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Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad
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COMSATS Institute of Information Technology Virtual campus Islamabad. Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012. DC Analysis of Transistor Circuits-I. Lecture No: 16 Contents: DC Current and Voltage Analysis. Examples and Exercises. - PowerPoint PPT Presentation
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Page 1: COMSATS Institute of Information Technology Virtual campus Islamabad

Dr. Nasim ZafarElectronics 1

EEE 231 – BS Electrical EngineeringFall Semester – 2012

COMSATS Institute of Information TechnologyVirtual campus

Islamabad

Page 2: COMSATS Institute of Information Technology Virtual campus Islamabad

DC Analysis of Transistor Circuits-I

Lecture No: 16

Contents:

DC Current and Voltage Analysis.

Examples and Exercises.

 

 

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NPN Transistor

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Operation of an NPN Transistor:

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Large current

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Modes of Operation of a BJT Transistor:

Mode: B-E Junction: B-C Junction:

cutoff reverse biased reverse biased

Active(linear) Forward Biased Reverse Biased

saturation forward biased forward biased

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Transistor Characteristics:

IB

IC

IE

OutputCircuit

InputCircuit

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DC Current and Voltage Analysis:

NPN

collector

emitter

baseIB

IE

IC

Small Current

Large current

+ VBE

-

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PNP

collector

emitter

baseIB

IE

IC

Small Current

Large current

+ VBE

-

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DC Current and Voltage Analysis:

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DC Analysis of Transistor Circuits.

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DC Analysis of Transistor Circuits:

The DC Analysis of the transistor circuits involves solving for all

(or most of) the currents and voltages in the circuit.

The most important DC parameters to solve are IC and VCE.

The “Q-point” of a transistor, gives the values of IC and VCE that are present in the given transistor circuit.

The first step in the DC analysis, of any transistor circuit, is to solve for one of the unknown currents, IB, IC, or IE.

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Page 11: COMSATS Institute of Information Technology Virtual campus Islamabad

DC Analysis of Transistor Circuits:

We need a set of equations – a model of the transistor – to be used in transistor circuit theory.

In a basic transistor circuit, we have three terminals - collector, base and the emitter.

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DC Analysis of Transistor Circuits:

In a basic transistor circuit, we have three terminals - collector, base and emitter; and correspondingly we have:

Three possible DC voltages: VBE, VCB, VCE - but only two are independent due to KVL; and

Three transistor DC currents: IB, IC, IE - but only two are independent due to KCL.

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DC Analysis of Transistor Circuits:

If we solve for one of these unknowns, the other two can be found by using the current gain equations and the given value of .

The recommended way of solving for one of the currents is to write a Kirchhoff's Voltage Law (KVL) loop.

The KVL states the sum of all voltages around a closed loop equals zero.

Va = V1 + V2

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BJT-Current and Voltage Analysis:

When the base-emitter junction, in an NPN transistor is forward biased, it is like a forward biased diode and has a forward-voltage drop of:

VBE = 0.7 V

Since the emitter is grounded, by Kirchhoff’s voltage law, the voltages in the input circuit are:

VBB = VRS + VBE

VRS = VBB -- VBE

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NPN

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BJT-Current and Voltage Analysis:

Using Ohm’s law: VRS = IB RS

IB RS = VBB -- VBE

The drop across RL is:

VRL = IC RL

The collector voltage is:VCE = VCC -- IC RL

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NPN

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DC Analysis of Transistor Circuits

Examples and Exercises:

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Summary of equations for a BJT:

IE IC

IC = IB

is the current gain of the transistor 100-200

VBE = 0.7V(NPN) VBE = -0.7V(PNP)

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Example 4-1: Common-Emitter Configuration:

Given: IB = 50 A , IC = 3.65 mA

Determine: IE , dc and dc

Solution:

IE= IB+ IC= 50 A + 3.65 mA= 3.7 mA

dc = IC / IB = 3.65 mA / 0.05 mA = 73

dc = IC / IE = 3.65 mA/ 3.7 mA = 0.986

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Exercise 4-1

A certain transistor has a dc of 200. When the base current IB = 50 A. Determine the collector current. Also calculate dc .

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Example 4-2

A given NPN transistor has dc = 150. Determine IB, IC , IE , VCB , VCB and VBE in the circuit shown below (ignore ac signal):

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Graphical construction for determining the dc collector current IC

and the collector-to-emitter voltage VCE.

BJT-Output Characteristics: Common Emitter Configuration.

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BJT-Output Characteristics: Common Emitter Configuration

We must operate the transistor in the linear region. A transistor’s operating point (Q-point) is defined by IC, VCE, and IB.

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Example 4.3

From the output characteristics of the common emitter configuration shown below, find ac and dc with an Operating point at IB=25 A and VCE =7.5V.

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Summary of DC Analysis:

Bias the transistor so that it operates in the linear region

B-E junction forward biased, C-E junction reversed biased.

Use VBE = 0.7 (NPN), IC IE, IC = IB

Write B-E, and C-E voltage loops.

For DC analysis, solve for IC, and VCE.

For design, solve for the resistor values (IC and VCE specified).

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