8/3/2019 C.I 74HC00
1/16
1. General description
The 74HC00; 74HCT00 are high-speed Si-gate CMOS devices that comply with JEDEC
standard no. 7A. They are pin compatible with Low-power Schottky TTL (LSTTL).
The 74HC00; 74HCT00 provides a quad 2-input NAND function.
2. Features and benefits
Input levels:
For 74HC00: CMOS level
For 74HCT00: TTL level
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from 40 C to +85 C and from 40 C to +125 C
3. Ordering information
74HC00; 74HCT00Quad 2-input NAND gate
Rev. 5 25 November 2010 Product data sheet
Table 1. Ordering information
Type number Package
Temperature range Name Description Version
74HC00N 40 C to +125 C DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1
74HCT00N
74HC00D 40 C to +125 C SO14 plastic small outline package; 14 leads; body width
3.9 mm
SOT108-1
74HCT00D
74HC00DB 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body
width 5.3 mm
SOT337-1
74HCT00DB
74HC00PW 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT402-1
74HCT00PW
74HC00BQ 40 C to +125 C DHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.5 3 0.85 mm
SOT762-1
74HCT00BQ
8/3/2019 C.I 74HC00
2/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 2 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
4. Functional diagram
5. Pinning information
5.1 Pinning
5.2 Pin description
Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram (one gate)
mna212
1A1Y
1B
1
23
2A2Y
2B
4
56
3A3Y
3B
9
108
4A4Y
4B
12
1311
mna246
31
2&
64
5&
89
10&
1112
13&
mna211
A
B
Y
(1) This is not a supply pin. The substrate is attached to this
pad using conductive die attach material. There is no
electrical or mechanical requirement to solder this pad.
However, if it is soldered, the solder land should remain
floating or be connected to GND.
Fig 4. Pin configuration DIP14, SO14 and (T)SSOP14 Fig 5. Pin configuration DHVQFN14
74HC0074HCT00
1A VCC
1B 4B
1Y 4A
2A 4Y
2B 3B
2Y 3A
GND 3Y
001aal323
1
2
3
4
5
6
7 8
10
9
12
11
14
13
001aal324
74HC0074HCT00
GND(1)
Transparent top view
2Y 3A
2B 3B
2A 4Y
1Y 4A
1B 4B
GND
3Y
1A
VCC
6 9
5 10
4 11
3 12
2 13
7 8
1 14
terminal 1
index area
Table 2. Pin description
Symbol Pin Description
1A to 4A 1, 4, 9, 12 data input
1B to 4B 2, 5, 10, 13 data input
8/3/2019 C.I 74HC00
3/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 3 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; X = dont care.
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For DIP14 package: Ptot derates linearly with 12 mW/K above 70 C.
For SO14 package: Ptot derates linearly with 8 mW/K above 70 C.
For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C.
For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 C.
1Y to 4Y 3, 6, 8, 11 data output
GND 7 ground (0 V)
VCC 14 supply voltage
Table 2. Pin description continued
Symbol Pin Description
Table 3. Function table[1]
Input Output
nA nB nY
L X H
X L H
H H L
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
VCC supply voltage 0.5 +7 V
IIK input clamping current VI < 0.5 V or VI > VCC + 0.5 V [1] - 20 mA
IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V[1] - 20 mA
IO output current 0.5 V < VO < VCC + 0.5 V - 25 mA
ICC supply current - 50 mA
IGND ground current 50 - mA
Tstg storage temperature 65 +150 C
Ptot total power dissipation[2]
DIP14 package - 750 mW
SO14, (T)SSOP14 and
DHVQFN14 packages
- 500 mW
8/3/2019 C.I 74HC00
4/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 4 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions 74HC00 74HCT00 Unit
Min Typ Max Min Typ Max
VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
VI input voltage 0 - VCC 0 - VCC V
VO output voltage 0 - VCC 0 - VCC V
Tamb ambient temperature 40 +25 +125 40 +25 +125 C
t/V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V
VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V
VCC = 6.0 V - - 83 - - - ns/V
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74HC00
VIH HIGH-level
input voltage
VCC = 2.0 V - 1.2 - 1.5 - 1.5 - V
VCC = 4.5 V - 2.4 - 3.15 - 3.15 - VVCC = 6.0 V - 3.2 - 4.2 - 4.2 - V
VIL LOW-level
input voltage
VCC = 2.0 V - 0.8 - - 0.5 - 0.5 V
VCC = 4.5 V - 2.1 - - 1.35 - 1.35 V
VCC = 6.0 V - 2.8 - - 1.8 - 1.8 V
VOH HIGH-level
output voltage
VI = VIH or VIL
IO = 20 A; VCC = 2.0 V - 2.0 - 1.9 - 1.9 - V
IO = 20 A; VCC = 4.5 V - 4.5 - 4.4 - 4.4 - V
IO = 20 A; VCC = 6.0 V - 6.0 - 5.9 - 5.9 - V
IO = 4.0 mA; VCC = 4.5 V - 4.32 - 3.84 - 3.7 - V
IO = 5.2 mA; VCC = 6.0 V - 5.81 - 5.34 - 5.2 - VVOL LOW-level
output voltage
VI = VIH or VIL
IO = 20 A; VCC = 2.0 V - 0 - - 0.1 - 0.1 V
IO = 20 A; VCC = 4.5 V - 0 - - 0.1 - 0.1 V
IO = 20 A; VCC = 6.0 V - 0 - - 0.1 - 0.1 V
IO = 4.0 mA; VCC = 4.5 V - 0.15 - - 0.33 - 0.4 V
IO = 5.2 mA; VCC = 6.0 V - 0.16 - - 0.33 - 0.4 V
II input leakage
current
VI = VCC or GND;
VCC = 6.0 V
- - - - 1 - 1 A
ICC supply current VI = VCC or GND; IO = 0 A ;
VCC = 6.0 V
- - - - 20 - 40 A
8/3/2019 C.I 74HC00
5/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 5 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
10. Dynamic characteristics
CI input
capacitance
- 3.5 - - - - - pF
74HCT00
VIH HIGH-level
input voltage
VCC = 4.5 V to 5.5 V - 1.6 - 2.0 - 2.0 - V
VIL LOW-level
input voltage
VCC = 4.5 V to 5.5 V - 1.2 - - 0.8 - 0.8 V
VOH HIGH-level
output voltage
VI = VIH or VIL; VCC = 4.5 V
IO = 20 A - 4.5 - 4.4 - 4.4 - V
IO = 4.0 mA - 4.32 - 3.84 - 3.7 - V
VOL LOW-level
output voltage
VI = VIH or VIL; VCC = 4.5 V
IO = 20 A; VCC = 4.5 V - 0 - - 0.1 - 0.1 V
IO = 5.2 mA; VCC = 6.0 V - 0.15 - - 0.33 - 0.4 V
II input leakage
current
VI = VCC or GND;
VCC = 6.0 V
- - - - 1 - 1 A
ICC supply current VI = VCC or GND; IO = 0 A ;
VCC = 6.0 V
- - - - 20 - 40 A
ICC additional
supply current
per input pin;
VI = VCC 2.1 V; IO = 0 A ;
other inputs at VCC or GND;
VCC = 4.5 V to 5.5 V
- 150 - - 675 - 735 A
CI input
capacitance
- 3.5 - - - - - pF
Table 6. Static characteristics continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
GND = 0 V; CL = 50 pF; for load circuit seeFigure 7.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Max
(85 C)
Max
(125 C)
74HC00
tpd propagation delay nA, nB to nY; see Figure 6[1]
VCC = 2.0 V - 25 - 115 135 ns
VCC = 4.5 V - 9 - 23 27 ns
VCC = 5.0 V; CL = 15 pF - 7 - - - ns
VCC = 6.0 V - 7 - 20 23 ns
tt transition time see Figure 6 [2]
VCC = 2.0 V - 19 - 95 110 ns
VCC = 4.5 V - 7 - 19 22 ns
VCC = 6.0 V - 6 - 16 19 ns
8/3/2019 C.I 74HC00
6/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 6 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
[1] tpd is the same as tPHL and tPLH.
[2] tt is the same as tTHL and tTLH.
[3] CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of outputs.
11. Waveforms
CPD power dissipation
capacitance
per package; VI = GND to VCC [3] - 22 - - - pF
74HCT00
tpd propagation delay nA, nB to nY; see Figure 6[1]
VCC = 4.5 V - 12 - 24 29 ns
VCC = 5.0 V; CL = 15 pF - 10 - - - ns
tt transition time VCC = 4.5 V; see Figure 6[2] - - - 29 22 ns
CPD power dissipation
capacitance
per package;
VI = GND to VCC 1.5 V
[3] - 22 - - - pF
Table 7. Dynamic characteristics continued
GND = 0 V; CL = 50 pF; for load circuit seeFigure 7.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Max
(85 C)
Max
(125 C)
Measurement points are given in Table 9.
