AGNITRON TECHNOLOGY 14530 Martin Dr. • Eden Prairie, MN, 55344 • Tel: (952) 937.7505 • Fax: (612) 605.4327 AGNITRON AGNITRON AGNITRON TECHNOLOGY SYSTEM FEATURES • Hazardous gas detection and safety alarms • Standard metal organic configuration includes capacity for up to 5 sources • Compact streamlined design provides reliable processing and requires minimal maintenance • IMPERIUM control software with DeviceNet/PLC comm for MFCs, Baratrons, temperature controllers and other I/Os REACTOR DESIGN • Differential pumped seals • Vertical quartz tube reactor • Water cooled reactor wall and base plate • Separate injection for alkyls and hydrides • Capability of 3 X 2”, 1 x 3” or 1 x 4” wafer loading • Inductive heating for high temperature growth is controlled by RF coil • Ferrofuidic pass through with servo motor rotation up to 1500 RPM • Custom adjustable distance between gas injection flange and susceptor • No graphite within the reactor to minimize boron migration into the grown material ENHANCED PROCESS CAPABILITIES • Temperature controlled showerhead • Pressure process window: 25-300 Torr • Susceptor cool down rate > 100°C per minute • Optical interferometer for insitu growth monitoring • Point of use gas purifiers for H 2 , N 2 and NH 3 • Better than 2°C across susceptor temperature uniformity • Temperature capability up to 1500°C without degradation within the reactor • Emissivity corrected pyrom- eter with feedback control loop to RF heating coil AGILIS AGILIS The AGILIS MOCVD system delivers state of the art Aluminum III-Nitride processing capabilities in a compact modular design. The temperature controlled small volume reactor provides economical process- ing for materials research and development. Reactor configurations are available with 1 or 3 wafer suscep- tors for wafer sizes from 25-100mm. Induction heating enables precise high temperature growth up to 1500°C while the temperature stabilized injection flange pre- vents pre-reaction and decomposition of precursors. Adjustable spacing between the susceptor and injec- tion flange provides additional flexibility for process control. The advanced IMPERIUM control system provides unparalleled capabilities not offered by other compact MOCVD systems. AGILIS is ideal for growth of: Materials: AlN, AlGaN, InGaN, doped and undoped Structures: LEDs, LDs, HEMTs, MQWs, SLSs