Company Profile MCV Technologies, Inc. was founded in 1995 with extensive experience in thick film, microwave dielectric, LTCC and DC power regulation technologies. Focused on the mission to design and manufacture custom products, we quickly become a volume supplier of thick film hybrid circuits to the commercial wireless communications industries. At MCV Technologies, we continually strive to broaden our product line, as evidenced by our development of monolithic block ceramic filters, metal cavity filters and multiband combiner subsystems. Particularly notable, the recent year has been marked by the design and manufacture of a 7-channel AMPS / GSM / DCS multiband combiner system for the TMRT project. The introduction of 5.8 GHz ceramic filter, cerami c chip antenna for BLUETOOTH, GaAs FET Bias and Protection DC power board and splitter this year further strengthens product lines offered by MCV. Facility Currently, we utilize a 45,000 sq. ft. facility in Taipei, Taiwan to provide our customers with technically advanced, high quality products at competitive prices. Our facility has been ISO9001, ISO9002, and ISO14001 certified. Our design center located in San Diego, CA has design and application engineering talents to serve the needs of our valued customers. Manufacturing MCV manufacturing capability includes clean room thick film processing laser trimming, surface mount, wire bond, hermetic seal, packaging, automated plating, thick and fine line copper, LTCC, ceramic patch antenna, resonator and filter production. Quality MCV quality control practices are strictly enforced throughout various phases of production, including vendor qualification, incoming inspection, statistical process control, out-going inspection and quality assurance. All measuring and testing instruments are calibrated periodically by in-house calibration center using NIST standards. Service Our strength lies in materials, processing and RF design. We listen to our customer's needs, no matter large or small.
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Company Profile MCV Technologies, Inc. was founded in 1995 with extensive experience in thick film, microwave dielectric, LTCC and DC power regulation technologies. Focused on the mission to design and manufacture custom products, we quickly become a volume supplier of thick film hybrid circuits to the commercial wireless communications industries. At MCV Technologies, we continually strive to broaden our product line, as evidenced by our development of monolithic block ceramic filters, metal cavity filters and multiband combiner subsystems. Particularly notable, the recent year has been marked by the design and manufacture of a 7-channel AMPS / GSM / DCS multiband combiner system for the TMRT project. The introduction of 5.8 GHz ceramic filter, ceramic chip antenna for BLUETOOTH, GaAs FET Bias and Protection DC power board and splitter this year further strengthens product lines offered by MCV.
Facility Currently, we utilize a 45,000 sq. ft. facility in Taipei, Taiwan to provide our customers with technically advanced, high quality products at competitive prices. Our facility has been ISO9001, ISO9002, and ISO14001 certified. Our design center located in San Diego, CA has design and application engineering talents to serve the needs of our valued customers. Manufacturing MCV manufacturing capability includes clean room thick film processing laser trimming, surface mount, wire bond, hermetic seal, packaging, automated plating, thick and fine line copper,LTCC, ceramic patch antenna, resonator and filter production.
Quality MCV quality control practices are strictly enforced throughout various phases of production, including vendor qualification, incoming inspection, statistical process control, out-goinginspection and quality assurance. All measuring and testing instruments are calibrated periodically by in-house calibration center using NIST standards.
Service
Our strength lies in materials, processing and RF design. We listen to our customer's needs, no matter large or small.
PRODUCT INDEX
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com
MICROELECTRONICS / PACKAGING
Thick Film Hybrid ………………………………………………………...……….….. 101
Thick Film ………..…………...……….…………………..……………………. 102 Fine Line / Thick Copper Substrate ………………………...……………….. 103 Copper Plated Silver Substrate …………………………...…………………. 104
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 7
MCV Technologies, Inc., a volume supplier of thick film hybrid circuits for high frequency communication industry has a 25,000 square feet manufacturing facility. This hybrid operation is ISO 9001 certified by Bureau Veritas for more than ten years. MCV offers thick film hybrid technology, fine line/thick copper substrate, copper plated silver substrate, module and packaging technologies. PRODUCTS
• Metallized Substrates • Custom Resistor Networks • Custom IC Packages • Application Specific Modules
- Industrial - Automotive - RFPA - Wideband - Military
CAPABILITY
• Multi-conductive layer, thru-hole, wrap around • Fine line printing • High precision passive / active / functional trimming • SMT • Wire bonding • SIP / DIP / QFP packages • Selective coating / conformal coating / epoxy potting /
hermetic sealing • High power / surge protection • RF applications • Automated plating (copper, nickel, tin, tin/lead, tri-
metal, silver, gold, palladium, etc.) PRODUCTION FACILITY
MCV thick film hybrid capability includes CAD software, SUN workstation, clean room environment, ESD protection, advanced manufacturing equipments and processes, such as precision screen printers, fast fire furnaces, laser trimmers, pick and place machines and computer controlled test systems. Automated plating lines are offered for surface mount and package application. QUALITY POLICY
MCV quality control practices are strictly enforced throughout various phases of production, including vendor qualification, incoming inspection, statistical process control, out-going inspection, quality assurance, etc. All measuring and testing instruments are calibrated periodically by in-house calibration center using NIST standards.
