MCATM SEMINAR Co-hosted by Materials Science Engineering monash.edu/mcatm Info: [email protected] Date: Wednesday 15 March 2017 – 3:00PM Venue: G29/G30 New Horizons Centre, 20 Research Way Monash University, Clayton Abstract: The past decade has seen an explosion in research on 2D materials cover- ing a broad spectrum of applications ranging from sensing to electronics. However many fundamental challenges towards realizing the full potential of these materials for future technologies still remain. Recent efforts in our group at reducing contact resistance to MoS 2 , selectively doping it to realize high performance lateral p-n junctions, and understanding the origins of hys- teresis in MoS 2 transistors will be discussed. Infrastructural and fabrication expertise relevant to 2D material characterization and device fabrication available in our research group will also be presented. About the Speaker: Prof. Saurabh Lodha graduated with a B. Tech (EE) from IIT Bombay in 1999 and with a Masters (ECE) and PhD (ECE) from Purdue University in 2001 and 2004 respectively. His graduate research focused on III-V metal/semicon- ductor interfaces and molecular electronics. From 2005-2010 he worked at Intel Cor- poration in Portland, USA where he was part of the team responsible for the research and development of 45nm, 32nm and 22nm CMOS technologies. He joined IIT Bombay in July 2010 where his current research interests are in the areas of advanced CMOS, 2D TMD devices and Si photovoltaics. PROF. SAURABH LODHA INDIAN INSTITUTE OF TECHNOLOGY, BOMBAY Contact resistance, doping and carrier transport in emerging MoS 2 devices Atomically Thin Materials Monash Centre for
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MCATM SEMINARCo-hosted by Materials Science Engineering
monash.edu/mcatmInfo: [email protected]
Date: Wednesday 15 March 2017 – 3:00PMVenue: G29/G30 New Horizons Centre, 20 Research Way Monash University, Clayton
Abstract: The past decade has seen an explosion in research on 2D materials cover-ing a broad spectrum of applications ranging from sensing to electronics. However many fundamental challenges towards realizing the full potential of these materials for future technologies still remain.
Recent efforts in our group at reducing contact resistance to MoS2, selectively doping it to realize high performance lateral p-n junctions, and understanding the origins of hys-teresis in MoS2 transistors will be discussed. Infrastructural and fabrication expertise relevant to 2D material characterization and device fabrication available in our research group will also be presented.
About the Speaker: Prof. Saurabh Lodha graduated with a B. Tech (EE) from IIT Bombay in 1999 and with a Masters (ECE) and PhD (ECE) from Purdue University in 2001 and 2004 respectively. His graduate research focused on III-V metal/semicon-ductor interfaces and molecular electronics. From 2005-2010 he worked at Intel Cor-poration in Portland, USA where he was part of the team responsible for the research and development of 45nm, 32nm and 22nm CMOS technologies. He joined IIT Bombay in July 2010 where his current research interests are in the areas of advanced CMOS, 2D TMD devices and Si photovoltaics.
PROF. SAURABH LODHAINDIAN INSTITUTE OF TECHNOLOGY, BOMBAY
Contact resistance, doping andcarrier transport inemerging MoS2 devices
Atomically Thin MaterialsMonash Centre for
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