1 Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors Jun-Sik Yoon 1 , Kihyun Kim 1 , and Chang-Ki Baek 1, 2 1 Department of Creative IT Engineering and Future IT Innovation Lab, Pohang University of Science and Technology, Pohang 790-784, Korea 2 Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea Figure S1. BTB generation rates of the (a) conventional (D NW = 5 nm, H NW = 100 nm) and (b) CS (D NW = 20 nm, H NW = 400 nm) TFETs with different V gs of 0.0, 0.5, 1.0, and 1.5 V at the fixed V ds of 0.5 V
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