CONTACT US
MCV provide one of the best hybrid services by focusing on price, quality and delivery. Contact the sales office for a free assessment of your new or existing project. Send detailed circuit, component specifications, mechanical and environmental requirements and any special considerations to Sales Manager. Tel: (858) 755-6080 Fax: (858) 755-6037 or Email: [email protected]
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 FAX: (858) 755
The following are MCV Technologies Thick Film Hybrid design guidelines. Please consult MCV’s technical staff if you have specific requirements. 1. Conductors:
Fine Gold Ot(e.g. silveCharacteristic
Standard Minimum StandarConductor width 8 5 12 Conductor spacing 8 5 16 Spacing between different material conductors 12 7 16
Conductor to via spacing 12 8 16 Via to via spacing 16 10 20 Conductor isolation in power/ground plane 10 7 16
Conductor to snapped substrate edge 20 10 20
Conductor to snapped substrate edge 6 2 6
2. Vias: Characteristic Standard
Via size 15 Via fill 15 Conductor over via 16 x 16 Wirebond pad size 10 x 10 Via to wirebond pad spacing 10 Via stacking 3 max. Offset via spacing 6
3. Dielectrics: Characteristic Standard
Dielectric to snapped substrate edge 12 Dielectric to diced substrate edge 6 Multilayer conductor to dielectric edge 10 Via to dielectric edge 15 Dielectric stepback 5
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 103
The following are MCV Technologies design guidelines and capabilities for Fine Line / Thick Copper Substrate Technology. Please consult MCV’s technical staff if you have specific requirements. 1. Substrate:
Material Array Size Surface Finishes Standard: 96% Alumina (Other ceramic material also available upon request)
1. 2” x 2” x 0.010” 2. 4.5” x 4.5” x 0.015” 3. 7” x 5” x 0.025”
1. As-fired: 16-35 mils 2. Ground and lapped: 3-5 mils
2. Process Capability: 2.1 Copper Plating Thickness, Width, and Space:
Thickness, T Width (min.) Space (min.) Min. Max. 0.001”<T<0.002” T>0.002” 0.001”<T<0.002” T>0.002”
2.2 Vias Via Diameter, Vd Capture Pad Diameter Copper Pullback to Ceramic
Feature 0.008” min.
(For 0.015” ~ 0.025” ceramic) 0.010” > Vd min.
0.005” annular ring min. 0.005” min.
2.3 Perforations
• All copper areas should be larger than 0.25” x 0.25” for perforations. • Standard perforations are 0.010” diameter circles on 0.050” centerlines.
2.4 Surface Finishes Capabilities • Wirebondable Au with Ni diffusion barrier. • Immersion Au (3-5-mils) with Ni diffusion barrier. • Entek OSP over bare copper to provide solderability. • Immersion Ag (3-5 mils) to provide solderability.
2.5 Solder Mask • Liquid Photo Imageable (LPI).
1. Line width / space: 0.006” min. 2. Feature registration: ± 0.005”.
• Dry Film patches available.
2.6 Edge Castellations • Maximum copper thickness: 0.0015”. • Ceramic thickness: 0.015” ~ 0.025”. • Ni/Au finish available upon request. • Optimum castellation design available upon request.
2.7 Feature Registration Tolerances: • Copper to substrate features: ±0.003”. • Copper pullback from substrate features:
1. Copper to scribe: 0.005” min. (0.010” standard). 2. Copper to edge of unplated hole:
! Hole diameter < 0.100”: 0.010” min. pullback. ! 0.100” < Hole diameter < 0.250”: 0.020” min. pullback
