MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 336 Amorphous Silicon Technology—1994 Symposium held April 4-8, 1994, San Francisco, California, U.S.A. EDITORS: Eric A. Schiff Syracuse University Syracuse, New York, U.S.A. Michael Hack Xerox PARC Palo Alto, California, U.S.A. Arun Madan MV Systems Inc. Golden, Colorado, U.S.A. Martin Powell Philips Research Laboratories Surrey, United Kingdom Akihisa Matsuda Electrotechnical Laboratory Tsukuba, Japan IMIRISI MATERIALS RESEARCH SOCIETY Pittsburgh, Pennsylvania
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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 336
Amorphous Silicon Technology—1994
Symposium held April 4-8, 1994, San Francisco, California, U.S.A.
EDITORS:
Eric A. Schiff
Syracuse UniversitySyracuse, New York, U.S.A.
Michael Hack
Xerox PARC
Palo Alto, California, U.S.A.
Arun Madan
MV Systems Inc.
Golden, Colorado, U.S.A.
Martin Powell
Philips Research Laboratories
Surrey, United Kingdom
Akihisa Matsuda
Electrotechnical LaboratoryTsukuba, Japan
IMIRISI
MATERIALS RESEARCH SOCIETY
Pittsburgh, Pennsylvania
Contents
PREFACE
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
PART I: DEPOSITION STUDIES, PLASMA AND FILMS
* RELATIONSHIP BETWEEN PLASMA CHEMISTRY AND ELECTRON
TRAPPING RATE IN PLASMA-DEPOSITED SILICON NITRIDE
D.L. Smith 3
* CONTROL OF THE ELECTRON AND HOLE DRIFT MOBILITIES IN
PLASMA DEPOSITED a-Si:H
G. Ganguly and A. Matsuda 7
PROGRESS IN LARGE AREA SELECTIVE SILICON DEPOSITION FOR
TFT/LCD APPLICATIONS
J.H. Souk and G.N. Parsons 19
A LOW TEMPERATURE PLASMA-ASSISTED DEPOSITION PROCESS FOR
MICROCRYSTALLINE THIN FILM TRANSISTORS, TFTs
S.S. He and G. Lucovsky 25
EFFECTS OF INTERMITTENT DEPOSITION ON THE DEFECT DENSITY
IN a-Si:H
T. Kamei, N. Hata and A. Matsuda 31
AMORPHOUS TO POLYSILICON GROWTH AND "SUNFLOWER EFFECT"
OBSERVED IN CATALYTIC-CVD
H. Matsumura, Y. Hosoda and S. Furukawa 37
FACTORS INFLUENCING THE QUALITY OF a-Si:H FILMS DEPOSITED
BY THE 'HOT WIRE' TECHNIQUEE. C. Molenbroek, A.H. Mahan, E.J. Johnson and A.C. Gallagher 43
NANOSCALE STUDY OF THE HYDROGENATED AMORPHOUS SILICON
SURFACE
D.M. Tanenbaum, A. Laracuente and A.C. Gallagher 49
SILICON OXYCARBIDE MICROCRYSTALLINE LAYERS PRODUCED BY
SPATIAL SEPARATION TECHNIQUESR. Martins, I. Ferreira, E. Fortunato and M. Vieira 55
* Invited Paper
v
EXCIMER LASER ANNEALING OF AMORPHOUS SILICON FILMS
J. Viatella, R.K. Singh and R.P.S. Thakur
HIGH-GROWTH RATE a-Si:H DEPOSITED BY HOT-WIRE CVD
P. Brogueira, V. Chu and J.P. Conde
