T.Takahashi, Hiroshima Conf., 2004 Application of CdTe for the NeXT mission Tadayuki Takahashi ISAS / JAXA, Japan NeXT mission ~2010- T. Takahashi, K. Nakazawa, S. Watanabe, G. Sato, T. Mitani, T. Tanaka, K. Oonuki, K. Tamura, H. Tajima, M. Nomachi, Y. Fukazawa, M. Kokubun and the HXI/ SGD team HXI & SGD X-ray X-ray
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T.Takahashi, Hiroshima Conf., 2004
Application of CdTe for the NeXT mission
Tadayuki TakahashiISAS / JAXA, Japan
NeXT mission
~2010-
T. Takahashi, K. Nakazawa, S. Watanabe, G. Sato, T. Mitani,T. Tanaka, K. Oonuki, K. Tamura, H. Tajima, M. Nomachi, Y. Fukazawa, M. Kokubun and the HXI/ SGD team
HXI & SGD
X-ray
X-ray
T.Takahashi, Hiroshima Conf., 2004
100 keVCdTe/CZT detectors
• Wide band gap (Eg:1.5 eV, e:4.4 eV)⇒ Allows room temperature operationHigh resistivity ~ 109-11 Wcm
• High Z semiconductor (ZCd = 48, ZTe = 52), r=5.9 g/cm3
• Poor charge transport properties (recombination and trapping)• Crystal NON-Uniformity and Size
-> Significant Progress in 1990’s(see review by Takahashi & Watanabe, IEEE NS48, 4, 950, 2001)(see Poster by G. Sato, CZT detectors for the Swift mission)
VERY
ATT
RACTI
VE
CdTe vs CZT(CdZnTe) : advantages/disadvantages
T.Takahashi, Hiroshima Conf., 2004
Recent Achievement
-20 deg (Amptek’s discrete Amp) Digital Movie of Analog Clock (by ACRORAD)
CdTe single crystal (ACRORAD)
5cm
200 micron
Room Temperature
ISAS
ISAS
Advantage
T.Takahashi, Hiroshima Conf., 2004
Gamma-ray40 layer CdTe Stack (Watanabe et al. 2002)
137Cs
FWHM2.1 keV
662keV
Takahashi et al., IEEE N.S. 48, 3(2001)
Medical application (see poster by ACRORAD)ISAS ISAS
Prof. Hayashi, Chiba U.
T.Takahashi, Hiroshima Conf., 2004
Total weight : 1700 kg
The NeXT MissionSuper Mirror ( 0.5-80 keV )
Hard X-rayImager
focal length12 m
30’’ HPD
E>10 keV
NeXT Mission Proposal, ISAS, 2004
Nagoya U./ISAS
T.Takahashi, Hiroshima Conf., 2004
Wide band X-ray Imager- A solution for the detector
to cover 0.3 - 80 keV -
Shield & Window
Transparent X-ray CCDX-ray
Hard X-ray
CdTe Pixel Detector
BGO Active ShieldSi Strip Detector(Option)
APDHXI
SXI
X-ray CCD for soft X-ray
CdTe pixel for Hard X-ray
(Takahashi et al. NIM A 436 , New Astronomy Reviews, 48, 2004)
NeXT Mission Proposal, ISAS, 2004
T.Takahashi, Hiroshima Conf., 2004
CdTe Hard X-ray Imager (HXI)
• CdTe PixelGoal
2cm
3cm 6 arcmin
3 arcmin
Thickness : 0.5mm-1.0mmDetector Area : 2cm x 3cmPixel size: 250 µm x 250 µm
WXICCD(see Poster by Tsuru et al.)
CdTe0.5mm
1mm
Si-CCD0.3mm
BGO w APD(see PosterbyKataoka/Fukazawa)
T.Takahashi, Hiroshima Conf., 2004
Bump Technologyfor the CdTe pixel detector
CdTe
ASIC
underfill
50 micron
ISAS&MHI patent applying(Takahashi et al. IEEE NS. 2001)
X-ray/Gamma-ray
Electrode
CdTe/CdZnTe
ASIC Support board
• In/Au stud bump•Good for CdTe/CZT material (soft)• Mechanical support by under-fill• Thermal Cycle (-55 deg …+125 deg)
200µm pixels(ISAS/Bonn U.)
Stud bump
T.Takahashi, Hiroshima Conf., 2004
What we need is…
2mm
2dim version(200µm pitch)
16x16
12x12
CdTe Pixel DetectorVLSI based on deep submicron CMOSTechnology