A Planar Magic-T Structure Using Substrate Integrated Circuits Concept and Its Mixer Applications

72 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 59, NO. 1, JANUARY 2011

A Planar Magic-T Structure Using SubstrateIntegrated Circuits Concept and

Its Mixer ApplicationsFan Fan He, Ke Wu, Fellow, IEEE, Wei Hong, Senior Member, IEEE,

Liang Han, Student Member, IEEE, and Xiaoping Chen

Abstract—In this paper, a planar 180 phase-reversal T-junc-tion and a modified magic-T using substrate integrated waveguide(SIW) and slotline are proposed and developed for RF/microwaveapplications on the basis of the substrate integrated circuits con-cept. In this case, slotline is used to generate the odd-symmetricfield pattern of the SIW in the phase-reverse T-junction. Measuredresults indicate that 0.3-dB amplitude imbalance and 3 phaseimbalance can be achieved for the proposed 180 phase-reversalT-junction over the entire -band. The modified narrowbandand optimized wideband magic-T are developed and fabricated,respectively. Measured results of all those circuits agree well withtheir simulated ones. Finally, as an application demonstrationof our proposed magic-T, a singly balanced mixer based on thisstructure is designed and measured with good performances.

Index Terms—Magic-T, 180 phase-reverse T-junction, slotline,substrate integrated circuits (SICs), substrate integrated wave-guide (SIW).

I. INTRODUCTION

A SLOTINE presents advantages in the design of mi-crowave and millimeter-wave integrated circuits, espe-

cially when solid-state active devices are involved. Recently,the substrate integrated circuits (SICs) concept, involving thesubstrate integrated waveguide (SIW) technique and othersynthesized nonplanar structures in planar form with planarcircuits, has been demonstrated as a very promising scheme forlow-cost, small size, relatively high power, low radiation loss,and high-density integrated microwave and millimeter-wave

Manuscript received December 22, 2009; revised May 21, 2010; acceptedSeptember 08, 2010. Date of publication December 03, 2010; date of currentversion January 12, 2011. This work was supported in part by the Natural Sci-ences and Engineering Research Council of Canada (NSERC), in part by theNational 973 Project of China under Grant 2010CB327400 and in part by theNational Nature Science Foundation of China (NSFC) under Grant 60921063.

F. F. He is with the Poly-Grames Research Center, Department of ElectricalEngineering, École Polytechnique de Montreal, Montreal, QC, Canada H3C3A7, and also with the State Key Laboraotry of Millimeter Waves, College ofInformation Science and Engineering, Southeast University, Nanjing 210096,China (e-mail: [email protected]).

K. Wu, L. Han, and X. Chen are with the Poly-Grames Research Center, De-partment of Electrical Engineering, École Polytechnique de Montreal, Montreal,QC, Canada H3C 3A7 (e-mail: [email protected]).

W. Hong is with the State Key Laboratory of Millimeter Waves, College ofInformation Science and Engineering, Southeast University, Nanjing 210096,China (e-mail: [email protected]).

Color versions of one or more of the figures in this paper are available onlineat http://ieeexplore.ieee.org.

Digital Object Identifier 10.1109/TMTT.2010.2091195

components and systems [1]–[6]. Alternatively named inte-grated waveguide structures of the SIW, such as laminatedwaveguide or post-wall waveguide, can be found in [7] and [8].The transitions from the SIW to slotline [9] have already beeninvestigated theoretically and experimentally, which provide adesign base to integrate SIW circuits with slotline circuits.

As a fundamental and important component, the magic-T haswidely been used in microwave and millimeter-wave circuitssuch as balanced mixers, power combiners or dividers, balanceamplifiers, frequency discriminators, and feeding networks ofantenna array [10], [11]. Following intensive investigationsof SIW components and systems in the past ten years, moreand more attention is being paid to integrate the conventionalmagic-T based on SIW technology. Some SIW-based magic-Tstructures have been proposed and studied [9], [12], [13].In [12] and [13], magic-T techniques were developed usingmultilayer low-temperature co-fired ceramic (LTCC) or printedcircuit board (PCB) processes. An SIW planar magic-T wassuccessfully designed with relatively narrowband character-istics in [9]. This magic-T consisting of an SIW T-junction,a slotline T-junction, and two phase-reverse slotline-to-SIWT-junctions, and it has an 8% bandwidth centered at 9 GHz with0.2-dB amplitude and 1.5 phase imbalances. In this paper, amodified version of a planar SIW magic-T, which only consistsof a phase-reverse slotline-to-SIW T-junction and an -planeSIW T-junction, is proposed and presented, as shown in Fig. 1,which has smaller size and wider bandwidth than its previousversion [9].

Described in Section II are the analysis and discussions of theproposed 180 phase-reversal slotline-to-SIW T-junction withits simulated and measured results. In Section III, the modifiedplanar magic-T structures with direct design and with furtheroptimization are discussed with their transmission line models.Measured results agree with simulated results very well. Ad-ditional wideband slotline-to-microstrip and SIW-to-microstriptransitions are designed for port-to-port measurements of mi-crostrip line in support of experimental characterization of theproposed structures. In the end, a singly balanced mixer basedon our modified wideband magic-T is developed. All the struc-tures in this paper are simulated with means of the full-wavesimulation tool Ansoft HFSS, designed and fabricated on anRT/Duroid 6010 substrate with a dielectric constant of 10.2 anda thickness of 0.635 mm.

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HE et al.: PLANAR MAGIC-T STRUCTURE USING SICs CONCEPT AND ITS MIXER APPLICATIONS 73

Fig. 1. Physical 3-D configurations of the modified magic-T.

II. PHASE-REVERSAL SLOTLINE-TO-SIW T-JUNCTION

Here, the slotline-to-SIW T-junction acts as a mode converterbetween the slotline and SIW. Fig. 2(a) depicts the physical 3-Dconfiguration of the slotline-to-SIW T-junction, where isthe width of metallic slot, is the SIW width, andis the slotline width. The yellow (in online version) and darklayers are the top metal cover and bottom metal cover. The lightgray area means substrate. The slotline and SIW structures in-tersect with each other in which the slotline extends lengthinto the metallic cover of the SIW with a short-circuited termina-tion. Two via-posts with the diameter of are used to optimizethe return loss of the T-junction. Fig. 2(b) shows the cross sec-tion at the A–A plane, where the orientation of electric fieldsis sketched. When the signal is coupled from the slotline intothe SIW at the A–A plane, the electric fields of the slotlinemode are converted to those of the half-mode SIW (or HMSIW)mode [14] because of overlapped metallic covers on the top andbottom of the SIW. As such, two phase-reverse waves come outof ports P2 and P3.

Fig. 2(c) shows the equivalent circuit model of the T-junction.The model is similar to that of an -plane waveguide T-junc-tion due to their similar electric field conversion. and arethe characteristic admittances of the slotline and HMSIW, re-spectively. In the equivalent circuit, is used instead of theSIW characteristic admittance because both of them have al-most the same value. Based on the above principle, parameters

, , and are mainly dependent on slotline’s length, width , and at the slotline port (port 1), and

mainly depends on the SIW width . Therefore, the rela-tionship between parameters of the equivalent circuit and returnloss at port 1 is replaced by that between parameters of phys-ical configuration and return loss at port 1. In order to minimizeany potential radiation loss while transmitting signal from theslotline to the SIW, a possible minimum width of the slot line ischosen as mm.

Fig. 2. (a) Physical description and parameters of the slotline-to-SIW T-junc-tion. � � �� mm, � � �� mm, � � �� mm, � � �� mm,� � � mm, and � � � mm. (b) Electric field distribution at cross sectionA–A plane. (c) Equivalent circuit for the slotline-to-SIW T-junction.

Fig. 3 shows simulated and measured frequency responses ofpower dividing and return loss of the 180 phase-reversal slot-line-to-SIW T-junction. The imbalance in amplitude and phaseare, respectively, 0.3 dB and 3 , as shown in Fig. 4. These resultssuggest that the junction has broadband characteristics. Fig. 5presents a photograph of the T-junction.

III. MODIFIED PLANAR SLOTLINE-TO-SIW MAGIC-T

A. Magic-T Circuit Configuration and Operating Principle

Fig. 1 describes the physical 3-D configuration of the pro-posed magic-T. The yellow (in online version) and dark layersare the top metal cover and bottom metal cover. The light grayarea means substrate. The orange areas (in online version)are metallic slots for the SIW. This magic-T consists of anSIW -plane T-junction and a slotline-to-SIW T-junction.Two such T-junctions share the two common arms with 45rotation. Metallic vias V1 and V2 with diameter are used toconstruct the SIW -plane T-junction. Ports 1 ( port) and 4( port) are sum and difference ports, respectively, while ports2 and 3 are the power dividing arms. Without the microstripline-to-SIW and slotline-to-microstrip line transitions, the sizeof the magic-T is about 20 mm 20 mm. A signal applied to


Fig. 3. Simulated and measured frequency responses of power dividing andreturn loss for the 180 slotline-to-SIW T-junction.

Fig. 4. Measured amplitude and phase imbalances of the slotline-to-SIWT-junction.

Fig. 5 Photograph of the slotline-to-SIW T-junction. Left and right figures arethe top view and bottom view, respectively.

port 1 is split into two in-phase components by metallic via V1.The two components cancel each other at the slotline, whileport 4 is isolated. In this case, the four-port junction worksas an SIW -plane T-junction and the symmetrical planeA–B becomes a virtual open plane. Otherwise, the four-portjunction works as a slotline-to-SIW T-junction and the planeA–B becomes a virtual ground plane when a signal is appliedto port 4. The input signal is naturally split into two equal andout-of-phase signals at ports 2 and 3, and port 1 is isolated inthis case.

Fig. 6. Corresponding equivalent circuit of the magic-T.

Fig. 7. Simplified equivalent circuits of the magic-T. (a) In-phase. (b) Out-of-phase.

The operating principle of the modified magic-T canalso be well explained by its corresponding equivalent cir-cuit at the working frequency shown in Fig. 6, where theslot-to-SIW T-junction can be seen as an ideal transformerand the SIW -plane T-junction as a divider. Parameters

, , , and stand for the characteristicimpedances, slotline, ground slotline, HMSIW, and SIW, re-spectively. In the in-phase case, the equivalent circuit modelwill further be simplified as depicted in Fig. 7(a), when

at the working frequency. Inthe out-of-phase case, the simplified equivalent is shown inFig. 7(b), where . On the basis of the above dis-cussion, distances and should depend on the positionsof the three metallic vias in the magic-T circuit.

B. Implementation and Results

Based on the above-stated principle, two magic-T struc-tures are designed and fabricated on an RT/Duroid 6010LM


Fig. 8. Photograph of the modified magic-T. Left and right figures are the topview and bottom view, respectively.

TABLE IDIMENSIONS OF THE MODIFIED NARROWBAND MAGIC-T

substrate, respectively, with narrowband and wideband char-acteristics. Thus, the narrowband and wideband cases of themagic-T will be discussed separately. Fig. 8 shows the top viewand bottom views of the modified magic-T’s photograph. Fromthis photograph, we can estimate that the size of the magic-T isreduced by near 50% with reference to [9].

1) Narrowband Case: The two out-of-phase signals canceleach other at port 1 as described in Section II-A, and simulta-neously the distance is equal to a quarter of the guide wave-length of the SIW at the working frequency. Thus, the workingbandwidth of the return loss at port 4 should be narrow in a sim-ilar manner to the previous design [9]. However, the workingbandwidth judging from the return loss at port 1 should be widerbecause the two in-phase signals cancel each other in the slotlineat port 4. In this demonstration, the magic-T was designed at 9GHz. All design parameters of the magic-T are listed in Table I.

Fig. 9 shows the return loss and insertion loss of the fabri-cated narrowband magic-T. is lower than 15 dB from 8.7to 9.4 GHz with a 7.8% bandwidth, which has validated theabove discussion. Within the frequency range of interest, theminimum insertion loss is 0.7 dB and it is less than 0.8 dB inboth in-phase and out-of-phase cases. Simulated and measuredisolation characteristics are described in Fig. 10. The isolationis better than 30 dB between ports 1 and 4, and better than 20 dBbetween ports 2 and 3 over the entire frequency range. As shownin Fig. 11(a) and (b), the maximum phase and amplitude imbal-ances for both in-phase and out-of-phase cases are less than 1.5and 0.5 dB, respectively.

2) Wideband Case: The narrowband characteristics of thismagic-T have well been confirmed in the above discussion.However, an interesting outcome can be observed in that the re-turn-loss defined bandwidth can be broadened by optimizing theparameter values of , , , and . When the signalflows into the SIW from the slotline in this slotline-to-SIWstructure, it would be split into two components and each ofthem will propagate along line at the working frequency, as

Fig. 9. Simulated and measured frequency responses of the magic-T. (a) Returnloss. (b) Insertion loss.