IN SITU ELLIPSOMETRIC MONITORING OF LOW TEMPERATURE
GROWTH OF POLY-Si FILMS BY RF PLASMA CVD
T. Shirafuji, Y. Hayashi and K. Tachibana
VHF COAXIAL HELIX PLASMA SOURCE FOR a-Si:H
U. Stephan, J. Kuske and K. Schade
IN SITU ELLIPSOMETRIC STUDY OF THE DEPENDENCE OF a-Si:H
FILM GROWTH ON SUBSTRATE PROPERTIES AND IGNITION
PROCEDURES
U.I. Schmidt, W. Herbst, B. Schroder and H. Oechsner
IMPROVEMENT OF FILM QUALITY OF a-Si:H DEPOSITED BY
PHOTO-CVD USING SiH2Cl2T. Oshima, K. Yamaguchi, A. Yamada, M. Konagai and K. Takahashi
AMORPHOUS SILICON FILMS FROM DICHLOROSILANE AND
HYDROGEN
J.N. Bullock and S. Wagner
CYCLIC CVD FOR PREPARATION OF SILICON FILMS OF
ADJUSTABLE STRUCTURE
S. Koynov, S. Grebner, T. Fischer and R. Schwarz
OPTIMIZATION OF A DUAL-MODE RF/MICROWAVE PLASMA FOR
AMORPHOUS THIN FILM DEPOSITION
R. Etemadi, O. Leroy, B. Drevillon and C. Godet
MORE INSIGHT INTO THE VHF-GLOW-DISCHARGE BY PLASMA
IMPEDANCE MEASUREMENTS
U. Kroll, Y. Ziegler, J. Meier, H. Keppner and A. Shah
CHARACTERIZATION OF AMORPHOUS SILICON DEPOSITED AT
HIGH RATE BY HELIUM DILUTION PECVD AND USED FOR
APPLICATIONS IN RADIATION DETECTION
A. Hie, T. Pochet, F. Foulon and B. Equer
vi
PART II: FUNDAMENTAL STUDIES AND DEFECTS
STRUCTURAL RELAXATION AND STRUCTURAL MEMORY AT
AMORPHOUS SILICON DANGLING BONDS
H.M. Branz and P.A. Fedders
DEFECT-RELATED PHOTOLUMINESCENCE OF a-Si:H
I. Ulber, A. Barth, W. Fuhs and H. Mell
A UNIFIED DESCRIPTION OF THE DENSITY OF STATES FOR
HYDROGEN AND ELECTRONS IN AMORPHOUS SILICON
S.C. Deane and M.J. Powell
ON MODELING TRIVALENT DANGLING BONDS WITH BIVALENT
LEVELS
V. Suntharalingam and H.M. Branz
PHYSICS OF THE MEYER-NELDEL RULE IN AMORPHOUS SILICON
H.M. Branz, A. Yelon and B. Movaghar
TOWARD A PRACTICAL MODEL OF a-Si:H DEFECTS IN INTENSITY-
TIME-TEMPERATURE SPACE
D. Caputo, J. Bullock, H. Gleskova and S. Wagner
MOLECULAR DYNAMICS STUDIES OF DIAMONDLIKE AMORPHOUS
CARBON
P.A. Fedders and D.A. Drabold
MOLECULAR DYNAMICS SIMULATION OF HYDROGENATED
AMORPHOUS SILICON WITH TERSOFF POTENTIAL
T. Ohira, T. Inamuro and T. Adachi
STUDY OF AMORPHOUS SILICON NITRIDE FILMS BY BRILLOUIN
SPECTROSCOPY
G. Carlotti, G. Socino, H. Xia, Z.F. Li, W. Zhang, X.X. Qu, K.J. Chen
and X.K. Zhang
NON-RADIATIVE RECOMBINATION IN a-Si:H
M. Schubert, R. Stachowitz, R. Saleh and W. Fuhs
MONTE CARLO MODELLING OF ELECTROPHOTOGRAPHIC DARK
DISCHARGE
S.J. Elmer, J.M. Marshall, R.A.C.M.M. van Swaaij, J. Bezemer and
A.R. Hepburn
Invited Paper
vii
EVIDENCE OF ENERGY RELAXATION OF CHARGED DEFECTS IN
AMORPHOUS SILICON VIA FORWARD BIAS CAPACITANCE