VOL and VOH are typical voltage output levels that occur with the output load.
Fig 6. Input to output propagation delays
001aai814
nA, nB input
VI
GND
VOH
VOL
nY output
tTHL tTLH
VM
VM
VX
VY
tPHL tPLH
Table 8. Measurement points
Type Input Output
VM VM VX VY
74HC00 0.5VCC 0.5VCC 0.1VCC 0.9VCC
74HCT00 1.3 V 1.3 V 0.1VCC 0.9VCC
8/3/2019 C.I 74HC00
7/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 7 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
Test data is given in Table 9.
Definitions test circuit:
RT = termination resistance should be equal to output impedance Zo of the pulse generator.
CL = load capacitance including jig and probe capacitance.
Fig 7. Load circuitry for measuring switching times
001aah768
tW
tW
tr
trtf
VM
VI
negative
pulse
GND
VI
positive
pulse
GND
10 %
90 %
90 %
10 %
VM VM
VM
tf
VCC
DUT
RT
VI VO
CL
G
Table 9. Test data
Type Input Load TestVI tr, tf CL
74HC00 VCC 6.0 ns 15 pF, 50 pF tPLH, tPHL
74HCT00 3.0 V 6.0 ns 15 pF, 50 pF tPLH, tPHL
8/3/2019 C.I 74HC00
8/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 8 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
12. Package outline
Fig 8. Package outline SOT27-1 (DIP14)
UNIT Amax.
1 2 (1) (1)b1 c D(1)ZE e MHL
REFERENCESOUTLINE
VERSION
EUROPEAN
PROJECTIONISSUE DATE
IEC JEDEC JEITA
mm
inches
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
SOT27-199-12-27
03-02-13
Amin.
Amax.
bmax.
wMEe1
1.73
1.13
0.53
0.38
0.36
0.23
19.50
18.55
6.48
6.20
3.60
3.050.2542.54 7.62
8.25
7.80
10.0
8.32.24.2 0.51 3.2
0.068
0.044
0.021
0.015
0.77
0.73
0.014
0.009
0.26
0.24
0.14
0.120.010.1 0.3
0.32
0.31
0.39
0.330.0870.17 0.02 0.13
050G04 MO-001 SC-501-14
MH
c
(e )1
ME
A
L
sea
tingp
lane
A1
w Mb1
e
D
A2
Z
14
1
8
7
b
E
pin 1 index
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1
8/3/2019 C.I 74HC00
9/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 9 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
Fig 9. Package outline SOT108-1 (SO14)
UNITA
max.A1 A2 A3 bp c D
(1) E(1) (1)e HE L Lp Q Zywv
REFERENCESOUTLINE
VERSION
EUROPEAN
PROJECTIONISSUE DATE
IEC JEDEC JEITA
mm
inches
1.750.25
0.10
1.45
1.250.25
0.49
0.36
0.25
0.19
8.75
8.55
4.0
3.81.27
6.2
5.8
0.7
0.6
0.7
0.3 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
1.0
0.4
SOT108-1
X
w M
AA1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
v M A
(A )3
A
7
8
1
14
y
076E06 MS-012
pin 1 index
0.0690.010
0.004
0.057
0.0490.01
0.019
0.014
0.0100
0.0075
0.35
0.34
0.16
0.150.05
1.05
0.0410.244
0.228
0.028
0.024
0.028
0.0120.01
0.25
0.01 0.0040.039
0.016
99-12-27
03-02-19
0 2.5 5 mm
scale
SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
8/3/2019 C.I 74HC00
10/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 10 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
Fig 10. Package outline SOT337-1 (SSOP14)
UNIT A1 A2 A3 bp c D(1) E (1) e HE L Lp Q Zywv
REFERENCESOUTLINE
VERSION
EUROPEAN
PROJECTIONISSUE DATE
IEC JEDEC JEITA
mm0.21
0.05
1.80
1.650.25
0.38
0.25
0.20
0.09
6.4
6.0
5.4
5.20.65 1.25 0.2
7.9
7.6
1.03
0.63
0.9
0.7
1.4
0.98
0
o
o0.13 0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT337-199-12-27
03-02-19
(1)
w Mbp
D
HE
E
Z
e
c
v M A
X
A
y
1 7
14 8
AA1
A2
Lp
Q
detail X
L
(A )3
MO-150
pin 1 index
0 2.5 5 mm
scale
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1
A
max.
