Comparison of Elastic Modulus of Very Thin DLC Films Deposited by r.f.-PACVD and FVA Jin-Won Chung, Churl-Seung Lee, Dae Hong Ko * , Jun-Hee Hahn ** and Kwang-Ryeol Lee Future Technology Research Division, Korea Institute of Science and Technology * Department of Ceramics, Yonsei University ** Korea Research Institute of Standard Science
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Comparison of Elastic Modulus of Very Thin DLC Films Deposited by r.f.-PACVD and FVA
Comparison of Elastic Modulus of Very Thin DLC Films Deposited by r.f.-PACVD and FVA. Jin-Won Chung, Churl-Seung Lee, Dae Hong Ko * , Jun-Hee Hahn ** and Kwang-Ryeol Lee Future Technology Research Division, Korea Institute of Science and Technology - PowerPoint PPT Presentation
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Comparison of Elastic Modulus of Very Thin DLC Films Deposited by
r.f.-PACVD and FVA
Jin-Won Chung, Churl-Seung Lee, Dae Hong Ko*,
Jun-Hee Hahn** and Kwang-Ryeol Lee
Future Technology Research Division, Korea Institute of Science and Technology
* Department of Ceramics, Yonsei University
** Korea Research Institute of Standard Science
Applications of DLC Film
High Residual Compressive Stress of DLC Films
• Causes the Instability of the Coating• Affects the Physical Properties in Some Cases
DLC Coating
Self Delamination of DLC Films
• K.-R. Lee et al., Diam. Rel. Mater. 2 (1993) 208.• M.-W. Moon et al., Acta Mater., 50 (2002) 1219.
Key Idea of the Method
1
E
For Isotropic Thin Films
Measurement of Residual Stress
• Assumption– 1-D Treatment of Elastic
Equilibrium
– Sufficient Adhesion
– df << ds
– ds << R
sff
ssf
ss
ff
f
ssf
ddd
dY
R
dE
dE
d
dY
R
for 6
1
16
1
2
2
sff
ssf
ss
ff
f
ssf
ddd
dY
R
dE
dE
d
dY
R
for 6
1
16
1
2
2
R
ds
df
ss
ff
f
bf
sfbf
dY
dY
R
dY
3
2
ss
ff
f
bf
sfbf
dY
dY
R
dY
3
2
Measurement of Curvature
dx
dK
sin
dx
dK
sin
Key Idea of the Method
For Isotropic Thin Films
1
E
Preparation of DLC Bridge by Micro Fabrication
DLC film Deposition ( on SiO2 )
DLC PatterningSiO2 Isotropic Wet Etching
Wet Cleaning
Strain Estimation
Microstructure of DLC Bridges
C6H6, 10mTorr, -400V, 0.5m
150m
Strain of the Buckled Thin Films (I)
xco
E
)1(
t
D
xAxW
x
Wt
x
WD
c
o
c
x
WWx
x
WWx
2
2
2
2
4
4
4
2cos1)(
0
0 ,2
at
0 ,2
at
z
x
2A0
c
c
Stain of the Buckled Thin Films (II)
2
2
2
2
2 2
11
2
1
ox
x
x
A
dxx
W
x
W
cooA
E
2
1
0
131
1
13
1
,4
From
2
22
2
2
2
t
A
t
E
t
D
oo
c
c
c
ooA
E
2
1
DLC film Deposition
Cleavage along [011] Direction
Si Etching (by KOH Solution) Wet Cleaning
Strain Measurement
Preparation of Free-overhang by Anisotropic Substrate Etching
Elastic Modulus for Various Ion Energies
0 100 200 300 400 500 600 700 800
0
50
100
150
200
250
Pla
ne
Str
ain
Mod
ulus
(G
Pa
)
Negative Bias Voltage (V)
Nanoindentation t>1.0 ㎛
100 200 300 400 500 600
0
50
100
150
200
Bridge Method
Freehang Method
E/(1
-)
(GPa
)
Negative Bias Voltage (V)
Advantages of This Method
– Simple
– Completely Exclude the Substrate Effect
– Can Be Used for Very Thin Films
The possibility of elastic modulus measurement in very thin film
0 200 400 600 800 1000 1200
25
50
75
100
on Si on W / Si on SiO
2/ Si
Bia
xial
Ela
stic
Mod
ulus
(G
Pa
)
Thickness (nm)
a-C:H, C6H6 -400V
J.-W. Chung et al, Diam.Rel. Mater. 10 (2001) 2069.