MEASUREMENTS
D. Caputo, G. de Cesare, G. Masini, F. Palma, A. Pastore and M. Tucci
EXPLORATION OF DEFECT RELAXATION DYNAMICS IN
HYDROGENATED AMORPHOUS SILICON USING TEMPERATURE
SWITCHING EXPERIMENTS
A. Gardner and J.D. Cohen
MOLECULAR DYNAMICS STUDIES OF DEFECT MOTION IN a-Si:H
P.A. Fedders
NEW APPROACHES TO MOLECULAR DYNAMICS SIMULATIONS
OF a-Si:H
Q. Li, R. Biswas and CM. Soukoulis
PART III: HYDROGEN'S ROLE AND METASTABILITY
LIGHT INDUCED DEFECTS IN a-Si:H, TEMPERATURE DEPENDENCE
OF THEIR CREATION AND ANNEAL AND THEIR EFFECT ON
PHOTOCARRIER LIFETIME
P. Stradins, H. Fritzsche and M.Q. Tran
FABRICATION OF HIGHLY STABLE a-Si:H FROM CHLORINATED
PRECURSORS
M. Azuma, T. Yokoi and I. Shimizu
COMPARISON OF DARK AND LIGHT-INDUCED ANNEALING OF
METASTABLE DEFECTS IN a-Si:H
H. Gleskova, M. Nakata and S. Wagner
THE STAEBLER-WRONSKI EFFECT AND THE THERMAL
EQUILIBRATION OF DEFECT AND CARRIER CONCENTRATIONS
R.M.A. Dawson, CM. Fortmann, Y.M. Li and C.R. Wronski
METASTABLE DEFECT KINETICS IN HYDROGEN PASSIVATED
POLYCRYSTALLINE SILICON
N.H. Nickel, R.A. Street, W.B. Jackson and N.M. Johnson
EXPLANATION OF LIGHT-ENHANCED ANNEALING OF DEFECTS IN
AMORPHOUS SILICON
D. Redfield and R. Bube
RECOVERY PROCESS FOR LIGHT-SOAKED a-Si:H
Q. Zhang, H. Takashima, J.-H. Zhou, M. Kumeda and T. Shimizu
Invited Paper
viii
NEW MODEL FOR LOCAL H-ATOM BONDING RE-ARRANGEMENTS
ASSOCIATED WITH THE STAEBLER-WRONSKI EFFECT IN a-Si:H AND
a-Si.H-BASED ALLOYS
G. Lucovsky, M.J. Williams, S.M. Cho, Z. Jing and J.L. Whitten 275
METASTABILITY UNDER HIGH-INTENSITY LIGHT OF DEVICE-
QUALITY He-DILUTED, H2-DILUTED AND STANDARD a-Si:H
FILMS DEPOSITED BETWEEN 50°C AND 350°C
P. Morin and P. Roca i Cabarrocas 281
THE ROLE OF THE BAND GAP IN THE LIGHT-INDUCED
DEGRADATION OF AMORPHOUS SILICON ALLOYS
T. Unold 287
A QUANTITATIVE MODEL FOR THE METASTABLE DEFECT
CREATION IN AMORPHOUS SEMICONDUCTORS BY keV-ELECTRON
IRRADIATION
A. Scholz, B. Schroder and H. Oechsner 293
HYDROGEN BONDING AND MICROVOID STABILITY IN a-Si:H
M.J. van den Boogaard, A.C. van der Steege, W.G.J.H.M. van Sark
and W.F. van der Weg 299
METASTABLE DEFECT STUDIES IN HYDROGEN MODULATED
MULTILAYER AMORPHOUS SILICON
D. Kwon and J.D. Cohen 305
HYDROGEN BONDING CONFIGURATIONS DETERMINED FROM H
EVOLUTION
W.B. Jackson, N.H. Nickel, N.M. Johnson, F. Pardo and P.V. Santos 311
HYDROGEN DIFFUSION IN UNDOPED AND B-DOPED a-Si^C^HR. Shinar, J. Shinar, G. Subramania, H. Jia, S. Sankaranarayanan,M. Leonard and V.L. Dalai 317
HYDROGEN DIFFUSION AND SOLUBILITY IN a-Si:H
W. Beyer and H. Wagner 323
EFFECT OF LIGHT SOAKING ON THE LOCAL MOTION OF
HYDROGEN IN HDYROGENATED AMORPHOUS SILICON
P. Hari, P.C. Taylor and R.A. Street 329
GROWTH OF AMORPHOUS SILICON MATERIALS AND DEVICES
WITH IMPROVED STABILITY
V.L. Dalai, E.X. Ping, S. Kaushal, M. Leonard, M.K. Bhan and K. Han 335
ix
PART IV: OPTOELECTRONIC PROPERTIES AND TRANSPORT STUDIES
* POLARIZED ELECTROABSORPTION AND CARRIER MOBILITIES IN
AMORPHOUS SILICON ALLOYS
Y. Tsutsumi, H. Okamoto, K. Hattori and Y. Hamakawa 343
MOVING PHOTOCARRIER GRATING TECHNIQUE FOR MOBILITY AND
LIFETIME MEASUREMENTS IN AMORPHOUS SEMICONDUCTORS
M. Hundhausen, U. Haken and L. Ley 353
TRANSPORT STUDIES BY STEADY-STATE AND TRANSIENT
PHOTOCARRIER GRATING METHODS
R. Schwarz, F. Wang and D. Schuster 359
BUILT-IN POTENTIALS VIA ELECTROABSORPTION MEASUREMENTS IN
a-Si:H p-i-n SOLAR CELLS: A CRITICAL ASSESSMENT
Q. Wang, E.A. Schiff and S.S. Hegedus 365
THE INTERPRETATION OF THE CONSTANT PHOTOCURRENT METHOD
IN TERMS OF DEEP DEFECT DENSITY OF STATES IN a-Si:H
F. Siebke and H. Stiebig 371
IMPROVED ELECTRICAL AND TRANSPORT CHARACTERISTICS OF
AMORPHOUS SILICON BY ENRICHING WITH MICROCRYSTALLINE
SILICON
A. Mireshghi, W.S. Hong, J. Drewery, T. Jing, S.N. Kaplan, H.K. Lee
and V. Perez-Mendez 377
INTERPRETATION OF HIGH FIELD TRANSPORT IN a-Si:H BASED
ON THE EFFECTIVE TEMPERATURE DEFINITION
C.E. Nebel and R.A. Street 383
THE MOBILITY LIFETIME PRODUCT OF ELECTRONS AS A FUNCTION
OF TEMPERATURE AND ELECTRON CONCENTRATIONS IN a-Si:H
S. Nishida and H. Fritzsche 389
NON-GAUSSIAN NOISE STATISTICS IN UNDOPED HYDROGENATED
AMORPHOUS SILICON
G.M. Khera and J. Kakalios 395
ANALYSIS OF THE PHYSICAL ORIGIN OF THE BLUE SHIFT OF THE
OPTICAL BANDGAP OF a-Si:H BASED MULTILAYERS
N. Bernhard and G.H. Bauer 401
MODELING OF REVERSE BIAS DIFFERENTIAL CHARGE EXPERIMENTS
IN AMORPHOUS SILICON
F.R. Shapiro 407
* Invited Paper
x
CHARGED DEFECT STATE DISTRIBUTIONS OBTAINED FROM THE
ANALYSIS OF PHOTOCONDUCTIVITIES IN INTRINSIC a-Si:H FILMS
M. Gune§, R.W. Collins and C.R. Wronski
THERMAL QUENCHING AND PHOTO-ENHANCEMENT OF \n
PRODUCTS IN a-Si:H -- THE ROLE OF DANGLING BONDS AND
BAND TAILS
E. Morgado
MOBILITY-LIFETIME PRODUCTS IN GLOW DISCHARGE AND RF
SPUTTER DEPOSITED a-Si:H
M.H. Farias, A. Roche, S.Z. Weisz, H. Jia, J. Shinar, Y. Lubianiker and
I. Balberg
THE GROWTH, STEADY STATE AND DECAY OF THE PHOTOCARRIER
POPULATION AT LOW TEMPERATURES
M.Q. Tran, P. Stradins and H. Fritzsche
THE TIME-OF-FLIGHT TECHNIQUE APPLIED TO AMORPHOUS
SILICON pin SOLAR CELLS
