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BAT46GW100 V, 250 mA Schottky barrier diode24 November 2016
Product data sheet
1. General descriptionPlanar Schottky barrier diode with an
integrated guard ring for stress protection, encapsulated in
anSOD123 small Surface-Mounted Device (SMD) plastic package.
2. Features and benefits• Low forward voltage: VF ≤ 850 mV• Low
leakage current: IR ≤ 4 µA• Reverse voltage VR ≤ 100 V• Low
capacitance• Small SMD plastic package• AEC-Q101 qualified
3. Applications• High-speed switching• Line termination• Voltage
clamping• Reverse polarity protection
4. Quick reference data
Table 1. Quick reference dataSymbol Parameter Conditions Min Typ
Max Unit
VR reverse voltage Tj = 25 °C - - 100 V
VF forward voltage IF = 250 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25
°C
- 710 850 mV
IR reverse current VR = 75 V; pulsed; Tj = 25 °C - 1 4 µA
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 2 / 13
5. Pinning information
Table 2. Pinning informationPin Symbol Description Simplified
outline Graphic symbol
1 K cathode[1]
2 A anode21
SOD123 sym001
1 2
[1] The marking bar indicates the cathode.
6. Ordering information
Table 3. Ordering informationPackageType number
Name Description Version
BAT46GW SOD123 Plastic surface-mounted package; 2 leads
SOD123
7. Marking
Table 4. Marking codesType number Marking code
BAT46GW G8
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© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 3 / 13
8. Limiting values
Table 5. Limiting valuesIn accordance with the Absolute Maximum
Rating System (IEC 60134).Symbol Parameter Conditions Min Max
Unit
VR reverse voltage Tj = 25 °C - 100 V
IF forward current - 250 mA
IFSM non-repetitive peakforward current
tp < 10 ms; Tj(init) = 25 °C; square wave - 2.5 A
[1] - 390 mWPtot total power dissipation Tamb ≤ 25 °C[2] - 660
mW
Tj junction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper,
tin-plated and standard footprint.[2] Device mounted on an FR4 PCB,
single-sided copper, tin-plated, mounting pad for cathode 1
cm2.
9. Thermal characteristics
Table 6. Thermal characteristicsSymbol Parameter Conditions Min
Typ Max Unit
[1] - - 320 K/WRth(j-a) thermal resistancefrom junction
toambient
in free air[2] - - 190 K/W
Rth(j-sp) thermal resistancefrom junction to solderpoint
[3] - - 35 K/W
[1] Device mounted on an FR4 PCB, single-sided copper,
tin-plated and standard footprint.[2] Device mounted on an FR4 PCB,
single-sided copper, tin-plated, mounting pad for cathode 1 cm2.[3]
Soldering point of cathode tab.
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 4 / 13
aaa-025640
10-5 1010-210-4 10210-1tp (s)
10-3 1031
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.01
0.33
0.75
0.05
0.02
0.20
0.50
0.10
0.25
0
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as
a function of pulse duration; typical valuesaaa-025641
10-5 1010-210-4 10210-1tp (s)
10-3 1031
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.010.02
0.050.10
0.200.25
0.330.50
0.75
0
FR4 PCB, mounting pad for cathode 1 cm2
Fig. 2. Transient thermal impedance from junction to ambient as
a function of pulse duration; typical values
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© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 5 / 13
10. Characteristics
Table 7. CharacteristicsSymbol Parameter Conditions Min Typ Max
Unit
V(BR)R reverse breakdownvoltage
IR = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
100 - - V
IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
- 175 200 mV
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
- 315 350 mV
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = -40 °C
- - 470 mV
IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
- 415 475 mV
IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = -40 °C
- - 560 mV
VF forward voltage
IF = 250 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
- 710 850 mV
VR = 1.5 V; Tj = 25 °C - 0.2 0.5 µA
VR = 1.5 V; pulsed; Tj = 60 °C - - 12 µA
VR = 10 V; pulsed; Tj = 25 °C - 0.3 0.8 µA
VR = 10 V; pulsed; Tj = 60 °C - - 20 µA
VR = 50 V; pulsed; Tj = 25 °C - 0.7 2 µA
VR = 50 V; pulsed; Tj = 60 °C - - 44 µA
VR = 75 V; pulsed; Tj = 25 °C - 1 4 µA
VR = 75 V; pulsed; Tj = 60 °C - - 80 µA
VR = 100 V; pulsed; Tj = 25 °C - 2 9 µA
VR = 100 V; pulsed; Tj = 60 °C - - 120 µA
IR reverse current
VR = 100 V; pulsed; Tj = 85 °C - - 600 µA
VR = 0 V; f = 1 MHz; Tj = 25 °C - - 39 pFCd diode
capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C - - 21 pF
trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1
mA;RL = 100 Ω; Tj = 25 °C
- 5.9 - ns
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 6 / 13
006aac396
VF (V)0.0 1.20.80.4
10- 3
10- 2
10- 1
1
IF(A)
10- 4
(1)(2)
(3)(4)
(5)
(3)
(4)
(5)
(1) Tamb = 150 °C(2) Tamb = 125 °C(3) Tamb = 85 °C(4) Tamb = 25
°C(5) Tamb = -40 °C
Fig. 3. Forward current as a function of forwardvoltage; typical
values
006aac397
IR(A)
10- 6
10- 8
10- 7
10- 3
10- 4
10- 5
10- 2
10- 9
VR (V)0 10060 8020 40
(5)
(1)
(2)
(4)
(3)
(1) Tamb = 125 °C(2) Tamb = 85 °C(3) Tamb = 60 °C(4) Tamb = 25
°C(5) Tamb = -40 °C
Fig. 4. Reverse current as a function of reversevoltage; typical
values
VR (V)0 1008040 6020
006aac39835
Cd(pF)
25
15
5
0
10
20
30
f = 1 MHz; Tamb = 25 °C
Fig. 5. Diode capacitance as a function of reverse voltage;
typical values
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 7 / 13
11. Test information
trr
(1)
+ IFt
output signal
tr tpt
10 %
90 %VR
input signal
V = VR + IF × RS
RS = 50 ΩIF
D.U.T.
Ri = 50 Ω
SAMPLINGOSCILLOSCOPE
mga881
(1) IR = 1 mA
Fig. 6. Reverse recovery time: test circuit and waveforms
tptcy
P
t006aac658
duty cycle δ =
tp
tcy
Fig. 7. Duty cycle definition
The current ratings for the typical waveforms are calculated
according to the equations: IF(AV) = IM× δ with IM defined as peak
current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined
asRMS current.
Quality informationThis product has been qualified in accordance
with the Automotive Electronics Council (AEC)standard Q101 - Stress
test qualification for discrete semiconductors, and is suitable for
use inautomotive applications.
12. Package outline
16-10-13Dimensions in mm
21
3.753.45
2.802.55
1.71.5
1.31.0
Fig. 8. Package outline SOD123
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© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 8 / 13
13. Soldering
SOD123
sod123_fr
occupied area
solder paste
solder resist
Cu pad
Dimensions in mm16-05-1016-08-31
0.81
0.91 2.36
1.11
0.81
4.18
0.91
1.11
3.27
4.58
3.1
1.421.12 1.222.1 1.62
Fig. 9. Reflow soldering footprint for SOD123
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© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 9 / 13
SOD123
sod123_fw
occupied area
glue dot
solder resist
solder land
Dimensions in mm16-09-0216-09-06
1.2
0.331.2
2.5 2
2.65
7.5
4.5
2.55 2.43.5
Fig. 10. Wave soldering footprint for SOD123
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© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 10 / 13
14. Revision history
Table 8. Revision historyData sheet ID Release date Data sheet
status Change notice Supersedes
BAT46GW v.1 20161124 Product data sheet - -
-
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 11 / 13
15. Legal information
Data sheet status
Documentstatus [1] [2]
Productstatus [3]
Definition
Objective[short] datasheet
Development This document contains data fromthe objective
specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary
specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before
initiating orcompleting a design.
[2] The term 'short data sheet' is explained in section
"Definitions".[3] The product status of device(s) described in this
document may have
changed since this document was published and may differ in case
ofmultiple devices. The latest product status information is
available onthe Internet at URL http://www.nexperia.com.
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Limiting values — Stress above one or more limiting values (as
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© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 12 / 13
TrademarksNotice: All referenced brands, product names, service
names andtrademarks are the property of their respective
owners.
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© Nexperia B.V. 2017. All rights reserved
Nexperia BAT46GW100 V, 250 mA Schottky barrier diode
BAT46GW All information provided in this document is subject to
legal disclaimers.
Product data sheet 24 November 2016 13 / 13
16. Contents
1. General
description......................................................12.
Features and
benefits.................................................. 13.
Applications..................................................................
14. Quick reference
data....................................................15. Pinning
information......................................................26.
Ordering
information....................................................27.
Marking..........................................................................28.
Limiting
values.............................................................
39. Thermal
characteristics............................................... 310.
Characteristics............................................................511.
Test
information.........................................................
712. Package
outline..........................................................
713.
Soldering.....................................................................
814. Revision
history........................................................1015.
Legal
information.....................................................
11
© Nexperia B.V. 2017. All rights reservedFor more information,
please visit: http://www.nexperia.comFor sales office addresses,
please send an email to: [email protected] Date of
release: 24 November 2016
1. General description2. Features and benefits3. Applications4.
Quick reference data5. Pinning information6. Ordering information7.
Marking8. Limiting values9. Thermal characteristics10.
Characteristics11. Test information12. Package outline13.
Soldering14. Revision history15. Legal
information16. Contents