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Cobalt titanatecobalt oxide composite thinfilms deposited from
heterobimetallicprecursorMuhammad Ali Ehsana, Muhammad Adil
Mansoora, Muhammad Mazhara*,Asif Ali Tahirb, Mazhar Hamidc and K.
G. Upul Wijayanthab
A single molecular heterobimetallic complex,
[Co2Ti(m3-O)(TFA)6(THF)3] (1) [TFA= trifluoroacetate, THF=
tetrahydrofuran], wassynthesized, structurally and
spectroscopically characterized and implemented as a single-source
precursor for the prepara-tion of CoTiO3CoO composite thin films by
aerosol-assisted chemical vapour deposition (AACVD). The precursor
complexwas prepared by interaction of Co(OAc)2.4H2O [OAc=
(CH3COO
)] with Ti(iso-propoxide)4 in the presence of trifluoroacetic
acidin THF, and was analysed by melting point, CHN, FT-IR,
single-crystal X-ray diffraction and thermogravimetric analysis.
Theprecursor complex thermally decomposed at 480 C to give a
residual mass corresponding to a CoTiO3CoO composite
material.Good-quality crystalline CoTiO3CoO composite thin films
deposited at 500 C by AACVD and characterized through powderX-ray
diffraction and scanning electron microscopy/energy-dispersive
X-ray spectroscopy shows that the crystallites have
arose-flower-like morphology with an average petal size in the
range of 26mm. Copyright 2012 John Wiley & Sons, Ltd.
Keywords: cobalt titanatecobalt oxide; polynuclear bimetallic
complex; composite; thin films
Introduction
Q1 High-purity titanates are sought for dye-sensitized solar
cells[1,2]
as photocatalysts for water splitting to hydrogen and
oxygen,degradation of air pollutants,[3] for self-cleaning and
energy effi-cient windows,[4] gas sensors[5] and photoluminescent
materi-als.[6] Ferromagnetic cobalt titanium oxide systems[7,8]
have beeninvestigated as materials for dynamic random access
memory,[9]
as dilute magnetic semiconductors and dilute magnetic
dielec-trics[10] and for metal oxide semiconductor field-effect
transistors.Cobalt titanium-based oxides systems are also employed
ascatalysts, e.g. in hydrogenation processes, FisherTropsch
reac-tions[11] and the oxidative dehydrogenation of ethane.[12]
Cobalttitanate (CoTiO3) is used in the preparation of magnetic,
ferroelec-tric nano-composite materials and nano-particulate gas
sensors.Particularly, cobalt titanate plays an important role in
the produc-tion of semiconductor devices, since with this oxide it
is possibleto manufacture thin films with a very high
k-constant.[13,14] Thegrowing interest of researchers in CoTiO3
materials is also due toa series of its physiochemical properties
permitting its applicationas pigments, magnetic recording media[15]
and gas sensors foralcohol, as humidity sensors and as
catalysts.[16]
Cobalt titanium oxide powders have been prepared via differ-ent
synthetic routes, such as conventional solid-state reactionsbetween
fine powders,[17] solgel processes,[18] stearic acid
gelmethods,[19] aerogel approaches,[20] the Pechini process,[21]
co-precipitation of mixed metal oxalates[22] and micelle
solutionmethods.[23] These methods generally involve mechanical
mixingof oxides and/or carbonates followed by heating cycles,
calcina-tion and ball milling for extended periods. This often
yieldsinhomogeneous mixtures with only low control over the
stoichi-ometry, appearance of undesirable phases, abnormal
graingrowth and poor reproducibility. Fabrication of thin films
from
these powders is often a formidable task, usually requiring
hightemperatures and some kind of sophisticated equipment.
Whenusing low-melting materials as the substrate the high
processingtemperatures affect not only the quality of the thin
films, but thethermal stability of the substrate also becomes a
problem. Toovercome these challenges associated with the
fabrication ofceramic thin films we focused our work on the design
andsynthesis of soluble single-phase precursor materials that
arecapable of delivering all the components of the target
materialto a substrate in the required ratio, where they then can
bedecomposed under mild conditions to form the desired thinfilms.