H. Brummack, N. Bernhard, K. Eberhardt and M.B. Schubert
SPACE-CHARGE-ENHANCED POST-TRANSIT-CURRENTS IN a-Si:H
F. Schauer, A. Eliat, M. Neslidek, G.J. Adriaenssens and L.M. Stals
THERMALLY STIMULATED CONDUCTIVITY IN a-Si:H AT LOW
TEMPERATURES
M. Zhu, M.B. von der Linden and W.F. van der Weg
CHARGE AND CURRENT TRANSIENT MEASUREMENTS ON n-TYPE
HYDROGENATED AMORPHOUS SILICON IN THE RELAXATION
REGIME
U.W. Paschen, D. Kwon and J.D. Cohen
SWITCHING EFFECTS, CURRENT FLUCTUATIONS AND LATERAL
PHOTOVOLTAGE - THE ELECTRICAL APPEARANCE OF a-Si:H/METAL
MULTILAYERS
A.N. Panckow, T.P. Driisedau and U. Schmidt
PART V: MODIFIED BAND-GAP MATERIALS AND DOPING STUDIES
EFFECT OF ION DOPING TEMPERATURE ON ELECTRICAL PROPERTIES
OF APCVD a-Si
K.H. Lee, B.Y. Moon, Y.C. Chung, S.M. Lee, S.C. Kim, D. Kim and J. Jang
IN-SITU CRYSTALLIZATION AND DOPING OF a-Si FILM BY MEANS OF
SPIN-ON-GLASS
T. Sakoda, C.-D. Kim and M. Matsumura
xi
SILICON CARBON ALLOYS PRODUCED BY VHF AND CONVENTIONAL
PECVD. A COMPARISON OF THEIR PROPERTIES
G. Crovini, F. Demichelis, C.F. Pirri, E. Tresso, J. Meier, S. Dubail
and A. Shah 481
HYDROGENATED AMORPHOUS SILICON GERMANIUM ALLOY FOR
STABLE SOLAR CELLS
A. Terakawa, M. Shima, K. Sayama, H. Tarui, H. Nishiwaki and S. Tsuda 487
THE ELECTRONIC STRUCTURE OF a-Si,Ge:H ALLOYS
F. Zhong, J.D. Cohen, J. Yang and S. Guha 493
THE MECHANISM OF THE PLASMA INDUCED DEPOSITION of a-Ge
AND /xc-Ge FROM GERMANE: THE LIMITS AND POSSIBLE
ALTERNATIVES
F. Glatz, R. Konwitschny, M.G.J. Vepfek-Heijman and S. Vepfek 499
VERY HIGH-GAP TETRAHEDRALLY COORDINATED AMORPHOUS
SILICON-CARBON ALLOYS
I. Solomon and L.R. Tessler 505
STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF
<p>^ic-Si:H VERY THIN FILMS DEPOSITED BY THE VHF-GD
TECHNIQUE
R. Fluckiger, J. Meier, A. Shah, A. Catana, M. Brunei, H.V. Nguyen,
R.W. Collins and R. Carius 511
DEFECT DISTRIBUTION AND BONDING STRUCTURE IN HIGH BAND
GAP a-Si^C^H FILMS DEPOSITED IN H2 DILUTION
R. Galloni, R. Rizzoli, C. Summonte, F. Demichelis, F. Giorgis,C.F. Pirri, E. Tresso, G. Ambrosone, C. Catalanotti, U. Coscia, P. Rava,
G. Delia Mea, V. Rigato, A. Madan and F. Zignani 517
HOLE DRIFT MOBILITY IN a-Si^C^HQ. Gu, Q. Wang, E.A. Schiff, Y.-M. Li and C.T. Malone 523
MINORITY CARRIER DIFFUSION LENGTHS AND PHOTOCONDUCTIVITY
IN a-Si,N:H DEPOSITED BY REMOTE PECVD
M.J. Williams, S.M. Cho, S.S. He and G. Lucovsky 529
THERMAL MODULATED ESR FOR THE STUDY OF DEFECTS IN a-SiC:H
FILMS
F. Demichelis, F. Giorgis, C.F. Pirri, E. Tresso, L. Ravera and V. Rigato 535