3. Saw cutting available upon request.
COPPER PLATED SILVER SUBSTRATE
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 104
The following are MCV Technologies design guidelines and capabilities for Copper plated Silver Substrate Technology. Please consult MCV’s technical staff if you have specific requirements. 1. Substrate:
Material Array Sizes (without plated through holes)
Array Sizes (with plated through holes)
Standard: 96% Alumina (Other ceramic material also available upon request)
1. 4.5” x 4.5” x 0.015” – 0.250” 2. 6.0” x 4.0” x 0.025” – 0.250” 3. 6.0” x 5.0” x 0.025” – 0.250”
1. 4.5” x 4.5” x 0.015” – 0.035” 2. 6.0” x 4.0” x 0.025” – 0.035” 3. 6.0” x 5.0” x 0.025” – 0.035”
___________________________________________ * Other than rectangular array available upon request.
2. Process Capability: 2.1 Metallization:
Conductor Thickness Through Hole Plating Thick Film
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 105-1
MCV Packaging Technology offers three multichip module (MCM) categories:
• MCM-C – Ceramic base substrate using thick film technology.
• MCM-L – Utilize printed-circuit board (PCB) technology of reinforced plastic laminates with copper (Cu) trace.
• MCM-D – Use deposited metal and reinforced dielectrics on a variety of rigid bases.
The following are MCV’s design guidelines and capabilities. Please consult MCV’s technical staff if you have specific requirements. 1. Thick Film Technology
Printing Laser Trimming LTCC Substrate 1. Line width / spacing: 5 mils 2. Line width / spacing: 2 mils
(Fodel Technology) 3. Conductor layer: 3
(each side of substrate) 4. Plug through hole: 8-16 mils
(related to substrate thickness) 5. Through hole printing: 4-30 mils
1. Passive trimming: • Tolerance: 0.1% • Ratio match: 0.05%
2. Active trimming: Voltage / Frequency / Current adjustment
1. Line width / spacing: 4 mils 2. Via diameter: 4 mils min. 3. Shrinkage: 0.2% 4. Embedded inductor and
capacitor
2. PCB Technology with Copper Trace 1. Line width / spacing 3 mils 2. Via Diameter 8 mils typical
4 mils (using HDI process) 3. Conductor layer 8 (with blind via or buried via) 4. Copper trace tolerance ±15% 5. Plug through hole 8 ~ 16 mils
3. Surface Mount Technology
Material Capability 1. Board: FR4, FR5, Getek, LTCC, Alumina,
Die Bonding Wire Bonding 1. 6” ~ 8” wafer ring and multichip dice
assembly 2. Tray packing is available 3. Wafer mapping 4. Die size: 0.254 mm x 0.254 mm min. 5. Die thickness: 0.1 mm min. 6. Bond line thickness control 7. Die location control 8. Accuracy: ±50 µm
1. Bonding area: 115 mm x 95 mm max. 2. Wire diameter: 23-38 µm 3. Loop height control 4. Wire length control 5. Bond pitch: 100 µm min. 6. Bond pad opening: 90 µm x 90 µm min.
MODULE / PACKAGING
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 105-2
5. Flip Chip / Underfill Capability
Flip Chip Underfill 1. Wafer / Tape and Reel / Gel pack / Tray
packing is available 2. Die size: 0.5 mm x 0.5 mm ~
25.4 mm x 25.4 mm 3. Die thickness: 0.254 mm min.
with wafer packing 4. Bump height: 0.254 mm max. 5. Accuracy: ±15 µm
1. Weight control feedback 2. Temperature control: ±3°C during operation
6. Outline Package Capability
1. Metal Lid 2. Ceramic Lid 3. Control coating 4. Transfer molding 5. DIP / SIP / Leadless (special requirement available upon request)
7. HDI Technology Advantage v.s. Conventional Process
Features Conventional 4 Layer Board HDI 4 Layer Board Layer Counts 4 1+2+1 Line Width 5 mils 3 mils Line Space 5 mils 3 mils Via Hole Diameter 14 mils 6 mils Via Pad 24 mils 12 mils Line to Line Space 14.5 mils 7.5 mils Line Pitch 19.5 mils 10.5 mils Routing Density, f (tracks/inch)
51 95
c
d
b
a
b
e
a: line width b: line to pad spacing c: via pad = 12 mil d: resulting spacing line to line (open space routing) e: line pitch = 10.5 mil f: possible routing density (tracks per inch) d = b + c/2 - a/2; e = a/2 + b + c/2; f = 1000/e
MODULE / PACKAGING
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 105-3
Example: RFPA Module Process The following are MCV Technologies RFPA module process flow and capability. Please consult MCV’s technical staff if you have specific requirements.
