CHAPTER 4 EFFECT OF ALKALINE EARTH METAL AND TRANSITION METAL DOPANTS ON THE STRUCTURAL, OPTICAL AND ELECTRONIC PROPERTIES OF YTTRIUM STABILIZED ZIRCONIA NANOPARTICLES 4.1 INTRODUCTION The tetragonal and cubic phases could exist when doped with alkaline earth metal oxides (MgO, CaO, etc.) or by transition metal oxides (Y 2 O 3 , etc.) or by rare earth metal oxides (CeO 2 , etc.) at room temperature (Bechepeche et al. 1999). According to Iwasaki et al. (1992), the mechanical strength of stabilized zirconia is improved without lowering the ion conductivity by providing a solid electrolyte comprising stabilized zirconia and a metal oxide dispersed within grains or grain boundaries of stabilized zirconia. Stabilization of zirconia in particular phase is recognized as the stabilized zirconia. It can be obtained by addition of about 5-10 mol%, particularly about 8 mol% of a stabilizer such as yttrium, cerium, calcium or magnesium. With the stabilized zirconia, the first group metal oxide can be added which do not generally form solid solution with the host and the second group metal oxide that forms the solid solution can also be added as well
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CHAPTER 4
EFFECT OF ALKALINE EARTH METAL AND TRANSITION
METAL DOPANTS ON THE STRUCTURAL, OPTICAL AND
ELECTRONIC PROPERTIES OF YTTRIUM STABILIZED
ZIRCONIA NANOPARTICLES
4.1 INTRODUCTION
The tetragonal and cubic phases could exist when doped with
alkaline earth metal oxides (MgO, CaO, etc.) or by transition metal oxides
(Y2O3, etc.) or by rare earth metal oxides (CeO2, etc.) at room temperature
(Bechepeche et al. 1999). According to Iwasaki et al. (1992), the mechanical
strength of stabilized zirconia is improved without lowering the ion
conductivity by providing a solid electrolyte comprising stabilized zirconia
and a metal oxide dispersed within grains or grain boundaries of stabilized
zirconia. Stabilization of zirconia in particular phase is recognized as the
stabilized zirconia. It can be obtained by addition of about 5-10 mol%,
particularly about 8 mol% of a stabilizer such as yttrium, cerium, calcium or
magnesium. With the stabilized zirconia, the first group metal oxide can be
added which do not generally form solid solution with the host and the second
group metal oxide that forms the solid solution can also be added as well
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without changing their physical properties and chemical stability. For
example, alumina, chromia and mullite can be easily added to stabilized
zirconia which forms as a composite oxide and a second group metal oxide
such as magnesia, barium oxide and calcia could form solid solution with
stabilized zirconia. When the second group oxide is used as the dopant, the
metal oxide may be in the form of separate grains which are dispersed within
the stabilized zirconia grains depending upon the preparation conditions.
Nevertheless, such a metal oxide may be partially solid dissolved, particularly
around the stabilized zirconia grains. The limitation of the metal oxide in
mol% in the stabilized zirconia is preferably up to about 30%, more preferably
0.01 to 20% and specifically 0.1 to 5% (Iwasaki et al. 1992). Addition of a
lower concentration of metal oxide improves the strength of the stabilized
zirconia whereas a greater concentration of metal oxide in stabilized zirconia
lowers the ionic conductivity significantly.
Manganese ion stabilizes zirconia in the cubic phase and moreover
it delays the cubic to tetragonal (c�t) phase transformation responsible for
slow conductivity decay (>1000 h) even at high temperature of about 850–
1000° C (Herle and Vasquez 2004). Theoretical (Ostanin et al. 2007, Jia et al.
2009) and experimental research (Clavel et al. 2008, Yu et al. 2008, Zippel et
al. 2010, Srivastava et al. 2011) in Mn doped YSZ is however limited and is
mostly oriented in exploiting the magnetic properties especially room
temperature ferromagnetism for spintronics application. For Mn-stabilized
zirconia special magnetic properties were recently predicted depending on the
number of oxygen vacancies (Ostanin et al. 2007). Cu/ZrO2 materials were
proposed by Velu et al. (2000), Liu et al. (2002), Matter et al. (2004) and
Fisher et al. (1999) as catalysts in the process of oxidative steam reforming of
methanol. However, to the best of the author knowledge there are no reports
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available analyzing the effect of these transition metal ions with yttria
stabilized zirconia. Here, in the present study it is believed that the well
stabilized cubic YSZ can be formed by adding these dopants.
Ni doped YSZ is widely used as anode material in SOFC (Park et
al., 2011). A number of researchers have addressed the interaction of YSZ
with small additions of NiO, most of the research work has been focused on
phase stabilization (Kondo et al., 2003), aging (Mori et al. 2003) and electrical
properties (Kondo et al. 2003, Linderoth et al. 2001, Herle and Vasquez 2004).
It has been reported by Kondo et al. (2003) that addition of nickel enhances
the ionic conductivity of zirconia. Moreover, Herle and Vasquez (2004) have
proved that lower concentration of NiO is advantageous as it can significantly
reduce the sintering temperature.
