% plausible – single emitter demonstration

01/07/2012 26

[1] P. Crump et al. Proc. CLEO/QELS, Baltimore USA, p. 1 (2006)

nLight 2006 [1]

Challenges:

Heavily optimised for peak efficiency, power low ~ 2.5W/100µm Short cavity lengths, wide far field: not appropriate for 20W/100µm!

Results quoted with package resistance subtracted (few %)

Page 27: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

FBH Technology: Low loss gratings inside the diode laser

01/07/2012 27

DFB-BA Laser

600 µm3000 µm

12

mW = 90 µm

HR coating

AR coating R < 10-3

integrated grating

60 nm

Page 28: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

High power and efficiency demonstrated in DFB-BA at FBH

01/07/2012 28

Schultz et al., Appl. Phys. Lett. 100, 201115 (2012)

Spectrum narrowed < 1nm Conversion efficiency E > 60%

< 5% reduced c.f. reference devices

Page 29: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

High power and efficiency demonstrated in DFB-BA at FBH

01/07/2012 29

Schultz et al., Appl. Phys. Lett. 100, 201115 (2012)

Challenge: restricts design space, that is:

…. not all designs are consistent with internal gratings

Conversion efficiency E > 60%

< 5% reduced c.f. reference devices Spectrum narrowed < 1nm

Page 30: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Contents

Introduction to the Ferdinand-Braun-Institut (FBH)

Project Cryolaser

Motivation

Technical goals

Plausibility argument

Work packages

Performance status

Conclusions

01/07/2012 30

Page 31: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Work Package 1: Device design for efficiency and power

01/07/2012 31

0 10 200

10

20

30

L = 4 mm

W= 90 µm

optimized

original

pow

er,

P (

W)

current, I (A)

0.0

0.2

0.4

0.6

0.8

1.0

Pow

er

convers

ion e

ffic

iency

[1] P Crump et al. Proc. SPIE 8241, 82410U (2012).

Design challenges

Understand, leverage material changes at 200K

High efficiency, sustained to high powers

Compatible with internal gratings

Compatible with long life time

Novel laser designs in development

Promising initial results (no DFB)

Optimization to follow

Design goals: use 200K to enable

E(Peak) ~ 90%

E(20W/100µm) ~ 85%

E(DFB) > 80%

FBH 25°C Simulation

Page 32: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Work Package 2: Manufacturing of prototypes

01/07/2012 32

Combine efficient designs with grating technology, wavelength targeting for 200K

Construct high-fill factor laser bars, as well as single emitters

Passivate facets (very high damage threshold)

Package

Deliver for assessment

First devices completed August 2012

Page 33: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Work Package 3: Characterisation

01/07/2012 33

Development of custom current supply (subcontract Amtron GmbH, Germany)

Current: 0 - 2000A

Pulse width: 100µs - 2ms

Repetition rate: 10 - 20Hz

Construction of custom test station

Passive cooling (circulating fluid)

T: 200-300K

Current status: T > 220K (-50°C)

Controlled environment

It. 1 Characterization of prototypes

„Time= 0“ Benchmarking

calibration of design

First testing started September 2012

-200

0

200

400

600

800

1000

1200

1400

1600

0 50 100 150 200

Time (µs)

Cu

rre

nt

(A)

0 - 1.5kA, 100µs current pulses

Page 34: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Contents

Introduction to the Ferdinand-Braun-Institut (FBH)

Project Cryolaser

Motivation

Technical goals

Plausibility argument

Work packages

Performance status

Conclusions

01/07/2012 34

Page 35: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

12/09/2012 35

Initial test of 940-nm FBH baseline single emitters to -50°C

4mm x 90µm

Date shown for 940nm single emitter

Stripe width here is 90µm

Bars contain ~ 80x such lasers

QCW test = 400µs 10Hz

E (Peak, 25°C) = 68%

Efficiency ~ 10% improved at -50°C

E (Peak) = 78%

Power scaling at -50°C:

10W/100µm ~ 800W bar, E = 77%

20W/100µm ~ 1.6kW bar, E = 72%

Page 36: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

12/09/2012 36nh

Initial test of 9xx-nm single emitters at T = -50°C

Design target: 940nm at 200K

0%

25%

50%

75%

100%

935 945 955 965

Wavelength (nm)

Inte

ns

ity

/ I

max

E (Peak) = 77% at -50°C

E (10W/100µm) = 75% 50% = 950.6 nm (6nm)

95% = 4.8 nm

4mm x 200µm

400µs 10Hz

0%

10%

20%

30%

40%

50%

60%

70%

80%

0

5

10

15

20

25

0 5 10 15 20

Eff

icie

nc

y,

E(%

)

Po

we

r, P

(W

)

Current (A)

T = 25°C

T = -50°C

4mm x 200µm

400µs 10Hz

4mm x 200µm

400µs 10Hz

Page 37: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

0%

10%

20%

30%

40%

50%

60%

70%

80%

0

5

10

15

20

25

30

0 5 10 15 20

Eff

icie

nc

y,

E(%

)

Po

we

r, P

(W

)

Current (A)

T = 25°C

T = -50°C

12/09/2012 37

Initial test of 88x-nm single emitters at T = -50°C

Design target: 872nm at 200K

E (Peak) = 73% at -50°C

E (10W/100µm) = 71% 50% = 878 nm (6nm)

95% = 5.0 nm

0%

25%

50%

75%

100%

860 870 880 890

Wavelength (nm)

Inte

ns

ity

/ I

max

4mm x 200µm

400µs 10Hz

4mm x 200µm

400µs 10Hz

Page 38: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

0

200

400

600

800

1000

1200

0 500 1000 1500 2000

Current (A)

Po

we

r, P

(W

)

0%

10%

20%

30%

40%

50%

60%

70%

Eff

icie

nc

y,

E

12/09/2012 38

Initial 25°C Test of FBH “Baseline” Bars: E(1kW) = 43%

25°C 100µs 20Hz

45 x 100µm, 4mm RL, 940nm

Passive cooling (CS Mount)

Long cavity and higher efficiency enable > 1kW passively cooled

Next: better design, increased fill factor, lower temperatures

Page 39: Cryolaser: Innovative cryogenic diode laser bars optimized ... · L = 4 mm W= 90 µm optimized original) current, I (A) 0.0 0.2 0.4 0.6 0.8 1.0 y [1] P Crump et al. Proc. SPIE 8241,

Contents

Introduction to the Ferdinand-Braun-Institut (FBH)

Project Cryolaser

Motivation

Technical goals

Plausibility argument

Work packages

Performance status

Conclusions

01/07/2012 39

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Conclusions

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HEC-DPSSL systems require higher performance diode laser pumps

LIF-based systems for power generation have the most stringent requirements

Project „Cryolaser“ targets the required step-improvement in performance

Performance improvement to be enabled by customized design for T < 0°C

Would make use of T < 0°C architecture in discussion for solid state crystals

Technical goals: QCW diode laser pump bars at 872nm and 940nm

Strategy: High-risk, high-impact development, targeting performance breakthough

Power per bar > 1.6kW at a conversion efficiency of> 80%

Spectral width < 1 nm (95% power content)

Program goals are a plausible extrapolation of current diode laser results

Performance to be confirmed by testing at LLNL, STFC

Initial FBH prototype testing started

Bars with 45% fill factor: Pmax > 1kW at 25°C

Single emitters at -50°C: E > 70% at 10-20W per 100µm (> 1.5 kW/ bar)

Much to be done!

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Thank you for your attention!

Dr. Paul Crump

Ferdinand-Braun-Institut

Leibniz-Institut für Höchstfrequenztechnik

Gustav-Kirchhoff-Str. 4

12489 Berlin

[email protected]

www.fbh-berlin.de

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This work is funded by the Leibniz-Association.

Funding was awarded based on the SAW competition

Project number: SAW-2012-FBH-2

Topic area: "Particularly innovative and high-risk projects"