1. Process Flow: 2. Capability
Process Characteristic Criteria Capability Solder paste thickness 0.12 ± 0.01 mm Cpk > 1.5 Die shear test 1000 g min. Cpk > 1.5 Bond line thickness 8 ~ 20 µm Cpk > 1.33 Die location ±50 µm Cpk > 1.33 Ball shear test 30 g min. (for 1 mil Au wire) Cpk > 1.5 Wire pull test 3 g min. (for 1 mil Au wire) Cpk > 1.5 Loop height 125 ± 25 µm Cpk > 1.33 Wire sweep <10% Cpk > 1.5 Package warpage <4 mils Cpk > 1.5 Package void – surface <10 mils Package void – die area Not allowed Package void – others <20 mils Mark permanency Not allowed Air bubble <20 mils Dimension check < ±0.1%
3. Reliability Test Capability
Test Standard Specification
Precondition Test JEDEC A113
1. Prior SAT inspection 2. Temperature cycling: -40°C ~ +60°C for 5 cycles 3. High temperature baking at 125 ± 5°C, 24 hours 4. Soaking: Level III - 30°C ± 60% RH, 192 hours (standard condition) 5. Convention reflow 3 cycles:
• Average ramp-up rate (183°C to peak): 3°C/sec max. • Preheat temperature 125(+25)°C: 120 sec max. • Temperature maintained above 183°C: 60 ~150 sec • Time within 5°C actual peak temperature: 10 ~ 20 sec max. • Peak temperature rage: 225+5/-0°C • Ramp down rate: 6°C/sec max.
6. Post SAT inspection Thermal Shock
(Liquid to liquid) JEDEC22-A106
Condition C -55°C ~ 125°C 30 cycles
Temperature Cycling (Air to air)
JEDEC22-A104 Condition B -55°C ~ 125°C 100 cycles
Solderability JEDEC22-B102 Steam aging 8 hours
SMT Die Mount
Wire Bonding Overmolding Post Mold Cure
Marking Substrate Mount Saw & Singulation
Die Mount Cure
LOW TEMPERATURE COFIRED CERAMIC (LTCC)
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 106
MCV Technologies Low Temperature Cofired Ceramic (LTCC) provides ceramic multilayer substrates for low cost solution in wide range applications including communication, base station, handset, satellite, packaging and military. FEATURES
• LTCC tape materials from dielectric constant 5.0 to 7.8. • Array size from 80 mm to 150 mm square. • Standard number of layers from 2 to 20. • Various conductors are available, such as silver (Ag), gold (Au), and palladium silver (Pd/Ag). • Line width and spacing as small as 100 µm (standard is 250 µm). • Via structure can be buried, stacked, and staggered. • Via size as small as 130 µm (standard is 200 µm). Via pitch is 3x via size. • Buried capacitors, inductors, and resistors are available. • Space saving - cavities for embedding active components on the surface. • Low firing temperature (< 1000°C).
DESIGN RULE
The following are LTCC basic design guidelines. For detailed information, please contact our technical staff. 1. Conductors:
Characteristic Standard Minimum Conductor width (A) 250 100 Conductor thickness 10 5 Conductor spacing (B) 250 100 Conductor to edge (C) 500 250 Solid plane to edge (D) 500 250 Pad to edge (E) 80
Unit: µm 2. Vias:
Characteristic Standard Minimum Shape Circular Via hole diameter (F) 200 100 Via hole cover dot diameter (G) 500 (Via size + 100~150) Clearance to via cover pad (J) 250 100 Via center to edge (H) 500 200 Conductor to via center 650 300 Via to via center spacing (I) 750 (3x via size) Stagger length (center to center) 400 (2x via size)
Unit: µm
D
CAVITY
A B
C
D
E
F G
H
I
J E
MICROWAVE COMPONENTS
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 200-1
• Size available from 2 mm to 12 mm • High dielectric constant • Low temperature coefficient • High quality factor (Q) • Wide range of resonant frequency (from 300 -
