Arnaud Bournel, Comics meeting, April 23 2013

2nd Ukrainian-French semiconductor-on-insulator workshop7th International workshop functional nanomaterials and devicesApril 8-11 2013, Kyiv, Ukraine

Arnaud Bournel, Comics meeting, April 23 2013

Where?

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2 814 258 habitants en 2012

More precisely

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Cultural center Djerelo

Some pictures…

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… with snow

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For JS Martin

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Cathedral St. Michael

Who?

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Organized by•F. Balestra (IMEP-LAHC Grenoble, France)•D. Flandre (ICTeam, Univ. catholique de Louvain, Belgique)•A. N. Nazarov (Inst. Semicond. Phys., Kiev, Ukraine)

55 participants from 15 countries (Ukraine, Russia, France, Austria, Germany, Ireland, United Kingdom, Belgium, Poland, Brazil…)

What?

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F. Balestra IMEP-LAHC/ Sinano Institute, Grenoble, France

Challenges and solutions for very low energy computation→ TFET is great, carbon is bad

K. Bourdelle SOITEC, Bernin, France Engineered substrates for advanced CMOS technology nodes and More-than-Moore applications→ XOI for electronics an photonics, smart stackingTM for MEMS & CMOS (3D integration: oxide-oxide, Cu-Cu, through-silicon via or TSV)

C. Fenouillet-Beranger1,2 et al.

1) CEA-LETI MINATEC- Grenoble, France2) STMicroelectronics, Crolles, France

CMOS performance enhancement with FDSOI technology→ ultrathin body and buried oxide: TBOX = 25 nm for 28 nm-node, TSi = 6.5 nm for 14 nm-node)Cf. Grenouillet @IEDM 2012Ground plane, hybrid integration with bulk…

V. Kilchytska et al. ICTEAM Institute, UCL, Louvain-la-Neuve, Belgium*CEA-Leti, MINATEC Grenoble, France

Perspectives of UTBB FD SOI for analog and RF applications → few works on the subject…Effect of self heating, electrostatic coupling with the substrate through the BOX, influence of ground plane, fringe effect du to reduced widthfT = 160 GHz & fmax = 140 GHz @ LG = 30 nm. But intrisically fT = 700 GHz Cf. Kilchytska & Makovejev SSE 2012

What?

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Y.M. Georgieva et al. aTyndall National Institute, UCC Cork, IrelandbTyndall National Institute, Cork, IrelandcImperial College London, London, UK

Silicon and germanium junctionless nanowire transistors for sensing and digital electronics applications→ Towards autonomous microfluidic sensors: chemical species as top gate in the subthreshold regime thanks to a backgateRIE etching for defining NW: low roughness (0.8-1.6 nm, width down to 10 nm)Autonomy? VBG = 0 V if possible….

V. Sverdlov, S. Selberherr Institute for Microelectronics, TU Wien, Austria

Silicon spintronics and its applications→ A review… As I was young, but Si instead of III-V.Spin relaxation, spin accumulation, spin-FET (still a dream….), single spin readout in a Si SET,Nitrogen-Vacancy centers in diamond? Van de Sar, Nature 484

A. Orlikovsky, V. Vyurkov, S. Filippov, I. Semenikhin

Institute of Physics and Technology, RAS, Moscow, Russia

Quantum noise in nano-transistors→ Model of quantum excess noise at finite temperature thanks to Landauer-Buttiker approach, cf. Vyurkov SSE 2012

P.G.D.Agopian 1,2, J.A.Martino 1 et al.

1LSI/ PSI/USP - University of Sao Paulo, SP, Brazil 2Centro Universitario da FEI, SBC, Brazil3Imec, Leuven, Belgium4E.E. Dept., KU Leuven, Belgium

Early voltage and transistor efficiency of pTFET compared to pFinFET tri-gate devices→ Fabrication on the same wafer (N+ source instead of P+ source)10× higher gm/ID, 2× higher Early voltage, +30 dB of voltage gain in TFETBut Ion = 0.6 nA vs. 1.1 mA

What?

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C. Teichert Institute of Physics, Leoben, Austria Atomic-force microscopy based diagnostics of functional nanomaterials→ A good review, no device

M. Phaner Université de Lyon, Ecully, France Growth of Pentacene thin films for Organic Field Effect Transistors: an AFM study→ Influence of thickness on the organization of the pentacene grains/islands30 nm: the best. Then decrease of mobility due to access resistance (conduction in the first layers)

T. Rudenko1

A. Nazarov1, .R. Yu2, S. Barraud3 et al.

1Lashkaryov ISP, NASU, Kiev, Ukraine2Tyndall National Institute, UCC Cork, Ireland3CEA-LETI, MINATEC, Grenoble, France

On mobility behavior in high doped junctionless nanowire MOSFETs→ Doping larger than 1019 cm-3

Better gate control leads to higher electron density, then to stronger screening of doped impurities and finally to a (slightly) higher mobility….

