A Breakthrough Technology for High Power RF … Class C operation Exceptional efficiency: •28% (DVB-T OFDM Signal, 64 QAM) •45% (Two-tone Test) Leading efficiency and low thermals

TM

Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009.

A Breakthrough Technology for High Power RF Applications-50 V LDMOS Products

Tiefeng ShiSenior Applications Engineer

August, 2009

TM

2Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009.

Outline

►Freescale Semiconductor Inc. Overview►RF Power Transistors►In-depth Study of LDMOS Structure For Broadcast

• Cross-Section of an FSL LDMOS device• Ruggedness in MOSFETs• Enhanced ESD• The advantage of 50 V in Broadcast Applications

►Design Examples for Broadcast►Design Examples for ISM►Advantages in Freescale Technical support►Session Wrap-up and Q & A

TM

3Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. 3333

Global leadership inembedded processing and connectivity solutions

Source: iSuppli, Gartner, IDC and company estimates

#1 in RF for Wireless Infrastructure

#1 Supplier of Automotive ICs

#1 in Communications Processors

1 of every 2 new carsworldwide are

powered by Freescale Technology

Have shipped more than 185 million

communications processor units

Shipped 18 Microcontrollers

every second in 2008

Nearly 7 of every 10mobile phone calls are made

using FreescaleBase Station Products #2 Supplier of

Microcontrollers

Shipped 9 Industrialmicrocontrollers

every second in 2008

TM


Internal Worldwide Manufacturing

Asia Pacific/JapanEMEAAmericas

Freescale ChandlerFab – 8”

Chandler, AZ

Freescale Oak HillFab – 8”

Austin, TX

Freescale AustinTechnology & Mfg

Fab – 8”Austin, TX

Freescale Toulouse Fab – 6”

Toulouse, France

Freescale KualaLumpur Final Mfg-

Kuala Lumpur, Malaysia

Freescale Tianjin Final Mfg

Tianjin, China

Freescale Sendai Fab-6”

Sendai, Japan

TM


RF, Analog & Sensor Group

Sources: iSuppli, Gartner

RF Analog Sensor

► Dedicated, performance-optimized portfolio for all key communication standards

► Most advanced multi-stage IC portfolio

► Only vendor offering high-power, cost-effective over-molded plastic packaging

► Leveraging history of leadership and experience to deliver innovative products to new markets

► Leadership in Doherty amplifiers

► Portfolio: >350

► Integration Capability:► Best-in-class combination

of analog, power and logic ► SiP integration to

complement on-chip integration

► Focusing on building IP portfolio to enable rapid “assembly” of complex ICs

► Attach strategy to our processor portfolio

► Key market: auto

► Portfolio: >300

► Uniquely positioned with system-in-package (SiP) technology

► Leveraging high-volume, high-quality automotive manufacturing into consumer and industrial markets

► Creating portfolio of highly integrated, easy-to-use acceleration, pressure and proximity sensors

► Portfolio: >100

Market share position: #1 Market share position: #8 Market share position: #3

TMFreescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009.

RF Power Transistors

TM


Our RF Power Solutionshave a long history of enabling billions ofcell phone connections around the globe –

paving the way to support a broad range of applications

TM


► Market share position: #1 in cellular infrastructure

► Dedicated, performance-optimized portfolio for all popular frequency bands

► Leader in reliability, performance and consistency

► Most advanced multi-stage IC portfolio► Only vendor offering high-power, cost-effective

over-molded plastic packaging ► Leveraging history of leadership and

experience to deliver innovative products to new markets

RF Power

Cellular Infrastructure

Broadcast

Industrial, Scientific & Medical

*Sources: Gartner Dataquest, Strategy Analytics

TM


Industry Leader in RF Power Packaging

► Most comprehensive portfolio of over-molded plastic and air-cavity packages

► Industry leader in RF power over-molded plastic packaging

► Offer high power RF solutions in both package options

► Compatibility with high temperature re-flow Pb-free solders

► Automated assembly manufacturing for consistency

► Dedicated packaging design center for system level application support

► Multiple assembly locations for secure supply

Freescale Advantage: Packaging

TM


RF Power Market Space (Freq vs. Power)

TM


Evolution of Freescale’s 50 V RF Power LDMOS

• VHV6 is a 50 V extension to Freescale’s widely accepted 28 V LDMOS technology• Key technology enhancement tailor-made for the Broadcast, Industrial, Scientific,

Medical (ISM) & now Commercial AerospaceCommercial Aerospace markets• Performance levels exceed those of competitive products

• High gain and efficiency figures• Low thermal resistance lessens the overall cooling capacity needed by the transmitter• Multiple technology innovations produce extremely rugged device

• Higher power density means more power per device... so less devices per system!• Significant cost and board space savings

TM


RF Power Market Focus

Industrial, Scientific, Medical Broadcast

Microwave (Aerospace)

