1 1 Ch9 Etching Introduction to Semiconductor Processing 2 蝕刻 (Etching) 表面物質去除化的製程: 化學蝕刻、物理蝕刻、複合蝕刻 選擇性蝕刻或整面全區蝕刻 選擇性蝕刻將 IC光阻上的設計圖形轉移至晶圓表面層 Major Concern: Rate, selectivity, and uniformity 光阻 光阻 薄膜 基片 基片 非等向性 光阻 薄膜 光阻 等向性 薄膜 光阻 薄膜 基片 光阻 蝕刻
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Microsoft PowerPoint - Ch9_Etching.ppt
4
t Etching Rate =
PE-TEOS PSG 6000 Å/min, 30 Å/min, PSG
60006000 ----------------------------------
6
10
: 80% 5% 5% 10 %
H2O2 TiO2
12
7
13
Etching Rate for KOH etching of Si: (100):(110):(111)=100:16:1
8
15
Time
4F + SiO2 → SiF4 +2O
14
27
CN, N or O P, O, and F O, Al and F O, Al and F
Etched Layers
Reductions of the ions and neutrals to the feature bottom
30
Challenges – Etching Profiles Non-Ideality
Trenching Trenching Bowing Notching
F. F. Chen and J. P. Chang, “Principles of Plasma Processing: A Lecture Course”
16
31
100µm
32
4
t Etching Rate =
PE-TEOS PSG 6000 Å/min, 30 Å/min, PSG
60006000 ----------------------------------
6
10
: 80% 5% 5% 10 %
H2O2 TiO2
12
7
13
Etching Rate for KOH etching of Si: (100):(110):(111)=100:16:1
8
15
Time
4F + SiO2 → SiF4 +2O
14
27
CN, N or O P, O, and F O, Al and F O, Al and F
Etched Layers
Reductions of the ions and neutrals to the feature bottom
30
Challenges – Etching Profiles Non-Ideality
Trenching Trenching Bowing Notching
F. F. Chen and J. P. Chang, “Principles of Plasma Processing: A Lecture Course”
16
31
100µm
32
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