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VLSI Technology and Design

Introduction

Prepared by:

Amish J. Tankariya

BE-EC

SEMESTER-VI

SUBJECT-VLSI Technology and Design

GTU Subject Code :- 1710412

SYLLABUS:

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INTRODUCTION

Integrated Circuits (IC): any transistors on onechi!"

Very Large Scale Integration (VLSI)

Complementary Metal Oxide Semiconductor

(CMOS)

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VLSI

Very Large Scale Integration

Design)*anu+acturing o+ extremely small, co*!le,

circuitry using *odi+ied se*iconductor *aterial

Integrated Circuit (IC) *ay contain *illions o+

transistors$ each a +e&* in si-e

A!!lications &ide ranging: *ost electronic logic de.ices

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/OALS O# T0IS COURS1

Learn to design and analyze state-of-te-artdigital VLSI ci!s using CMOS tecnology

Understand design issues at the layout$ transistor$logic and register'trans+er le.els

2er+or*ance analysis and o!ti*i-ation

U i l d i + i h l 3

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ORI/INS O#VLSI

uch de.elo!*ent *oti.ated 3y 44II need +or

i*!ro.ed electronics$ es!ecially +or radar

5678 ' Russell Ohl 9Bell La3oratories ' +irst !n;unction

567< ' Shoc=ley$ Bardeen$ Brattain 9Bell

La3oratories ' +irst transistor

56>? No3el 2hysics 2ri-e

Late 56>8s ' !uri+ication o+ Si ad.ances to acce!ta3le

le.els +or use in electronics

56>< ' Sey*our Cray 9Control Data Cor!oration '+irst transistori-ed co*!uter ' CDC 5?87

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ORI/INS O#VLSI 9CONT"

56>6 ' @ac= St" Claire il3y 9Te,as Instru*ents '

+irst integrated circuit ' 58 co*!onents on 6 **

56>6 ' Ro3ert Norton Noyce 9+ounder$ #airchild

Se*iconductor ' i*!ro.ed integrated circuit

56?< Noyce /ordon 1 oore +ound Intel

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$%& VLSI 'SI*+Money, tecnology, ciilization

40YVLSI I2F

A &ay to design electronic circuits

Di*ensionally G*icron$ su3*icron$ nano range

Current day technology

icro electronics cree!ing in all disci!lines'''9*erger o+ .arious disci!lines in syste* design

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DI/R1SSION: SILICON S1ICONDUCTORS

odern electronic chi!s are 3uilt *ostly on silicon sustrates

Silicon is a rou! IV se*iconducting *aterial

Crystal lattice: co.alent 3onds hold each ato* to four

neigours

Si SiSi

Si SiSi

Si SiSi

http://onlineheavytheory.net/silicon.html

DO2ANTS Silicon is a semiconductor at roo* te*!erature

2ure silicon has fe# free carriers and conducts !oorly

Adding do!ants increases te conductiity drastically

Do!ant +ro* rou! V9e"g" As$ 2: extra electron 9n'ty!e

Do!ant +ro* rou! III 9e"g" B$ Al: *issing electron$

called ole 9!'ty!e

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2'N @UNCTIONS

.irst semiconductor 9t&o ter*inal de.ices

A ;unction 3et&een !'ty!e and n'ty!e

se*iconductor +or*s a diode"

Current +lo&s only in one direction

p - t y p e n - t y p e

a n o d e c a th o d e

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A Brief History Birth of Morden ElectronicsInvention of the Transistor

Vacuu* tu3es ruled in +irst hal+ o+ 8th century Large$e,!ensi.e$ !o&er'hungry$ unrelia3le

567: first transistor 9 ter*inal de.ices

Shoc=ley$ Bardeen and Brattain at Bell La3s' &inner o+

No3el !ri-e in !hysics"

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A Brief History, contd..

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568Es !rocesses usually had only nOS transistors

Ine,!ensi.e$ 3ut consu*e !o&er &hile idle

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20YSICAL LAYOUT

7ransistor size f M distance 3et&een source and

drain

7e area of te 7ransistor can e a!!roximated

y ate 1rea ($xL)

And the ate 1rea &ill 3e !ro!ortional to the ($8L)

ratio o+ the transistor"

Set 3y *ini*u* &idth o+ !olysilicon

The another *easure o+ the IC %feature size9 is the

s*allest sha!e you can *a=e on a chi! and is

*easured in or lamda;

9since la*3da is eual to hal+ o+ the s*allest transistorsi-e

1,!ress rules in ter*s o+ Mf)

1"g" M 8"* in 8"?* !rocess

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r.AmishJ.Tankariya

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Ref: http://micro.magnet.fsu.edu/creatures/technical/sizematters.html

P Modern transistors are +e& *icrons &ide and a!!ro,i*ately

: /ordon oore !lotted transistor on each chi!

#it straight line on se*ilog scale

Transistor counts ha.e dou3led e.ery ? *onthsMr.AmishJ.Ta


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Evolution of logic complexity in IC.

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ITRS- International Technology Roadmap for

Semiconductors

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Shrinking Device Dimensions

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Increasing Function Density

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Increasing Clock Frequency

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Decreasing Supply Voltage

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Graphical Analysis:

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AAQIN/ VISIONARY

illion transistor)chi! 3arrier &as crossed in the

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INTEGRATION OF A LARGE NUMBER OF FUNCTIONS ON

A SINGLE CHIP USUALLY PROVIDES:

Less area8olume and there+ore$ co*!actness

Less !o#er consu*!tion

Less testing re0uirements at syste* le.el

%iger reliaility$ *ainly due to i*!ro.ed

on'chi! interconnects

%iger s!eed, due to signi+icantly reduced

interconnection length

Signi+icant cost saings

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C0I2 ANU#ACTUR1 2ROC1SS:

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.14@IC17IO* /@OCSS SA"*C

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Chip Fabrication: Single Crystal Growth(I)

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C0OIC1 O# T1C0NOLO/Y

T&o distinct ty!es o+ technology are +a3ricated in

silicon 3ased u!on

B@T 9Bi!olar @unction Transistor OS 9etallic O,ide Se*iconductor

Since !rocessing o+ these technologies is .ery

di++erent$ it is i*!ractical to *i, the* u! &ithin

a chi!

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Transistor Types 4i!olar transistors

n!n or !n! silicon structure

S*all current into .ery thin 3ase layer controls large

currents 3et&een e*itter and collector

Current Controlled De.ice

Base currents li*it integration density

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C0OIC1 O# OSAND B@T

OS logic occu!ies *uch s*aller area o+silicon than the eui.alent B@T logic

OS technology has a *uch higher !otential!ac=ing density

A OS logic circuit reuires a!!recia3ly lesscurrent and hence less !o&er than its 3i!olarcounter !art

0o&e.er$ 3i!olar circuits o!erate +aster thanOS circuits

1.en so$ the s!eed'!o&er !roduct +or OSlogic co*!ares +a.ora3ly &ith that o+ B@Tlogic 43

C0OIC1 O# OSAND B@T

The structure o+ an OS transistor is *uchsi*!ler than that o+ 3i!olar de.ices and this*a=es *anu+acturing !rocess easier

This in turn should result in +e&er +aultsoccurring in +a3rication 9high yield

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SUARY

OS Transistors are stac= o+ gate$ o,ide$ silicon and!'n ;unctions

Can 3e .ie&ed as electrically controlled s&itches Build logic gates out o+ s&itches

Dra& *as=s to s!eci+y layout o+ transistors

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O4BC7IV 1*' O@1*I17IO* O. 7% 4OOD

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QUES

TIONS

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