RFIC for Mobile Wireless Communication RFIC for Vehicular Communication and Radar Building IP for Current and Future RF IC Assoc. Professor Boon Chirn Chye Programme Director, RF & MM‐wave, VIRTUS, NTU Assoc. Editor, IEEE Transaction of VLSI; EEE NTU Teaching Excellent Award 2012; Commendation Award for Teaching Excellence 2014. IEEE Electron Devices Letters Golden Reviewer. Web: http://www.ntu.edu.sg/home/eccboon
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Boon 2016 dist min - NTU · GlobalFoundries Singapore Pte. Ltd-NTU Joint R&D: Direct Integration of GaN Power Devices on CMOS Circuits for Demonstrate Power Management Solutions,
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• More than 2/3 undergraduates, with about 1/3 graduate students
• Students from more than 70 countries study, research and play at NTU
• VIRTUS: NTU’s IC Design Centre of Excellence, jointly funded by Singapore Economic Development Board (EDB).
• Official Opening on 20th Oct 2010.
• NTU Ranked 13 in QS University World Rankings 2015
• 7th in Electrical and Electronic Engineering for 2015 QS World Ranking (36 in 2011).
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ResearchLeadershipinRF/MMWICFunding Source/ Project Title Quantum ($)
Cash Only (Total including in-kind)
Role Grant Period
Delta-NTU Corp. Lab: A Wireless Heterogeneous Network Transceiver Chipset for Content-Driven Transmission of Learning Media (SLE-RP3) Research Area (SLE)
PI 1st July 2016 to 30th
June 2021
MOE Tier 1: Monolithic Terahertz Passive Components in Advanced CMOS Technology: From Fundamental Understandings to Integrated Circuit Applications
PI 1st November 2016 to 31st October 2018
GlobalFoundries Singapore Pte. Ltd-NTU Joint R&D: Direct Integration of GaN Power Devices on CMOS Circuits for Demonstrate Power Management Solutions,
PI 1st June 2016 to 31st
December 2018
SMART-POC: An Integrated Platform Approach Towards Non-Invasive Continuous Blood Glucose Monitoring Addressing Clinical Need for Early Diagnosis and Improved Compliance
PI 1st July 2016 to 30th
July 2017
Huawei Tech. Co. Ltd-NTU Joint R&D: 10GiFi research & development of ultra-wideband RF transceiver
PI 15th July 2014 to 14th July 2017
Tier 2: High Thermal Resolution Ultra-Low Power Integrated Imager: Fund. Issues in CMOS
PI July 2013 to June 2016
Project 17: Electronic Circuit Design, Communications under SMART-IRG5: Low Energy Electronic Systems (MIT-NTU)
PI 1st April 2014 to 30th
March 2016
ResearchLeadershipinRF/MMWIC
& Other Grants in RF IC. Total Grants:$9,887,723.22 In Cash
• D2D (Device‐to‐Device) communications using DSRC– to off‐load the base stations in cellular networks– to improve response time
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Motivation
* DSRC (Dedicated Short-Range Communication
*
802.11p system prototyping
12V
DC Booster
Neg. BiasGen.
>20V
(‐)
(‐) ANTRFFront‐End
ANT
TransmitterReceiver
1.8V / 3.3V
DAC / ADC
11p Digital Baseband & MAC
FPGA board Discrete component CMOS circuit GaN circuit
5.9 GHz
OSC.
Power Electronic: High Efficiency Wideband GaN + CMOS PA
5 to 6 GHz Power Amplifier in MMIC
Psat >36dBm, Efficiency >70%
Suitable for IEEE802.11ax WiFi that will be ratify in 2019.
Using mature CREE GaNcommercial technology.
2.6-6.4GHz 256QAM 80MHz High Efficiency GaN PA• Highly Compact & Unconditionally stable
PA, with measured efficiency (eff.) • 2 times higher and 3.5 times wider
bandwidth vs. similar commercial PAs. • Tested and meet the 80MHz 256QAM
modulation WLAN 802.11ac.
