AP100P01D -15V P-Channel Enhancement Mode MOSFET AP100P01D Rve1.0 臺灣永源微電子科技有限公司 1 Description The AP100P01D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -15V ID =-100 A RDS(ON) < 3.5mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP100P01D AP100P01D XXX YYYY 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -15 V VGS Gate-Source Voltage ±12 V ID Drain Current – Continuous (TC=25℃) -100 A Drain Current – Continuous (TC=100℃) -54 A IDM Drain Current – Pulsed 1 -360 A PD Power Dissipation (TC=25℃) 41.67 W Power Dissipation – Derate above 25℃ 0.33 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction to ambient 62 ℃/W RθJC Thermal Resistance Junction to Case 3 ℃/W TO-252-3L
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AP100P01D -15V P-Channel Enhancement Mode MOSFET
AP100P01D Rve1.0 臺灣永源微電子科技有限公司
1
Description
The AP100P01D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = -15V ID =-100 A
RDS(ON) < 3.5mΩ @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID Pack Marking Qty(PCS)
AP100P01D AP100P01D XXX YYYY 2500
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Symbol Parameter Rating Units
VDS Drain-Source Voltage -15 V
VGS Gate-Source Voltage ±12 V
ID Drain Current – Continuous (TC=25℃) -100 A
Drain Current – Continuous (TC=100℃) -54 A
IDM Drain Current – Pulsed1 -360 A
PD Power Dissipation (TC=25℃) 41.67 W
Power Dissipation – Derate above 25℃ 0.33 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
RθJA Thermal Resistance Junction to ambient 62 ℃/W