Fig. 10. Simulated and measured isolation characteristics of the magic-T.

shown in Fig. 1. Nevertheless, the propagating directions beingdifferent slightly at different frequencies provide a possibilityof broadening the bandwidth of the magic-T. In other words,it is possible for the magic-T to simultaneously realize ,

and , at twodifferent frequencies. In our proposed broadband design, thesetwo frequencies are set at 8.7 and 9.8 GHz. Through optimiza-tion, some geometrical parameters of magic-T are changed


Fig. 11. Measured results of amplitude and phase imbalance characteristics ofthe magic-T. (a) Amplitude. (b) Phase.

such that mm, mm, mm,and mm.

Fig. 12(a) shows the newly designed magic-T’s simulated andmeasured return losses at each port. Among the results, simu-lated indicates that the above two geometrical conditionsfor achieving broadband performances are readily satisfied at8.7 and 9.8 GHz. Measured return loss is better than 15 dB from8.4 to 10.6 GHz with 23.2% bandwidth. In this broadband fre-quency range, the insertion loss is less than 0.9 dB and the min-imum insertion loss is 0.7 dB in both in-phase and out-of-phasecases, as shown in Fig. 12(b). Measured and simulated isola-tion curves between port 1 and port 4 or port 2 and port 3 areplotted in Fig. 13. In addition, the amplitude and phase imbal-ances of the magic-T are 2 and 0.5 dB, respectively, as shownin Fig. 14(a) and (b). Measured results of all circuits agree wellwith their simulated counterparts.

IV. MODIFIED MAGIC-T’s APPLICATION IN MIXER DESIGN

As a practical and straightforward demonstration of ourmodified magic-T applications, a singly balanced mixer isdesigned, as shown in Fig. 15. Fig. 16 shows the photographof the practical mixer. An antiparallel pair of series connected

Fig. 12 Simulated and measured frequency responses of the magic-T. (a) Re-turn loss. (b) Insertion loss.

Fig. 13. Simulated and measured isolation characteristics of the magic-T.

diodes (SMS7630-006LF from Skyworks Inc., Woburn, MA)is adopted. Generally, a quarter-wavelength short stub in thematching circuit is need for providing a dc return and goodIF-to-RF and IF-to-local oscillator (LO) isolations. However,a matching circuit is designed between the diode and SIWwithout using a quarter-wavelength short stub because the SIWis grounded inherently. Two open-circuited stubs on


Fig. 14. Measured results of amplitude and phase imbalance characteristics ofthe magic-T. (a) Amplitude. (b) Phase.

Fig. 15. Circuit topology of the proposed mixer.

the right side of the diodes pair are used to provide a terminalvirtual grounding point for LO frequency and RF frequencysimultaneously. In addition, a low-pass filter is designed tosuppress LO and RF signals at IF port. The mixer designed andsimulated by the harmonic balance (HB) method in AgilentADS software combined with measured -parameters of thewideband magic-T structure.

Fig. 17 depicts the measured conversion loss versus LO inputpower level when the IF signal is fixed at 1 GHz with an inputpower level of 30 dBm and LO frequency is fixed at 10.2 GHz.When the LO input power level is larger than 13 dBm, the con-version loss almost is about 7.4 dB. Fig. 18 shows the measuredconversion loss versus IF frequency when the IF signal is swept

Fig. 16. Photograph of the mixer.

Fig. 17. Measured conversion loss versus LO input power.

Fig. 18. Measured conversion loss versus IF frequency.

from 0.1 to 4 GHz (RF is from 10.1 to 6.2 GHz) with a constantinput power level of 30 dBm, and the LO signal is fixed at thefrequency of 10.2 GHz with a 13-dBm power level. The mea-sured conversion loss is about 8 0.6 dB over the IF frequencyrange of 0.1–3 GHz (RF is from 7.2 to 10.1 GHz). Fig. 19plots the measured conversion loss versus input RF power level,where RF frequency is set at 9.2 GHz and LO frequency is at10.2 GHz with a power level of 13 dBm, input RF power levelis swept from 30 to 5 dBm. The output IF power almost in-creases with the RF power linearly when the RF power level isless than 3 dBm. On the other hand, when the RF power levelis larger than 0 dBm, the mixer is driven into the nonlinearityregion. From this figure, it can also be seen that the input 1-dB


Fig. 19. Measured IF output power versus RF input power

compression point is around 3 dBm. Moreover, the LO-to-IFisolation is about 40 dB. All the measurement results dictatethat this mixer is suitable for wideband applications.