• CO2 Laser Applications• Magnetic Resonance Imaging (MRI)• Semi Mfg. Equipment• Alternative Energy

• Air Traffic Management• Automatic Dependent Surveillance Broadcast• Weather Radar

• Analog & Digital FM & TV• HF/VHF Communication Equipment

TM


Broadcast Portfolio Overview

TM


Broadcast Portfolio

TM


Broadcast Line-up Examples


In-depth Study of LDMOS Structure For Broadcast

TM


Cross-Section of an FSL LDMOS device

It includes a source metal region to electrically connect the N+ sourceto the p+ sinker, which in turn is connected to the back side source metalthrough the p+ substrate

TM


Ruggedness in MOSFETs

There are three basic ruggedness failure mechanisms that occur as a result of a drain impact ionization event which can result in extremely high power dissipation within the MOSFET and the associated thermal damage.

TM


LDMOS Ruggedness enhancement

Figure shows a cross section of a VHV6 LDMOS device from source to drain and shows impact ionization rates and locations for three different designs.

TM


Enhanced ESD

Standard ESD

-2.E-02-1.E-02-5.E-030.E+005.E-031.E-022.E-02

-15 -10 -5 0 5 10 15 20 25

Vgs (V)

I ESD

(A)

Enhanced ESD

-2.E-02-1.E-02-5.E-030.E+005.E-031.E-022.E-02

-15 -10 -5 0 5 10 15 20 25

Vgs (V)

I ESD

(A)

New, wider range ESD structure are designed for betteroverdrive capability and deeper Class C operating ranges

TM


The advantage of 50 V in Broadcast Applications - Power Density and Gain

►50 V LDMOS• 470 to 860 MHz BroadcastBroadcast device

450 W peak power output23 dB gain65% EfficiencyθJC– 0.27°C/W

►32 V LDMOS• 470 to 860 MHz Broadcast Broadcast device

300 W peak power output15 dB gain43% EfficiencyθJC– 0.32°C/W


Reference Designs with 50V LDMOS

TM


Broadcast Device Performance Table

TM


Broadcast UHF Band MRF6VP3450H Key Messages

Ultra EfficientUnprecedented Power Extremely Rugged

•23 dB Gain @ 90 W Avg. (DVB-T OFDM Signal, 64 QAM)•23 dB Gain @ 450 W PEP (Two-tone Test)

Less gain stages needed – saving cost and board space and improving reliability

Unprecedented power levels covering the UHF broadcast band

Operating at 50 V &1.4A with 450 W CW Power, the MRF6VP3450H can survive 10:1 VSWR at all phase angles

Higher range of negative gate-source voltage improves RF overdrive capability and Class C operation

Exceptional efficiency: •28% (DVB-T OFDM Signal, 64 QAM)•45% (Two-tone Test)

Leading efficiency and low thermals decrease operating cost for TV broadcasters

Multiple technology breakthroughs enable the MRF6VP3450H to handle

stringent mismatched and PAR conditions

50 V VHV6 LDMOS: A key technology enhancement, tailor-made

for Broadcast& ISM markets

Careful attention to the device’s thermal design to maintain a low operating junction temperature

Revolutionizing the Broadcast industry with unprecedented combination of power, ruggedness and efficiency.

Low thermal resistance lessens the overall cooling capacity needed by the transmitter

Incorporates protection against electrostatic discharge (ESD), making it manufacturing friendly

TM


Freescale Broadcast – MRF6VP3450H► Uncompromised ruggedness► 50 Volt VHV6. High gain, efficiency linearity► Designed in at key players in the UHF broadcast industry

TM


Broadcast – MRF6VP3450H CW Performance► Uncompromised ruggedness, 10:1 VSWR @450W CW

450WCW@Idq=1.4A/50V

20

25

30

35

40

45

50

55

60

65

70

470 520 570 620 670 720 770 820

Freq(MHz)

Gai

n(dB

)

5

7

9

11

13

15

17

19

21

23

25

EFF(%)Gain(dB)

TM


Broadcast – MRF6VP3450H CW Performance

MRF6VP3450 Power SWP

0

100

200

300

400

500

600

0 0.5 1 1.5 2 2.5 3 3.5 4

Pin(W)

Pout

(W)

15

16

17

18

19

20

21

22

23

24

25

470MPo510MPo560Po610Po660Po710Po760Po810Po860Po470Gain510Gain560Gain610Gain660Gain710Gain760Gain810Gain860Gain

► High gain, efficiency and linearity

TM


Broadcast – MRF6VP3450H DVB-T Performance► High gain, efficiency and linearity for DVB-T

MRF6VP3450 DVB-T@90W

0

5

10

15

20

25

30

35

40

470 520 570 620 670 720 770 820

Freq(MHz)

Gai

n(dB

)&Pa

r(dB

c)&

eff(%

)

-35

-33

-31

-29

-27

-25

-23

-21

-19

-17

-15

Del

-M(d

Bc)

