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C.I 74HC00

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    1. General description

    The 74HC00; 74HCT00 are high-speed Si-gate CMOS devices that comply with JEDEC

    standard no. 7A. They are pin compatible with Low-power Schottky TTL (LSTTL).

    The 74HC00; 74HCT00 provides a quad 2-input NAND function.

    2. Features and benefits

    Input levels:

    For 74HC00: CMOS level

    For 74HCT00: TTL level

    ESD protection:

    HBM JESD22-A114F exceeds 2000 V

    MM JESD22-A115-A exceeds 200 V

    Multiple package options

    Specified from 40 C to +85 C and from 40 C to +125 C

    3. Ordering information

    74HC00; 74HCT00Quad 2-input NAND gate

    Rev. 5 25 November 2010 Product data sheet

    Table 1. Ordering information

    Type number Package

    Temperature range Name Description Version

    74HC00N 40 C to +125 C DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1

    74HCT00N

    74HC00D 40 C to +125 C SO14 plastic small outline package; 14 leads; body width

    3.9 mm

    SOT108-1

    74HCT00D

    74HC00DB 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body

    width 5.3 mm

    SOT337-1

    74HCT00DB

    74HC00PW 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads;

    body width 4.4 mm

    SOT402-1

    74HCT00PW

    74HC00BQ 40 C to +125 C DHVQFN14 plastic dual in-line compatible thermal enhanced very

    thin quad flat package; no leads; 14 terminals;

    body 2.5 3 0.85 mm

    SOT762-1

    74HCT00BQ

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 2 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    4. Functional diagram

    5. Pinning information

    5.1 Pinning

    5.2 Pin description

    Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram (one gate)

    mna212

    1A1Y

    1B

    1

    23

    2A2Y

    2B

    4

    56

    3A3Y

    3B

    9

    108

    4A4Y

    4B

    12

    1311

    mna246

    31

    2&

    64

    5&

    89

    10&

    1112

    13&

    mna211

    A

    B

    Y

    (1) This is not a supply pin. The substrate is attached to this

    pad using conductive die attach material. There is no

    electrical or mechanical requirement to solder this pad.

    However, if it is soldered, the solder land should remain

    floating or be connected to GND.

    Fig 4. Pin configuration DIP14, SO14 and (T)SSOP14 Fig 5. Pin configuration DHVQFN14

    74HC0074HCT00

    1A VCC

    1B 4B

    1Y 4A

    2A 4Y

    2B 3B

    2Y 3A

    GND 3Y

    001aal323

    1

    2

    3

    4

    5

    6

    7 8

    10

    9

    12

    11

    14

    13

    001aal324

    74HC0074HCT00

    GND(1)

    Transparent top view

    2Y 3A

    2B 3B

    2A 4Y

    1Y 4A

    1B 4B

    GND

    3Y

    1A

    VCC

    6 9

    5 10

    4 11

    3 12

    2 13

    7 8

    1 14

    terminal 1

    index area

    Table 2. Pin description

    Symbol Pin Description

    1A to 4A 1, 4, 9, 12 data input

    1B to 4B 2, 5, 10, 13 data input

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 3 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    6. Functional description

    [1] H = HIGH voltage level; L = LOW voltage level; X = dont care.

    7. Limiting values

    [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

    [2] For DIP14 package: Ptot derates linearly with 12 mW/K above 70 C.

    For SO14 package: Ptot derates linearly with 8 mW/K above 70 C.

    For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C.

    For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 C.

    1Y to 4Y 3, 6, 8, 11 data output

    GND 7 ground (0 V)

    VCC 14 supply voltage

    Table 2. Pin description continued

    Symbol Pin Description

    Table 3. Function table[1]

    Input Output

    nA nB nY

    L X H

    X L H

    H H L

    Table 4. Limiting values

    In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

    Symbol Parameter Conditions Min Max Unit

    VCC supply voltage 0.5 +7 V

    IIK input clamping current VI < 0.5 V or VI > VCC + 0.5 V [1] - 20 mA

    IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V[1] - 20 mA

    IO output current 0.5 V < VO < VCC + 0.5 V - 25 mA

    ICC supply current - 50 mA

    IGND ground current 50 - mA

    Tstg storage temperature 65 +150 C

    Ptot total power dissipation[2]