V. CONCLUSION

The slotline-to-SIW 180 reversal T-junction with its simpleequivalent circuit model has been presented. The modified SIWmagic-Ts were then developed with narrowband and widebandcases, respectively. The operating principles and transmissionline models for both cases have also been presented. Good per-formances related to the insertion loss, isolation, and balancewere observed for our fabricated prototypes designed over theentire -band. Finally, a singly balanced mixer based on themodified magic-T was designed to validate the magic-T. Thosenovel structures are key components for designing integratedmicrowave and millimeter-wave circuits and systems such asthe antenna feed network and mono-pulse radar.

ACKNOWLEDGMENT

The authors would like to thank the Rogers Corporation,Rogers, CT, for providing the free samples of the RT/Duroid6010LM substrate and to S. Dubé and A. Traian, both withthe Poly-Grames Research Center, Montreal, QC, Canada, forthe fabrication of the experimental prototypes. The authorsalso thank the anonymous reviewers for their comments andsuggestions on this paper.

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[4] P. Chen, W. Hong, Z. Q. Kuai, J. F. Xu, H. M. Wang, J. X. Chen, H.J. Tang, J. Y. Zhou, and K. Wu, “A multibeam antenna based on sub-strate integrated waveguide technology for MIMO Wireless Communi-cations,” IEEE Trans. Antennas Propag., vol. 57, no. 6, pp. 1813–1821,Jun. 2009.

[5] D. Deslandes and K. Wu, “Integrated microstrip and rectangular wave-guide in planar form,” IEEE Microw. Wireless Compon. Lett., vol. 11,no. 2, pp. 68–70, Feb. 2001.

[6] J. X. Chen, W. Hong, Z. C. Hao, H. Li, and K. Wu, “Developmentof a low cost microwave mixer using a broadband substrate integratedwaveguide (SIW) coupler,” IEEE Microw. Wireless Compon. Lett., vol.16, no. 2, pp. 84–86, Feb. 2006.

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[14] W. Hong, B. Liu, Y. Q. Wang, Q. H. Lai, H. J. Tang, X. X. Yin, Y. D.Dong, Y. Zhang, and K. Wu, “Half mode substrate integrated wave-guide: A new guided wave structure for microwave and millimeterwave application,” in Joint 31st Int. Infrared Millim. Waves Conf./14thInt. Terahertz Electron. Conf., Shanghai, China, Sep. 18–22, 2006, p.219.

Fan Fan He was born in Nanjing, China. He receivedthe M.S. degree in mechanical–electrical engineeringfrom Xidian University, Xi’an, China, in 2005, andis currently working toward the Ph.D. degree in elec-trical engineering both at Southeast University, Nan-jing, China, and the École Polytechnique de Mon-tréal, Montréal, QC, Canada, as an exchange student.

His current research interests include advancedmicrowave and millimeter-wave components andsystems.

Ke Wu (M’87–SM’92–F’01) is currently a Professorof electrical engineering and Tier-I Canada ResearchChair in RF and millimeter-wave engineering withthe École Polytechnique de Montreal, Montreal,QC, Canada. He also holds the first Cheung Kongendowed chair professorship (visiting) with South-east University, the first Sir Yue-Kong Pao chairprofessorship (visiting) with Ningbo University,and an honorary professorship with the NanjingUniversity of Science and Technology and the CityUniversity of Hong Kong. He has been the Director

of the Poly-Grames Research Center and the Director of the Center forRadiofrequency Electronics Research of Quebec (Regroupement stratégique ofFRQNT). He has authored or coauthored over 630 referred papers and a numberof books/book chapters. He holds numerous patents. He has served on theEditorial/Review Boards of many technical journals, transactions and letters,as well as scientific encyclopedia as both an editor and guest editor. His currentresearch interests involve SICs, antenna arrays, advanced computer-aideddesign (CAD) and modeling techniques, and development of low-cost RF andmillimeter-wave transceivers and sensors for wireless systems and biomedicalapplications. He is also interested in the modeling and design of microwavephotonic circuits and systems.


