- 1. AMC - 195 64 AMC (AMCAirborne Molecular Contamination) 12AMC
AMC AMC AMC IAQ AMC , 12 12 AMC AMC AMC Airborne Molecular
Contamination 0.25m 0.18m 0.13m 1
2. B.P. >150 F (65.6 C) MX-NX AMC SEMI Nppt ISO/DIS 14644-8
AMC (Semiconductor Equipment and Materials International) SEMI
F21-95 F21-112 AMC AMC (Acids) AMC SEMI-F21 AMC
(Bases)(Condensables) (Dopants), ISO ISO 1 ( NH3)()(1) MAAcids
ISO-AMC Class N(x)N=log10[concentration in g/m3]x : SEMI 10-4
g/m3(2) MBBasesISO-AMC Class -4(or)10-6 g/m3SEMI (3)
MCCondensablesISO-AMC Class -6(NH3) 2.ISO/DIS 14644-8AMC(o 150 F(4)
MDDopants - single specie()(- a group of species)()ac acid ba base
1.SEMI AMC bt biotoxic cd condensable HF H2SO4 HCl (AAcids) cr
corrosive HNO3,H3PO4HBr AMINENH3NMPdp dopant(BBases)HMDS or
organicsilicone (ChydrocarbonsDOPox
oxidantCondensables)DBPDEPBHTB2H6 BF3 AsH3 (D Dopants)TEP TCEPTPP2
3. AMC part per million 10-6ppbpart per billion 10-9 pptpart per
trillion10-12 5 AMC 10%3040%2530% 1. 2030%2. 3.()4.() 5.() (SOx)
(NOx)6. (VOCs)(O3)7. 8. (NH3)(H2S)(HCl) PVC (NH3) aminesArsine
(AsH3) Boron trifluoride (BF3) N-methyl pyrollidione (NMP) VOCs 1
AMC (,10-10m) HEPA ULPA 1/1,000~1/10,000 1.m AMC ppm 3 4. c. FFU
AMC 2a. d. b. AHU for OAAHU for Recirculation Air 2. AMC AMC
Thermal treatment Catalytical oxdation AbsorptionAdsorption 4 5.
active site AMC HCl AMC KI adsorption surface force adsorbent i
adsorbate ii iii physisorption chemisorption 5% 800m2/g 100 2nm
0.4~0.5ml/g 2~10nm 300m2/g ( HVAC ) diffusion gradient 100 A-type
X-type Y-type mordenite ZSM-5 0.3~1nm300~1000m2/g 5 6. 13X 5A 13X /
1nm 500~2000m2/g 100 () 3 , breakthrough Ppenetration=100C up/Cdown
[%] =100C up- C down/C down [%] Eefficiency=100-P [%] 6 7. 3 1 2 2
34 media1 567 8 1 1 3 2 2 3 3 7 8. 3. 1 2 3 4. 12 Outgas 5 ()(1) C
in C out= 100 %(1) C in Cin (ppm)Cout (ppm) 6(2):Q=C1V{aa
10-2+ba(t)dt 10-2}10-3(2) Q (g) 5. 6.8 9. 7 Full-Scale Gas Filter
Testing Facility 6 - - -nozzle 9 9 (TSI 8386) 9 (Va.)(Vn) 9 (Va)
(u) HEPA (3) 2.1% 1.5% 740ppb 3.8% 4 (600600mm) 5V a Vn (0.3~2.5
m/sec)n 4 ~ 64 CMM (m3/min) Va 1u= 100% , 10 ~n 35 50 ~ 95RH 0.15
mg/m3 V1 + V2 + Vn , n1~9 .3Va = n 9 10. 7 8 10 11. 4
23320~26505%45~55% 0.3~2.5 m/s 4 ~64 CMMDEPNH3 HEPA/Chemical filter
0.1mg/m3 3220V60HZ 5 mm570~610 mm570~610mm 50~300 6 11050ppb ~50ppm
Toluene 100~2500g m-3298DEP(~300ppb) Ammonia-33.510ppb~10ppm V1
V2V3V4V5 V6V7V8 V9 9. 11 12. 1.Kinhead, D.A, Forecast of Airborne
Molecular Contamination Limits for 0.25 Micron High
PerformanceLogic Process, Technology Transfer Report 95052812A-TR,
SEMATECH, May 31, (1995). 2. Tamaoki, M., K. Nishiki, A. Shimazaki,
Y. Sasaki and S. Yanagi, The Effect of Airborne Contaminants inthe
Cleanroom for ULSI Manufacturing Process, IEEE/SEMI Adv. Semicond.
Manufac. Conf., pp.322-326(1995). 3. MacDonald, S.A., W.D.
Hinsberg, H.R. Wendt, N.J. Clecak, C.G. Willson and C.D. Snyder,
AirborneContamination of a Chemically Amplified Resist. 1.
Identification of Problem, Chem. Mater., Vol. 5, No.3, pp. 348-356
(1993). 4. Sugimoto, F. and S. Okamura, Adsorption Behavior of
Organic Contaminants on a Silicon Wafer Surface,J. Electrochem.
Soc., Vol. 146, No. 7, pp. 2725-2729 (1999). 5. pp.107-113 (1999)
6. MediaApplication GuideDocument, Purafil Inc., USA,Itis available
via http://www.purafil.com/library.htm 7. Kanzawa K. and J. Kitano,
A Semiconductor Device Manufacturers Efforts Controlling and
Evaluating Atmospheric Pollution, IEEE/SEMI Advanced Semiconductor
Manufacturing Conference, pp.190-193 (1995). 8. JIS B 9901,
Gas-Removal- Method of Test for Performance of Gas-Removal Filters,
JIS . (1997) 9. ISO/TS 11155-2, Road Vehicles- Air Filters for
Passenger Compartments- Part 2: Test for GaseousFiltration, ISO
Standard, USA, (2002). 10. NT VVS 109, Filters: Adsorption Gas
Filter ISSN 0283-7226, Nordtest Method, Nordic InnovationCentre,
(1996). It is available via http://www.norden.org.12