• Small size and low profile • Wide frequency range • Omni-directional
• 2.44 GHz Bluetooth
Patch Antennas
MA-SSA MA-SSB
Ante
nnas
• Small size and light weight • High quality factor (Q) dielectric • Wide bandwidth and low loss • Low and tight temperature coefficient • Central feeding point terminal • Available in different sizes
• 1.58 GHz GPS • 2.4 GHz WLAN
Bandpass Duplexers Multiplexers Notch
CBP CDPX CMPX CNF
Cav
ity F
ilter
s
• Temperature compensated • Low insertion loss • Available on bandpass, duplexer, multiplexer,
and notch filters
• AMPS / CDMA • Cellular phone • GSM • IMT-2000 • PCS • Trunked Radio System (TRS) • WLL
Splitters MS
Split
ters
• 100% soldering of the cover provides the highest RF integrity (RFI) shielding
• Corrosion resistant finish • Easy access of cable connections • High quality zinc diecast case • Anticorrosive chromate finish • Mounting tabs and grounding block
• MATV • CATV • Cable Modem
DC
Pow
er
Boa
rd GaAs FET
Bias and Protection
GFP
• Provide gate and drain voltages in the correct sequence and levels to insure proper power management
• Proper power supply sequencing occurs when primary DC power is applied
• Compact and economical design reduces power dissipation
• GaAs FET biasing and protection
________________________________________________ * Please contact us for detail information, or visit our website
MONOLITHIC BLOCK BANDPASS FILTERS
11696 Sorrento Valley R
APPLICATIONS
• AMPS/CDMA • GPS • ISM 2.4 GHz • ISM 5.8 GHz
DIMENSIONS TYPICAL PERFORMANCE
ORDERING INFO
••• •
C
A
B
EDX
PART NO . L
W T
CH1 S21 LOG 10 dB/ REF 0 dB
C
PRm
CH2 S11 SWR 1 / REF 1
PRm
MARKER 1 1.663 GHz
10 Oct 2000 13:58:50
1
2 3
4 5
1 : -1 . 7237 dB
CH1 Markers
2 : -1 . 9362 dB1. 64100 GHz
3 : -1 . 8346 dB
1. 68500 GHz
4 : -62 . 663 dB1. 51500 GHz
5 : -61 . 945 dB1. 81000 GHz
4 5
1 : 1. 1806 1 663 . 000 000 MHz
CH2 Markers
2: 1. 14221. 64100 GHz
3: 1. 14711. 68500 GHz
Tolerance Unless Otherwise Specified: ±0.3 Unit: mm
oad, Suite J, San Diego, CA 92121 Tel: (858) 755-60
RMATION
MBP 3 2R 1575 S [1] [2] [3] [4] [5]
[1] Monoblock Bandpass Filte[2] Resonator Size:
• 1.5 = 1.3 mm • 2 = 1.9 mm • 3 = 2.8 mm • 4 = 3.8 mm • 4.5 = 4.3 mm
[3] Number of Resonator [4] Center Frequency [5] Type – S: SMD
P: Pin [6] Bandwidth [7] Version
CENTER
C
GSM MMDS PCS/DCS WLL
80 Fax: (858) 755-6037 www.mcvtech.com 201-1
10 A [6] [7]
r
1 663 . 000 000 MHz SPAN 299 . 000 000 MHz
1
2 3
4: 31 . 8551. 51500 GHz
5: 39 . 563
1. 81000 GHz
MONOLITHIC BLOCK BANDPASS FILTERS
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 201-2
_______________________________________ * Other specification available upon request ORDERING INFORMATION
TBP 6 3R 836 P 02 A [1] [2] [3] [4] [5] [6] [7]
[1] Thru-Hole Bandpass Filter [2] Resonator Size – 6 = 6 mm [3] Number of Resonator [4] Center Frequency [5] Type – S: SMD [6] Bandwidth [7] Version P: Pin
BANDPASS FILTERS: LTCC TYPE FOR ISM 2.4 GHz APPLICATION
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 204
[2] Material Dielectric [3] Dimension Type dance [5] Resonant Wave Length [6] Resonant Frequency material and size for resonator without tab)
TEM MODE RESONATORS
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 401-2
SPECIFICATIONS
Material Dielectric Constant
Temperature Coefficient (ppm/°C)
Dimension Type
Characteristic Impedance
(ohm) Resonant
Wave Length Frequency
Range (MHz)
Q value min.