Gain(dB)Par(dB)Del_M_R(dBc)Eff(%)Del_M_L(dBc)

TM


Broadcast VHF&FM Band MRF6VP2600H Key Messages


•25 dB Gain @ 125 W Avg. (DVB-T OFDM Signal, 64 QAM)•22 dB Gain @ 600 W CW (352.2MHz 50V @150mA)


Unprecedented power levels covering the FM and VHF broadcast band

Operating at 50 V &0.15A with 600 W CW Power, the MRF6VP2600H can survive 10:1 VSWR at all phase angles


Exceptional efficiency: •28.5% (DVB-T OFDM Signal, 64 QAM)•68% (CW Test)

Leading efficiency and low thermals decrease operating cost for TV broadcasters and ISM

Multiple technology breakthroughs enable the MRF6VP2600H to handle





Revolutionizing the Broadcast industry with unprecedented combination of power, ruggedness ,efficiency and linearity.



TM


Freescale Broadcast FM– MRF6VP2600H► 50 Volt VHV6. High gain, efficiency and linearity► Designed in at key players in the FM/VHF broadcast industry► 120mmX73mm compact size► 87.5-108MHz► Pout : >600 CW► Gain : 22 dB min► Efficiency: > 80%► 50Ohm Plug & Play► Class AB operation

TM


Freescale Broadcast – MRF6VP2600H CW ► Pout : >600 CW with 22 dB gain min► Efficiency: > 78% @50Ohm Plug & Play

MRF6VP2600H CW Performance @FM

20

21

22

23

24

25

26

27

28

29

30

200 300 400 500 600 700

Output Power(W)

Gai

n(dB

)

50

55

60

65

70

75

80

85

EFF(

%)

Gian(dB)_87.5MHzGian(dB)_108MHzGian(dB)_98MHzEFF(%)_98MHzEFF(%)_87.5MHzEFF(%)_108MHz

TM


Freescale Broadcast – MRF6VP2600H [email protected]/50V► Pout : upto 150W with 22 dB gain min & 30dBc Del-M► Efficiency: > 27% @150W & 50Ohm Plug & Play

MRF6VP2600 VHF DVB-T @2.0A 50V

0

5

10

15

20

25

30

35

40 60 80 100 120 140 160

Pout(W)

Gai

n(dB

), Pa

r(dB

)&Ef

f(%

)

-45

-40

-35

-30

-25

-20

-15

DEL

--M

(dB

c)

Gain(dB)@195MHzEFF(%)@168MHzGain(dB)@225MHzPar(dB)@196MHzGain(dB)@225MHzPar(dB)@168MHzEFF(%)@196MHzGain(dB)@168MHzPar(dB)@168MHzEFF(%)@225MHzDelMR(dBc)@225MHzDelMR(dBc)@195MHzDelMR(dBc)@168MHz

Par

mailto:[email protected]

TM


Freescale Broadcast – MRF6VP2600H [email protected] 50V► Pout : 125W with 24 dB gain min ,Del-M <-30dBc► Efficiency: > 30 % & 50Ohm Plug & Play

MRF6VP2600H @125W DVB-T

0.00

5.00

10.00

15.00

20.00

25.00

30.00

35.00

40.00

175 185 195 205 215 225Freq(MHz)

Gai

n(dB

)&Ef

f(%)&

Par(d

B)

-40.00

-35.00

-30.00

-25.00

-20.00

-15.00

Del

M_R

&L(

dBc) Gain(dB)

EFF(%)

Par(dB)

Series9

DelM_L(dBc)

DelM_R(dBc)


TM


Freescale Broadcast HF– MRF6VP2600H► 50 Volt VHV6. High gain, efficiency and linearity► Designed in at key players in the HF broadcast industry► 2-30MHz► Pout : >500 CW► Gain : 26 dB min► Efficiency: > 70%► 50Ohm Plug & Play► Class AB operation

TM


MRF6VP2600H 2-30MHz CW Application FixturePower sweeps across frequency

MRF6VP2600H HF Band

20

21

22

23

24

25

26

27

28

29

30

0 100 200 300 400 500 600

Output Power (W)

Pow

er G

ain

(dB

)

0

10

20

30

40

50

60

70

80

90

100

EFF(

%)

Power Gain Drain Efficiency

30MHz

20MHz

10MHz

5MHz

Vdd-48V, Idq=150mA

TM


Broadcast FM Band MRF6VP11KH Key Messages


•24 dB Gain @ 900 W •24 dB Gain @ 1000 W Peak (100uS Pulse width, 20% Duty Cycle)


Unprecedented power levels covering the FM broadcast band

Operating at 50 V &0.15A with 1000 W Peak Power Power, the MRF6VP21KH can survive 10:1 VSWR at all phase angles


Exceptional efficiency: •74% (CW FM Band)•67% (Pulsed Test)

Leading efficiency and low thermals decrease operating cost for FM Band

Multiple technology breakthroughs enable the MRF6VP11KH to handle





Revolutionizing the Broadcast industry with unprecedented combination of power, ruggedness, efficiency and linearity.



TM


Freescale Broadcast – MRF6VP11KH► 50 Volt VHV6. High gain and efficiency► Designed in at key players in the FM broadcast industry► 120mmX73mm compact size, Water and Forced-Air cooling► 87.5-108MHz► Pout : >900W Ave.► Gain : 24.5 dB min► Efficiency: > 74%► 50Ohm Plug & Play► Class AB operation

TM


Freescale Broadcast – MRF6VP11KH 0.15A/50V► Pout : up to 1000W with 24.5 dB gain min► Efficiency: > 74% @900W & 50Ohm Plug & Play

MRF6VP11kH, Water cooled CW @ 88-108MHz

24

25

26

27

28

29

30

150 250 350 450 550 650 750 850 950 1050

Pout (Watt)

Gai

n (d

B)

50

55

60

65

70

75

80

88MHz-Gain 98MHz-Gain 108MHz-Gain 88Mhz-Eff 98MHz-Eff 108MHz-Eff

TM


Freescale Broadcast – MRF6VP11KH 0.15A/50V► Gain Flatness : < 0.7dB of Gain flatness across 87.5-108MHz @ 700W ► Efficiency Flatness : <5% Eff flatness across 87.5-108MHz @ 700W

MRF6VP11kH, Water cooled CW 88.5MHz-108MHz @700W

20

22

24

26

28

30

85 90 95 100 105 110

Freq (MHz)

Gai

n (d

B)

50

55

60

65

70

75

80

Eff (

%)

Gain Eff

TM


Broadcast VHF Band MRF6VP21KH Key Messages


•24 dB Gain @ 200 W Aer.(DVB-T OFDM Signal, 64 QAM)•24 dB Gain @ 1000 W Peak (100uS Pulse width, 20% Duty Cycle)


Unprecedented power levels covering the VHF broadcast band

Operating at 50 V &0.15A with 1000 W Peak Power Power, the MRF6VP21KH can survive 10:1 VSWR at all phase angles


Exceptional efficiency: •30% (DVB-T OFDM Signal, 64 QAM)•67% (Pulsed Test)

Leading efficiency and low thermals decrease operating cost for TV broadcasters

Multiple technology breakthroughs enable the MRF6VP21KH to handle





Revolutionizing the Broadcast industry with unprecedented combination of power, ruggedness, efficiency and linearity.



TM


Freescale Broadcast – MRF6VP21KH► 50 Volt VHV6. High gain, efficiency and linearity► Designed in at key players in the VHF broadcast industry► 120mmX73mm compact size, Water and Forced-Air cooling► 175-225MHz► Pout : >200W Ave.► Gain : 24 dB min► Efficiency: > 30%► 50Ohm Plug & Play► Class AB operation

TM


Freescale Broadcast – MRF6VP21KH [email protected]/50V► Pout : up to 200W with 24 dB gain min & 30dBc Del-M

► Efficiency: > 30% @200W & 50Ohm Plug & Play

MRF6V21KH VHF DVB-T Water Cooling @ TC=25 degree C

0

5

10

15

20

25

30

35

40

20 70 120 170

Pout(W)

Gai

n(dB

)&EF

F(%

)&PA

R(d

B)

-35

-33

-31

-29

-27

-25

-23

-21

-19

-17

-15

Del

_M(d

Bc)

Gain(dB)@200MHzPAR(dB)@200MHzEFF(%))@200MHzGain(dB)@175MHzPAR(dB)@225MHzEFF(%))@175MHzGain(dB)@225MHzPAR(dB)@175MHzEFF(%))@225MHzDelM_L(dBc)@225MHzDelM_L(dBc)@200MHzDelM_L(dBc)@175MHz





Freescale ISM Solutions50 V LDMOS

TM


Typical ISM Applications: MRI

•Suggested Freescale RF Devices for MRI applications:

•MRF6VP11KH

•MRF6VP2600H

•MRF6V2010N

TM


Typical ISM Applications: Lighting

•Suggested Freescale RF Devices for Lighting applications:

•MRF6V2300N

•MRF6V2010N

•MRFE6S9060N

TM


Freescale ISM – MRF6VP41KH• MRF6VP41KH/HS

• 1000 W pulse or 100W CW device•. Frequency range of 10 to 500 MHz

• Intended for industrial, scientific, and medical applications• Production test conditions:

• Frequency = 450 MHz• Output Power of 1000 watts pulsed CW• Pulse width = 100μsec, Duty cycle = 20% (500μsec)• Vdd = 50 volts, Idq = 150 mA

• Typical device performance:

Freq (MHz) Pin (W) Pout (W) Gain (dB) IRL (dB) IRL (mag) Period (usec) Width (usec) Eff (%)450.00 9.19 999.46 20.37 -18.55 0.02 500.00 99.91 64.68