    DIP14 package - 750 mW

    SO14, (T)SSOP14 and

    DHVQFN14 packages

    - 500 mW

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 4 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    8. Recommended operating conditions

    9. Static characteristics

    Table 5. Recommended operating conditions

    Voltages are referenced to GND (ground = 0 V)

    Symbol Parameter Conditions 74HC00 74HCT00 Unit

    Min Typ Max Min Typ Max

    VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V

    VI input voltage 0 - VCC 0 - VCC V

    VO output voltage 0 - VCC 0 - VCC V

    Tamb ambient temperature 40 +25 +125 40 +25 +125 C

    t/V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V

    VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V

    VCC = 6.0 V - - 83 - - - ns/V

    Table 6. Static characteristics

    At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

    Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit

    Min Typ Max Min Max Min Max

    74HC00

    VIH HIGH-level

    input voltage

    VCC = 2.0 V - 1.2 - 1.5 - 1.5 - V

    VCC = 4.5 V - 2.4 - 3.15 - 3.15 - VVCC = 6.0 V - 3.2 - 4.2 - 4.2 - V

    VIL LOW-level

    input voltage

    VCC = 2.0 V - 0.8 - - 0.5 - 0.5 V

    VCC = 4.5 V - 2.1 - - 1.35 - 1.35 V

    VCC = 6.0 V - 2.8 - - 1.8 - 1.8 V

    VOH HIGH-level

    output voltage

    VI = VIH or VIL

    IO = 20 A; VCC = 2.0 V - 2.0 - 1.9 - 1.9 - V

    IO = 20 A; VCC = 4.5 V - 4.5 - 4.4 - 4.4 - V

    IO = 20 A; VCC = 6.0 V - 6.0 - 5.9 - 5.9 - V

    IO = 4.0 mA; VCC = 4.5 V - 4.32 - 3.84 - 3.7 - V

    IO = 5.2 mA; VCC = 6.0 V - 5.81 - 5.34 - 5.2 - VVOL LOW-level

    output voltage

    VI = VIH or VIL

    IO = 20 A; VCC = 2.0 V - 0 - - 0.1 - 0.1 V

    IO = 20 A; VCC = 4.5 V - 0 - - 0.1 - 0.1 V

    IO = 20 A; VCC = 6.0 V - 0 - - 0.1 - 0.1 V

    IO = 4.0 mA; VCC = 4.5 V - 0.15 - - 0.33 - 0.4 V

    IO = 5.2 mA; VCC = 6.0 V - 0.16 - - 0.33 - 0.4 V

    II input leakage

    current

    VI = VCC or GND;

    VCC = 6.0 V

    - - - - 1 - 1 A

    ICC supply current VI = VCC or GND; IO = 0 A ;

    VCC = 6.0 V

    - - - - 20 - 40 A

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 5 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    10. Dynamic characteristics

    CI input

    capacitance

    - 3.5 - - - - - pF

    74HCT00

    VIH HIGH-level

    input voltage

    VCC = 4.5 V to 5.5 V - 1.6 - 2.0 - 2.0 - V

    VIL LOW-level

    input voltage

    VCC = 4.5 V to 5.5 V - 1.2 - - 0.8 - 0.8 V

    VOH HIGH-level

    output voltage

    VI = VIH or VIL; VCC = 4.5 V

    IO = 20 A - 4.5 - 4.4 - 4.4 - V

    IO = 4.0 mA - 4.32 - 3.84 - 3.7 - V

    VOL LOW-level

    output voltage

    VI = VIH or VIL; VCC = 4.5 V

    IO = 20 A; VCC = 4.5 V - 0 - - 0.1 - 0.1 V

    IO = 5.2 mA; VCC = 6.0 V - 0.15 - - 0.33 - 0.4 V

    II input leakage

    current

    VI = VCC or GND;

    VCC = 6.0 V

    - - - - 1 - 1 A

    ICC supply current VI = VCC or GND; IO = 0 A ;

    VCC = 6.0 V

    - - - - 20 - 40 A

    ICC additional

    supply current

    per input pin;

    VI = VCC 2.1 V; IO = 0 A ;

    other inputs at VCC or GND;

    VCC = 4.5 V to 5.5 V

    - 150 - - 675 - 735 A

    CI input

    capacitance

    - 3.5 - - - - - pF

    Table 6. Static characteristics continued

    At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

    Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit

    Min Typ Max Min Max Min Max

    Table 7. Dynamic characteristics

    GND = 0 V; CL = 50 pF; for load circuit seeFigure 7.