15.5 D120 17.0
1000
D100 15.5 900 D 80 15.0 800
12.5 700 14.0 ~ D 60 15.5 5000
600
10.0 14.0 D 40 16.5
450
D 30 16.0 350
MR21 21 ± 1 0 ± 10
D 20 16.5
λ/4 or λ/2
250 11.5 D120 12.5 900
D100 11.5 800 D 80 11.5 700
9.5 600 10.5 ~ D 60 11.5 3500
550
7.5 10.5 D 40 12.5
420
D 30 12.0 320
MR37 37 ± 1 0 ± 10
D 20 12.5
λ/4 or λ/2
220 7.5 D120 8.0 800
D100 7.5 700 D 80 7.0 600
6.0 300 7.0 ~ D 60 7.5 2000
450
5.0 6.5 D 40 8.0
320
D 30 7.5 270
MR90 90 ± 2 0 ± 10
D 20 8.0
λ/4 or λ/2
180 _______________________________________ * Other specification available upon request
TE MODE DIELECTRIC RESONATORS
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080
MCV Technologies dielectric resonators (DRs) provide wide range of dielectric constant, high quality factor (Q), and low cost solutions for the applications in dielectric resonator oscillators, microwave filters, combiners, base station for AMPS/GSM/PCS, and satellite communication. FEATURES
• High dielectric constant • High quality factor (Q) • High frequency stability • Low temperature coefficient of resonance
frequency • Ta free materials • Tight tolerance in dielectric constant
10.6 5.00 _______________• d: custom spe• Other specific
ION
38 03 N 108 401] [2] [3] [4] [5
ient of Resonant Frequency st
ature Coefficient -1 mm): e.g. 108 = 10.8 mm
-1 mm): e.g. 40 = 4.0 mm; 00 for disc type .g. 50 = 5.0 mm
D
L
(858) 755-6037
m) Heigh
___________cs. ation available
50 ] [6]
L
d
www.mcvtech.com 402-2
t, L ±±±± 0.05 (mm) 12.50 ~ 13.50 11.50 ~ 12.50
4.20 2.65 1.96 28.45 15.35 14.10 10.10 9.70
6.20 ~ 7.90 3.75 ~ 4.48 2.55 ~ 3.74 2.35 ~ 2.60
2.25 24.42 ~ 28.25
13.45 1.80
_________________
upon request
TEST METHOD OF ELECTRICAL PROPERTIES
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel:
1. DIELECTRIC CONSTANT (εεεεr)
The dielectric constant of the material determines the resonator dimension. The typical measurement method uses Hakki–Coleman test fixture as shown in Figure 1.
Figure 1. Hakki-Coleman Test Fixture
2. Q FACTOR Figure 2 shows a typical test cavity setup focoefficient of resonant frequency. The cavity dimensionmetallic loss can be neglected. Low loss support, sucthe DR specimen in the middle of the cavity away from uses two RF probes connected to a network analyzerDR. By measuring 3 dB bandwidth (BW), insertion losscan be determined from the equation:
Qu = (f0 / BW) / (
The resonance is measured in the TE01δ mode and the t 3. TEMPERATURE COEFFICIENT OF RESONANT For τf measurement, the test cavity in Figure 2 i(f0) is measured from 25°C to 70°C. The τf is determine
τf = (∆f / f25°C) / ∆T Figure 3 shows the detailed cavity setup using mto test DR for the applications of DR oscillators and mic
Figure 3. DR cavity setup using microstrip line method
Exam
F
S
Figure 2. DR cavity setup for Q factor and temperature coefficient of resonant frequency measurement
r the measurement of Q factor and temperature should be at least three times the DR size, so the h as steatite, quartz or alumina disks, suspended the influence of the metal walls. MCV’s laboratory to couple the microwave energy to and from the (IL), and center frequency (f0), unloaded Q factor
1 –10(-IL/20))
est is performed at ambient conditions.
FREQUENCY (ττττf)
s placed in a heating chamber and the frequency d from the equation:
ppm/°C
icrostrip line method. MCV uses this test fixture rostrip filters.
ple:
requency C-band Ku-band D0 60 mm 40 mm L0 20 mm 10 mm H 0.787 mm 0.508 mm
ubstrate FR4 Teflon W 50 Ω line 50 Ω line
HIGH K SUBSTRATES
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (8
MCV Technologies high K substrates combine good electrical performance with excellent physical characteristics at a reasonable cost, with industry standard loss tangents (tan δ) of ≤0.0005 and very stable temperature coefficient of K (TCK). FEATURES
• High dielectric constant • High quality factor (Q) • Miniaturize the size of MIC • Fine surface finish • Metalized finish available
Temperature Coefficient of K +10 ± 6 ppm 0 ± 4 ppm 0 ± 6
tan δ, max. 0.0002 0.0005 Electrode Loss (Ω/ ) 0.05
______________* Other specific
ORDERING INFORMATION
MDS 20 CC 020 X W [1] [2] [3] [4] [5] [6] [
[1] MCV Dielectric Substrate [2] Size: inches x 10 [3] Material Code
[4] Thickness (inches x 104) [5] Surface Finish:
! X = as fired ! M = machined ! P = machined and polish
[6] Metalization: ! W = wet gold over nickel ! X = none ! Y = sputtered gold over adh! Z = custom
[7] Patterning and Dicing: ! P = per customer drawing ! Blank = none
58) 755-6037 www.mcvtech.com 403
G NL 0 70
ppm -6 ± 6 ppm
______________________ ation available upon request
P 7]
esion layer
CHIP ANTENNA: FOR BLUETOOTH APPLICATION
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037
MCV multilayer chip antenna is designed for automatic mounting and adjustment-free assembly of wireless equipment, including 2.44 GHz Bluetooth and Bluetooth like application. FEATURES
• Small size and low profile • Wide frequency range • Omnidirectional, radiational pattern
SPECIFICATIONS
Part No. MA-B2442-LW96A MA-B2442-LDimension 9.8 x 6.7 x 1.0 mm 6.0 x 4.0 x 1.Center Frequency (fc) 2442 MHz 2442 MHz Operation Frequency 2400 ~ 2484 MHz 2400 ~ 2484Bandwidth in S11≤≤≤≤-10dB 200 MHz min. 200 MHz minReturn Loss at fc 20 dB min. 16 dB min. Peak Gain 1 dBd -2.5 dBd Average Gain -2.8 dBd -7 dBd
_______________________________________ * Other specification available upon request PERFORMANCE
ORDERING INFORMATION MA BC 2442 LW46 A [1] [2] [3] [4] [5] [1] MCV Antenna [2] Bluetooth Chip [3] Center Frequency [4] Dimension: Length and Wid [5] Version
DIMENSIONS
www.mcvtech.com 501-1
W64B 0 mm
MHz .