TM


MRF6VP41KH/HS1 kW Peak Push-Pull HF/VHF Device

► First 1 kW Peak rated LDMOS device• P1 dB – 1092 W, Efficiency – 64%• P3 dB – 1235 W, Efficiency – 69%• θJC– 0.03°C/W (pulsed conditions)

MRF6VP41KH Drivedown at 450 MHz

13

14

15

16

17

18

19

20

21

0 200 400 600 800 1000 1200 1400

Output Power (W)

Pow

er G

ain

(dB)

0

10

20

30

40

50

60

70

80

Drai

n E

ffici

ency

(%)

Gain Drain Efficiency

Vdd = 50V, Idq = 150mAF = 450 MHz100usec, 20%

P1dB=1092 W

P3dB=1235 W

TM


MRF6VP41KH 352.2 MHz 1 kW CW– Experimental Test Fixture

• Based on the bolt hole temperature measurement of 39.7 C and a Pdiss of 563 W.

• This calculation uses 0.17 C/W for the device and 0.1 C/W for bolt hole to case.

• Summary of CW testing of the 6VP41KH at 352.2 MHz• Higher drain efficiency >65%• Bolt hole temperature = 39.7 C, Return is 20.48 C

Part ID Freq (MHz) Pin (W) Pout (W) Gain (dB) IRL (dB) Eff (%) Vdd (V) Vgs (V) Id (A) Idq (A)30 min 352.2 9.0203 1029.438 20.574 -12.848 64.637 50.073 2.252 31.809 0.15

TM


MRF6VP41KH 352.2 MHz 1 kW CW- Experimental Test Fixture

Pictures show test fixture with water cooled heat-sink and water cooling system.

TM


►MRF6VP11KH/HS• 1000 W pulse or 100W CW device• Frequency range of 10 to 150 MHz

►Intended for industrial, scientific, and medical applications►Production test conditions:

• Frequency = 130 MHz• Output Power of 1000 watts pulsed CW• Pulse width = 100μsec, Duty cycle = 20% (500μsec)• Vdd = 50 volts, Idq = 150 mA• Thermal resistance : 0.03 ˚C/W for pulse

► 0.13 ˚C/W for CW @100MHz

Freescale ISM – MRF6VP11KH

TM


Freescale ISM – MRF6VP11KH Pulsed ► Pout : up to 1400 with 25 dB gain min► Efficiency: > 70% @1400W & 50Ohm Plug & Play

MRF6VP11KH

0

10

20

30

40

50

60

70

80

100 300 500 700 900 1100 1300 1500

Pout(W)

EFF

(%)

17

18

19

20

21

22

23

24

25

26

27

Gai

n(dB

)

Eff(%)@130MHzGain(dB)@130MHz

TM


Freescale ISM – MRF6VP11KH for MRI► 50 Volt VHV6. High gain, efficiency and linearity► 15MHz, 600uS 30%► Pout : >1000W Ave.► Gain : 26 dB min► Efficiency: > 65%► 50Ohm Plug & Play► Class AB operation

TM


MRF6VP11KH 15.17MHz Pulse CW Application Fixture

TM


MRF6VP11KH 15.17MHz Pulse CW Application Fixture

Pulsed Test Data- Power Sweep

MRF6VP11KH 15 MHz

24

25

26

27

28

29

0 200 400 600 800 1000 1200

Output Power (W)- Peak

Pow

er G

ain

(dB

)

20

30

40

50

60

70

Dra

in E

ffici

ency

(%)

Power Gain Drain Efficiency


Freescale Technical Support

TM


Supporting Customers at Every Step of the Design Process

► Custom Circuit Tuning► Loadpull► Ruggedness► Digital Pre-Distortion► Temperature Characterization

Device Evaluations

► 2-Stage Devices► Dual-Path Devices ► Asymmetric, Dual-Path► Integrated Doherty Splitting /

Combining

Integration Strategy

Reference Designs► Line-Up Demonstrations► Symmetrical Doherty► Multi-stage Doherty► Asymmetrical Doherty► Smart Demo Boards / Reference

Designs/ Co design

Integrated Devices► MD7IC21080N► MD7IC21270H► MD7S21300H► MD8IC21200HS

0805

0805

MR

F6P21190H

0805

0805

0805

0805

+10V+28V

0805

C- JT- 05- 05- 0- Rev1

+10V

C19

R3

C21

R53

R7

T1

U1

R43

R6R23

C19R3

C21

R44

R7

T1

U1C20R54R84

R6R24

+28V0805

+28V

0805

VGG

C21

C20

R41R51

R6R7

T1

U1R81

R21

R1

R3

VGG

C19

R1 C21C20

R3

R42 R52

R6

R7

T1

U1

R82

R22

C19

+28V

R1

R1

R83

R9

C15

0805

0805

0805

C6

C5

C7 C9 C11 C13

C8 C10 C12 C14

C2

C1

C18

C17

C3

C4

C20

C16

0805

0805

C23

C24

C22

C22

C24 C24

C24 C24

C23

C23

VddVgg

Single Carrier WCDMA Pow er SweepsVdd = 28 V, Idq = 700 mA

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

24 26 28 30 32 34 36 38 40 42 44 46

Pout (dBm)