Aerosol-assisted chemical vapour deposition (AACVD) is aversatile
technique ideally suited for this purpose. Its only requi-site is
for the precursor to be soluble in a suitable solvent,and the
resulting solution can then be used to fabricate multi-component
material layers while at the same time ensuring bothreproducibility
and stoichiometry in the deposited layer(s). More-over,
high-quality thin films can be obtained by AACVD as thehomogeneity
of the aerosol depends on the size of the aerosoldroplets, which
can be controlled through the frequency of theultrasonic generator.
In continuation of our previous work[24,25]
and taking advantage of carboxylate ligand which coordinates
* Correspondence to: Muhammad Mazhar, Department of Chemistry,
Faculty ofScience, University of Malaya, Lembah Pantai, 50603 Kuala
Lumpur, Malaysia.E-mail: [email protected]
a Department of Chemistry, Faculty of Science, University of
Malaya, LembahPantai, 50603 Kuala Lumpur, Malaysia
b Department of Chemistry, Loughborough University, Loughborough
LE11 3TU, UK
c Department of Chemistry, Quaid-I-Azam University, Islamabad
45320, Pakistan
Appl. Organometal. Chem. (2012) Copyright 2012 John Wiley &
Sons, Ltd.
Full Paper
Received: 19 April 2012 Revised: 7 May 2012 Accepted: 21 May
2012 Published online in Wiley Online Library
(wileyonlinelibrary.com) DOI 10.1002/aoc.2893
1Journal Code Article ID Dispatch: 16.06.12 CE:
A O C 2 8 9 3 No. of Pages: 6 ME:
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to metal atoms in a variable way with potential to gain
highnuclearity species, we investigated the design of soluble
cobalt ti-tanium bimetallic molecular complex
[Co2Ti(m3-O)(TFA)6(THF)3](1) (TFA= trifluoroacetate, THF =
tetrahydrofuran) and fabricatedof CoTiO3CoO composite thin films by
AACVD. The thin filmswere characterized by powder X-ray diffraction
(PXRD), scanningelectron microscopy (SEM) and energy-dispersive
X-ray spectros-copy (EDX) for crystallinity morphology and
composition.
Experimental
General Considerations
All manipulations were carried out under an inert atmosphere of
dryargon gas using Schlenk tube and glove box techniques.
Solventswere carefully dried and distilled over
sodiummetal/benzophenone.Cobalt(II) acetate tetrahydrate and
titanium(IV) iso-propoxide werepurchased from Aldrich. Melting
points were recorded on a Mita-mura Riken Kogyo (MT-D) apparatus
and are uncorrected. Elementalanalysis was performed using a CHN
analyser LECO model CHNS-932. FT-IR spectra were recorded with a
Bio-Rad Excalibur FT-IRmodel FTs 300MX spectrometer from KBr discs.