th (mm)
(unit: mm)
CHIP ANTENNA: FOR BLUETOOTH APPLICATION
11696 Sorrento Valley Road, Suite J
TEST BOARD RECOMMENDED LAND
50Ω Lne
25
Antenna
20
35
co r
Suun
Antenna
Suun
RADIATION PATTERN
-40
-30
-20
-10
00
30
60
90
120
150180
210
240
270
300
330
-40
-30
-20
-10
0
[dB
]
[dB
]
[deg.] Chip Antenna
Ref. Dipole
-40
-30
-20
-10
00
30
60
90270
300
330
-40B]
[dB
]
[deg.] Chip Antenna
Ref. Dipole
0¡Æ90¡Æ
180¡Æ270¡Æ
0¡Æ90¡Æ
180¡Æ270¡Æ
H-Plane: Longitude
0 ¡ Æ
90 ¡ Æ
180 ¡ Æ
0 ¡ Æ
90 ¡ Æ
180 ¡ Æ
SMA nnecto
bstrate : FR4 it : mm
i
120
150180
210
240
-30
-20
-10
0
[d
-30
-20
-10
00
30
60300
330
B]
[dB
][deg.] Chip Antenna
Ref. Dipole
270 ¡ Æ270 ¡ Æ
E-Plane: Longitude
180 ¡Æ
90 ¡Æ
180 ¡Æ
90 ¡Æ
Fixing
, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 501-2
Feeding
bstrate : FR4 t : mm
-40 90
120
150180
210
240
270-40
-30
-20
-10
0
[d
-40
-30
-20
-10
00
30
60
90
120
150180
210
240
270
300
330
-40
-30
-20
-10
0
[dB
]
[dB
]
[deg.] Chip Antenna
Ref. Dipole
270 ¡Æ
0¡Æ
270 ¡Æ
0¡Æ
H-Plane: Horizon
90 ¡Æ
180 ¡Æ
0 ¡Æ
270 ¡Æ
90 ¡Æ
180 ¡Æ
0 ¡Æ
270 ¡Æ
E-Plane; Horizon
SSA SERIES PATCH ANTENNAS: FOR GPS APPLICATION
MCV SSA Series miniature antenna element is designed for Global Positioning Systems (GPS). This patch antenna has excellent stability and sensitivity through the use of high performance proprietary ceramic material well suited for GPS frequencies.
¡¾0.2
¡¾0.2
13
1.2
1.2 3.5
0.7
FEATURES • Antenna dimension is as small as teflon
antenna • Provide highly stabilized performance • Using high quality factor dielectric • Low and tight temperature coefficient • Different sizes are available: 13, 18, 20, 25,
36, and 60 mm.