ZnO is well known not only as a semiconductor but also as a
probable oxygen-ion conductor due to enrichment of oxygen vacancies at
higher temperature. It has been reported that ZnO could be used as an effective
sintering aid and an optimal scavenger for grain boundary in yttria-stabilized
zirconia. Small addition of ZnO is found to be effective in reducing the
sintering temperature and promoting the densification rate of the ceramics.
The 5.0 wt% ZnO-doped YSZ has ~96% relative density, as compared to
~89% relative density for the undoped sample. The total conductivity of 8YSZ
was evidently increased by doping small amount of ZnO. At intermediate
temperature (~300° C), the maximum enhancement of grain boundary
conductivity was observed with 5.0 wt% ZnO dopant (Liu and Lao 2006). In
this case also there are no more related reports available. Here, in the present
study the 5 mol% Zn has been used to stabilize the cubic phase of YSZ.
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For SOFC application it is important to stabilize the cubic structure,
in particularly, at nanoscale. In recent years, research has been directed
towards stabilized nano-zirconia at room temperature by various dopants
inorder to obtain phase stability over time as well as to improve the ionic
conductivity by increasing the oxygen vacancies. This demands a clear
understanding of the influence of various dopants on the structural and
electronic band structure of the stabilized zirconia specifically at nanoscale as
their properties are entirely different from the bulk counter-part. However
there is lack of research directed on such concept of material science which
will pay way for better understanding of the factors that impulse the phase
stabilization and ionic conductivity. This chapter clearly depicts the influence
of various dopants on the structural, optical and electronic properties of yttria
stabilized zirconia and effective stabilization of cubic phase at room
temperature by alkali earth metal oxide and transition metal oxide dopants.
4.2 EXPERIMENTAL SYNTHESIS
AR grade Zirconium oxychloride (Himedia) and Yttrium nitrate
(Himedia) were used as the precursor. The precursors used for the doping
were AR grade Barium nitrate (Merck), Magnesium nitrate (Merck),
Figure 4.4 Extended view of high intensity (111) plane in the XRD patterns of (a) YSZ (b) Mn-YSZ (c) Ni-YSZ (d) Cu-YSZ and (e) Zn-YSZ calcined at 700˚C for 2 h
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For the 5 mol% transition metal doped YSZ all the diffraction
peaks could be indexed to cubic symmetry with a peak shift to higher 2�
values. The XRD patterns of YSZ doped with 5 mol% of transition metal
oxide shows better crystallinity compared to alkali earth metal doped YSZ
when calcined for shorter time of 2 h. The Ni-YSZ shows better crystallinity
compared to other samples. The crystallite size and crystallinity of the material
depends on the dopant added.
The peak broadening observed is due to the non uniform strain
which confirms the presence of nanometric YSZ. It can be noted that the phase
formed is predominantly cubic due to incorporation of dopants. Moreover, the
diffraction planes of the cubic and tetragonal phase are almost nearer to each
other and hence clear determination of diffraction planes in the case of broader
peaks are difficult. Therefore, it cannot be suggested that the material is purely
cubic. It may be a combination of cubic and tetragonal phases (pseudocubic
phase). This is clearly shown in Figure 4.3 where the standard JCPDS data 89-
9069 and 79-1769 for cubic (red lines) and tetragonal (black lines) phase
respectively are given for comparison with the experimental data.
The intensity of the diffraction peak decreases with increasing
vacancy concentrations which are consistent with the PL results. The (111)
peak broadens with increasing stacking fault and the location of the (111) peak
is shifted to higher angles. In the extremely small crystals, the greatest shift
occurs when the stacking fault is located in the center of the cube (Makinson
et al. 2000). The lattice constant of stabilized ZrO2 varies depending on the
amount and the nature of the stabilizing element (Schubert et al. 2009). As the
particle size is very small the fraction of atoms in the surface layer is large and
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these atoms are less strongly bonded to their neighbours than atoms in the
bulk. As a result, the unit-cell dimensions at the surface are larger than in the
core. The unit-cell parameters are an average measurement, based on the
average interatomic distances. Thus, smaller particle size leads to larger
average interatomic distances and hence the unit-cell parameter would be
larger compared to the bulk.
According to Esposito et al. (2011), the structural properties depend
markedly on the precursor and on the synthesis procedure. Esposito et al.
(2010) has proposed the concept of crystallization delay in the Cu doped
Zirconia. This is caused by the incorporation of dopant metal ions into the
ZrO2 lattice i.e. they occupy the position of Zr4+ ions. Based on their
assumption, the same hypothesis was followed in the present case. With the
ionic radius of the dopant the variation in lattice parameter was observed as
summarized in the Table 4.1.
