Ceramic Artificial Ferrites Prepared by Laser Ablation Prof. Carmine Vittoria, Northeastern University, DMR- 0226544 We have shown from previous work that our growth or synthesis procedure which we refer to as “artificial growth technique” is capable of producing epitaxial single crystal films of spinel ferrite. The remarkable feature of this technique is that it affects the distribution of ions without distorting the intrinsic crystal structure of garnet and spinel ferrites. We have now entered a new phase of the research. We have introduced impurity of magnetic ions at the atomic scale into well known semiconductor materials without distorting the crystal structure of the host semiconductor material. This means that the material behaves both as semiconductor as well as magnetic ordered material, see for example hysteresis curve of semiconductor ZnO doped with Fe 2 O 3 (~ 2 %). These type of materials will serve as the next generation of materials needed for integrated circuit (IC) chips, sensors, electronic devices, recording, FMR at X-band at 300K H // Film Plane ZnO doped by Fe 2 O 3, H//Film plane at 300 K