HF and UHF RFID products with embedded FRAM Page 1 of 4 Fujitsu offers HF and UHF RFID products with embedded FRAM (Ferroelectric Random Access Memory) based on Fujitsu's cutting-edge technologies. Compared to conventional E 2 PROM/Flash based RFID chips, the FerVID Family enables the same high speed data transfer rate for both reading and writing over long distances. The write endurance, specified to 10 billion cycles, is far higher than that of conventional RFID tags, thus saving cost and time in applications. The products are ISO/IEC15693, ISO/IEC 18000-3 or EPCglobal Class 1 Generation 2 compliant. Fujitsu offers wafers, sawn wafers or packaged chips. Derivatives with combined contactless and contact based SPI interface are available. Applications Fujitsu’s RFID products with 256 Bytes to 4KBytes of FRAM, are ideally suited to many applications and markets including: I Logistics, supply chain management I Passenger tickets, subscription cards I Factory Automation I Access control I Medical and Food Industry applications I Sensor and Data logging I Maintenance tracking What is FRAM? FRAM (ferroelectric random access memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, FRAM features high speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal for use in RFID products, where high security and low power consumption are important. What is Ferroelectric material? PZT (Pb (ZrTi)O3) material which has a perovskite-type structure (ABO3), is commonly used as a typical ferroelectric material. When an electric field is applied the Zr/Ti atom shifts up or down, and this polarisation remains when the electric field is removed. It is this property that provides non-volatility and keeps the power required for data storage very low. Fujitsu is a pioneer in this innovative technology. With more than 10 years ofexperience in developing and manufacturing FRAM products, it has now shipped more than 300 million FRAM devices. The industry is embracing it as a mature technology. Fujitsu Semiconductor Europe Factsheet FerVID RFID products
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based RFID chips, the FerVID Family enablesthe same high speed data transfer rate for
both reading and writing over long distances.
The write endurance, specified to 10 billion
cycles, is far higher than that of conventional
RFID tags, thus saving cost and time in
applications. The products are ISO/IEC15693,
ISO/IEC 18000-3 or EPCglobal Class 1
Generation 2 compliant. Fujitsu offers wafers,
sawn wafers or packaged chips. Derivatives
with combined contactless and contact based
SPI interface are available.
ApplicationsFujitsu’s RFID products with 256 Bytes to
4KBytes of FRAM, are ideally suited to many
applications and markets including:I Logistics, supply chain managementI Passenger tickets, subscription cardsI Factory AutomationI Access controlI Medical and Food Industry applicationsI Sensor and Data loggingI Maintenance tracking
What is FRAM?
FRAM (ferroelectric random access memory) isa non-volatile memory that uses ferroelectric
film as a capacitor for storing data. Possessing
characteristics of both ROM and RAM devices,
FRAM features high speed access, high
endurance in write mode, low power
consumption, non-volatility, and excellent
tamper resistance. It is therefore ideal for use
in RFID products, where high security and low
power consumption are important.
What is Ferroelectric material?
PZT (Pb (ZrTi)O3) material which has aperovskite-type structure (ABO3), is commonly
used as a typical ferroelectric material. When
an electric field is applied the Zr/Ti atom shiftsup or down, and this polarisation remains
Factsheet Fujitsu Semiconductor FerVID RFID products
Page 2 of 4
FRAM and RFID – Key features
RangeLow power consumption can improve the
operating range.
The power delivered to the load must provide
certain threshold voltage and power for the
circuits to function. Because of the low power
consumption nature of FRAM, the operating
range could be improved within given field
strength or power density.
Speed and High Capacity
FRAM memories can be written as fast as theycan be read out. I.e. FRAM write access is
about 25 times faster than E2PROM write
access. Furthermore, the high speed access
and low power consumption allows the design
of high capacity RFID chips.
Almost unlimited read-write times
With read-write endurance of 1E10, FRAM is
more durable and suitable for applications,
which requires frequent write. This is an
important feature for RFID based production
line control, where tags shall be reused many
times.
(Reader/Writer)MCU FRAMSPI
RF
(PCB)
Gamma Radiation Hardness
Unlike E2PROM, Ferroelectric Memories do not
lose their content due to radiation exposure.Therefore FRAM based RFID tags are ideally
suited for medical applications or applications
in the food industry where sterilization is
performed by irradiation. FRAM data is
protected against up to 50kGy gamma ray
sterilization
Dual Interface
The device MB97R803A is available in two
different types. A conventional contactless
EPCglobal RFID product and a derivative with
an additional contact based SPI interface. Thisdual interface type can be implemented as
part of a Microcontroller based embedded
system. Data, captured by sensors and the
Microcontroller, might be stored in the FRAM
device. Via the contactless UHF interface, the
user has easy and convenient access to this
data. Vice versa, the user can transfer
configuration and control data to the
embedded system via the RF field. Many
applications like logistic tracking systems, data
logging, information displays or vending
machines, can benefit from this feature.
Key Features SummaryI 13.56MHz, ISO15693, ISO18000-3
I 860-900MHz UHF EPCglobal C1G2 standardI High capacity memory, up to 4kB FRAMI Long range read/write accessI High endurance: 1010 read/write cyclesI High speed programming:
- 75.52µs/8Bytes blockI Gamma ray resistance up to 50kGyI Dual Interface option:
Modulation type 10%ASK, 100%ASK 10%ASK, 100%ASK DSB-ASK, SSB-ASK, PR-ASK
Ambient operating temperature -20 °C to +85 °C -20 °C to +85 °C -20 °C to +85 °C Ambient storage temperature -40 °C to +85 °C -40 °C to +85 °C -40 °C to +85 °C
Input capacitance 24pF and 96pF 24pF and 96pF -
Data retention period 10 years at 70 °C 10 years at 70 °C 10 years at 70 °C
Data read/write endurance 1010 cycles 1010 cycles 1010 cycles
Data integrity 16-bit CRC per block 16-bit CRC per block 16-bit CRC
Anticollision 30 tags per second 30 tags per second yes, EPCglobal C1G2 Ver. 1.2.0, compliant
Data Rx Rate Reader/Writer->Tag 26.48kbits/sec 26.48kbits/sec 26.7kbps to 128kbps
52.96kbits/sec with Fast commands 52.96kbits/sec with Fast commands
Data Tx Rate Tag->Reader/Writer 26.48kbits/sec 26.48kbits/sec 40kbps to 640kbps
52.96kbits/sec with Fast commands 52.96kbits/sec with Fast commandsExamples of data reading *1 1525ms (2048 Bytes) - -
Examples of data writing *2 1413ms (2000 Bytes) - -
All company and product trade marks and registered trademarks used throughout this literature are acknowledged asthe property of their respective owners.
Embedded RF Board with FM3Microcontroller and sensors
MCU Board specificationI MCU: 32-bit ARM Cortex M3 Fujitsu