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Table 4.1 Variation of lattice parameters of zirconia with respect to various metal ion dopants
Sample name Mean Crystallite
size D (nm)
Strain x 10-4
Dislocation density
x 1015 lines/m2
Lattice constant
a (Å)
Volume V
(Å3)
c-ZrO2 JCPDS 89-9069
- - - 5.135 135.40
c-ZrO2 Tsunekawa et al., (2003)
bulk - - 5.07 130.32
c-ZrO2 Manna et al., (2010)
~11 - - 5.1215 134.34
8YSZ 18.29 32.21 2.99 5.1043 132.99
Mg-YSZ (700˚C, 2 h)
8.22 71.87 14.77 5.1174 134.01
Mg-YSZ (700˚C, 8 h)
18.56 31.76 2.90 5.1075 133.23
Ba-YSZ
(700˚C, 2 h)
8.20 75.26 14.86 5.1229 134.45
Ba-YSZ
(700˚C, 8 h)
18.53 31.82 2.91 5.1109 133.51
Mn-YSZ (700˚C, 2 h)
10.29 57.10 9.44 5.0912 131.96
Ni-YSZ
(700˚C, 2 h)
17.89 32.86 3.12 5.0925 132.06
Cu-YSZ
(700˚C, 2 h)
8.23 71.62 14.86 5.1045 133.00
Zn-YSZ
(700˚C, 2 h)
7.84 75.20 16.28 5.1050 133.05
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The lowering of the lattice parameters values of the samples
compared to those of pure zirconia were an unquestionable proof of the dopant
ion–zirconium replacement. The decrease in unit cell parameters of cubic
phase is supported by the shift in 2� to higher values. The ionic radii of Mn2+,
Ni2+, Cu2+ and Zn2+ are 67, 44, 57 and 60 pm which are smaller than that of
Zr4+ with ionic radii 84 pm (Shannon 1974). Therefore substitution of
transition metal dopant ion into zirconia lattice leads to lattice volume
shrinkage. The metal ions used as dopants are generally of smaller size and
lower valence (than Zr4+ ions) that may result in a decrease in the unit cell
volume and generation of positive holes with lattice defects (oxygen
vacancies).
The typical FTIR spectra of alkali earth metal and transition metal
doped Yttria stabilized Zirconia are shown in Figure 4.5 and Figure 4.6
respectively which are considered as the finger print of the material. The broad
peak exhibited in the FTIR Spectra in the range 3000 – 3800 cm-1 corresponds
to the stretching vibration of physically adsorbed –OH with the metal ion on
the surface (Truffault et al. 2010). The band located around 1400 cm-1 and
1625 cm-1 represents bending vibration of water molecules (Phoka et al. 2009,
Truffault et al. 2010, Wang et al. 2012). The peak centered around 2340 –
2350 cm-1 can be attributed to the coupling effect of stretching and bending
vibration of –OH groups (Sarkar et al. 2007). The stretching frequency of
metal-oxygen (M-O) band is found below 600 cm-1. It has been predicted by
Srinivasan et al. (2010) that the M-O absorption bands become broader in the
FTIR spectra as the particle size decreases due the enhanced surface effects.
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Figure 4.5 FTIR spectra of (a) Mg-YSZ and (b) Ba-YSZ calcined at
700˚C for 8 h
Figure 4.6 FTIR spectra of (a) Mn-YSZ (b) Ni-YSZ (c) Cu-YSZ and (d)
Zn-YSZ calcined at 700˚C for 2 h
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4.3.2 Optical and Electronic Properties
Figure 4.7 and 4.8 shows the diffuse reflectance spectra of alkali
earth metal ion doped yttrium stabilized zirconia and transition metal ion
doped yttrium stabilized zirconia respectively. The energy band gap is
determined from UV Diffuse reflectance data by transforming it into a
function of reflectance as proposed by Kubelka-Munk. The Kubelka-Munk
plot for determining band gap energy is shown is Figure 4.9 and 4.10 for the
alkali earth metal doped yttrium stabilized zirconia and transition metal doped
yttrium stabilized zirconia respectively. KM plot is plotted with the nth power
of product of function of reflectance F(R) and photonic energy (Eg = h)
against the photonic energy. Since Zirconia is considered as a direct band gap
semiconductor the value of n is taken as 2 for allowed transitions (Joy et al.,
2012). The energy band gap is found out by extrapolating the linear portion of
the graph to the X-axis.
The formation of defects, such as oxygen vacancies, lead to
reflectance at lower energies due to the presence of donor levels located inside
the forbidden band (Manna et al. 2010). The oxygen vacancies in ZrO2
crystals can induce the formation of new energy levels in the band gap region.
The observed red-shift of the cut-off wavelength could be due to oxygen
vacancy that is in fact responsible for lowering the band gap energy. Among
all the transition metal doped YSZ, Mn-YSZ shows poor reflectance which is
due to the lower optical features of Mn by nature. Comparing the band gap
energy of the metal ion doped YSZ tabulated in Table 4.2, Ba-YSZ and Zn-
YSZ show comparatively high energy band gap which is due to quantum
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confinement effect as supported by the PL results and smaller nanosize of the
crystallites as deduced from the XRD results.
Figure 4.7 Diffuse Reflectance Spectra of (a) Mg-YSZ and (b) Ba-YSZ