á÷üâ.+o!Qåá § +åð,*Ù hr/' ES]䥥¤L~ CØ «aÚ½ò.¢ð · Title á÷üâ.+o!Qåá § +åð,*Ù hr/' ES]䥥¤L~ CØ «aÚ½ò.¢ð Author á÷üâ.+o!Qåá § +ßÍ)gá6

To learn more about ON Semiconductor, please visit our website at www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected].

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

©2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH40T65SHDF Rev. C1

FGH40T65SHDF —

650 V, 40 A Field Stop Trench IG

BT

May 2014

FGH40T65SHDF650 V, 40 A Field Stop Trench IGBT

Features

• Maximum Junction Temperature : TJ = 175oC

• Positive Temperaure Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A

• 100% of the Parts tested for ILM(1)

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• RoHS Compliant

General Description

Using novel field stop IGBT technology, Fairchild’s new series of

field stop 3rd generation IGBTs offer superior conduction and

switching performance and easy parallel operation. This device

is well suited for the resonant or soft switching application such

as induction heating and MWO.

Applications

• Induction Heating, MWO

Absolute Maximum Ratings

Notes:1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 30 Ω, Inductive Load

2. Repetitive rating: Pulse width limited by max. junction temperature

Symbol Description FGH40T65SHDF_F155 Unit

VCES Collector to Emitter Voltage 650 V

VGES Gate to Emitter Voltage ± 20 V

Transient Gate to Emitter Voltage ± 30 V

ICCollector Current @ TC = 25

oC 80 A

Collector Current @ TC = 100oC 40 A

ILM (1) Pulsed Collector Current @ TC = 25oC 120 A

ICM (2) Pulsed Collector Current 120 A

IFDiode Forward Current @ TC = 25

oC 40 A

Diode Forward Current @ TC = 100oC 20 A

IFM Pulsed Diode Maximum Forward Current 60 A

PDMaximum Power Dissipation @ TC = 25

oC 268 W

Maximum Power Dissipation @ TC = 100oC 134 W

TJ Operating Junction Temperature -55 to +175 oC

Tstg Storage Temperature Range -55 to +175 oC

TLMaximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds300 oC

G

E

CE C

G

COLLECTOR(FLANGE)

FGH40T65SHDF —

650 V, 40 A Field Stop Trench IG

BT

©2014 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH40T65SPHDF Rev. C1

Thermal Characteristics

Package Marking and Ordering Information

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter FGH40T65SHDF_F155 Unit

RθJC (IGBT) Thermal Resistance, Junction to Case, Max. 0.56 oC/W

RθJC (Diode) Thermal Resistance, Junction to Case, Max. 1.75 oC/W

RθJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W

Device Marking Device Package Reel Size Tape Width Qty per Tube

FGH40T65SHDF FGH40T65SHDF_F155 TO-247 G03 - - 30

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 650 - - V

∆BVCES ∆TJ

Temperature Coefficient of Breakdown

VoltageVGE = 0 V, IC = 1 mA - 0.6 - V/oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 µA

IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ± 400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 40 mA, VCE = VGE 3.5 5.5 7.5 V

VCE(sat) Collector to Emitter Saturation Voltage

IC = 40 A, VGE = 15 V - 1.45 1.81 V

IC = 40 A, VGE = 15 V,

TC = 175oC

- 1.8 - V

Dynamic Characteristics

Cies Input Capacitance

VCE = 30 V, VGE = 0 V,

f = 1 MHz

- 1982 - pF

Coes Output Capacitance - 70 - pF

Cres Reverse Transfer Capacitance - 25 - pF

Switching Characteristics

Td(on) Turn-On Delay Time

VCC = 400 V, IC = 40 A,

RG = 6 Ω, VGE = 15 V,

Inductive Load, TC = 25oC

- 18 - ns

Tr Rise Time - 27 - ns

Td(off) Turn-Off Delay Time - 64 - ns

Tf Fall Time - 3 - ns

Eon Turn-On Switching Loss - 1.22 - mJ

Eoff Turn-Off Switching Loss - 0.44 - mJ

Ets Total Switching Loss - 1.66 - mJ

Td(on) Turn-On Delay Time

VCC = 400 V, IC = 40 A,

RG = 6 Ω, VGE = 15 V,

Inductive Load, TC = 175oC

- 18 - ns

Tr Rise Time - 31 - ns

Td(off) Turn-Off Delay Time - 70 - ns

Tf Fall Time - 56 - ns

Eon Turn-On Switching Loss - 1.78 - mJ

Eoff Turn-Off Switching Loss - 0.78 - mJ

Ets Total Switching Loss - 2.56 - mJ

FGH40T65SHDF —

650 V, 40 A Field Stop Trench IG

BT

©2014 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH40T65SHDF Rev. C1

Electrical Characteristics of the IGBT (Continued)

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Qg Total Gate Charge

VCE = 400 V, IC = 40 A,

VGE = 15 V

- 68 - nC

Qge Gate to Emitter Charge - 12 - nC

Qgc Gate to Collector Charge - 25 - nC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VFM Diode Forward Voltage IF = 20 ATC = 25

oC - 1.5 1.95V

TC = 175oC - 1.37 -

Erec Reverse Recovery Energy

IF = 20 A, dIF/dt = 200 A/µs

TC = 175oC - 153 - µJ

Trr Diode Reverse Recovery TimeTC = 25

oC - 101 -ns

TC = 175oC - 238 -

Qrr Diode Reverse Recovery ChargeTC = 25

oC - 343 -nC

TC = 175oC - 1493 -

FGH40T65SHDF —

650 V, 40 A Field Stop Trench IG

BT

©2014 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH40T65SPHDF Rev. C1

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case Characteristics Temperature at Variant Current Level

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

0 1 2 3 4 5 60

30

60

90

12020 VTC = 175

oC

15 V

12 V

10 V

VGE = 8 V

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V]0 1 2 3 4 5 6

0

20

40

60

80

100

12020 V

TC = 25oC

15 V

12 V

10 V

VGE = 8 V

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V]

-100 -50 0 50 100 150 2001

2

3

80 A

40 A

IC = 20 A

Common Emitter

VGE = 15 V

Collector-Emitter Voltage, VCE [V]

Case Temperature, TC [oC]

0 1 2 3 40

30

60

90

120

Common Emitter

VGE = 15 V

TC = 25oC

TC = 175oC

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V]

4 8 12 16 200

4

8

12

16

20

IC = 20 A

40 A

80 A

Common Emitter

TC = 25

oC

Collector-Emitter Voltage, VCE [V]

Gate-Emitter Voltage, VGE [V]

4 8 12 16 200

4

8

12

16

20

80 A

IC = 20 A 40 A

Common Emitter

TC = 175oC

Collector-Emitter Voltage, VCE [V]

Gate-Emitter Voltage, VGE [V]

FGH40T65SHDF —

650 V, 40 A Field Stop Trench IG

BT

©2014 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH40T65SPHDF Rev. C1

Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics

Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs. Gate Resistance Gate Resistance

Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs. Gate Resistance Collector Current

1 1010

100

1000

10000

Common Emitter

VGE = 0 V, f = 1 MHz

TC = 25oC

Cres

Coes

Cies

Capacitance [pF]

Collector-Emitter Voltage, VCE [V]30 0 20 40 60 80

0

3

6

9

12

15Common Emitter

TC = 25oC

300 V

400 V

VCC = 200 V

Gate-Emitter Voltage, VGE [V]

Gate Charge, Qg [nC]

0 10 20 30 40 505

10

100

Common Emitter

VCC = 400 V, VGE = 15 V

IC = 40 A

TC = 25oC

TC = 175oC

td(on)

tr

Switching Tim

e [ns]

Gate Resistance, RG [ΩΩΩΩ]

0 10 20 30 40 501

10

100

1000

Common Emitter

VCC = 400 V, VGE = 15 V

IC = 40 A

TC = 25oC

TC = 175oC

td(off)

tf

Switching Tim

e [ns]

Gate Resistance, RG [ΩΩΩΩ]

0 10 20 30 40 50100

1000

5000

Common Emitter

VCC = 400 V, V

GE = 15 V

IC = 40 A

TC = 25

oC

TC = 175

oC

Eon

Eoff

Switching Loss [uJ]

Gate Resistance, RG [ΩΩΩΩ]

20 40 60 805

10

100

Common Emitter

VGE = 15 V, RG = 6 Ω Ω Ω Ω

TC = 25

oC

TC = 175

oC

tr

td(on)

Switching Tim

e [ns]

Collector Current, IC [A]

FGH40T65SHDF —

650 V, 40 A Field Stop Trench IG

BT

©2014 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH40T65SPHDF Rev. C1

Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs. Collector Current Collector Current

Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

20 40 60 801

10

100

200

Common Emitter

VGE = 15 V, RG = 6 Ω Ω Ω Ω

TC = 25

oC

TC = 175

oC

td(off)

tf

Switching Tim

e [ns]

Collector Current, IC [A]

20 40 60 80100

1000

10000

Common Emitter

VGE = 15 V, R

G = 6 Ω Ω Ω Ω

TC = 25

oC

TC = 175

oC

Eon

Eoff

Switching Loss [uJ]

Collector Current, IC [A]

1 10 100 10000.1

1

10

100

300

1 ms

10 ms

DC

*Notes:

1. TC = 25oC

2. TJ = 175oC

3. Single Pulse

10 µ µ µ µs

100 µµµµs

Collector Current, Ic [A]

Collector-Emitter Voltage, VCE [V]1k 10k 100k 1M0

50

100

150

200

250

TC = 75

oC

TC = 25

oC

TC = 100

oC

Square Wave

TJ <= 175

oC, D = 0.5, V

CE = 400V

VGE = 15/0 V, R

G = 6 Ω Ω Ω Ω

Collector Current, [A]

Switching Frequency, f[Hz]

0 1 2 31

10

80

TJ = 75oC

TJ = 25oC

TC = 25oC

TC = 75oC

TC = 175oC

TJ = 175oC

Forward Voltage, VF [V]

Forw

ard Current, IF [A]

0 10 20 30 40 500

3

6

9

12

15

TC = 25oC

TC = 175oC

di/dt = 100 A/µµµµs

di/dt = 200 A/µµµµs

di/dt = 100 A/µµµµs

di/dt = 200 A/µµµµs

Reverse Recovery Currnet, Irr [A]

Forward Current, IF [A]

FGH40T65SHDF —

650 V, 40 A Field Stop Trench IG

BT

©2014 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH40T65SPHDF Rev. C1

Typical Performance Characteristics

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

Figure 21. Transient Thermal Impedance of IGBT

Figure 22. Transient Thermal Impedance of Diode

0 10 20 30 400

100

200

300

400

500

TC = 25oC

TC = 175oC ---

di/dt = 200 A/µµµµs di/dt = 100 A/µµµµs

Reverse Recovery Tim

e, t rr [ns]

Forward Current, IF [A]

0 10 20 30 400

500

1000

1500

2000

TC = 25oC

TC = 175oC

di/dt = 200 A/µµµµsdi/dt = 100 A/µµµµs

Stored Recovery Charge, Q

rr [nC]

Forward Current, IF [A]

10-5

10-4

10-3

10-2

10-1

100

1E-3

0.01

0.1

1

0.01

0.02

0.1

0.05

0.2

single pulse

Therm

al Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC

0.5

t1

PDM

t2

10-5

10-4

10-3

10-2

10-1

100

1E-3

0.01

0.1

1

5

0.01

0.02

0.1

0.05

0.2

single pulse

Therm

al Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC

0.5

t1

PDM

t2

FGH40T65SHDF —

650 V, 40 A Field Stop Trench IG

BT

©2014 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGH40T65SPHDF Rev. C1

Mechanical Dimensions

Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-

ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-0A3

FGH40T65SHDF —

650 V, 40 A Field Stop Trench IG

BT

©2014 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FGH40T65SHDF Rev. C1

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVERELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANYPRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTYTHEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THEEXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life,and (c) whose failure to perform when properly used in accordance withinstructions for use provided in the labeling, can be reasonablyexpected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to causethe failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FPS™

F-PFS™FRFET®

Global Power ResourceSM

GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louderand Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®

OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™Sync-Lock™

®*

TinyBoost®

TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*µSerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In DesignDatasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full ProductionDatasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In ProductionDatasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of theirparts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplication, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from theproliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized FairchildDistributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized FairchildDistributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range ofup-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address andwarranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild iscommitted to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATIONN. American Technical Support: 800−282−9855 Toll FreeUSA/Canada

Europe, Middle East and Africa Technical Support:Phone: 421 33 790 2910

Japan Customer Focus CenterPhone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:Literature Distribution Center for ON Semiconductor19521 E. 32nd Pkwy, Aurora, Colorado 80011 USAPhone: 303−675−2175 or 800−344−3860 Toll Free USA/CanadaFax: 303−675−2176 or 800−344−3867 Toll Free USA/CanadaEmail: [email protected]

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your localSales Representative

© Semiconductor Components Industries, LLC