Mao Mengda, Pilsoon ChoiSupervisor: A/P. Boon Chirn Chye
High Efficiency Wideband GaN + CMOS PA
Latest GaN + CMOS PA To maintain yield CMOS is used to improve stability. Excellent stability. Good Gmax. Better frequency accuracy through CMOS control. With LEES> lower loss and higher power , save cost with less SMD.
gateV
inZ outZ
Novel GaN Oscillator as Signal Source
Best Reported Fully Integrated GaN OSC Phase Noise 7.9GHz -135dBc/Hz@ 1MHz (MWCL)
It successfully demonstrated that the integrated FFO fabricated in GaN‐on‐SiC HEMT technology can achieve high power as previously reported, and feature ultra‐low phase noise, which makes GaN‐on‐SiC HEMTs attractive to both high power and low noise microwave source applications.
2nd OSC Measured Lowest Voltage GaN OSC : 3.3VBest Phase Noise (FOM) reported.-139dBc/Hz@1MHz, 36mA.
Latest GaN + CMOS VCONo varactor in GaN. Precise frequency control. Wide tuning range. With LEES> wider range and better PN.
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First Fully Integrated TRX for IEEE802.11p in GaN 0.25nm CREE
GaN PA @ 5.9GHz (1.28 mm2)
10%10%20%20%30%30%
20dBm(100m
W)
30dBm
(1W)
Drain efficiency
Pout
GaN Front-end @ 5.9GHz(2 mm2)
evolving
Advantage on system level power saving: 22% efficiency over one decade power change EVM better than 25dB with OFDM 64QAM. With LEES> CMOS control output power, lower
loss and higher power , save cost with less SMD.
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LEES: High efficiency techniqueConventional Tx/Rx Switching Scheme
Proposed Tx/Rx Switching Scheme
10 , ⁄
, ,
,
35.4% @ 708mW(due to 1.5 dB SPDT
loss)
50% @ 1W
GaN RF front-end @ 5.9GHz• Fully integrated & energy
Overcoming Gain Flatness, Wideband Gain Trade-off for MMW Application.
MMW High Gain Power Amplifier IEEE 802.15.3c Power Amplifier
This work demonstrates an ILPA with largest injection locking bandwidth. The fabricated PA has achieved a injection locking range from 50 GHz to 59 GHz. Maximum output power of 11.39 dBm has been obtained while the highest PAE is 16.1 %. Moreover, the chip size is 260 μm x 400 μm excluding pads.
1.3mW/Gb/s World Best Efficiency 36GbpsEthernet Wireline Communication (Car Ethernet?)
World First and Fastest Consumer WLAN IEEE 802.11ax
IEEE 802.11ax DemonstrationSubjected to Most Rigorous Industrial Multiple Carriers
& Jammers Test
World First and Fastest Consumer WiFi IEEE 802.11ax
Virtus‐EEE‐NTU 29
Xiang Yi, Kaituo Yang, Zhipeng Liang, Bei Liu, Khanna Devrishi, Chenyang Li, GuangyinFeng, Dror Regev, Shimi Shilo, Fanyi Meng, Hang Liu, Junyi Sun, Gengen Hu
Supervisor: Assoc. Prof. Boon Chirn Chye
Subjected to Most Rigorous Industrial Multiple Carriers &
Jammers Test
Energy Harvesting Batteryless Flexible Transceiver for Biomedical Applications
Wi-Fi Energy Harvester
Measured Board with Fully Integrated Energy Aware ZigBeeChip
Sub-threshold Biasing for RF & mmW
How we do it. 31
Fund. analysis and RF circuit design:High GTUmax can be obtained with weak-inv. Low power from weak-inv. (high transconductance vs. current)No performance reduction.
Conventional Concept – Trade-off10 x energy reduction / op. freq.10x performance reduction
0102030405060708090
100
Energy/Frequency Performance
How others do it.
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Methodologies:(>74 International Publications, >55 IC Chips):
Sub-threshold RF Design
Energy Aware RF System Level Design
Ultra-Low Power Series Quadrature VCO
Novel TSPC Frequency Synthesizer
Novel Large Signal MGTR Power Amplifier
Energy Harvesting & Storing
Specific Aim:Current transceivers power consumption is too high. Requires very large battery or energy harvesting & storing devices. Our Aim to Achieve the Ground Breaking Power consumption of RF Transceiver <10 mW