-
BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in LFPAK567
May 2013 Product data sheet
1. General descriptionLogic level N-channel MOSFET in an LFPAK56
(Power SO8) package using TrenchMOStechnology. This product has
been designed and qualified to AEC Q101 standard for usein high
performance automotive applications.
2. Features and benefits• Q101 compliant• Repetitive avalanche
rated• Suitable for thermally demanding environments due to 175 °C
rating• True logic level gate with VGS(th) rating of greater than
0.5 V at 175 °C
3. Applications• 12 V Automotive systems• Motors, lamps and
solenoid control• Transmission control• Ultra high performance
power switching
4. Quick reference dataTable 1. Quick reference dataSymbol
Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V
ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 1 - - 25 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 37 W
Static characteristics
RDSon drain-source on-stateresistance
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 25.8 29 mΩ
Dynamic characteristics
QGD gate-drain charge VGS = 5 V; ID = 5 A; VDS = 32 V;Tj = 25
°C; Fig. 13; Fig. 14
- 1.9 - nC
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 2 / 13
5. Pinning informationTable 2. Pinning informationPin Symbol
Description Simplified outline Graphic symbol
1 S source
2 S source
3 S source
4 G gate
mb D mounting base; connected todrain
mb
1 2 3 4
LFPAK56; Power-SO8 (SOT669)
S
D
G
mbb076
6. Ordering informationTable 3. Ordering information
PackageType number
Name Description Version
BUK9Y29-40E LFPAK56;Power-SO8
Plastic single-ended surface-mounted package
(LFPAK56;Power-SO8); 4 leads
SOT669
7. MarkingTable 4. Marking codesType number Marking code
BUK9Y29-40E 92940E
8. Limiting valuesTable 5. Limiting valuesIn accordance with the
Absolute Maximum Rating System (IEC 60134).Symbol Parameter
Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V
VDGR drain-gate voltage RGS = 20 kΩ - 40 V
Tj ≤ 175 °C; DC -10 10 VVGS gate-source voltage
Tj ≤ 175 °C; Pulsed [1][2] -15 15 V
Tmb = 25 °C; VGS = 5 V; Fig. 1 - 25 AID drain current
Tmb = 100 °C; VGS = 5 V; Fig. 1 - 17.9 A
IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 -
101 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 37 W
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 3 / 13
Symbol Parameter Conditions Min Max Unit
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Source-drain diode
IS source current Tmb = 25 °C - 25 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 101
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-sourceavalanche energy
ID = 25 A; Vsup ≤ 40 V; RGS = 50 Ω;VGS = 5 V; Tj(init) = 25 °C;
unclamped;Fig. 3
[3][4] - 8.77 mJ
[1] Accumulated pulse duration up to 50 hours delivers zero
defect ppm[2] Significantly longer life times are achieved by
lowering Tj and or VGS[3] Single-pulse avalanche rating limited by
maximum junction temperature of 175 °C.[4] Refer to application
note AN10273 for further information.
003aaj020
0 30 60 90 120 150 1800
5
10
15
20
25
30
Tj (°C)
IDID(A)(A)
Fig. 1. Continuous drain current as a function ofmounting base
temperature
Tmb (°C)0 20015050 100
03aa16
40
80
120
Pder(%)
0
Fig. 2. Normalized total power dissipation as afunction of
mounting base temperature
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 4 / 13
003aaj021
10-3 10-2 10-1 1 1010-2
10-1
1
10
102
tAL (ms)
IALIAL(A)(A)
(1)(1)
(2)(2)
(3)(3)
Fig. 3. Avalanche rating; avalanche current as a function of
avalanche time
003aaj022
1 10 10210-2
10-1
1
10
102
103
VDS (V)
IDID(A)(A)
DCDC
100 ms100 ms10 ms10 ms
1 ms1 ms
100 us100 us
tp = 10 ustp = 10 usLimit RDSon = VDS / IDLimit RDSon = VDS /
ID
Fig. 4. Safe operating area; continuous and peak drain currents
as a function of drain-source voltage
9. Thermal characteristicsTable 6. Thermal characteristicsSymbol
Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistancefrom junction tomounting base
Fig. 5 - - 4.03 K/W
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 5 / 13
003aai538
10-6 10-5 10-4 10-3 10-2 10-1 110-2
10-1
1
10
tp (s)
Zth(j-mb)Zth(j-mb)(K/W)(K/W)
P
ttpT
tpδ = T
single shotsingle shot
δ = 0.5δ = 0.5
0.20.2
0.10.1
0.050.05
0.020.02
Fig. 5. Transient thermal impedance from junction to mounting
base as a function of pulse duration
10. CharacteristicsTable 7. CharacteristicsSymbol Parameter
Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - VV(BR)DSS
drain-sourcebreakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C
36 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 9; Fig. 10
1.4 1.7 2.1 V
ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 9
- - 2.45 V
VGS(th) gate-source thresholdvoltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;Fig. 9
0.5 - - V
VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.01 1 µAIDSS drain leakage
current
VDS = 40 V; VGS = 0 V; Tj = 175 °C - - 500 µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage
current
VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 25.8 29 mΩ
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 20.4 25 mΩ
RDSon drain-source on-stateresistance
VGS = 5 V; ID = 5 A; Tj = 175 °C;Fig. 12; Fig. 11
- - 58.3 mΩ
Dynamic characteristics
QG(tot) total gate charge - 5 - nC
QGS gate-source charge - 1.1 - nC
QGD gate-drain charge
ID = 5 A; VDS = 32 V; VGS = 5 V;Tj = 25 °C; Fig. 13; Fig. 14
- 1.9 - nC
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 6 / 13
Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance - 498 664 pF
Coss output capacitance - 85 102 pF
Crss reverse transfercapacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;Tj = 25 °C; Fig. 15
- 49 68 pF
td(on) turn-on delay time - 6 - ns
tr rise time - 7 - ns
td(off) turn-off delay time - 9 - ns
tf fall time
VDS = 30 V; RL = 5 Ω; VGS = 5 V;RG(ext) = 5 Ω; Tj = 25 °C
- 5 - ns
Source-drain diode
VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig.
16 - 0.84 1.2 V
trr reverse recovery time - 14.3 - ns
Qr recovered charge
IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 25 V; Tj = 25 °C -
6.6 - nC
003aaj024
0
15
30
45
60
0 1 2 3VDS(V)
ID(A)
VGS(V) = 10
2.6
3.5
4.5
2.4
3
Tj = 25 °C; tp = 300 μs
Fig. 6. Output characteristics; drain current as afunction of
drain-source voltage; typical values
003aaj025
0
20
40
60
80
0 2.5 5 7.5 10VGS(V)
RDSon(mΩ)
Fig. 7. Drain-source on-state resistance as a functionof
gate-source voltage; typical values
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 7 / 13
003aaj027
0 0.5 1 1.5 2 2.5 3 3.5 40
4
8
12
16
20
VGS (V)
IDID(A)(A)
Tj = 25°CTj = 25°C175°C175°C
Fig. 8. Transfer characteristics; drain current as afunction of
gate-source voltage; typical values
003aah025
0
0.5
1
1.5
2
2.5
3
-60 0 60 120 180Tj (°C)
VGS(th)(V)
max
typ
min
Fig. 9. Gate-source threshold voltage as a function ofjunction
temperature
003aah026
10-6
10-5
10-4
10-3
10-2
10-1
0 1 2 3VGS (V)
ID(A)
maxtypmin
Fig. 10. Sub-threshold drain current as a function ofgate-source
voltage
003aaj030
0
20
40
60
80
0 10 20 30ID(A)
RDSon(mΩ)
4.5
VGS(V) = 10
3 3.5
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a functionof drain
current; typical values
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 8 / 13
003aaj814
0
0.8
1.6
2.4
-60 0 60 120 180Tj (°C)
a
Fig. 12. Normalized drain-source on-state resistancefactor as a
function of junction temperature
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 13. Gate charge waveform definitions
003aaj032
0
2
4
6
8
10
0 2 4 6 8 10QG (nC)
VGS(V)
VDS= 32V
VDS= 14V
Fig. 14. Gate-source threshold voltage as a function ofjunction
temperature
003aaj033
10
102
103
10-1 1 10 102VDS(V)
C(pF)
Ciss
Crss
Coss
Fig. 15. Input, output and reverse transfer capacitancesas a
function of drain-source voltage; typicalvalues
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 9 / 13
003aaj034
0
20
40
60
80
0 0.4 0.8 1.2 1.6VSD (V)
IS(A)
Tj = 25 °CTj = 175°C
Fig. 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical values
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 10 / 13
11. Package outline
ReferencesOutlineversion
Europeanprojection Issue dateIEC JEDEC JEITA
SOT669 MO-235
sot669_po
11-03-2513-02-27
Unit(1)
mmmaxnommin
1.20
1.01
0.15
0.000.25
0.50
0.35
4.41
3.62
2.2
2.0
6.2
5.8
0.85
0.40
A
Dimensions (mm are the original dimensions)
Note1. Plastic or metal protrusions of 0.15 mm maximum per side
are not included.
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads SOT669
A1 A2
1.10
0.95
A3 b b2 b3
0.1
L2 w y
8°
0°
θ
b4 c c2 D(1) D1(1) E(1) E1(1)
3.3
3.1
e
1.27
H L
0.25
0.19
0.30
0.24
4.20 1.3
0.80.25
0.9
0.7
4.10
3.80
5.0
4.8
1.3
0.8
L1
A C
1/2 e
w A
0 5 mm
scale
e
E1
b
c2
A2
1 2 3 4
mountingbase
D1
c
E
b2
b3
b4
H D
L2
L1
C
X
y C
q
(A3)
L
A
A1
detail X
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 11 / 13
12. Legal information
12.1 Data sheet statusDocumentstatus [1][2]
Productstatus [3]
Definition
Objective[short] datasheet
Development This document contains data fromthe objective
specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary
specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before
initiating orcompleting a design.
