ACEPACK™ 1 Features • ACEPACK™ 1 power module – DBC Cu Al 2 O 3 Cu • Sixpack topology – 650 V, 50 A IGBTs and diodes – Soft and fast recovery diode • Integrated NTC Applications • Inverters • Industrial • Motor drives Description This power module is a sixpack topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A1P50S65M2 Product summary Order code A1P50S65M2 Marking A1P50S65M2 Package ACEPACK™ 1 Leads type Solder contact pins ACEPACK™ 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC A1P50S65M2 Datasheet DS12332 - Rev 2 - February 2018 For further information contact your local STMicroelectronics sales office. www.st.com
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ACEPACK™ 1
Features• ACEPACK™ 1 power module
– DBC Cu Al2O3 Cu• Sixpack topology
– 650 V, 50 A IGBTs and diodes– Soft and fast recovery diode
• Integrated NTC
Applications• Inverters• Industrial• Motor drives
DescriptionThis power module is a sixpack topology in an ACEPACK™ 1 package with NTC,integrating the advanced trench gate field-stop technology from STMicroelectronics.This new IGBT technology represents the best compromise between conduction andswitching loss, to maximize the efficiency of any converter system up to 20 kHz.
Product status
A1P50S65M2
Product summary
Order code A1P50S65M2
Marking A1P50S65M2
Package ACEPACK™ 1
Leads type Solder contact pins
ACEPACK™ 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC
A1P50S65M2
Datasheet
DS12332 - Rev 2 - February 2018For further information contact your local STMicroelectronics sales office.
iri (˚C/W) 0.0808 0.3144 0.6701 0.3713τi(s) 0.0003 0.0113 0.0752 0.3492
Zth(typ.)JH
Zth(max.)JC
RC - Foster thermal network
RC - Foster thermal network1 2 3 4
A1P50S65M2Electrical characteristics (curves)
DS12332 - Rev 2 page 7/12
3 Test circuits
Figure 15. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3 µF
1000 µF
L=100 µH
VCC
E
D.U.T
B
AM015 04v1
Figure 16. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 17. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
ICTd(on)
TonTr(Ion)
Td(off)
ToffTf
Tr(Voff)
Tcross
90%
10%
Figure 18. Diode reverse recovery waveform
25
A1P50S65M2Test circuits
DS12332 - Rev 2 page 8/12
4 Topology and pin description
Figure 19. Electrical topology and pin description
P
G1 G3 G5
G2 G4 G6
UV
W
EWE’W
EVE’V
EUE’U
T1
T2
Figure 20. Package top view with sixpack pinout
A1P50S65M2Topology and pin description
DS12332 - Rev 2 page 9/12
5 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
5.1 ACEPACK™ 1 sixpack solder pins package information
Figure 21. ACEPACK™ 1 sixpack solder pins package outline (dimensions are in mm)
33.8±0.3
28.1±0.2
19.4±0.2
16.4±0.2
62.8
±0.
5
53±
0.1
42.5
±0.
2
41±
0.2
48±
0.3
4.5±0.1
3.2 BSC
12±
0.35
15.5
±0.
50
36.8
REF
1.3±0.2
2.5±0.2
3.2
BSC
Detail A
Section B-B
2.3
REF 8.5
3.5 REF x45°
B
B
AA
3.20
6.40
0.00
12.80
16.00
22.40
25.60
28.80
32.00
0.00
6.40
16.0
0
19.2
0
25.6
0
G6
P
W
VW
G5
T1
T2
G3
U
U
G1
E'W EW G4 EV E'V EU E'U
G2
P
V
3.20
9.60
22.4
0
0.64±0.03
GADG240820170900MT_8569715_4
• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.
Updated Figure 21. ACEPACK™ 1 sixpack solder pins package outline(dimensions are in mm).
Minor text changes
A1P50S65M2
DS12332 - Rev 2 page 11/12
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.