¡¾0.2
[BOTTOM] [SIDE] [TOP]
Tolerance UnlessOtherwise Specified : ¡¾0.1
0.8
1 m ax.313
ELEMENT CONSTRUCTION • Type: Flat patch antenna • Design: Rectangular microstrip antenna• Feeding Method: Off-set one point
feeding through ground plane
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel:
14 2.5 35 x 35 14 2.5 35 x 35 15 80 X 80 15 80 X 80 14 2.5 35 x 35 15 4.5 70 x 70 15 0.0 30 X 30 15 3.0 50 X 50 15 3.5 50 X 50 15 5.0 70 X 70
Unit : m m
SSA SERIES PATCH ANTENNAS: FOR GPS APPLICATION
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 502-2
DIRECTIVITY CHART
THETA = 0 THETA = 90
ANTENNA GAIN vs. GROUND PLANE SIZE
0
5
10
40 50 60 70 80 90
SIZE OF SQUARE GROUND PLANE (mm)
GAI
N (d
Bi)
FREQUENCY SHIFT OF DIELECTRIC ANTENNA BY GROUND PLANE SIZE
1.57
1.58
1.59
40 50 60 70 80 90 100
SIZE OF SQUARE GROUND PLANE (mm)
CEN
TER
FR
EQ.
(GHz)
AXIAL RATIO
0510
1.57 1.575 1.58 1.585 1.59
with 70mm sq. GND FREQUENCY (GHz)
AXIA
L R
ATIO
(d
B)
ORDERING INFORMATION
MA ST 1580 L25 Y22 [1] [2] [3] [4] [5]
[1] MCV Antenna [3] Center Frequency [2] ST: Standard Pin [4] Dimension – Length (mm)
SP: Special Pin [5] Feeding Location
SSB SERIES PATCH ANTENNA: FOR WIRELESS LAN
S
O
MCV SSB Series is an ultra miniature dielectric patch antenna for 2.4 GHz Wireless LAN system. This antenna has vertical polarization characteristics, suitable for base station applications. MCV's ceramic dielectric material provides excellent stability and sensitivity. A new chip antenna will be available soon for PDA, module, and terminal applications.
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (85
PECIFICATIONS
Part No. Center Frequency Bandwidth Return Loss @ fc Impedance Peak Gain Average Gain
RDERING INFORMATION
MA ST 24 [1] [2] [
[1] MCV Antenna [2] Pin Type – ST: Standard
SP: Special Pin [3] Center Frequency [4] Dimension – Diameter (mm)
FEATURES • Small size and light weight • Wide bandwidth and low loss • Central feeding point terminal• Omni-directional in azimuth
600-1000 8.2 20 25 ____________________________________ * Other specification available upon request ORDERING INFORMATION MS 2 1GN H [1] [2] [3] [4] [1] MCV Splitter [2] 2 means 2-way 3 means 3-way 4 means 4-way
[3] Series type [4] H means horizontal input/output V means vertical input/output
5 MHz ~ 1 GHz SPLITTERS FOR CABLE AND MODEM
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 701-2
TYPICAL PERFORMANCE 2 WAY SPLITTER 3 WAY SPLITTER
5 MHz ~ 1 GHz SPLITTERS FOR CABLE AND MODEM
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 Fax: (858) 755-6037 www.mcvtech.com 701-3
4 WAY SPLITTER
GaAs FET BIAS & PROTECTION DC POWER BOARD
11696 Sorrento Valley Road, Suite J, San Diego, CA 92121 Tel: (858) 755-6080 FAax: (858) 755-6037 www.mcvtech.com 801
DESCRIPTION MCV DC Power Board provides both positive and negative supply voltages for Power GaAs FET biasing. From a single positive supply, we generate, regulate, and sequence the power on for your FET circuitry. FEATURES
1. The GFP100 provides gate and drain voltages in the correct sequence and levels to insure proper power management for your GaAs FET applications. • High current positive regulator for the drain power source • Negative gate voltage power source
2. Proper power supply sequencing occurs when primary DC power is applied. • The negative gate voltage ramps ON before the drain voltage is applied to the FET. • The gate and drain voltages are protected against abrupt power supply changes. • The ENABLE pin accepts a TTL input for switching the GaAs FET on and off as desired.
3. Compact and economical design reduces power dissipation of the GFP100 power management package by a FACTOR OF FIVE providing: • More power for your system • Reduced operating temperatures • Extended component life and reliability
SPECIFICATIONS FOR GFP100
Type Unit Value Input Voltage (Vin) V 10.5~16 Input Momentary Over Voltage V 30 Inverse Input Voltage V -16 Drain Output Voltage (Vo) V 10
GFP100 A 10 Max. Pos. Output Current GFP100A A 18 Max. Power Loss W 13 Neg. Output Voltage V -5 Max. Neg. Output Current mA 75 Max. Pos. Output Ripple MVP-P 25 Max. Neg. Output Ripple MVP-P 10 Max. Turn On Time µs 10 Max. Turn Off Time µs 5 Max. Operating Temperature °C -30~+70 Max. Storage Temperature °C -40~+85
_______________________________ * Please contact us for detailed information and alternative requirements suitable for your application