[2] The term 'short data sheet' is explained in section
"Definitions".[3] The product status of device(s) described in this
document may have
changed since this document was published and may differ in case
ofmultiple devices. The latest product status information is
available onthe Internet at URL http://www.nexperia.com.
12.2 DefinitionsPreview — The document is a preview version
only. The document is stillsubject to formal approval, which may
result in modifications or additions.Nexperia does not give any
representations or warranties as tothe accuracy or completeness of
information included herein and shall haveno liability for the
consequences of use of such information.
Draft — The document is a draft version only. The content is
still underinternal review and subject to formal approval, which
may result inmodifications or additions. Nexperia does not give
anyrepresentations or warranties as to the accuracy or completeness
ofinformation included herein and shall have no liability for the
consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full
data sheetwith the same product type number(s) and title. A short
data sheet isintended for quick reference only and should not be
relied upon to containdetailed and full information. For detailed
and full information see therelevant full data sheet, which is
available on request via the local Nexperiasales office. In case of
any inconsistency or conflict with theshort data sheet, the full
data sheet shall prevail.
Product specification — The information and data provided in a
Productdata sheet shall define the specification of the product as
agreed betweenNexperia and its customer, unless Nexperia
andcustomer have explicitly agreed otherwise in writing. In no
event however,shall an agreement be valid in which the Nexperia
productis deemed to offer functions and qualities beyond those
described in theProduct data sheet.
12.3 DisclaimersLimited warranty and liability — Information in
this document is believedto be accurate and reliable. However,
Nexperia does not giveany representations or warranties, expressed
or implied, as to the accuracyor completeness of such information
and shall have no liability for theconsequences of use of such
information. Nexperia takes noresponsibility for the content in
this document if provided by an informationsource outside of
Nexperia.
In no event shall Nexperia be liable for any indirect,
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without limitation -lost profits, lost savings, business
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Notwithstanding any damages that customer might incur for any
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Right to make changes — Nexperia reserves the right tomake
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Suitability for use in automotive applications — This
Nexperiaproduct has been qualified for use in
automotiveapplications. Unless otherwise agreed in writing, the
product is not designed,authorized or warranted to be suitable for
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Nexperia product can reasonably be expectedto result in personal
injury, death or severe property or environmentaldamage. Nexperia
and its suppliers accept no liability forinclusion and/or use of
Nexperia products in such equipment orapplications and therefore
such inclusion and/or use is at the customer's ownrisk.
Quick reference data — The Quick reference data is an extract of
theproduct data given in the Limiting values and Characteristics
sections of thisdocument, and as such is not complete, exhaustive
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Applications — Applications that are described herein for any of
theseproducts are for illustrative purposes only. Nexperia makes
norepresentation or warranty that such applications will be
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Customers are responsible for the design and operation of
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Nexperiaaccepts no liability for any assistance with applications
orcustomer product design. It is customer’s sole responsibility to
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thecustomer’s applications and products planned, as well as for the
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Customers shouldprovide appropriate design and operating safeguards
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Nexperia does not accept any liability related to any
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Limiting values — Stress above one or more limiting values (as
defined inthe Absolute Maximum Ratings System of IEC 60134) will
cause permanentdamage to the device. Limiting values are stress
ratings only and (proper)operation of the device at these or any
other conditions above thosegiven in the Recommended operating
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limiting values will permanently and irreversibly affectthe quality
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© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 12 / 13
No offer to sell or license — Nothing in this document may be
interpretedor construed as an offer to sell products that is open
for acceptance or thegrant, conveyance or implication of any
license under any copyrights, patentsor other industrial or
intellectual property rights.
Export control — This document as well as the item(s) described
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is forreference only. The English version shall prevail in case of
any discrepancybetween the translated and English versions.
12.4 TrademarksNotice: All referenced brands, product names,
service names andtrademarks are the property of their respective
owners.
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© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y29-40EN-channel 40 V, 29 mΩ logic level MOSFET in
LFPAK56
BUK9Y29-40E All information provided in this document is subject
to legal disclaimers.
Product data sheet 7 May 2013 13 / 13
13. Contents1 General description
............................................... 12 Features and
benefits ............................................13
Applications
........................................................... 14
Quick reference data .............................................
15 Pinning information
...............................................26 Ordering
information .............................................27 Marking
...................................................................
28 Limiting values
.......................................................29 Thermal
characteristics .........................................410
Characteristics
.......................................................511 Package
outline ................................................... 1012
Legal information
.................................................1112.1 Data sheet
status ............................................... 1112.2
Definitions
...........................................................1112.3
Disclaimers
.........................................................1112.4
Trademarks ........................................................
12
© Nexperia B.V. 2017. All rights reservedFor more information,
please visit: http://www.nexperia.comFor sales office addresses,
please send an email to: [email protected] Date of
release: 07 May 2013
1. General description2. Features and benefits3. Applications4.
Quick reference data5. Pinning information6. Ordering information7.
Marking8. Limiting values9. Thermal characteristics10.
Characteristics11. Package outline12. Legal information