AMICSA’2006 I I D D S S Integrated Systems Development S.A. A 0.13um CMOS Rad-hard proven technology with associated mixed mode circuit design approaches for space applications Laurent Dugoujon (1), Constantin Papadas (2) and Bill Sinnis (2) 1) ST Microelectronics, 12 rue Jules Horowitz, B.P. 217, 38019 Grenoble Cedex, France 2) Integrated Systems Development S.A., Atrina Center, Building B, 32 Kifisias Avenue, 15125 Marousi, Greece.
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AMICSA’2006 A 0.13um CMOS Rad-hard proven technology with associated mixed mode circuit design approaches for space applications Laurent Dugoujon (1),
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AMICSA’2006 II DDSSIntegrated Systems Development S.A.
A 0.13um CMOS Rad-hard proven technology with associated mixed mode circuit design
approaches for space applications
Laurent Dugoujon (1), Constantin Papadas (2) and Bill Sinnis (2)1) ST Microelectronics, 12 rue Jules Horowitz, B.P. 217, 38019 Grenoble Cedex, France2) Integrated Systems Development S.A., Atrina Center, Building B, 32 Kifisias Avenue, 15125 Marousi, Greece.
AMICSA’2006 II DDSSIntegrated Systems Development S.A.
INTRODUCTION
New Telecommunications Satellites must offer:
• High data throughput
• Uninterrupted Service
• High Reliability
• Competitive costs
- The usage of Deep-Sub-Micron technology is now mandatory to keep-up with US manufacturers -
AMICSA’2006 II DDSSIntegrated Systems Development S.A.
KEY FUNCTIONS
Some functions are « key » to succes:
• Broadband Analog-Digital Converters: ADC & DAC
• High Speed Serial Links
• Digital Processing ASICs
- For these key components, only modern technology nodes (<=0.25um) can fulfill the specifications -
AMICSA’2006 II DDSSIntegrated Systems Development S.A.
TECHNOLOGY / FUNCTIONS
0.25um 0.13um 0.09um
DC-1GHz
Analog functions
1-2GHz Mixed
Analog & Digital
1-4GHz
HSSL
AMICSA’2006 II DDSSIntegrated Systems Development S.A.
RH at PROCESS LEVEL
AMICSA’2006 II DDSSIntegrated Systems Development S.A.
HCMOS9 Core Process
4 or 6 Cu Dual Damascene Metal levels0.41µm pitch metallization, Low k dielectric
0.13µm Technology Platforms
Digital/Analog/RF convergence
HCMOS9 SOIBICMOS9
HCMOS9 SiGeHCMOS9 SiGe
HCMOS9 A
HCMOS9DRAM0. 39/ 0.53µm²
HCMOS9i
AMICSA’2006 II DDSSIntegrated Systems Development S.A.
AMICSA’2006 II DDSSIntegrated Systems Development S.A.
Robust Designs: 10bit DAC
10bit-DACTechnology: 0.13umTopology: Current SteeringSampling Frequency: 15MHzSignal bandwidth~2.5MHzENOB: 8.73bitsImax=1.4mANoise: +/- 2LSB
AMICSA’2006 II DDSSIntegrated Systems Development S.A.
Robust Designs: 10bit ADC
10bit-ADCTechnology: 0.13umTopology: Interleaved SARSampling Frequency: 1.3GHzConsumption: 400mWENOB: in testNoise: in test
AMICSA’2006 II DDSSIntegrated Systems Development S.A.
CONCLUSION
It is the CONJUNCTION of 3 main levels of efforts which can maximize the Radiations performances:
• Intrinsic good choices at Si process level (materials,...)• usage of validated mitigation techniques (libraries, options,...)• design for Rad-hard (architecture, registers,...)
We are able to manage all these levels with additional know-how from space industry trough contractual projects