Th3G-6 A 20.8–41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process C. Wang 1 , Y. Chen 1 , J. Tsai 2 , T. Huang 1 1 Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan 2 Department of Electrical Engineering, National Taiwan Normal University, Taipei, Taiwan
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Th3G-6
A 20.8–41.6-GHz Transformer-Based
Wideband Power Amplifier with 20.4-dB Peak
Gain Using 0.9-V 28-nm CMOS Process
C. Wang1, Y. Chen1, J. Tsai2, T. Huang1
1Graduate Institute of Communication Engineering,
National Taiwan University, