Application of Six Sigma Methodology to Optimize the Performance of the Inter-Metal Dielectric Process

Application of Six Sigma Methodology to Optimize the Performance of the Inter-Metal Dielectric Process

Application of Six Sigma Methodology to Optimize the Performance of the Inter-Metal Dielectric ProcessAuthors: Chao-Ton Su, Chia-Jen Chou, and Li-Fei ChenSources: IEEE Transactions on Semiconductor Manufacturing, Vol. 22, No. 2, pp. 297-304Date: 12/27/20101OutlineIntroductionCase studyConclusionsIntroductionBackground

(inter-metal dielectric, IMD)(step coverage)

(integrated circuit, IC)

IntroductionMotivation

4IntroductionIMD

(line resistance, R)(parasitic capacitance, C)R/C

(open circuit)

5IntroductionObjective

IMD

Case study

IMD(IMD performance improvement project)

IMDIMDCase studyDefine Phase

(thin film module)(quality assurance)(product engineering integration engineers)(process owners)

IMD

(CTQs)

Case study(dies)(defects per unit, DPU)

DPU0.045(cost of poor quality, COPQ)DPU0.03

IMD(gap-fill ability) (VRDB)(fluorine contained)

CTQs9Case study

(A/R)3:15:1

3:1

Case study(voltage-ramping stress test, VRDB)

VRDB

VRDBCase studyIMD(Fluorosilicate glass, FSG)FSG(dielectric constant)3.93.5

12Case studyIMD(silicon rich oxide, SRO liner)(Fluorosilicate glass, FSG)1(Fluorosilicate glass, FSG)2(undoped silicon glass, USG)

CMPCMP12 &(Chemical Mechanical Polishing, CMP)(Global Planarization)SRO liner FSG113Case studyMeasure Phase

CTQVRDB

Case studyGauge R&R7.02%8.54%

VRDBIndividuals and Moving Range chart (I-MR)VRDB8.33

30 (P-Value: 0.895)Cpk0.79(VRDB)Cpk0.76Cpk0.86

Cpk05%GRR