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A Silicon-Polymer Heterostructure for Sensor Applications

Apr 04, 2018

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Noel Felix Melo
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    -2 -1 0 1 210

    -10

    10-9

    10-8

    10-7

    10-6

    10-5

    10-4

    10-3

    10-2

    (b)

    (a)

    (b)

    (a) Before Irradiation

    After 3000 Gy

    Current(A)

    Voltage (V)

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    0 1 2 3 4 5 6 70

    300

    600

    900

    1200

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    (a)

    (b)

    Reverse Bias

    Forward Bias

    Dose (103 Gy)

    I/I

    O(%)

    0

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    800

    1000

    I/I

    O(%)

    -

    0 1 2 30

    100

    200

    300

    400

    500

    600

    700

    800

    V

    +V

    (a)

    (b)

    (c)

    (d)

    Voltage (V)

    Current(A)

    -