ta-C (-50Vb)
Elastic Modulus of Very Thin Films
Synthesis of DLC Film by r.f.-PACVD
• RF PACVD (13.56MHz)
• Precursor : CH4
• Vb/ P1/2 : 20 ~ 233 Vb/mTorr1/2
• Substrate : P type (100) Si
• Film Thickness : ~ 50nm
Residual Stress & G-peak Position of Raman Spectra
0 50 100 150 200 2501520
1525
1530
1535
1540
1545
1550
1555
G-p
ea
k P
osi
tion
(cm
-1)
Vb / P1/2 (V/mTorr1/2)
0 50 100 150 200 250
0.5
1.0
1.5
2.0
2.5
3.0
Res
idua
l Com
pres
sive
Stre
ss (G
Pa)
Vb / P1/2 (V/mTorr1/2)
Biaxial Elastic Modulus
0 100 200 300 400 500 6000
50
100
150
200
Bia
xial
Ela
stic
Mod
ulus
(G
Pa)
Thickness (nm)
0 50 100 150 200 250
0.5
1.0
1.5
2.0
2.5
3.0
Res
idua
l Com
pres
sive
Str
ess
(GP
a)
Vb / P1/2 (V/mTorr1/2)
20
Biaxial Elastic Modulus
0 100 200 300 400 500 6000
50
100
150
200
Bia
xial
Ela
stic
Mod
ulus
(G
Pa)
Thickness (nm)
0 50 100 150 200 250
0.5
1.0
1.5
2.0
2.5
3.0
Res
idua
l Com
pres
sive
Str
ess
(GP
a)
Vb / P1/2 (V/mTorr1/2)
20
100
Biaxial Elastic Modulus
0 100 200 300 400 500 6000
50
100
150
200
Bia
xial
Ela
stic
Mod
ulus
(G
Pa)
Thickness (nm)
0 50 100 150 200 250
0.5
1.0
1.5
2.0
2.5
3.0
Res
idua
l Com
pres
sive
Str
ess
(GP
a)
Vb / P1/2 (V/mTorr1/2)
20
166
100
Biaxial Elastic Modulus
0 50 100 150 200 250
0.5
1.0
1.5
2.0
2.5
3.0
Res
idua
l Com
pres
sive
Str
ess
(GP
a)
Vb / P1/2 (V/mTorr1/2)
0 100 200 300 400 500 6000
50
100
150
200
Bia
xial
Ela
stic
Mod
ulus
(G
Pa)
Thickness (nm)
20
233
166
100
G-peak Position of Raman Spectra
0 300 600 900 12001520
1530
1540
1550
1560
G-p
eak
Pos
ition
(cm
-1)
Thickness (nm)
20
233
166
100
0 100 200 300 400 500 6000
50
100
150
200
Bia
xial
Ela
stic
Mod
ulus
(G
Pa)
Thickness (nm)
20
233
166
100
0 300 600 900 12001520
1530
1540
1550
1560
G-p
eak
Pos
ition
(cm
-1)
Thickness (nm)
233
166
100
20
Schematic Film Structure
Si Substrate
Si Substrate
Si Substrate
0 100 200 300 400 500 6000
50
100
150
200
Bia
xial
Ela
stic
Mod
ulus
(G
Pa)
Thickness (nm)
Synthesis of ta-C Films
• ta-C films on Si (100) Wafer
• Vb : from 0 to –500V
0 100 200 300 400 500 6000
1
2
3
4
5
6
7
Res
idua
l Com
pres
sive
Str
ess
(GP
a)
Negative Bias Voltage (V)
Elastic Modulus of ta-C film
0 100 200 300 400 500100
200
300
400
500
600
700
800
900
35 V 300 V
Bia
xia
l Ela
stic
Mo
du
lus
(GP
a)
Thickness (nm)
0 100 200 300 400 500 6000
1
2
3
4
5
6
7
Res
idua
l Com
pres
sive
Str
ess
(GP
a)
Negative Bias Voltage (V)0 100 200 300 400 500
100
200
300
400
500
600
700
800
900 GND 35 V 300 V
Bia
xia
l Ela
stic
Mo
du
lus
(GP
a)
Thickness (nm)
Elastic Modulus of ta-C film
Raman Spectra
1000 1500 2000 2500
Inte
nsi
ty (
A.U
.)
Raman Shift (cm -1)
16 nm 86 nm 91 nm 132 nm 238 nm 302 nm
Summary
• Presently suggested method for the elastic modulus measurement enabled us to compare the mechanical properites and thus the atomic bond structures of very thin amorphous carbon films.
• ta-C films showed insignificant structural evolution during the initial period of deposition.
• a-C:H showed the significant structural evolution in both polymeric and graphitic film deposition condition.
• a-C:H film deposited in optimum ion energy condition didn’t show the structural evolution.