Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen p-on-n Strip Detectors: ATLAS & CMS ingle-Sided Lithographic Processing ingle-Sided Lithographic Processing ( AC, Poly-Si biasing ) ( AC, Poly-Si biasing ) N Bulk N+ Implants P+ implants Al Strips “P” Bulk N+ Implants P+ implants +++ ++ --- -- +++ ++ --- -- - - - - - ++++ + Surface damage Radiation hardness “recipe” Radiation hardness “recipe” P-on-N sensors work after bulk type inversion, P-on-N sensors work after bulk type inversion, Provided they are Provided they are biased well above depletion biased well above depletion Match sensor resistivity & thickness to fluence Match sensor resistivity & thickness to fluence To optimize S/N over the full life-time To optimize S/N over the full life-time Follow simple design rules for guard & strip geometr Follow simple design rules for guard & strip geometr Use Al layer as field plate to remove high field Use Al layer as field plate to remove high field @edges from Si bulk to Oxide (much higher V @edges from Si bulk to Oxide (much higher V break break ) Strip width/pitch ~ 0.25: reduce C Strip width/pitch ~ 0.25: reduce C tot tot maintain maintain Stable high bias voltage operation Stable high bias voltage operation Take care with process: especially implants… Take care with process: especially implants… Surface radiation damage can Surface radiation damage can increase strip capacitance & noise increase strip capacitance & noise Use <100> crystal instead of <111> Use <100> crystal instead of <111>
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen
P-on-N sensors work after bulk type inversion,P-on-N sensors work after bulk type inversion,Provided they are Provided they are biased well above depletionbiased well above depletion
Match sensor resistivity & thickness to fluenceMatch sensor resistivity & thickness to fluenceTo optimize S/N over the full life-timeTo optimize S/N over the full life-time
Follow simple design rules for guard & strip geometryFollow simple design rules for guard & strip geometry
Use Al layer as field plate to remove high fieldUse Al layer as field plate to remove high field@edges from Si bulk to Oxide (much higher V@edges from Si bulk to Oxide (much higher Vbreakbreak))
Strip width/pitch ~ 0.25: reduce CStrip width/pitch ~ 0.25: reduce Ctottot maintain maintainStable high bias voltage operationStable high bias voltage operation
Take care with process: especially implants…Take care with process: especially implants…
Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen
Silicon Sensor Geometry
Strip capacitance ~ 1.2pF/cm for w/p = 0.25Strip capacitance ~ 1.2pF/cm for w/p = 0.25Independent of pitch and thicknessIndependent of pitch and thickness
Use Use m thick Si for R < 60cm, Stripm thick Si for R < 60cm, Strip ~ 10cm~ 10cm
Use Use m thick Si for R > 60cm, Stripm thick Si for R > 60cm, Strip ~ 20cm~ 20cm
Expected S/N after irradiationExpected S/N after irradiation
S/N ~ 13 for thin sensors, short stripsS/N ~ 13 for thin sensors, short stripsS/N ~ 15 for thick sensors, long stripsS/N ~ 15 for thick sensors, long strips
Insensitive to irradiationInsensitive to irradiationfor <100> crystal latticefor <100> crystal lattice
Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen
Track Reconstruction (CMS)
Generation of seeds (Seed Generator)
• Construction of trajectories for a given seed (Trajectory Builder)• Ambiguity resolution (Trajectory Cleaner)• Final fit of trajectories (Trajectory Smoother)Each component has one or more implementation. Three different algorithms are currently fully
Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen
ATLAS Reconstruction Sw
Software used
iPatRec Rel. 4.x athena reconstruction equivalent to atrecon Rel. 5.x old EDM validated for DC1 Layout Rel. 6.0.3 new “HLT” EDM validated for Pixels/SCT
xKalman Rel 6.0.3 using RD event to get truth association new EDM possible but not used because truth missing
Inner Detector Layout DC1 Initial
b-layer radius 5 cm 5 cm
longitudinal pixel size in b-layer 300 400
2nd pixel layer present absent
pixel disk -#2, forward TRT wheels
present absent
Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen
CMS Secondary Vertex Reconstruction: Principal Vertex Reconstructor
Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen
PV Resolutions and pulls
Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen