cnse.albany.edu Carbon Contamination of Extreme Ultraviolet (EUV) Masks and its Effect on Imaging Yu-Jen Fan, Leonid Yankulin, Greg Denbeaux, Yunfei Wang, Robert Geer College of Nanoscale Science & Engineering, University at Albany Andrea Wüest, Frank Goodwin, Sungmin Huh SEMATECH Albany Patrick Naulleau, Kenneth Goldberg, Iacopo Mochi CXRO, Lawrence Berkeley National Laboratory This work was funded by SEMATECH & INVENT
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cnse.albany.edu
Carbon Contamination of Extreme Ultraviolet (EUV) Masks and its Effect on Imaging
Yu-Jen Fan, Leonid Yankulin, Greg Denbeaux, Yunfei Wang, Robert GeerCollege of Nanoscale Science & Engineering, University at Albany
Andrea Wüest, Frank Goodwin, Sungmin HuhSEMATECH Albany
Patrick Naulleau, Kenneth Goldberg, Iacopo MochiCXRO, Lawrence Berkeley National Laboratory
This work was funded by SEMATECH & INVENT
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Outline
System and background
Characterization
MET Printed images & reflectivity measurement
AIT Aerial images in terms of process window & contrast
AFM Surface roughness analysis
Simulation Estimation of topography & limitation of carbon thickness
Conclusion
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EUV MiMICS (Microscope for Mask Imaging and Contamination Study)
XYZ stage to hold 6” mask and covers full travel range, with height adjustment
Automated load-lock for mask loading
Air table for vibration reduction with 3 point height adjustment
Best pressure of 1*10-7 Torr
EUV Source
Mask
Multilayer Mirror
SiZr Filter
Designed aperture
Carbon containing gas
G. Denbeaux, et al., “Accelerated contamination testing of EUV masks.” Proc. SPIE 2008Y.J Fan, et al., “Effect of carbon contamination of EUV masks on imaging.” EUVL Symposium 2008
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Mask Inspection
Reticle SEM was used to inspect the mask before and after the contamination
Observed larger CD after contamination on the mask
Contaminated with designed aperture
1mm
Carbon contamination
Before contamination
CD=152.6±1.3 nm
100nm
CD=176.6±1.7 nm
100nm
After contamination
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Image Printed using Microfield Exposure Tool
More contamination larger shadowing effect CD error
More contamination larger CD require more dose lower throughput
25
30
35
40
45
50
55
5 10 15 20
Dose (mJ/cm^2)
CD
(nm
)
Non-contaminated_H
Non-contaminated_V
Contaminated_H
Contaminated_V
~1.7nm H-V bias ~2nm H-V bias
SEMATECH Berkeley MET
P. Naulleau et al., “Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic,” Proc. SPIE 5374, pp. 881–891, 2004
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Aerial Image Analysis using ThroughFocus Software
Contaminated region shows worse process window and contrast