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Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Dec 22, 2015

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Page 1: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Bulk/surface micromachining

Page 2: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.
Page 3: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.
Page 4: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.
Page 5: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.
Page 6: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Lithography process sequence

mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake development de-scumming hard bake (additive or subtractive steps) resist stripping

Page 7: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Lithography process

Page 8: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.
Page 9: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.
Page 10: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

positive/negative resist

Page 11: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

positive/negative resist

Page 12: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.
Page 13: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Dark/light field

Page 14: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Buck micromachining

Page 15: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Anisotropic Etch

Page 16: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Anisotropic Etchants

Page 17: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

HNA Isotropic Etching

Page 18: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Lift-off

Page 19: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Surface Micromachining

Page 20: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

The MEMS materials used in different places

Page 21: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Surface Micromachining

Page 22: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Stiction during Drying Process

Page 23: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Solutions of Sticking Problem

This problem can be avoided by using thick structural and sacrificial layers, and short structures.

If long or thin plates and beams are needed, there are several options for preventing adhesion.

-Reduce contact area

-Reduce the surface tension of the final rinse solution

-Release by applying external forces:

Page 24: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

Material properties

Good step coverage Excellent adhesion. Low residual stress. Low pin hole density. Good mechanical strength. Good chemical resistance.

Page 25: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

LIGA :Lithographie, GaVanoformung, Abformun

g Lithographie( 德 ) = lithography ( 英 )印刷術,光刻術,微影 ( 中 ) Galvanoformung ( 德 ) = electroforming ( 英 ) 電版術成型,電沉積,電鑄 ( 中 ) Abformung ( 德 ) = mold forming ( 英 ) 製模成型,模造 ( 中 )

LIGA

Page 26: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

LIGA LIGA 技術的起源與發展技術的起源與發展 1975 年, Romankiw 等人 (IBM) 結合 X-ray 曝光及電鍍技術,製作厚度 20mm 之高深寬比金屬結構。1982 年,由德國 W. Ehrfeld 等人在 Karlsruche Nuclear Research Center (KernForschungszentrum Karlsruhe, KfK) 所發展。最初目的:為了製作高深寬比的核能原料分離元件。美國 Wisconsin 大學之 Guckel 教授,將 LIGA 技術與半導體製程結合,使 LIGA 接近 標準的製造技術。

Page 27: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

LIGA LIGA 製製程程

Page 28: Bulk/surface micromachining. Lithography process sequence mask making wafer cleaning/drying spin resist soft bake exposure post-exposure bake.

LIGA 的特色 可達到次微米的精確度,製造 3D 高深寬比細微結

構與零組件。

材料選擇範圍廣 ( 高分子、金屬、陶瓷、複合材料 ) 。

批次製造,產品品質均一,適合工業化量產。

易與 IC 製程整合,達成機電整合效果。

同步輻射 X 光源設備昂貴,取得不易。

X-Ray 光罩設計製作成本高。