Dr. Wu is a member of the Electromagnetics Academy, Sigma Xi, and theURSI. He is a Fellow of the Canadian Academy of Engineering (CAE) and theRoyal Society of Canada (The Canadian Academy of the Sciences and Human-ities). He has held key positions in and has served on various panels and in-ternational committees including the chair of Technical Program Committees,International Steering Committees, and international conferences/symposia. Hewill be the general chair of the 2012 IEEE Microwave Theory and TechniquesSociety (IEEE MTT-S) International Microwave Symposium (IMS). He is cur-rently the chair of the joint IEEE chapters of the IEEE MTT-S/Antennas andPropagation Society (AP-S)/Lasers and Electro-Optics Society (LEOS), Mon-treal, QC, Canada. He was an elected IEEE MTT-S Administrative Committee(AdCom) member for 2006–2009. He is the chair of the IEEE MTT-S Transna-tional Committee. He is an IEEE MTT-S Distinguished Microwave Lecturer(2009–2011). He was the recipient of many awards and prizes including thefirst IEEE MTT-S Outstanding Young Engineer Award and the 2004 FessendenMedal of the IEEE Canada.

Wei Hong (M’92–SM’07) was born in HebeiProvince, China, on October 24, 1962. He receivedthe B.S. degree from the Zhenzhou Institute ofTechnology, Zhenzhou, China, in 1982, and theM.S. and Ph.D. degrees from Southeast University,Nanjing, China, in 1985 and 1988, respectively, allin radio engineering.

Since 1988, he has been with the State Key Lab-oratory of Millimeter Waves, Southeast University,where he is currently a Professor and the AssociateDean of the Department of Radio Engineering.

In 1993 and from 1995 to 1998, he was a short-term Visiting Scholar withthe University of California at Berkeley and the University of Santa Cruz,respectively. He has authored or coauthored over 200 technical publications.He authored Principle and Application of the Method of Lines (SoutheastUniv. Press, 1993, in Chinese) and Domain Decomposition Method for EMBoundary Value Problems (Sci. Press, 2005, in Chinese). He has been engagedin numerical methods for electromagnetic problems, millimeter-wave theoryand technology, antennas, electromagnetic scattering and RF technology formobile communications, etc.

Prof. Hong is a Senior Member of the China Institute of Electronics (CIE). Heis vice-president of the Microwave Society and Antenna Society of CIE. He hasbeen a reviewer for many technical journals including the IEEE TRANSACTIONS

ON ANTENNAS AND PROPAGATION and is currently an associate editor for theIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. He was atwo-time recipient of the First-Class Science and Technology Progress Prizeissued by the State Education Commission in 1992 and 1994. He was a recip-ient of the Fourth-Class National Natural Science Prize in 1991, and the First-and Third-Class Science and Technology Progress Prize of Jiangsu Province.He was also the recipient of the Foundations for China Distinguished YoungInvestigators and the “Innovation Group” issued by the National Science Foun-dation of China.

Liang Han (S’07) was born in Nanjing, China. Hereceived the B.E. (with distinction) and M.S. degreesfrom Southeast University, Nanjing, China, in 2004and 2007, respectively, both in electrical engineering.He is currently working toward the Ph.D. degree inelectrical engineering at the École Polytechnique deMontréal, Montréal, QC, Canada.

His current research interests include advancedCAD and modeling techniques, and development ofmultifunctional RF transceivers.

Xiaoping Chen was born in Hubei province, China.He received the Ph.D. degree in electrical engineeringfrom the Huazhong University of Science and Tech-nology, Wuhan, China, in 2003.

From 2003 to 2006, he was a Post-DoctoralResearcher with the State Key Laboratory of Mil-limeter-waves, Radio Engineering Department,Southeast University, Nanjing, China, where he wasinvolved with the design of advanced microwaveand millimeter-wave components and circuits forcommunication systems. In May 2006, he worked

as a Post-Doctoral Research Fellow with the Poly-Grames Research Center,Department of Electrical Engineering, Ecole Polytechnique (University ofMontréal), Montréal, QC, Canada, where he is currently a Researcher Asso-ciate. He has authored or coauthored over 30 referred journals and conferencepapers and some proprietary research reports. He has been a member of theEditorial Board of the IET Journal. He holds several patents. His currentresearch interests are focused on millimeter-wave components, antennas, andsubsystems for radar sensors.

Dr. Chen has been a reviewer for several IEEE publications. He was the re-cipient of a 2004 China Postdoctoral Fellowship. He was also the recipient ofthe 2005 Open Foundation of the State Key Laboratory of Millimeter-waves,Southeast University.

A Planar Magic-T Structure Using Substrate Integrated Circuits Concept and Its Mixer Applications

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