Gai

n (d

B) &

PA

R (d

B)

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

45.0

50.0

Effi

cien

cy (%

)

Gain (dB)

PAR (dB)

Eff. (%)

MRF7S21080H Standard Device2-Tone CW Video Bandwidth Test - Pout = 45 dBm

Vdd = 28 V, Idq = 700 mA - Center Frequency = 2.14 GHz

-60.00

-55.00

-50.00

-45.00

-40.00

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0.10 1.00 10.00 100.00

Tone Spacing (MHz)

Inte

rmod

ulat

ion

Dis

tort

ion

(dB

c)

IMD3-L IMD3-U IMD5-L IMD5-U IMD7-L IMD7-U

IMD3 (dBc)

IMD5 (dBc)

IMD7 (dBc)

2080 2090 2100 2110 2120 2130 2140 2150-90

-80

-70

-60

-50

-40

-30

-20

Frequency (MHz)

Pow

er (d

B)

UncorrectedCorrected

Ref 5.4 dBm Att 20 dB

A

Center 1.9588 GHz Span 30 MHz3 MHz/

*

*

RBW 30 kHz

VBW 300 kHz

SWT 35 ms

AVG*1 RM

-90

-80

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-10

0

SWP 25 of 25

1

Marker 1 [T1 ]

-22.50 dBm

1.963319231 GHz

1

Delta 1 [T1 ]

-39.18 dB

1.250000000 MHz

Date: 3.APR.2007 21:58:45

TM


MRF6VP41KH device and circuit models

Vdd

Vgg

Vdd

Vgg

MAIN AMPLIFIER WITH INPUT & OUTPUT MATCHING NETWORKS

sc_atc_100_CDR14BG_F_19960828C64PART_NUM=ATC100B330FP500 33pF




MLINTL27

L=350 milW=82.0 milSubst="MSub1"

COAXTL47

Rho=1TanD=0.002Er=2.1L=BLEN milDo=117 milDi=64 mil




CC24C=470 uF

S2PSNP15File="C:\users\default\MRF6VP2600_prj\data\Coilcraft\A01Tmini.S2P"

2

1

Ref

sc_atc_100_CDR14BG_J_19960828C35PART_NUM=ATC100B241JP200 240pF




PortOutBiasNum=4

LL6

R=L=500.0 nH

CC2C=470 uF

PortInputNum=1

COAXTL48

Rho=1TanD=0.002Er=2.1L=BLEN milDo=117 milDi=64 mil

MLINTL9

L=250 milW=82 milSubst="MSub1"

PortOutputNum=2

I_ProbeID_FET4

PortInBiasNum=3



MRF6V2150N_Level0X2

Dr ainG at e

MRF6V2150N_Level0X1

Dr ainG at e


VARVAR2

Win1=400 {t} {o}Lin1=400 {t} {o}Lout2=110 {-t}Lout1=425 {-t}BLEN=2060 {-t}

EqnVar

MLINTL55

L=Lin1 milW=Win1 milSubst="MSub1"

MLINTL38

L=Lin1 milW=Win1 milSubst="MSub1"

S2PSNP14File="C:\users\default\MRF6VP2600_prj\data\Coilcraft\A01Tmini.S2P"

2

1

Ref

MLINTL54


MLINTL42


MLINTL53

L=Lout2 milW=210 milSubst="MSub1"

MLINTL32


MLINTL5


MLINTL52


MLINTL51


MLINTL34


S2PSNP9File="C:\users\default\MRF6VP2600_prj\data\Coilcraft\B10Tmini.S2P"

2

1

Ref

S2PSNP8File="C:\users\default\MRF6VP2600_prj\data\Coilcraft\B10Tmini.S2P"

2

1

Ref

I_ProbeID_FET5

I_ProbeID_FET1

TM


MRF6VP41KH/HSROOT Model- 450 MHz

200 400 600 800 1000 12000 1400

-20

-15

-10

-25

-5

Pout_avg_WdB

(IRL)

