Current Photovoltaic Research 4(4) 150-154 (2016) pISSN 2288-3274 DOI:https://doi.org/10.21218/CPR.2016.4.4.150 eISSN 2508-125X RF 마그네트론 스퍼터를 이용하여 제작한 MIZO 박막의 특성에 미치는 기판 온도의 영향 전기석 1,2) ㆍ지홍섭 1) ㆍ임상우 2) ㆍ정채환 1) * 1) 한국생산기술연구원 광에너지융합그룹, 광주광역시, 61012 2) 연세대학교 화공생명공학과, 서울특별시, 03722 Characteristics of the Mg and In co-doped ZnO Thin Films wit h Various Substrate Temperatures Kiseok Jeon 1,2) ․ Hongsub Jee 1) ․ Sangwoo Lim 2) ․ Chaehwan Jeong 1) * 1) Solar Cell R&D Center, Applied Optics & Energy R&D Group, Korea Institute of Industrial Technology, Gwangju 61012, Korea 2) Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Korea ABSTRACT: Mg and In co-doped ZnO (MIZO) thin films with transparent conducting characteristics were successfully prepared on glass substrates by RF magnetron sputtering technique. The Influence of different substrate temperature (from RT to 400°C) on the structural, morphological, electrical, and optical properties of MIZO thin films were investigated. The MIZO thin film prepared at the substrate temperature of 350°C showed the best electrical characteristics in terms of the carrier concentration (4.24×10 20 cm -3 ), charge carrier mobility (5.01 cm 2 V -1 S -1 ), and a minimum resistivity (1.24×10 -4 Ω ․ cm). The average transmission of MIZO thin films in the visible range was over 80% and the absorption edges of MIZO thin films were very sharp. The bandgap energy of MIZO thin films becomes wider from 3.44 eV to 3.6 eV as the substrate temperature increased from RT to 350°C. However, Band gap energy of MIZO thin film was narrow at substrate temperature of 400°C. Key words: ZnO-based thin films, transparent conducting oxide (TCO), RF magnetron sputtering technique, Mg and In co-doping *Corresponding author: [email protected]Received November 21, 2016; Revised November 21, 2016; Accepted November 23, 2016 ⓒ 2016 by Korea Photovoltaic Society This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Nomenclature cm : centimeter (10 -2 m) nm : nanometer (10 -9 m) pm : picometer (10 -12 m) V : voltage u : carrier mobility (cm 2 /V ․ s) n : carrier density (cm -3 ) ρ : resistivity (Ω ․ cm) subscript MIZO : magnesium and indium co-doped zinc-oxide TCO : transparent conducting oxide ITO : indium tin oxide 1. 서 론 Transparent conductive oxides (TCO) 는 낮은 전기 비저항을 가지면서 높은 광 투과율을 보이는 독특한 특성을 가지고 있다. TCO는 이러한 특성 때문에 solar cell, flat panel display등 다양 한 광·전자 소자 분야에 응용되고 있다 1,2) . TCO 물질로써는 Indium tin oxide (ITO) 가 널리 사용되고 있으나 , In의 매장량이 많지 않아 가격이 고가이고, 수소 플라즈마 분위기에서 열적, 화 학적으로 불안정한 특성을 나타내어 ITO를 대체할 수 있는 물질 의 개발에 대한 필요성이 대두되고 있다 3) . 현재 ITO를 대체할 가 장 유망한 물질로 ZnO가 널리 알려져 있다. ZnO는 매장량이 풍 부하여 가격이 저렴하고, 열복사에 대하여 높은 저항력을 가지 고 있다 4) . 하지만 순수한 ZnO는 ~10 18 cm -3 의 낮은 전송자와 10 -2 Ω ․ cm의 비저항 , 3.3 eV의 밴드갭을 가지고 있어 고성능 광소자 물질로는 부적합하다 5) . 이러한 ZnO의 광학적, 전기적 특성의 단점을 개선하기 위해 Mg과 3족 원소 (Al, Ga, In)를 도핑한 박막 150
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Characteristics of the Mg and In co-doped ZnO Thin Films with … However, Band gap energy of MIZO thin film was narrow at substrate temperature of 400°C. Key words: ZnO-based thin
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Current Photovoltaic Research 4(4) 150-154 (2016) pISSN 2288-3274