Controlled thermalanalysis was carried out using a PerkinElmer
thermogravimetricanalyser TGA-7 with computer interface. Thermal
measurementwas carried out in an alumina crucible under an
atmosphere offlowing nitrogen gas (25mlmin1) at a heating rate of
12 Cmin1.
Synthesis
Synthesis of [Co2Ti(m3-O)(TFA)6(THF)3] (1)
0.200g (0.803mmol) cobalt(II) acetate tetrahydrate was
suspendedin 10ml dry THF in a 50ml Schlenk tube fitted with an
inert gas/vacuum line adapter and magnetic stirrer. 0.238ml
titanium(IV)iso-propoxide (0.809mmol) was added drop by drop via
syringeto the suspension. The contents were stirred for 1 h to
obtain a cleardeep-blue solution. 0.2ml (2.00mmol) of
trifluoroacetic acid (TFAH)was added to the blue solution, which
turned deep red. The reac-tion mixture was evaporated to dryness
under vacuum and the
solid was redissolved in 5ml of dry THF. The red solution was
fil-tered through a cannula to remove any solid residue and
wasplaced in a freezer at 10 C to obtain red-coloured crystals
after2weeks with yield 82%. m.p. 115 C. Anal. Calcd for
C24H24Co2F18O16Ti: C, 26.76; H, 2.23. Found: C, 26.96; H, 2.47%. IR
(cm
1):1713 s, 1672 s, 1584m, 1468 s, 1426m, 1198 s, 1146 s,
1026m,897w, 793 s, 721 s, 618 s, 522 s, 461w. TGA: 129246C (28.58%
wtloss); 259363 C (46.16% wt loss); 363480 C (residue of
21.76%).
X-ray Crystallography
Data were collected on a Bruker AXS SMART APEX CCD
diffractom-eter at 100(2)K using Mo Ka radiation (0.71073) with the
scantechnique. The unit cell was determined using SMART[26]
andSAINT[27] and the data were corrected for absorption using
SADABSin SAINT. The structure was solved by direct methods and
refinedby full matrix least squares against F2 with all reflections
usingSHELXTL.[28] All non-hydrogen atoms were refined
anisotropically.The molecule is situated on a crystallographic
mirror plane cuttingthrough the Ti atom, the central oxo atom, one
of the THFmolecules and two of the TFA molecules. One of these TFA
anionsshows rotational disorder of the CF3 group with an occupancy
ratioof 0.672(19) to 0.328(19). The THF molecule on the mirror
plane isdisordered over two symmetry-equivalent positions. Crystal
dataand refinement parameters are given in Table T11.
Deposition of Thin Films by AACVD
Thin films were deposited by AACVD on commercially availablesoda
glass slides from precursor (1) using a self-designed
ultrasonicaerosol assisted chemical vapour deposition (AACVD)
assembly asdescribed elsewhere.[29] Substrate was ultrasonically
cleaned withdistilled water, acetone, isopropanol and ethanol and
placed insidethe reactor tube. It was then heated to 500 C for
20min beforecarrying out the deposition. In a typical deposition, a
0.1 M solutionof precursor (1) was used to generate the aerosol at
room temper-ature using a PIFCO air humidifier. Air was passed
through theaerosol mist at a flow rate of 150mlmin1, thus forcing
the aerosoldroplets into the reactor chamber. Depositions were
conducted for
Table 1. Crystal data and structure refinement for precursor
1
Empirical formula C24H24Co2F18O16Ti range for data collection
1.65 to 28.28
Formula weight 1076.19 Reflections collected 15 004
Solvent THF Independent reflections 4795
Crystal habit, colour Rod, red Absorption correction
Multi-scan
Temperature 100(2) K Max. and min. transmission 0.6182 and
0.7462
Crystal system Monoclinic Data/restraints/ parameters 5 538 / 0
/ 314
Space group P21/m Goodness-of-fit on F2 1.054
Unit cell dimensions a=8.6429(6) , Final R indices [I> 2s
(I)] R1= 0.0341,b=17.7715(13) wR2= 0.0826
c=12.5427(9)
b = 99.4220(10)
Volume 1900.5(2) 3 R indices (all data) R1= 0.0432,
wR2= 0.0882
Z 2 Largest diff. peak and hole 1.01 and 0.43 e 3Density
(calculated) 1.881mgm3 Crystal size (mm) 0.55 0.20 0.20Absorption
coefficient 1.223mm1 range for data collection 1.7 to 28.3
F(000) 1068 Index ranges 11 h 1121 k 2316 l 16
M. A. Ehsan et. al.
wileyonlinelibrary.com/journal/aoc Copyright 2012 John Wiley
& Sons, Ltd. Appl. Organometal. Chem. (2012)
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45min. The exhaust from the reactor was vented directly into
theextraction system of a fume cupboard. Towards the end of
theexperiment the aerosol line was closed, and air was allowed to
flowover the substrate to cool the films to about 40 C before they
wereremoved from the reaction chamber for structural studies.
The surface morphology of deposited thin film was analysedusing
a high-resolution scanning electron microscope (NNL 200)and
composition was investigated with an energy-dispersiveX-ray
spectrometer (EDX, GENESIS). The identity of the phasesand the
degree of crystallinity of the deposited films weredetermined using
a PAN analytical X-ray diffractometer modelXPert HighScore with
primary monochromatic high-intensityCu-Ka (l=1.54184 ) radiation in
the 2 range 5.0090.00 withstep size 0.026 operated at 40 kV and
40mA.
Results and Discussion
Synthesis and Characterization
The synthesis of oligomeric homo- or hetero-bi-trimetalic
molecu-lar complexes is usually carried out by solution mixing of
readilyavailable reactants such asmetal carboxylates,
b-diketonates, metalalkoxides and aminoalkoxides that have bridging
or bridgingchelating coordination capabilities. The
trifluoroacetate ligand isalso known to be able to easily change
its coordination from biden-tate tomonodentate, according to the
electronic and steric require-ments of the central metal atom, thus
improving the chances ofobtaining a stable, well-defined,
bimetallic precursor complex.[30]
The precursor [Co2Ti(m3-O)(TFA)6(THF)3] (1) was prepared
bystoichiometric reaction of Co(OAc)2.4H2O with Ti(
iPrO)4 andtrifluoroacetic acid (TFAH) in THF at room temperature
undermild conditions as shown in equation (1):
The reaction seems to proceed through the hydrated
startingmaterial accompanied by the loss of acetate and
isopropanolresulting in the formation of oxo-bridged complex. The
precursor(1) as crystallized from THF has a cobalt:titanium ratio
of 2:1, isstable in air and soluble in organic solvents such as
toluene andTHF. Melting point, elemental analysis, FT-IR, TGA and
single-crystalX-ray analysis were conducted to characterize
precursor 1. The IRabsorption bands of 1 are consistent with those
reported in theliterature for its acetate analogue.[31] Two
characteristic bands thatappear at 1679 and 1468 cm1 in the IR
spectrum can be attributedto COO nasym and COO nsym vibrations,
respectively. The differ-ence between n(COO)asym and n(COO)sym is
approximately200 cm1 and suggests the presence of bridging TFA
ligands.Strong absorptions due to CF and CO stretching
vibrationsobserved at 1198 and 1146 cm1, respectively, correspond
to theTFA group.[32] Low-intensity absorptions at 522 and 461 cm1
canbe assigned to nMO vibrations.[33]
Structural Analysis
The crystal structure of precursor 1 is depicted in Fig. F11 and
crys-tal data and refinement parameters are given in Table 1.
Selectedbond distances and angles are given in Table T22.
The geometry of 1 is based on an isosceles triangular
Co2Tifragment, made up from two Co(II) atoms and one Ti(IV)
atom
Figure 1. ORTEP diagram of precursor [Co2Ti(m3-O)(TFA)6(THF)3]
(1) with atom labels for metal, oxygen and fluorine atoms. Symmetry
operator (i):x, y+1/2, z. Disorder of one of the TFA anions and the
THF molecule located on a mirror plane are omitted for clarity
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Cobalt titanatecobalt oxide composite thin films
Appl. Organometal. Chem. (2012) Copyright 2012 John Wiley &
Sons, Ltd. wileyonlinelibrary.com/journal/aoc
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with one oxygen (m3-O7) at the centre of the triangle.