V.P. Popov, I.E. Tyschenko, *A.N. Nazarov, **T.S. Ávila, **P.L. Grande

Rzhanov ISP, SB RAS, Novosibirsk, Russia*Lashkaryov ISP, NASU, Kiev, Ukraine**Institute of Physics, UFRGS, Porto Alegre, Brazil

Carrier transport in few nanometer SOI layers with Ge atoms incorporated from BOX→ 2 nm-thick SiGeOI: Ge implantation in SiO2, Si bonded on top, H+ mplant for smart cut, annealing…2-3× higher hole mobilityBenefice / Ge condensation? Ultrathin films…

What?

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P.K. Hurley1, É. O’Connor1, V. Djara1, J. Lin1, S. Monaghan1, I. Povey1,M. Pemble1, Y.Y. Gomeniuk2,

K. Cherkaoui1

1Tyndall National Institute, UCC Cork, Ireland2Lashkaryov ISP, NASU, Kiev, Ukraine

Investigating the electronic properties of the high-k/InGaAs MOS system

L.Khomenkova1,2, X. Portier1, A. Slaoui3,

F. Gourbilleau1

1CIMAP, Caen Cedex 4, France2Lashkaryov ISP, NASU, Kyiv, Ukraine3InESS, ULP/CNRS, Strasbourg, France

Charge trapping in hafnium silicate films with modulated composition and enhanced permittivity

Y.Y. Gomeniuk1, et al.

1Lashkaryov ISP, NASU, Kyiv, Ukraine2Tyndall National Institute, UCC Cork, Ireland

Conduction-band offsets in Pd/Al2O3/InGaAs MOS structure

What?

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M. Lemme1,2 1University of Siegen, Germany 2KTH Royal Institute of Technology, Kista, Sweden

The potential of graphene devices for More than Moore applications→ Hot electron vertical transistor, with Al2O3 and SiO2 insulators betwwen emitter and base or base and collector: Mehr IEEE EDL 2012, Vaziri SSE 2013 & NanoLett 2013. THz feasible in theory…Bandstructure changes induced by strain for piezoresistive sensors (collab with Palestri)

M.V. Strikha Lashkaryov ISP, NASU, Kyiv, Ukraine Non-volatile memory of new generation and ultrafast IR modulators based on graphene on ferroelectric substrate

A.N. Nazarov1 et al. 1Lashkaryov ISP, NASU, Kyiv, Ukraine2Rzhanov ISP, SB RAS, Novosibirsk, Russia

Graphene layers fabricated from Ni/carbon-rich a-SiC bilayer precursor

D. Svintsov1, V. Vyurkov1, A. Orlikovsky1, V. Ryzhii2, T. Otsuji2

1Institute of Physics and Technology, RAS, Moscow, Russia 2RIEC, Tohoku University, Sendai, Japan

All-graphene tunnel field-effect transistor→ Schottky source-drain, cf. Sze 1968

What?

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D. Flandre ICTEAM Institute, UCL, Louvain-la-Neuve, Belgium

Nanopower sensing with nanoelectronics

G. Ardila, A. Kaminski-Cachopo, M. Pala, A. Cresti, L. Montès, R. Hinchet, J. Michallon, M. Daanoune, M. Mouis

IMEP-LAHC Minatec, CNRS-Grenoble INP, UJF, France

Towards self-powered systems: using nanostructures to harvest ambient energy

S. Hall, N. Sedghi, I.Z. Mitrovic, J.F. Ralph, Y. Huang

University of Liverpool, UK Solar energy harvesting using THz electronics

A.G. Ulyashin SINTEF Material and Chemistry, Oslo, Norway

Nanostructures and nanotechnologies for Si based photovoltaics

My talk

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Non linear effect in graphene devicesA. Bournel, V. Hung Nguyen, A. Alarcon, S. Berrada, D. Van Nam, J. Saint Martin, D. Querlioz, P. Dollfus

•Transport properties in graphene and GFET (pseudo saturation…)•Resonant and non linear effects in graphene bilayer•Esaki-like PN tunnel diodes based on graphene monolayer