Accounting for Variability and Uncertainty in Signal and Power Integrity Modeling Andreas Cangellaris & Prasad Sumant ElectromagneticsLab, ECE Department University of Illinois
Accounting for Variability and
Uncertainty in Signal and Power
Integrity Modeling
Andreas Cangellaris & Prasad
Sumant
Electromagnetics Lab, ECE Department
University of Illinois
Acknowledgments
• Dr. Hong Wu, Extreme DA
• Prof. Narayan Aluru, University of Illinois
• DARPA for funding support
Agenda
• Are we using the might of EM CAD wisely?
– Uncertainty and Variability (UV) in Signal/Power
Integrity Modeling
• Accounting for UV in SI/PI modeling and
simulation
– Interconnect electrical modeling
– Model order reduction in the presence of UV
• Closing Remarks
Are we using the might of EM CAD for
signal integrity-aware design wisely?
Floor planning
Power planning
Placement
Clock planning
Routing
Physical Layout
Sign-0ff analysis
Interconnect parasitic extraction
IR-drop analysis EM analysis
Signal-integrity analysis Timing analysis
Physical verification DFM
ECOs
Input filed for
EDA tools
Timing/power
library
Interconnect
library
Electromagnetic modeling/simulation
pervasive in physical design and sign-off
analysis
Kurokawa et al, Interconnect Modeling:
A Physical Design Perspective, IEEE Trans.
Electron Devices, Sep. 2009
Power Integrity
• Package impedance
– Design/layout-dependent
– R impacted by manufacturing tolerances
• On-chip grid
– R variability due to CMP
• On-chip decoupling
– Available C dependent on operation, VT, Tox, …
Impact of Package R on IR drop(*)
(*)Sani Nassif, IBM
Variability and Uncertainty
Source: Future-Fab International
Stacked dies
Package-on-package
05.23.08Source: TNCSI
Multiple layers
Variability and Uncertainty
Variability and Uncertainty
?
Accounting for SI/PI Modeling
and Simulation
Interconnect Cross-Sectional
Geometry
• Parameters– Trace width
– Trace thickness
– Trace shape
– Pitch
– Height above ground
– Surface roughness
– Substrate permittivity
– Metallization conductivity
• Derivative quantities– Transmission-Line Modeling
• R, L, C, G (per-unit-length)
• Characteristics Impedance
• Phase constant
• Attenuation constant
– Full-wave modeling• Metallization surface
impedance
Transmission-Line Parameter
Extraction
conducto
r
ground plane
mean geometry
random geometry
Mapping between random sample and
mean geometry
' 0LE dl V⋅ =′ ′∫uuur r
0( ).( )L
D r dl Vrε′
′ ′ ′ =′∫uuuruur
uur
r
0( )c L
dlD Vrε′
′ =′∫
uuuruuur
uur
00 0( )
( )
c
L
VD r D
dlrε′
′ ′ = =′′∫
uuuur uuuruuur
uuur
uur
00( )
( )L
VD r
dlrε
=
∫
uur uuruur
ur
0 0 0( ) ( )D r Q D r′ ′ =uuuur uuur
uur uur
( )
( )
L
L
dlrQ
dlr
ε
ε′
=′′
∫
∫
uur
ur
uuur
uur
Random sample
(1)
Mean geometry
(2)
Mapping relationship(3)
Electric flux density computation
using solution on mean geometry
00 0
0
( ) ( )( )
VG r r
D rε=
ur ur
ur ur
00 0
0 0
( )( ) ( )
( ) ( )
G rD r D r
G r v r′′ =
−
uruur ur ur ur
ur ur
0 0
0 0
( ) ( )1
( ) ( ) ( )L
G r v rdl