    Symbol Parameter Conditions 25 C 40 C to +125 C Unit

    Min Typ Max Max

    (85 C)

    Max

    (125 C)

    74HC00

    tpd propagation delay nA, nB to nY; see Figure 6[1]

    VCC = 2.0 V - 25 - 115 135 ns

    VCC = 4.5 V - 9 - 23 27 ns

    VCC = 5.0 V; CL = 15 pF - 7 - - - ns

    VCC = 6.0 V - 7 - 20 23 ns

    tt transition time see Figure 6 [2]

    VCC = 2.0 V - 19 - 95 110 ns

    VCC = 4.5 V - 7 - 19 22 ns

    VCC = 6.0 V - 6 - 16 19 ns

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 6 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    [1] tpd is the same as tPHL and tPLH.

    [2] tt is the same as tTHL and tTLH.

    [3] CPD is used to determine the dynamic power dissipation (PD in W):

    PD = CPD VCC2 fi N + (CL VCC2 fo) where:

    fi = input frequency in MHz;

    fo = output frequency in MHz;

    CL = output load capacitance in pF;

    VCC = supply voltage in V;

    N = number of inputs switching;

    (CL VCC2 fo) = sum of outputs.

    11. Waveforms

    CPD power dissipation

    capacitance

    per package; VI = GND to VCC [3] - 22 - - - pF

    74HCT00

    tpd propagation delay nA, nB to nY; see Figure 6[1]

    VCC = 4.5 V - 12 - 24 29 ns

    VCC = 5.0 V; CL = 15 pF - 10 - - - ns

    tt transition time VCC = 4.5 V; see Figure 6[2] - - - 29 22 ns

    CPD power dissipation

    capacitance

    per package;

    VI = GND to VCC 1.5 V

    [3] - 22 - - - pF

    Table 7. Dynamic characteristics continued

    GND = 0 V; CL = 50 pF; for load circuit seeFigure 7.

    Symbol Parameter Conditions 25 C 40 C to +125 C Unit

    Min Typ Max Max

    (85 C)

    Max

    (125 C)

    Measurement points are given in Table 9.

    VOL and VOH are typical voltage output levels that occur with the output load.

    Fig 6. Input to output propagation delays

    001aai814

    nA, nB input

    VI

    GND

    VOH

    VOL

    nY output

    tTHL tTLH

    VM

    VM

    VX

    VY

    tPHL tPLH

    Table 8. Measurement points

    Type Input Output

    VM VM VX VY

    74HC00 0.5VCC 0.5VCC 0.1VCC 0.9VCC

    74HCT00 1.3 V 1.3 V 0.1VCC 0.9VCC

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 7 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    Test data is given in Table 9.

    Definitions test circuit:

    RT = termination resistance should be equal to output impedance Zo of the pulse generator.

    CL = load capacitance including jig and probe capacitance.

    Fig 7. Load circuitry for measuring switching times

    001aah768

    tW

    tW

    tr

    trtf

    VM

    VI

    negative

    pulse

    GND

    VI

    positive

    pulse

    GND

    10 %

    90 %

    90 %

    10 %

    VM VM

    VM

    tf

    VCC

    DUT

    RT

    VI VO

    CL

    G

    Table 9. Test data

    Type Input Load TestVI tr, tf CL

    74HC00 VCC 6.0 ns 15 pF, 50 pF tPLH, tPHL

    74HCT00 3.0 V 6.0 ns 15 pF, 50 pF tPLH, tPHL

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 8 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    12. Package outline

    Fig 8. Package outline SOT27-1 (DIP14)

    UNIT Amax.

    1 2 (1) (1)b1 c D(1)ZE e MHL

    REFERENCESOUTLINE

    VERSION

    EUROPEAN

    PROJECTIONISSUE DATE

    IEC JEDEC JEITA

    mm

    inches

    DIMENSIONS (inch dimensions are derived from the original mm dimensions)

    SOT27-199-12-27

    03-02-13

    Amin.

    Amax.

    bmax.

    wMEe1

    1.73

    1.13

    0.53

    0.38

    0.36

    0.23

    19.50

    18.55

    6.48

    6.20

    3.60

    3.050.2542.54 7.62

    8.25

    7.80

    10.0

    8.32.24.2 0.51 3.2

    0.068

    0.044

    0.021

    0.015

    0.77

    0.73

    0.014

    0.009

    0.26

    0.24

    0.14

    0.120.010.1 0.3

    0.32

    0.31

    0.39

    0.330.0870.17 0.02 0.13

    050G04 MO-001 SC-501-14

    MH

    c

    (e )1

    ME

    A

    L

    sea

    tingp

    lane

    A1

    w Mb1

    e

    D

    A2

    Z

    14

    1

    8

    7

    b

    E

    pin 1 index

    0 5 10 mm

    scale

    Note

    1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

    DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 9 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    Fig 9. Package outline SOT108-1 (SO14)

    UNITA

    max.A1 A2 A3 bp c D

    (1) E(1) (1)e HE L Lp Q Zywv

    REFERENCESOUTLINE

    VERSION

    EUROPEAN

    PROJECTIONISSUE DATE

    IEC JEDEC JEITA

    mm

    inches

    1.750.25

    0.10

    1.45

    1.250.25

    0.49

    0.36

    0.25

    0.19

    8.75

    8.55

    4.0

    3.81.27

    6.2

    5.8

    0.7

    0.6

    0.7

    0.3 8

    0

    o

    o

    0.25 0.1

    DIMENSIONS (inch dimensions are derived from the original mm dimensions)

    Note

    1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

    1.0

    0.4

    SOT108-1

    X

    w M

    AA1

    A2

    bp

    D

    HE

    Lp

    Q

    detail X

    E

    Z

    e

    c

    L

    v M A

    (A )3

    A

    7

    8

    1

    14

    y

    076E06 MS-012

    pin 1 index

    0.0690.010

    0.004

    0.057

    0.0490.01

    0.019

    0.014

    0.0100

    0.0075

    0.35

    0.34

    0.16

    0.150.05

    1.05

    0.0410.244

    0.228

    0.028

    0.024

    0.028

    0.0120.01

    0.25

    0.01 0.0040.039

    0.016

    99-12-27

    03-02-19

    0 2.5 5 mm

    scale

    SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 10 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    Fig 10. Package outline SOT337-1 (SSOP14)

    UNIT A1 A2 A3 bp c D(1) E (1) e HE L Lp Q Zywv

    REFERENCESOUTLINE

    VERSION

    EUROPEAN

    PROJECTIONISSUE DATE

    IEC JEDEC JEITA

    mm0.21

    0.05

    1.80

    1.650.25

    0.38

    0.25

    0.20

    0.09

    6.4

    6.0

    5.4

    5.20.65 1.25 0.2

    7.9

    7.6

    1.03

    0.63

    0.9

    0.7

    1.4

    0.98

    0

    o

    o0.13 0.1

    DIMENSIONS (mm are the original dimensions)

    Note

    1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

    SOT337-199-12-27

    03-02-19

    (1)

    w Mbp

    D

    HE

    E

    Z

    e

    c

    v M A

    X

    A

    y

    1 7

    14 8

    AA1

    A2

    Lp

    Q

    detail X

    L

    (A )3

    MO-150

    pin 1 index

    0 2.5 5 mm

    scale

    SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1

    A

    max.

    2

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 11 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    Fig 11. Package outline SOT402-1 (TSSOP14)

    UNIT A1 A2 A3 bp c D(1) E (2) (1)e HE L Lp Q Zywv

    REFERENCESOUTLINE

    VERSION

    EUROPEAN

    PROJECTIONISSUE DATE

    IEC JEDEC JEITA

    mm0.15

    0.05

    0.95

    0.80

    0.30

    0.19

    0.2

    0.1

    5.1

    4.9

    4.5

    4.30.65

    6.6

    6.2

    0.4

    0.3

    0.72

    0.388

    0

    o

    o0.13 0.10.21

    DIMENSIONS (mm are the original dimensions)

    Notes

    1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

    2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.

    0.75

    0.50

    SOT402-1 MO-15399-12-27

    03-02-18

    w Mbp

    D

    Z

    e

    0.25

    1 7

    14 8

    AA1

    A2

    Lp

    Q

    detail X

    L

    (A )3

    HE

    E

    c

    v M A

    XA

    y

    0 2.5 5 mm

    scale

    TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1

    A

    max.

