Competitive and Cost Effective Copper/Low-k Interconnect (BEOL) for 28nm CMOS Technologies 1 R. Augur , 1 C. Child, 2 J.H. Ahn, 1a T.J. Tang, 3 L. Clevenger, 1 D. Kioussis, 6 H. Masuda, 1a R. Srivastava, 4 Y. Oda, 6 H. Oguma, 3 R. Quon, 5 B. Kim, 1a H. Sheng, 6 S. Hirooka, 1 R. Gupta, 3 A. Thomas, 1a S.M. Singh, 1a Q. Fang, 7 R. Schiwon, 5 B. Hamieh, 3 E. Wornyo, 3 S. Allen, 7 E. Kaltalioglu, 5 G. Ribes, 1a G. Zhang, 1 T. Fryxell, 6 A. Ogino, 6 E. Shimada, 4 H. Aizawa, 4 H. Minda, 7 S.O. Kim, 6 T. Oki, 6 K. Fujii, 7 M. Pallachalil, 4 T. Takewaki. 3 C.K. Hu, 3 B. Sundlof, 1 D. Permana, 1 T. Bolom, 3 B. Engel, 1 C. Labelle, 3 B. Sapp, 3 T. Nogami, 3 A. Simon, 3 H. Shobha, 3 S. Gates, 3 E.T. Ryan, 3 G. Bonilla, 3 T. Daubenspeck, 3 T. Shaw, 3 G. Osborne, 3 A. Grill, 3 D. Edelstein, 3 D. Restaino, 3 S. Molis, 3 T. Spooner, 5 P. Ferreira, 3 G. Biery, 5 R. Sampson 1 GLOBALFOUNDRIES, 1a GLOBALFOUNDRIES Singapore, 2 Samsung Electronics, 3 IBM Microelectronics, 4 Renesas Electronics, 5 STMicroelectronics, 6 Toshiba America, 7 Infineon Technologies. October 5, 2010 email: [email protected]
13
Embed
Competitive and Cost Effective Copper/Low-k Interconnect ... · Competitive and Cost Effective Copper/Low-k Interconnect ... GLOBALFOUNDRIES, ... Competitive and Cost Effective Copper_Low-k
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
§ Reliability: Allow direct scaling of 32nm designs.
GLOBALFOUNDRIES, 28nm BEOL Integration
Challenges of node-on-node scaling for BEOL interconnect
§Maintain acceptable RC Performance, without degrading Yield or Reliability. § As wire dimensions approach the mean free path of conduction electrons, Cu
resistivity increases significantly.§ Offset this effect by reducing the k-value of the inter-metal dielectrics (ILD) à
ULK.§ ULK ILDs show degraded thermo-mechanical properties vs. dense ILD.§ Poor mechanical strength can lead to premature failure of the BEOL at the
package level. § Especially for large die ( ≥ 200mm2) and Pb-free C4/organic packages.
§ In addition, ULK ILDs tend to be easily damaged during processing àincreased integrated k-value, and re-entrant feature profiles.§ Re-entrant profiles are hard to fill with defect-free metallization;§ the defects degrade Yield and Reliability.
§A cost effective Interconnect technology was presented, for 28G and 28LP applications.§ 1x, 2x, 8x and 16x modules can be combined up to 11 total
copper wiring levels. §The technology uses conventional tools and processes for
metallization. §ULK inter-metal dielectric is used at minimum pitch (1x) and
2x levels. §Properties of the ULK were optimized for mechanical
strength, adhesion, k-value and damage resistance.§Full capacitance entitlement of the ULK was demonstrated.§Etch profile was optimized to enable defect-free metal fill. §High yields and robust reliability were achieved.
GLOBALFOUNDRIES, the GLOBALFOUNDRIES logo and combinations thereof are trademarks of GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. Other names used in this presentation are for identification purposes only and may be trademarks of their respective owners.
This work was performed at the IBM Microelectronics Div., Semiconductor Research & Development Centre, Hopewell Junction, NY 12533. The authors would like to thank W. Chu, I. Brooks, J. Benedict and their teams for technical assistance. The authors would also like to thank E. Kaste, R. Divakaruni, P. Gilbert, G. Patton and S. Venkatesan for their support.