r r rε ε ε′′ ≈ −
′∫ur ur
ur ur ur
0 0 0( ) ( ) ( )L r L r v r′ ′ ≈ −ur ur ur
1 1
( ) ( )L L vdl dl
r rε ε′ −′ ≈
′∫ ∫ur r
Position-dependent flux length/gap on mean
geometry:
Flux length on random
sample:
0
0
( )1 (exact)
( ) ( )L
G rdl
r rε ε=∫
ur
r ur
Electric flux density on random sample using mean geometry:
Computation of capacitance of
random sample
x y
X XJx y
Y Y
∂ ∂ ∂ ∂=
∂ ∂ ∂ ∂
00
0 0
( )
( )( )
( ) ( )
rs
mean
C
C
C D r dl
G rC D r J dl
G r v r
′ ′ ′ ′=
′ =−
∫
∫
uur ur
urur ur
ur ur
Capacitance on random sample:
Where J represents the Jacobian, the map between the random and mean
geometry:
Representing uncertainty using
polynomial chaos
0
ˆ( , ) ( ) ( ( ))ii
u r a rθ ξ θ∞
== Ψ∑
r r
0
ˆ( , ) ( ) ( ( ))N
ii
u r a rθ ξ θ=
= Ψ∑r r
2 3 4 20 1 2 3 4( ) 1, ( ) , ( ) 1, ( ) 3 , ( ) 6 3,...ξ ξ ξ ξ ξ ξ ξ ξ ξ ξ ξΨ = Ψ = Ψ = − Ψ = − Ψ = − +
Polynomial chaos expansion:
Coefficients: functions of space
Orthogonal polynomials are random variables
Truncated polynomial chaos expansion:- Number of different input random variables: n
- Order of polynomials: p
Type of polynomials depends on distribution of input random variable
- Gaussian distribution, Hermite polynomial chaos
( )!1
! !
n pN
n p
++ =
Computing stochastic capacitance
( , ) ( ) ( , )G r G r v rθ θ= −r r r%
2 3
02 3
( , ) ( , ) ( , )( ) 1 .... ( )
( ) ( ) ( )
v r v r v rD r D r
G r G r G r
θ θ θ ′ ≈ + + + +
r r rr rr r%
r r r0
( )( ) ( )
( ) ( )
G rD r D r
G r v r′ ′ ≈
−
rr rr r
r r
2 3
02 3
( , ) ( , ) ( , )1 .... .
( ) ( ) ( )S
v r v r v rC J D ds
G r G r G r
θ θ θ ≈ + + + +
∫
r r rrr
%r r r
0
( , ) ( ) ( ( ))N
ii
v r v rθ ξ θ=
= Ψ∑r r
0
( ) ( ( ))N
ii
C C r ξ θ=
= Ψ∑r
%
Displacement of random geometry from the mean geometry:
Use relationship between random and mean flux length:
Stochastic Electric Flux Density:
Stochastic Capacitance:
(*)
Single trace over ground plane
- The height of the conductor above the ground plane ‘H’ is uncertain.
4ε =
1ε =
7ε =
L
T
H
Mean Geometry dimensions : L=1 um, T = 0.1 um, H= 0.2 um
-Where is the mean height
- is a Gaussian random variable with mean 0 and variance 1
0( ) (1 ( ))H Hθ νξ θ= −
0Hξ
0( , )v r Hθ νξ=r
2 220 0
021 ....
( ) ( )S
H HC J D dl
G r G r
ν νξ ξ ≈ + + +
∫
r%
r r
20 1 2( 1)C C C Cξ ξ= + + −%
2
00 0
2
0 01 0 2 0
1( )
, ( ) ( )
S
S S
HC J D dl
G r
H HC J D dl C J D dl
G r G r
ν
ν ν
= +
= =
∫
∫ ∫
r
r
r r
r r
Single trace over ground plane
Displacement of random geometry from the mean geometry
Second-order Hermite polynomial chaos for stochastic
capacitance
Only one deterministic run
needed to get 0Dr
Single trace over ground plane
%change
in H
Monte Carlo FEM based Approach
Mean Std
deviation
Mean Std
deviation
10% 329.7429 11.5365 329.83 11.43
20% 331.0031 23.6053 331.48 23.31
Self-capacitance (pF/m)
Single trace over ground plane
%change
in L
Monte Carlo FEM based Approach
Mean Std
deviation
Mean Std
deviation
10% 331.0028 7.26 329.26 7.48
20% 331.5143 14.92 329.26 14.96