    1.1

    pin 1 index

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 12 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    Fig 12. Package outline SOT762-1 (DHVQFN14)

    terminal 1

    index area

    0.51

    A1 EhbUNIT ye

    0.2

    c

    REFERENCESOUTLINE

    VERSION

    EUROPEAN

    PROJECTIONISSUE DATE

    IEC JEDEC JEITA

    mm3.1

    2.9

    Dh

    1.65

    1.35

    y1

    2.6

    2.4

    1.15

    0.85

    e1

    20.30

    0.18

    0.05

    0.000.05 0.1

    DIMENSIONS (mm are the original dimensions)

    SOT762-1 MO-241 - - -- - -

    0.5

    0.3

    L

    0.1

    v

    0.05

    w

    0 2.5 5 mm

    scale

    SOT762-1DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;

    14 terminals; body 2.5 x 3 x 0.85 mm

    A(1)

    max.

    AA1

    c

    detail X

    yy1 Ce

    L

    Eh

    Dh

    e

    e1

    b

    2 6

    13 9

    8

    71

    14

    X

    D

    E

    C

    B A

    02-10-17

    03-01-27

    terminal 1

    index area

    AC

    C

    Bv M

    w M

    E(1)

    Note

    1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.

    D(1)

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 13 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    13. Abbreviations

    14. Revision history

    Table 10. Abbreviations

    Acronym Description

    CMOS Complementary Metal-Oxide Semiconductor

    DUT Device Under Test

    ESD ElectroStatic Discharge

    HBM Human Body Model

    LSTTL Low-power Schottky Transistor-Transistor Logic

    MM Machine Model

    TTL Transistor-Transistor Logic

    Table 11. Revision history

    Document ID Release date Data sheet status Change notice Supersedes

    74HC_HCT00 v.5 20101125 Product data sheet - 74HC_HCT00 v.4

    Modifications: Figure note [1] of Figure 5: changed.

    74HC_HCT00 v.4 20100111 Product data sheet - 74HC_HCT00 v.3

    74HC_HCT00 v.3 20030630 Product data sheet - 74HC_HCT00_CNV v.2

    74HC_HCT00_CNV v.2 19970826 Product specification - -

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 14 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    15. Legal information

    15.1 Data sheet status

    [1] Please consult the most recently issued document before initiating or completing a design.

    [2] The term short data sheet is explained in section Definitions.

    [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at URL http://www.nxp.com.

    15.2 DefinitionsDraft The document is a draft version only. The content is still under

    internal review and subject to formal approval, which may result in

    modifications or additions. NXP Semiconductors does not give any

    representations or warranties as to the accuracy or completeness of

    information included herein and shall have no liability for the consequences of

    use of such information.

    Short data sheet A short data sheet is an extract from a full data sheet

    with the same product type number(s) and title. A short data sheet is intended

    for quick reference only and should not be relied upon to contain detailed and

    full information. For detailed and full information see the relevant full data

    sheet, which is available on request via the local NXP Semiconductors sales

    office. In case of any inconsistency or conflict with the short data sheet, the

    full data sheet shall prevail.

    Product specification The information and data provided in a Product

    data sheet shall define the specification of the product as agreed between

    NXP Semiconductors and its customer, unless NXP Semiconductors and

    customer have explicitly agreed otherwise in writing. In no event however,

    shall an agreement be valid in which the NXP Semiconductors product is

    deemed to offer functions and qualities beyond those described in the

    Product data sheet.

    15.3 Disclaimers

    Limited warranty and liability Information in this document is believed to

    be accurate and reliable. However, NXP Semiconductors does not give any

    representations or warranties, expressed or implied, as to the accuracy or

    completeness of such information and shall have no liability for the

    consequences of use of such information.

    In no event shall NXP Semiconductors be liable for any indirect, incidental,

    punitive, special or consequential damages (inc luding - without limitation - lost

    profits, lost savings, business interruption, costs related to the removal or

    replacement of any products or rework charges) whether or not such

    damages are based on tort (including negligence), warranty, breach of

    contract or any other legal theory.

    Notwithstanding any damages that customer might incur for any reason

    whatsoever, NXP Semiconductors aggregate and cumulative liability towards

    customer for the products described herein shall be limited in accordance

    with the Terms and conditions of commercial saleof NXP Semiconductors.

    Right to make changes NXP Semiconductors reserves the right to make

    changes to information published in this document, including without

    limitation specifications and product descriptions, at any time and without

    notice. This document supersedes and replaces all information supplied prior

    to the publication hereof.

    Suitability for use in automotive applications This NXP

    Semiconductors product has been qualified for use in automotiveapplications. The product is not designed, authorized or warranted to be

    suitable for use in medical, military, aircraft, space or life support equipment,

    nor in applications where failure or malfunction of an NXP Semiconductors

    product can reasonably be expected to result in personal injury, death or

    severe property or environmental damage. NXP Semiconductors accepts no

    liability for inclusion and/or use of NXP Semiconductors products in such

    equipment or applications and therefore such inclusion and/or use is at the

    customers own risk.

    Applications Applications that are described herein for any of these

    products are for illustrative purposes only. NXP Semiconductors makes no

    representation or warranty that such applications will be suitable for the

    specified use without further testing or modification.

    Customers are responsible for the design and operation of their applications

    and products using NXP Semiconductors products, and NXP Semiconductors

    accepts no liability for any assistance with applications or customer product

    design. It is customers sole responsibility to determine whether the NXP

    Semiconductors product is suitable and fit for the customers applications and

    products planned, as well as for the planned application and use ofcustomers third party customer(s). Customers should provide appropriate

    design and operating safeguards to minimize the risks associated with their

    applications and products.

    NXP Semiconductors does not accept any liability related to any default,

    damage, costs or problem which is based on any weakness or default in the

    customers applications or products, or the application or use by customers

    third party customer(s). Customer is responsible for doing all necessary

    testing for the customers applications and products using NXP

    Semiconductors products in order to avoid a default of the applications and

    the products or of the application or use by customers third party

    customer(s). NXP does not accept any liability in this respect.

    Limiting values Stress above one or more limiting values (as defined in

    the Absolute Maximum Ratings System of IEC 60134) will cause permanent

    damage to the device. Limiting values are stress ratings only and (proper)

    operation of the device at these or any other conditions above those given in

    the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or

    repeated exposure to limiting values will permanently and irreversibly affect

    the quality and reliability of the device.

    Terms and conditions of commercial sale NXP Semiconductors

    products are sold subject to the general terms and conditions of commercial

    sale, as published at http://www.nxp.com/profile/terms, unless otherwise

    agreed in a valid written individual agreement. In case an individual

    agreement is concluded only the terms and conditions of the respective

    agreement shall apply. NXP Semiconductors hereby expressly objects to

    applying the customers general terms and conditions with regard to the

    purchase of NXP Semiconductors products by customer.

    No offer to sell or license Nothing in this document may be interpreted or

    construed as an offer to sell products that is open for acceptance or the grant,

    conveyance or implication of any license under any copyrights, patents or

    other industrial or intellectual property rights.

    Document status[1][2] Product status[3] Definition

    Objective [short ] data sheet Development This document contains data from the object ive specification for product development.

    Preliminary [short ] data sheet Quali fication This document contains data from the preliminary specification.

    Product [short] data sheet Production This document contains the product specification.

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    74HC_HCT00 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

    Product data sheet Rev. 5 25 November 2010 15 of 16

    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    Export control This document as well as the item(s) described herein

    may be subject to export control regulations. Export might require a prior

    authorization from national authorities.

    15.4 Trademarks

    Notice: All referenced brands, product names, service names and trademarks

    are the property of their respective owners.

    16. Contact information

    For more information, please visit: http://www.nxp.com

    For sales office addresses, please send an email to: [email protected]

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    NXP Semiconductors 74HC00; 74HCT00Quad 2-input NAND gate

    NXP B.V. 2010. All rights reserved.For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]

    Date of release: 25 November 2010

    Document identifier: 74HC_HCT00

    Please be aware that important notices concerning this document and the product(s)described herein, have been included in section Legal information.

    17. Contents

    1 General description. . . . . . . . . . . . . . . . . . . . . . 1

    2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

    3 Ordering information. . . . . . . . . . . . . . . . . . . . . 1

    4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

    5 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

    5.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

    5.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2

    6 Functional description . . . . . . . . . . . . . . . . . . . 3

    7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

    8 Recommended operating conditions. . . . . . . . 4

    9 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

    10 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5

    11 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

    12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

    13 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13

    14 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

    15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

    15.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

    15.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

    15.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

    15.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

    16 Contact information. . . . . . . . . . . . . . . . . . . . . 15

    17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16