Pout_W_meas

IRL_

mea

s

200 400 600 800 1000 12000 1400

17

18

19

20

21

16

22

Pout_avg_W

Gp

Pout_W_meas

Gp_

mea

s

200 400 600 800 1000 12000 1400

20

30

40

50

60

10

70

Pout_W_meas

Dra

in_E

ff_m

eas

Pout_avg_W

Dra

in_e

ff2 4 6 8 10 12 140 16

200

400

600

800

1000

1200

0

1400

Pin_W_meas

Pout

_W_m

eas

Pin

Pout

_avg

_W

Figure 1. Gain, IRL, Drain Efficiency versus Pout and Output Power versus Pin

ROOT ModelMeasured

TM


MRF6VP2600H-Small signal simulation

S_ParamSP1

Step=5 MHzStop=230.0 MHzStart=165 MHz

S-PARAMETERS

FSL_MRF6VP2600H_TECH_INCLUDEFSL_MRF6VP2600H_TECH_INCLUDE

FSL_TECH_INCLUDE

V_DCG26Vdc=50 V

TermTerm2

Z=50 OhmNum=2

V_DCSRC4Vdc=2.544 V

V2_input_layout_cosimuV2_input_matching1

FSL_MRF6VP2600H_Level1_Rev0_MODELFETFSL1

CTH=-1RTH=-1TSNK=-1

Output_21kh_layout_cosimulation_revise_v2Output_matching_21kh1

StabFactStabFact1StabFact1=stab_fact(S)

StabFact

TermTerm1

Z=50 OhmNum=1

Accurate model for device

TM


MRF6VP2600H-Model base simulation- S-parameter verification

S-Parameter Results – 200 MHz to 300 MHzMeasurement using a TRL method with Z0TRL = 5 OhmsIdq=2600mA

freq (200.0MHz to 300.0MHz)

S(1,

1)

freq (200.0MHz to 300.0MHz)S(

2,2)

1. S11 and S22 on Smith Chart

Red is simulation

Black measurements

TM


Input Parameters

For Stabil ity Circles

vin1

Project Name: Master Project ADS v 4p5Test Bench: MP_lp-contour-gcomp-1toneData Set: MP_lp-contour-gcomp-1toneData Display : MP_lp-contour-gcomp-1toneDate: Jul 20, 2009

vload

Vs_highVs_low

1 T o ne L oa d P u l l T e st Be n c hw i t h c o n t ours a nd st a b i l i t y c i rc le sa t X d B Com pre ssio n Ga in

Set Load and Source impedances atharmonic frequencies

One Tone Load Pull Simulation; X dB Gain Compression output power and PAE found at each fundamental load impedance

Specif y desired Load Tuner cov erage: s11_rho is the radius of the circle of ref lection coef f icients generated. Howev er, the radius of the circle will be reduced if it would otherwise go outside the Smith Chart.s11_center is the center of the circle of generated ref lection coef f icientspts is total number of ref lection coef f icients generatedZ0 is the sy stem ref erence impedance

VARSweepEquations

Z0=50pts=100s11_center =polar(.78,179)s11_rho =0.2

EqnVar

XDBHB1

GC_XdB=dB_Gain_CompOrder[1]=5Freq[1]=RFfreq

GAIN COMPRESSION

ParamSweepSweep1

PARAMETER SWEEP

ParamSweepSweep2

PARAMETER SWEEP

L_StabCircleL_StabCircle1L_StabCircle1=l_stab_circle(S,51)

LStabCircle

OptionsOptions1

MaxWarnings=10GiveAllWarnings=yesI_AbsTol=1e-3 AI_RelTol=1e-3V_AbsTol=1e-3 VV_RelTol=1e-3Tnom=25Temp=25

OPTIONS

VARSTIMULUS

dB_Gain_Comp=1.0Vlow=2.544Vhigh=50RFfreq=225 MHz

EqnVar

P_1TonePORT1

Freq=RFfreqP=dbmtow(20)Z=2+j*4Num=1

FSL_MRF6VP2600H_TECH_INCLUDEFSL_MRF6VP2600H_TECH_INCLUDE

FSL_TECH_INCLUDE

FSL_MRF6VP2600H_Level1_Rev0_MODELFETFSL1

CTH=-1RTH=-1TSNK=-1

LLf2L=1 H

I_ProbeIload

LL1L=1 H

VARVAR2

Zs3 =Z0 + j*0Zs2 =Z0 + j*0Zsfund =10 + j*0Zs0=0.00001 + j*0Zl3 =Z0 + j*0Zl2 =Z0 + j*0Zl0 =0.00001 + j*0

EqnVar

CC1C=1.0 mF

CC2C=1.0 mF

S_StabCircleS_StabCircle1S_StabCircle1=s_stab_circle(S,51)

SStabCircle

S_ParamSP1

S-PARAMETERS

VARglobal ImpedanceEquations

isrc = min(iload,length(SrcArray))SrcArray =list((Zs0),Zsfund,(Zs2), (Zs3),Z0,Z0)Z_s = SrcArray[isrc];Source impedances=fg(x) =50*((1.0 + x)/(1.0-x))iload = int(min(abs(freq)/RFfreq+1.5,length(LoadArray)))LoadArray =list((Zl0),fg(indexs11),(Zl2),(Zl3), Z0, Z0)ZLoadTuner = LoadArray[iload];Tuner reflection coefficient=

