Applications of Conformal Mappings for Electromagnetics Yuya Saito Electrical and Computer Engineer
Nov 24, 2014
Applications of Conformal Mappings for Electromagnetics
Yuya SaitoElectrical and Computer Engineering
Introduction
Modern applications of conformal mapping
•Heat Transfer
•Fluid FlowHydrodynamics and Aerodynamics
•ElectromagneticsStatic field in electricity and magnetism, Transmission
line and Waveguide, and Smith Chart etc
Transient Heat Conduction
Conformal Mappings for Electromagnetics
u=constant ( blue line ) ⇔ Electrical Flux
v=constant ( red line) ⇔ Magnetic Field (or electrical
potential)
Conformal Mapping : z=f(w) z, w: complex values
z-plane w-plane
⇔
iy z=x+jy v1
x
v2
iv w=u+jvv1
uv2
Mapping a region in one complex plane onto another complex plane
For Electromagnetics
Capacitance
a b1
a1
d1
εr
V
Electrical Flux
1
11
dbaC r
1
1
daC r
Two dimensional problem if b1=1
Coaxial Cable
E field
H field
I
abC r
/ln2
r
VQC
the capacitance per unit length
dvsdEV vs
)( 0
Gauss’s Lawa b
1
23
4
5
6 7
8
E field
H field
x
yZ-plane
123
45
6 7 8
a b
LogZW Mapping Function
iLogr
rθ
W-plane
1
2
3
4
5
6
7
8
π
2π
Logau
0
Logbu
0ar br
u
v
abC r
/ln2
1
1
daC r
a1
d1
Conformal Mapping for the Coaxial Cable
・
= u + iv
Transmission Lines for Microwave Circuits
Transistor Resistor Substrate
Ground Plane
Center conductor
Air Bridge
εr
Coplanar Waveguide Slot lineMicrostrip Line
Center conductor
Ground
Coplanar Waveguide (CPW)
Center ConductorGround Plane
Substrate
εr
Current
How can we derive the capacitance of unit per length?
x
yair
εrCross section
Unit length
Schwarz-Christoffel Transformation
Schwarz-Christoffel Transformation
w-planeZ-plane
x
y
P1P2
P3P4
P5
α1
α2
α3α4
α5
u
v
・X’1 ・ ・・ ・
X’2 X’3 X’4 X’5
(P1) (P2) (P3) (P4) (P5)
1)/('1)/('2
1)/('1 )()()( 21 n
nxwxwxwAdwdz
∞+∞-
Assumption•Ground plane is long enough
•Substrate thickness is large enough
•The thickness of the metal is small enough
+∞x
y
-∞
air
εr
-i∞
SC transformation for CPWs
SC transformation
Metal thickness is small enough
Substrate
+∞x
y
-∞
air
εr
-i∞
SC Transformation for CPWs
Symmetry
E-field
Parallel plate capacitor!!
u
v π/2 radπ/2 rad
air
① ③②④
①
②③
④
⑤
⑤
⑥
⑥
π/2 radπ/2 rad
①④
③∞∞
⑤
⑥
②
Z-planeSC transfrom
u
ivW-plane
SC Transformation for CPWs
u1=K(k)
au
bzaz
Adzdw0 22220 ))((
1
)(1 kKu
))(( 2222 bzaz
Adzdw
where A :constant, k=a/b
First kind complete elliptic function
+∞x
y
-∞air
a-a b-b
Z-plane
0
)(kK
u
vW-plane
SC Transformation for CPWs
u1+iv1=K(k)+iK(k’)
K’(k)
)'(1 kKv +∞x
y
-∞air
a-a b-b
Z-plane
)'()(2
1
1
kKkK
vuC rr
where A :constant, k’2=1-k2
The substrate case is the same as the air region case
b
a
ivu
u bzaz
Adzdw))(( 2222
11
1
Assumption•Ground plane is long enough •Substrate thickness is large enough
•The thickness of the metal is small enough+∞
x
y
-∞
air
εr
-i∞
Metal thickness is small enough
Substrate
Can we still use Conformal Mapping???
Consideration of the assumption
Finite length of the ground plane
y+∞
x-∞
air
a-a b-b c-c
Z-plane y+∞
xa b cSymmetry
i∞
+∞t1 t2 t3
Mapping Function2zt
0
21 at 2
2 bt 23 ct
-∞
T-plane
① ② ③ ④ ⑤⑥
u
v π/2 radπ/2 rad
②
③④
⑤⑥
π/2 radπ/2 rad
① ②③
④
⑤⑥
①
SC Transformation
-i∞Substrate Substrate
Substrate
air
Z-plane
Finite thickness of the substrate
y+∞
x-∞
air
a-a b-bh
ih
hat
2sinh1
hbt
2sinh2
Mapping Function
hzt
2sinh
-i∞
t1 t2 +∞-∞ -t1-t2
T plane W plane
SC Transformation
u
v
Substrate
Air region is the same as previous way
Finite thickness of the metal
+∞x
y-∞
airZ-plane
Substrate
z1
z2 z3
z4z5
z6z7
z8
+∞-∞air
W-plane
w1・・・・・・・・ w 2 w 3w 4w 5w6w7w8
η1・ ・
・・・・
・・ η2
η3η4η5η6
η7 η8
η-plane
SC Transformation
SC Transformation
Summary
•Show the derivation of the capacitance for the EM (RF) devicesex: phase velocity, characteristic impedance, and attenuation loss
•Conformal mapping is powerful way to get the analytical solutions!!
constrain•Only 2 dimensional problem
•Some assumptions are needed
•Limitation of mapping functions
Mapping Function
yZ-plane
0x
vW -plane
0u
nZW
n/
yZ-plane
0x
vW -plane
0u2/
2ZW n=2
Mapping Function
W-plane
0 ・ ・・・
・・
D ECB
I
HG
・
uvyZ-plane
x0 ・ ・・・
・ ・・
D ECB
I HG
Mapping Function
hZW
2sinh
ih
i∞
a1 a2
d1
a
Must be Uniform
1daC r
1
3
1
2
1
1
da
da
da
rrr
a
d1
Uniform E field Non Uniform E field
1da
r
321 CCCC
Non Uniform E field in the capacitor
a3
Strong field Strong fieldWeek field