Simulation time comparison
Time for 1 Capacitance extraction run ~1.2 s
� Monte Carlo : Time for 10000 runs ~ 12000 s
� Our approach ~ 2.0 s
Capacitance (pF/m)
Mean Geometry dimensions : L=1 um, S = 0.15 um, H= 0.2 um
4ε =
1ε =
7ε =
L
T
H
S
% change
in H and S
Monte Carlo FEM based Approach
Mean Std
deviation
Mean Std
deviation
10% 368.7324 13.04 368.85 14.05
20% 370.2421 26.83 370.83 28.65
Self-capacitance (pF/m)
Coupled symmetric microstrip
Microstrip with multi-dielectric
substrate
4ε =
1ε =
4ε =
L
T
8ε =7ε =
%change in
each layer
below
Conductor
Monte Carlo (10000) FEM based Approach
Mean Std deviation Mean Std deviation
10% 268.94 6.76 268.01 6.26
20% 269.46 13.56 267.82 12.56
0.1
0.1
0.1
Self-capacitance (pF/m)
Remarks
• Expedient way for handling statistical
variability in interconnect cross-sectional
geometry
– p.u.l. capacitance extraction 100x - 1000x faster
than standard Monte Carlo
• Approach independent of the field solver used
Deterministic Model Order Reduction2( )org org org org
Horg
Y sZ s Pe x sB I
V L x
+ + =
=
2 1( ) ( )HGZ s sL Y sZ s Pe B−= + +
Horg
Horg
Horg
Y F Y F
Z F Z F
Pe F Pe F
=
=
=
Generalized Multiport Impedance Matrix using reduced model:
Model Order Reduction
e.g. Krylov subspace based
methods
Projection matrix F
2( )H
Y sZ s Pe x sBI
V L x
+ + ==
Order: N
Order n << N
Model order reduction under
uncertainty
2( )H
Y sZ s Pe x sBI
y L x
+ + =
=
2( )H
Y sZ s Pe x sBI
V L x
+ + ==
% % % %
% %
Horg
Horg
Horg
Y F Y F
Z F Z F
Pe F Pe F
=
=
=
% % % %
% % % %
% % % %
0 1 1 2 2 0 1 1 2 2
0 1 1 2 2 0 1 1 2 2
,
,
org org
org
Y Y Y Y Z Z Z Z
Pe P P P F F F F
ξ ξ ξ ξ
ξ ξ ξ ξ
= + + = + +
= + + = + +
% %
% %
Deterministic Reduced Order Model Stochastic Reduced Order Model
Represent stochastic system matrices using polynomial chaos expansion:
Augmented Stochastic Reduced Order
Model
0 1 1 2 2 0 1 1 2 2
20 1 1 2 2 0 1 1 2 2 0 1 1 2 2
[( ) ( )
( )]( ) ( )
Y Y Y s Z Z Z
s Pe Pe Pe x x x s B B B I
ξ ξ ξ ξξ ξ ξ ξ ξ ξ
+ + + + + +
+ + + + = + +
0 1 2 0 0 1 2 0 0 1 2 0 0
21 0 1 1 0 1 1 0 1 1
2 2 2 22 0 2 0 2 0
0 0 0
0 0 0
Y Y Y x Z Z Z x Pe Pe Pe x B
Y Y x s Z Z x s Pe Pe x s B I
x x x BY Y Z Z Pe Pe
+ + =
2
2 1
( )
( )
aug aug aug aug aug
Haug aug aug
Haug aug aug aug aug aug
Y sZ s Pe x sB I
V L x
Z sL Y sZ s Pe B−
+ + =
=
= + +
Augmented reduced order model
Order: 3n << N
Computing polynomial chaos
coefficients
1 1 2 2 1 2 0 1 1 2 2 1 1
0 1 1 2 2 1 2
2 2 1 2( ) ( ) ( ) ( ) ( )
( ) ( )
or
org
g
Y
Y d d Y Y Y d d
Y d d
ρ ξ ρ ξ ξ ξ ξ ξ ρ
ρ ξ ρ
ξ ρ ξ
ξ ξ
ξ
ξ
ξ= + +
=
∫ ∫
∫
∫
∫
∫%
%
1 1 1 2 2 1 2 0 1 1 2 2
1 1 1 1 2
1 1 1 2 2 1 2
2 1 2
( ) ( ) ( ) ( ) (
( ) (
)
)
org
org
Y d d
Y Y d
Y Y
d
Y d dξ ρ ξ ρ ξ ξ ξ ξ ξ ξ ρ ξ
ξ ρ ξ ρ ξ ξ ξ
ρ ξ ξ ξ= + +
=
∫∫ ∫
∫
∫
∫
%
%
Coefficient matrices in polynomial chaos expansion: - Integrate over the random space and use orthogonality of the
polynomials
Smolyak Sparse Grid Integration
1 1 2 2 1 2( ) ( ) ( ) ( )j
org jI f Y d d w f uρ ξ ρ ξ ξ ξ= ≈∑∫∫ %
cos ( 1), 1...