EqnVar

I_ProbeIin1

I_ProbeIs_low

V_DCSRC1Vdc=Vlow

I_ProbeIs_high

TermTerm2

Z=ZLoadTunerNum=2

V_DCSRC2Vdc=Vhigh

MRF6VP2600H-Load-pull simulation

TM


MRF6VP2600H- Large signal simulation results

m1Pout_fund_W=plot_vs(P_gain_transducer, Pout_fund_W)=21.560RFfreq=2.250000E8

197.696


604.837


257.455


600.404

100 200 300 400 500 600 700 8000 900

20

21

22

23

19

24

Pout_fund_W

P_ga

in_t

rans

duce

r

m1

m2

m3m4


197.696


604.837


257.455


600.404

m5Pout_fund_W=plot_vs(Ef f , Pout_fund_W)=27.735RFfreq=1.750000E8

151.814

100 200 300 400 500 600 700 8000 900

20

40

60

0

80

Pout_fund_W

Eff

m5

m5Pout_fund_W=plot_vs(Ef f , Pout_fund_W)=27.735RFfreq=1.750000E8

151.814

18 20 22 24 26 28 30 32 34 3616 38

200

400

600

800

0

1000

RFpower

Pout

_fun

d_W

m7Pout_fund_W=plot_vs(dB(IRL), Pout_fund_W)=-6.944RFfreq=2.250000E8

555.050


245.760


602.262

100 200 300 400 500 600 700 8000 900

-20

-10

-30

0

Pout_fund_W

dB(IR

L)m7

m8 m9


555.050


245.760


602.262

TM


MRF6VP2600H-Co-simulation with SCH and Layout

TM


LDMOS Part Nomenclature

M RF 6 VP 2 600 N R1M RF 6 VP 2 600 N R1Device StatusM – ProductionP – Prototype

Device StatusM – ProductionP – Prototype

Design Characteristics:RF – Radio Frequency DeviceHV – High Voltage DeviceE – Enhanced RuggednessW – Wideband DeviceMG – Monolithic GaAsD – Dual Path Device

Design Characteristics:RF – Radio Frequency DeviceHV – High Voltage DeviceE – Enhanced RuggednessW – Wideband DeviceMG – Monolithic GaAsD – Dual Path Device

Generation of LDMOS5 – 5th Gen LDMOS6 – 6th Gen7 – 7th Gen8 – 8th Gen3 – TV Broadcast

Generation of LDMOS5 – 5th Gen LDMOS6 – 6th Gen7 – 7th Gen8 – 8th Gen3 – TV Broadcast

Device TypeH – HFETS – Single EndedP – Push PullIC – Integrated CircuitG – GaAsV – Very High Voltage

Device TypeH – HFETS – Single EndedP – Push PullIC – Integrated CircuitG – GaAsV – Very High Voltage

Freq Band38 – 3800 MHz35 – 3500MHz27 – 2700 MHz24 – 2400 MHz21 – 2100MHz19 – 1900MHz 18 – 1800MHz9 – 900MHz4 – 400 MHz2 – 200 MHz

Freq Band38 – 3800 MHz35 – 3500MHz27 – 2700 MHz24 – 2400 MHz21 – 2100MHz19 – 1900MHz 18 – 1800MHz9 – 900MHz4 – 400 MHz2 – 200 MHz

P1dB Output Power Capability (in watts)010 – 10 W100 – 100W1K – 1 kW

P1dB Output Power Capability (in watts)010 – 10 W100 – 100W1K – 1 kW

Package DetailsG – Gull Wing Surface MountH – Low Rth CeramicN – RoHS Compliant

Overmolded PlasticB – Bolt Down Overmolded PlasticS – Earless PackageL – Low Gold

Package DetailsG – Gull Wing Surface MountH – Low Rth CeramicN – RoHS Compliant

Overmolded PlasticB – Bolt Down Overmolded PlasticS – Earless PackageL – Low Gold

Tape and Reel SizeT1 – (500 or 1,000)R1 – 500R2 – 1,500R3 – 250R4 – 100R5 – 50R6 – 150 R7 – 25

Tape and Reel SizeT1 – (500 or 1,000)R1 – 500R2 – 1,500R3 – 250R4 – 100R5 – 50R6 – 150 R7 – 25

TM


Support & Documentation

►DOCUMENTATION• Product summary pages available online• Data sheets for all devices available• 50 V RF LDMOS White Paper

►SAMPLES / BOARDS• Samples of all devices are available• Application demo boards available • Production quantities available

►MODELS• Large-signal product models –• External model library recently updated!

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Down load more info at..www.freescale.com/rfpower

http://www.freescale.com/rfpower

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A Breakthrough Technology for High Power RF … Class C operation Exceptional efficiency: •28% (DVB-T OFDM Signal, 64 QAM) •45% (Two-tone Test) Leading efficiency and low thermals

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