2
8/3/2019 C.I 74HC00
11/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 11 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
Fig 11. Package outline SOT402-1 (TSSOP14)
UNIT A1 A2 A3 bp c D(1) E (2) (1)e HE L Lp Q Zywv
REFERENCESOUTLINE
VERSION
EUROPEAN
PROJECTIONISSUE DATE
IEC JEDEC JEITA
mm0.15
0.05
0.95
0.80
0.30
0.19
0.2
0.1
5.1
4.9
4.5
4.30.65
6.6
6.2
0.4
0.3
0.72
0.388
0
o
o0.13 0.10.21
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
0.75
0.50
SOT402-1 MO-15399-12-27
03-02-18
w Mbp
D
Z
e
0.25
1 7
14 8
AA1
A2
Lp
Q
detail X
L
(A )3
HE
E
c
v M A
XA
y
0 2.5 5 mm
scale
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1
A
max.
1.1
pin 1 index
8/3/2019 C.I 74HC00
12/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 12 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
Fig 12. Package outline SOT762-1 (DHVQFN14)
terminal 1
index area
0.51
A1 EhbUNIT ye
0.2
c
REFERENCESOUTLINE
VERSION
EUROPEAN
PROJECTIONISSUE DATE
IEC JEDEC JEITA
mm3.1
2.9
Dh
1.65
1.35
y1
2.6
2.4
1.15
0.85
e1
20.30
0.18
0.05
0.000.05 0.1
DIMENSIONS (mm are the original dimensions)
SOT762-1 MO-241 - - -- - -
0.5
0.3
L
0.1
v
0.05
w
0 2.5 5 mm
scale
SOT762-1DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;
14 terminals; body 2.5 x 3 x 0.85 mm
A(1)
max.
AA1
c
detail X
yy1 Ce
L
Eh
Dh
e
e1
b
2 6
13 9
8
71
14
X
D
E
C
B A
02-10-17
03-01-27
terminal 1
index area
AC
C
Bv M
w M
E(1)
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
D(1)
8/3/2019 C.I 74HC00
13/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 13 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
13. Abbreviations
14. Revision history
Table 10. Abbreviations
Acronym Description
CMOS Complementary Metal-Oxide Semiconductor
DUT Device Under Test
ESD ElectroStatic Discharge
HBM Human Body Model
LSTTL Low-power Schottky Transistor-Transistor Logic
MM Machine Model
TTL Transistor-Transistor Logic
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
74HC_HCT00 v.5 20101125 Product data sheet - 74HC_HCT00 v.4
Modifications: Figure note [1] of Figure 5: changed.
74HC_HCT00 v.4 20100111 Product data sheet - 74HC_HCT00 v.3
74HC_HCT00 v.3 20030630 Product data sheet - 74HC_HCT00_CNV v.2
74HC_HCT00_CNV v.2 19970826 Product specification - -
8/3/2019 C.I 74HC00
14/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 14 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
15. Legal information
15.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term short data sheet is explained in section Definitions.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at URL http://www.nxp.com.
15.2 DefinitionsDraft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (inc luding - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial saleof NXP Semiconductors.
Right to make changes NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications This NXP
Semiconductors product has been qualified for use in automotiveapplications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customers own risk.
Applications Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customers sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customers applications and
products planned, as well as for the planned application and use ofcustomers third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customers applications or products, or the application or use by customers
third party customer(s). Customer is responsible for doing all necessary
testing for the customers applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customers third party
customer(s). NXP does not accept any liability in this respect.
Limiting values Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customers general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short ] data sheet Development This document contains data from the object ive specification for product development.
Preliminary [short ] data sheet Quali fication This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
8/3/2019 C.I 74HC00
15/16
74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 25 November 2010 15 of 16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
Export control This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
15.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
8/3/2019 C.I 74HC00
16/16
NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate
NXP B.V. 2010. All rights reserved.For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]
Date of release: 25 November 2010
Document identifier: 74HC_HCT00
Please be aware that important notices concerning this document and the product(s)described herein, have been included in section Legal information.
17. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 1
4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
5 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
5.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Functional description . . . . . . . . . . . . . . . . . . . 3
7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Recommended operating conditions. . . . . . . . 4
9 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
10 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
11 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
15.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
15.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
15.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
15.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
16 Contact information. . . . . . . . . . . . . . . . . . . . . 15
17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16