1j j
u j qq
π −= − =−
( )1
1
1 1
1
1 1 11 1
Number of calculat
[ ] ... [ ]
... ( ,..., ).( ... )
ions
N
N
N N
N
qqQi i
qqj jj j
N
Nj j
I f I I f
f u w w
q
u= =
≡ ⊗ ⊗
= ⊗ ⊗
∝
∑ ∑
( )
11
1Number of calcul
( ) ( , )
ations
1( 1) . .( ...
log
)N
Q
J ii i
J N i J
N
I f A J N
NI I
J i
q q
−
− + ≤ ≤
−
≡ =−
= − ⊗ ⊗
∝
− ∑
1-d integration rule: e.g. using chebyshev polynomial extrema
The case of multiple random variables:
1
( ) ( )q
j j
j
I f f u w=
=∑
Deterministic Cartesian Product
(DCP) rule:Smolyak Sparse Grid Algorithm
Idea: Not all points are equally important;
hence, discard the least important ones
Comparison of grids generated using
Tensor Product and Smolyak
Algorithm• Tensor product grid (81 points)
Smolyak Sparse grid (29 points)NQ q∝ pQ N∝q: number of points in 1-d rule
N: number of random dimensions
p: level in Smolyak algorithm
Algorithm for Stochastic MOR• Represent uncertainty in the original
system matrices through polynomial
chaos expansion
• Generate sparse grid points and their
corresponding weights using Smolyak
Sparse grid algorithm
• Compute the transformation matrix
through MOR of individual systems
corresponding to Smolyak sparse grid
points
• Compute the stochastic transform
matrix
• Define the stochastic reduced order
model
1 2
~
0 1 2orgY Y Y Yξ ξ+= +
{ } { },i iM Mw wθ ξ= =
ix F z=
1 2 2
~
0 1 FF F Fξ ξ+= +
2( )org org org orgY sZ s Pe x sB I+ + =
2( )Y sZ s Pe x sBI+ + =
2( )aug aug aug aug augY sZ s Pe x sB I+ + =
Example Study: Terminated coaxial
cable
• Air-filled coaxial cable, terminated at a resistive load:– L=1m, inner radius=5mm, outer radius=10mm
– FEM system (Y,Z,Pe) of order 36840
– Reduced order system of order 20.
• Randomness in two inputs– Permittivity: uniform random variable in [3.4-4.4]
– Load resistance: uniform random variable in [25-35] ohms
• Monte Carlo: 10201 simulations
• Smolyak: 29 points
Re{Zin(f)}
• Mean of real part
of input impedance
• Standard deviation
of real part of input
impedance
Corner simulations vs. stochastic
simulations
• Standard practice to simulate corners for accounting for variability
• Corner simulations can be ‘conservative’
• Coaxial cable example – consider corner values for random input parameters (ε,RL)– (3.6,25)
– (4.0,30)
– (4.4,35)
• Compare with information generated using stochastic MOR
Corner vs. stochastic simulation
• Corner simulation appears very conservative
• Mean parameter solution is not accurate compared to the mean
of stochastic simulation
Remarks
• Very good accuracy obtained with 100x to 1000x improvement in computation time compared to standard Monte Carlo.
– Stochastic MOR model appropriate for time-domain simulations
• Stochastic MOR can have advantages over traditional corner based simulations
• Approach independent of the deterministic MOR method
• Variability and uncertainty is not a curse
– It is an essential part of the dynamo of our evolution toward the next, more advanced state
“Chaos is the score upon which reality is written” – Henry Miller
• We should embrace uncertainty as an opportunity for tackling complexity
– It will make our design tools more agile, more useful, and more conducive to complex system design flow
• It is critical for universities to pave the way down this path
– Our future will not be built by deterministically-minded technologists and innovators