Advanced Metallization Conference 2006 (AMC 2006) These proceedings represent the work of presenters at the Conferences held October 17-19, 2006, in San Diego, California, U.S.A. and September 26-27, 2006, at the University of Tokyo, Tokyo, Japan. This combined Conference is MRS affiliated and sponsored by the Continuing Education in Engineering, University Extension, University of California at Berkeley, California, U.S.A. EDITORS: Stephen W. Russell Micron Technology Boise, Idaho, U.S.A. Michael E. Mills Dow Chemical Advanced Electronic Materials Midland, Michigan, U.S.A. Akihiko Osaki Rcnesas Technology Corporation Myogo, Japan Takashi Yoda Toshiba Corporation Yokohama, Japan IMIRISI Materials Research Society
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Advanced Metallization
Conference 2006
(AMC 2006)
These proceedings represent the work of presenters at the Conferences held
October 17-19, 2006, in San Diego, California, U.S.A. and September 26-27, 2006, at
the University of Tokyo, Tokyo, Japan. This combined Conference is MRS affiliated
and sponsored by the Continuing Education in Engineering, University Extension,
University of California at Berkeley, California, U.S.A.
EDITORS:
Stephen W. Russell
Micron Technology
Boise, Idaho, U.S.A.
Michael E. Mills
Dow Chemical -- Advanced Electronic Materials
Midland, Michigan, U.S.A.
Akihiko Osaki
Rcnesas Technology Corporation
Myogo, Japan
Takashi YodaToshiba CorporationYokohama, Japan
IMIRISI
Materials Research Society
CONTENTS
Preface xix
Acknowledgments xxi
Materials Research Society Conference Proceedings xxiii
KEYNOTE PRESENTATION
**Nanostructured Materials for Interconnects 3
Gael F. Close and H.-S. Philip Wong
DESIGNANDINTERCONNECTMODELING
* Modeling and Extraction of Nanometer Scale
Interconnects: Challenges and Opportunities 17
Roberto Suaya, Rafael Escovar, Salvador Ortiz,Kauslav Banerjee, andNavin Srivastava
On-Chip Differential-Transmission-Line (DTL)Interconnect for 22nm Technology 29
Thin Film Characterization of PEALD Ru Layers on an
ALD WNC Substrate 227
Henny Volders, Zsolt Tokei, Fabrice Sinapi, Hugo Bender,Alessandro Benedetti, Bert Brijs, Thierry Conard,Alexis Franquet, Johnny Steenbergen, YoussefTravaly,Hessel Sprey, Wei-Min Li, Akira Shimizu, and
Hyung Sang Park
Conformal Deposition of Metal Oxide Films in SupercriticalCarbon Dioxide 233
Adam O'Neil and James J. Watkins
Chemical Vapor Deposition Growth and Characterization
of Amorphous Ruthenium Phosphorous Alloy Films 239John G. Ekerdt, Jinhong Shin, Lucas B. Henderson,Wyatt A. Winkenwerder, Abdul Waheed, and
Richard A. Jones
IX
Properties of Ge/HfN, Bilayer as a Diffusion Barrier for
Cu Metallization 245Seemant Rawal, KeeChan Kim, David P. Norton,
Tim Anderson, and Lisa McElwee-White
ADVANCEDSEMICONDUCTOR DEVICE
ARCHITECTURE (< 32nm)
* Integration of Carbon Nanotubes Into Via Structures 2f?»3
Yuji Awano
High Performance Ultra Low-k (k=2.0/keff=2.4) HybridDielectrics/Cu Dual-Damascene Interconnects With
Selective Barrier Layer for 32nm-node 2<*3Yumi Hayashi, Kazumichi Tsumura, Miyoko Shimada,Kei Watanabe, Hideshi Miyajima, Takamasa Usui, and
Hideki Shibata
PEALD of Ru Layer on ALD-WNC Barrier for Cu/Porous
Low-k Integration 2<>9K. Namba, T. Ishigami, M. Enomoto, S. Kondo,H. Shinriki, D. Jeong, A. Shimizu, N. Saitoh,W-M. Li, S. Yamamoto, T. Kawasaki, T. Nakada,
and N. Kobayashi
Mechanical Models of Polycrystalline 3D-IC Interwafer Vias Z75
Daniel N. Bentz, Max O. Bloomfield, Jian-Qiang Lu,
Ronald J. Gutmann, and Timothy S. Cale
Physical Properties of PECVD Amorphous Carbon Depositedat High Temperature for Use as an Etch Hard Mask 2.81
Steven R. Smith, Roshan J. George, Doug H. Lee,
Donghui Lu, and Oleh P. Karpenko
LOW-kINTERLAYER DIELECTRICS
* Non-Poisoning Dual Damascene Patterning Scheme for
Low-k and Ultra Low-k BEOL 2t81W. Cote, D. Edelstein, C. Bunke, P. Biolsi, W. Wille,H. Baks, R. Conti, T. Dalton, T. Houghton, W-K. Li,Y-H. Lin, S. Moskowitz, D. Restaino, T. Van Kleeck,S. Vogt, and T. Ivers
*Invited Paper
x
Photo-Stimulated Desorption From Porous Low-k Films
by UV Cure Treatments With Various Wavelength 295Fuminori Ito, Tsuneo Takeuchi, and Yoshihiro Hayashi
Silylation Gas Restoration Subsequent to All-in-One
RIE Process Without Air Exposure for Porous Low-k
SiOC/Copper Dual-Damascene Interconnects 301
A. Kojima, N. Nakamura, N. Matsunaga, H. Hayashi,K. Kubota, R. Asako, K. Maekawa, H. Shibata, T. Yoda,and T. Ohiwa
Material Design of Porous Low-k Materials for 45nm Node
Interconnects 307K. Watanabc, H. Miyajima, M. Shimada, N. Nakamura,T. Shimayama, Y. Enomoto, FI. Yano, and T. Yoda
Effect of Surface Modification of Nano-Porous Low-k Film
on Cu Barrier Layers 313Bum Ki Moon, A. Simon, M. Shall Pallachalil, T. Bolom,H. Wendt, M. Chae, P. Dehaven, C. Dziobkowski, A. Madan,
P. Flailz, S.M. Choi, S.L. Liew, J, Working, S. Grunow,S.O. Kim, E. Kallalioglu, M. Beck, and L. Clevenger
Computational Approach to Structures, Properties, andUltraviolet-Cure Mechanism of a Porous-SiOC Material 321
L. Favennec, V. Jousseaume, A. Zenasni, M. Assous,
T. David, and G. Passemard
A Porous SiCOH Dielectric With k=2.4 for High Performance
BEOL Interconnects 3 $ I
S.M. Gates, A. Grill, C. Dimitrakopoulos, D. Restaino,
M. Lane, V. Patel, S. Cohen, E. Simonyi, E. Liniger,Y. Ostrovski, R. Augur, M. Sherwood, N. Klymko,S. Molis, W. Landers, D. Edelstein, S. Sankaran,R. Wisnieff, T. Ivers, K. Yim, V. Nguyen, T. Nowak,
J.C. Rocha, S. Reiter, and A. Demos
Barrier-Free Interconnect With Organic Spin-On Dielectric 35»9
Nobuhide Maeda, Yoshio Takimoto, Kenzo Maejima,Michio Nakajima, and Keisuke Funatsu
Porogen Precursors for ULK (k<2.2) PECVD Dielectrics 3>*t
Steven Bilodeau, Phil Chen, William Giannetto,
Chongying Xu, William Hunks, Thomas H. Baum,
and Jeffrey F. Roeder
Process Response of UV Curable CVD Porous Ultra-Low-k
Dielectric 375
Sharath Hosali, Gregory Smith, Larry Smith, Sanjit Das,
and Sitaram Arkalgud
Stress Analysis of Low-k Material Interface During CMP 3 K3