Thisstructure is analogous to those of similar compounds reportedin
the literature.[34] Six bridging trifluoroacetate anions
arrangedalong the rim join the metal atoms through carboxylate
oxygenatoms, reinforcing the triangular framework: the
carboxylategroups display a bridging O, Oi coordination (symmetry
operator(i): x, y+ 1/2, z). The oxygen donor atoms of the THF
moleculescomplete the coordination of each 3d-metal to six, so that
eachCo2+ and Ti4+ ion exhibits a distorted octahedral environmentof
oxygen atoms. The co-planarity of the m3-O7 atom with themetal
triangle shows that it is an sp2-hybridized oxide ion,removing the
ambiguity associated with a possible m3-OH
bridge (no electron density indicating the presence of a
hydro-gen atom was found in difference density maps). The
m3-OCodistance [2.1069(11) ] is greater than the m3-O Ti value
[1.755(2) ] due to the larger ionic radius of Co2+.[35] The
TiO7Cobond angles [123.31(5) and 123.32(5)] are slightly larger
thanthe CoO7Co angle [113.35(9)]. For the Ti4+ ion, three sets
ofvalues of the TiO bond lengths are found: short m3-O7 Tidistances
(1.755(2) ), two intermediate TiO distances (one2.0027(16) for TiO6
and TiO6i and a second for TiO4and TiO4i(2.0185(16) ), where O4 and
O6 are oxygenatoms of the carboxylate bridges), and longer TiOTHF
bonds(2.180(2) ). The bond distances TiO7 and CoO7 arecomparable to
previously reported bond lengths.[37]Q2 For the Co2+ ions, the
CoOCOO bond lengths [2.0402(15) , 2.0618(15) ,2.0965(15) and
2.0791(14) ] are in good agreement with thebond lengths in
analogous trinuclear acetate complexes.[37]
The CoOTHF bond length (2.0611(15) ) is shorter than theTiOTHF
bond length (2.180(2) ) and similar to such bondlengths in
Co4(THF)4(TFA)8(m-OH)2Cu2(dmae)2.
[36,37]Q3
Thermal Decomposition and Thin Film Characterization
The thermal characteristics of precursor 1 have been examinedby
thermogravimetric analysis, performed under an inert atmo-sphere of
flowing nitrogen gas (25mlmin1) and a heating rate
of 12 Cmin1. The TGA curve (Fig. F33) shows a rapid mass lossat
temperatures above 129 C and there appear to be threestages of
weight loss. The first stage begins at 129 C and iscompleted at 246
C with a weight loss of 28.58%. The secondstep starts at 259 C and
is completed at 363 C with a maximumweight loss of 46.16%. Directly
following is the third and laststage, ranging from 363 to 480 C,
resulting in a stable residualamount of 21.76% of the initial
weight of precursor 1. Furtherheating above 480 C to up to 900 C
did not cause anyadditional change in weight, indicating thermal
stability of thedecomposition product. The residual mass is in good
agreementwith the expected composition for CoTiO3CoO (21.76%),
indicat-ing that the precursor has decomposed quantitatively into
acomposite oxide phase. DTG curves confirm the occurrence ofthree
major steps of decomposition of the precursor and
indicatetemperatures of maximum heat flow at 233, 337 and 415C
ineach degradation step, respectively.
An X-ray diffractogram of the thin films deposited from
precur-sor 1 at 500 C indicates the formation of a composite of
twodifferent types of crystalline oxide phases: CoTiO3 and CoO(Fig.
F44). Peaks indexed by X at 2= 24.10, 33.17, 35.68, 40.93,
Table 2. Selected bond lengths () and angles () for precursor
1,[Co2Ti(m3-O)(TFA)6(THF)3]. Symmetry operator (i) as in Figure
1
Bond distances ()Co1O1 2.0402(15) Ti2O6 2.0028(16)
Co1O2 2.0618(15) Ti2O7 1.755(2)
Co1O3 2.0965(15) Ti2O8 2.180(2)
Co1O5 2.0791(14) Ti2O6i 2.0027(16)
Co1O7 2.1069(11) Ti2O4 i 2.0185(16)
Bond angles ()O9Co1O7 176.75(7) O5Co1O3 87.64(6)
O2Co1O7 93.15(7) O1Co1O7 96.89(7)
O5Co1O7 91.19(7) Co1O7Co i 113.35(9)
O3Co1O7 89.48(7) O7Ti2O6 98.09(6)
Ti2O7Co1 123.32(5) O6iTi2O6 93.62(10)
O1Co1O9 86.34(6) O7Ti2O4 95.83(6)
O9Co1O2 87.15(6) O6i Ti2O4 165.58(7)
O1Co1O5 171.23(6) O6Ti2O4 88.13(7)
O9Co1O5 85.56(6) O4i Ti2O4 86.71(9)
O2Co1O5 93.33(6) O7Ti2O8 177.71(9)
O1Co1O3 89.04(7) O6Ti2O8 83.46(6)
O9Co1O3 90.27(6) O4i Ti2O4 86.71(9)
O2Co1O3 177.17(6) Co1O7Co1 123.32(5)
Figure 3. Thermogravimetric plot showing loss in weight with
increasein temperature for precursor 1
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Figure 2. Oxygen-coordinated octahedral spheres of Co1, and Ti2
in thecore unit of complex 1. Symmetry operator (i) as in Fig.
1
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& Sons, Ltd. Appl. Organometal. Chem. (2012)
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49.39, 53.56, 57.02, 57.14, 63.91, 65.53, 71.11, 78.99 and
87.70correspond to reflections (012), (104), 210 , 213 , (024),
(116),(018), (122), (030), (125) (1010), 431 and 426 ,
respectively,are in good agreement with reported crystallographic
values
for hexagonal CoTiO3[36] with the space group R3 and lattice
dimensions of a= b= 5.065 and c= 13.920
[intensifiedcharge-coupled device (ICCD)Q4 : 980016548]. The
reflections(111) and (113) produced at 2=37.29 and 73.99 marked byY
relate to CoO phase,[37] which has a cubic structure with
the space group Fm3m, and cubic axis length of 4.263
[ICCD:980009865]. The lines at 2= 43.34, 62.58, 73.99 correspondsto
both hexagonal CoTiO3 (202), (214), (420)Q5 planes and cubicCoO
(002), (022) (113) planes.
The XRD peak patterns of the thin films deposited from
precur-sor (1) at 500 C indicate its clean decomposition as it did
notshow any impurities such as TiO2, Co2O3, Co3O4, Co2TiO4
orCoTi2O4 which were frequently observed in earlier studied
[1925]
cobalt titanium oxide preparative methods involving heating
to600 C and above.[21]Q6
It is inferred that impurity-free CoTiO3CoO composite thin
filmscan be deposited directly on soda glass substrate from
precursor 1
at 500 C, as indicated in equation (1). The resulting
greenish-coloured thin films reflect light in multicoloured fringes
whenobserved at different angles. Good adhesion properties
wereconfirmed when the films were subjected to the scotch tape
test.
Co2Ti m3 O TFA 6 THF 3
1 !500C
AACVDCoTiO3 CoO Volatiles 2
Generally, fabrication of thin films of titanium-based
compositesfrom pre-synthesized powders for industrial applications
requirestemperatures of 1300 C or higher. It has been
reported[15,38,39] thatduring fabrication of such films part of the
Ti4+ ions are reduced toTi3+ and other low-valent titanium species,
which negatively affectsthe dielectric properties and quality of
these films. Since precursor 1cleanly decomposes at a relatively
low temperature (~500 C),reduction of Ti4+ is avoided, resulting in
thin films containingstoichiometric composite oxides while
preserving the dielectricproperties of the targeted Ti(IV)
materials. Precursor 1 also has thepotential to be used for the
growth of high-melting ceramiccomposite films on low-melting
substrates such as soda glass withsome control over particle size
andmorphology in the film, therebymeeting the substrate
requirements as well as microstructuralrequirements in certain
applications.[42,43] Q7
The SEM image of the CoTiO3CoO composite thin filmfabricated at
500 C indicates the formation flower petal-likemorphology with
well-defined grain boundaries and with featuresizes ranging between
2 and 6mm as shown in Fig. F66.
EDX spectra (Fig. 6) determined the stoichiometric composi-tion
of the CoTiO3CoO composite thin films, indicating thatthe molar
ratio of Co/Ti obtained from the peak areas of theEDX spectra is
15.61/7.51 and thus agrees well to the expected2:1 ratio of
CoTiO3CoO composite thin films. Q9
We believe that the development of suitable precursors,selection
of an appropriate CVD technique to grow thin filmsand mastering of
deposition conditions are of crucial importancefor further
advancements of new technologies and applications.A recent example
emphasizing this is the report by Wijayanthaand co-workers who used
the AACVD route to deposit SnO2/ZnO composite films for novel
photovoltaic cells and optoelec-tronic devices.[40,41]
Figure 5. Comparison of CoTiO3CoO composite with standard
CoTiO3and CoO patterns
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Figure 4. X-ray diffractogram of the composite oxide obtained
fromprecursor 1. X indicates peaks corresponding to CoTiO3 and Y
indicatespeaks corresponding to CoO
Figure 6. Q8High-resolution SEM image of CoTiO3CoO composite
thinfilms deposited on soda glass substrate at 500 C from precursor
1
Cobalt titanatecobalt oxide composite thin films
Appl. Organometal. Chem. (2012) Copyright 2012 John Wiley &
Sons, Ltd. wileyonlinelibrary.com/journal/aoc
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Conclusions
The single molecular complex [Co2Ti(m3-O)(TFA)6(THF)3] (1)
hasbeen synthesized and characterized by physicochemical
methods.Owing to its readily availability, stability and solubility
in organicsolvents, complex 1 is a suitable precursor for the
deposition ofcobalt titanatecobalt oxide composite thin films at
500 C by theAACVDmethod. X-ray diffraction and SEM/EDX analysis of
thin filmsdeposited on a glass substrate indicate the formation of
flower-likemorphology composed of crystalline phases of a
CoTiO3CoOcomposite in which the atomic ratio of Co/Ti is almost
equal tothe expected ratio of 2:1 of the precursor. Surface
morphology,structure and composition observed in the CoTiO3CoO
compositethin films imply that further customization of such
systems could bevaluable for technological applications.
Acknowledgements
The authors acknowledge the High-Impact Research Grant No.
UM.C/625/1/035, the UMRG scheme (Grant No. RG097/10AET)
PakistanScience Foundation (PSF) Project No. PSF/Res/C-QU/CHEM.
(408),Higher Education Commission (HEC) Project No. 1-308/
andILPUFU/HEC/2009 for funding this research. The X-ray
diffractometerwas funded by NSF Grant No. 0087210, Ohio Board of
Regents GrantCAP-491, and by Youngstown State University. AAT and
KGUWacknowledge the support from UK EPSRC.
SUPPORTING INFORMATIONQ10
Complete structural data were deposited with the
CambridgeCrystallographic Data Base. CCDC 808929 contains the
supple-mentary crystallographic data for Precursor (1). The data
can beobtained free of charge from the Cambridge
CrystallographicData Centre via
www.ccdc.cam.ac.uk/data_request.cif.
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depositedfrom precursor 1
M. A. Ehsan et. al.
wileyonlinelibrary.com/journal/aoc Copyright 2012 John Wiley
& Sons, Ltd. Appl. Organometal. Chem. (2012)
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Full Paper
Cobalt titanatecobalt oxide composite thin films deposited from
heterobimetallic precursor
Muhammad Ali Ehsan, Muhammad Adil Mansoor, Muhammad Mazhar, Asif
Ali Tahir, Mazhar Hamid and K. G. UpulWijayantha
Synthesis and characterization of heterobimetallic complex
[Co2Ti(m3-O)(TFA)6(THF)3] (1) is reported for implementationfor
deposition of CoTiO3-CoO composite thin films at 500 C by AACVD
technique. The films are characterized by PXRD,SEM and EDX indicate
their possible application in technology.
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