BD9897FS

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STRUCTURE Si l icon Monol i t h i c In te g ra te d C i rcui t

NAME OF PRODUCT DC AC Inv ert er Contro l IC

TYPE B D 9 8 9 7 F S

FUNCT

l

ON 36V Hig h vo l tage process

Ic h con tro l wi th Ful I-Br idge

Lamp current and voltage sense feed back control

Sequencing easi ly achieved with Soft Start Control

Short c i r c u i t p ro tec t ion w i t h Timer La tch

Under Vo l tage Lock Out

Mode-selectable the op er at in g or stand-by mode by stand-by p i n

Synch ronous opera t i ng the ot he r BD9897FS I C' s

BURST mode cont ro l ed by PWM and DC i nput

Output l iner Control by exte rnal DC vo l tage

[ Supply Voltage Vcc I 36 V

xi mum Rat ings (Ta 25C)

Parameter Svmbol L im it s

[ Operating Temperature Range Top r -40-+85 OC

Un i t

BST p i n

SW pi n

BST-SW vo l taae d if fe re n c e

Power Dissipat ion

Pd 950*

mW

BST

S

EST-SW

S t o r a g e ~ e m ~ e r a f i r eange Tstg

'Pd de ra te at 7.6mW/C fo r ten pe ra tur e above Ta 25 (When mounted on a PCB 70. 0t~n X7 0.0m nX1 .6t~n )

OOperat ing co nd it io n

40

36

7

-55-+I 50

Status of this document

The Japanese version of th is document is the o ff ic ia l spe cif ica tion.

Please use the tra ns lat ion vers ion of th is document as a reference to expedite understanding of the of f i c ia l version.

V

V

V

C

Maximum Junct ion Tem~erature

Timax

I f these are any uncer ta in ty in t ran slat io n vers ion of t h i s document, o f f ic ia l vers ion takes pr i or i ty .

Un i t

V

V

V

kHz

kHz

Parameter

Supply vol tage

BST vo t age

BST-SW v ol ta ge di ff er e nc e

CT o s c i l l a t i o n f re qu en cy

BCT osc i l l a t io n f requen cy

REV.

+I50

C

Symbo l

Vcc

EST

BST-SW

~ C T

f BCT

L i m i t s

7.5-30.0

4.0-36.0

4.0-6.5

60-1 80

0.05-1.00

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RO m

OPackage i mens i ons

IJ 6fO Z

M a x 1 3 9 5

i n c t

U ~ W . B U R R ) 1 evice Mark

ot No

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,

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0Block Diagram

CT.SYNC.OU1

VCC REC CT.SYNC.1b CT R1 BR1 BCT D U n DUN. OU1

n n

n n

I w w

5: B S 7

BSTi

FE

IS

HN

VS

HNZ

VREF

SWI

sw:

LNI

LN:

PGN[

COUP COMP: CF SRl UVLC FAIL

REV

A

OPin Descr i p t i on

I I

3

LNl

NMOS FET

dr i ve r

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ONOTE FOR USE

When desig ning the extern al c i r c u i t , inc l udin g adequate margins for v a r i a t i o n between extern al devices and

IC. Use adequate margins for steady sta te and tran sien t ch ar ac ter ist ics .

2 .

T h ec i r c u i t f un c t i o na l i t y i sgua ran teed w i t h i n o f amb ient tem pera tu reopera t i on rangeas long as i t i s w i t h i n

recommended ope rat ing range. The standard el e ct r i ca l ch ar ac te r is t ic values cannot be guaranteed at other

vol tage s i n the ope rat ing ranges, however the va r ia t io n w i l l be smal I .

3 .

Mounting fa i lures,

such as m isdi r ect ion or miscounts, may harm the device.

A

str on g e le ct romagnet ic f i e l d may cause the IC t o ma I fun ct ion.

5 . The GND p in should be the locat ion w i t h in . 3 compared w i th the PGND pin.

6 .

BD9897FS incorp orate a b u i l t - in thermal shutdown c i r c u i t (TSD c i r c u i t ) . The thermal shutdown c i r c u i t (TSD

c i r c u i t ) i s designed on ly t o shut the IC o f f to prevent runaway thermal operat ion. I t i s not des igned to

pr ot ec t the IC or guarantee i t s operat ion of the thermal shutdown c i rcu i t is assumed.

7 . Absolute maximum ra t in gs are those values that, i f exceeded, may cause the l i f e of a device t o become

s ig n i f ic a n t l y shortened. Moreover, the exact f a i l u r e mode caused by short or open is not defined. Phys ical

countermeasures,

such as a fuse, need to

be

considered when using a device beyond

i

t s maximum ra t ings.

8 .

About the ex t erna I FET, the pa ras

i i

c Capac

i

o r may cause t he g at e vo I t age t o change, when the dra

i

n vo I t age

i s swi tching. Make sure to leave adequate margin for th is IC va r ia t io n.

9 . On op era t ing Slow St ar t Control

(SS i s less than 2.2 4, I t does not op erate Timer Latch.

0 . By STB voltag e, BD9897FS ar e changed t o 2 sta te s. The refore , do not inp ut STB p i n vo lta ge between one

st a te and the other st at e (0.8-2.OV).

1 1

The p i n connected a connector need to connect to the r es is tor fo r e l ec t r i c a l

surge des t ruc t ion.

Th is IC i s a mo nol i thic IC which (as shown i s F ig-1) has P su bs tra te and between the var iou s pin s.

A

P-N junc t ion i s formed from th is P layer o f each pin. For example, the re la t io n between each po te nt ia l

i s as fo l lows,

O(W hen GND

>

PinB and GND

>

PinA, the P-N junc t ion ope rates as a p ar as i t ic diode.)

O(When PinB

>

GND > PinA, the P-N junc t ion operates as a pa ra s i t i c t ran s is to r . )

P a ras i t i c di odes can occur i nev i t ab l y i n t he s t ruc tu re o f t he IC. The ope ra t i on o f pa ras i t i c d i odes can re su l t

i n mutual int er fe re nc e among c i r c u i t s as we1 I as op era tion f a u lt s and ph ysic al damage. Acco rding ly you must

not use methods by which pa ra si t i c diodes operate, such as apply ing a vo l tage that

i s lower th an th e GND

(P subst ra te) vo l tage to an input p in .

1 2 . This IC i s a mo nol i thic IC which (as shown i s F ig-1)has sub stra te and between the var iou s pins. A P-N

jun ct i on i s formed from th is P laye r o f each pin. For example, t he r e l a t i o n be tween each po ten t i a l i s

as fo l lows,

O(Whe n GND

>

Pi nB and GND

>

PinA, the P-N jun cti on opera tes as a paras i t i c d i ode . )

O(When PinB > GND

>

PinA, th e P-N junc t ion operates as a pa ra si t i c t ran sisto r.)

Pa ra s i t i c d iodes can occur ine v i ta b ly in the s t ru c tur e o f the IC. The oper at ion o f p ar as i t i c d iodes can resu l t

i n mutual int er fe re nc e among c i r c u i t s as we1 I as op era tion f a u lt s and ph ysic al damage. Acco rdingly you must

not use methods by which pa r a s it ic diodes operate, such as appl ying a vo lta ge th at is lower than th e GND

(P subs trate) vol tag e to an input pin.

Resistanc e Transistor (NPN)

(PinA)

AGND

Parasitic diode

(PinB)

E

Parasitic diode

GND

(PinB)

(PinA)

o-?-w -

Parasitic diode

GND

Other adjacent components Parasitic diode

Fig-1

Sim pl i f e d s t r u c t u r e o f a B i p o l a r

I

REV. A

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NotesNo technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or relatedto the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

Appendix1-Rev2.0

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Copyright 2007 ROHM CO.,LTD.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level

of reliability and the malfunction of which would directly endanger human life (such as medical

instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers

and other safety devices), please be sure to consult with our sales representative in advance.

It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance

of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow

for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in

order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM

cannot be held responsible for any damages arising from the use of the products under conditions out of the

range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix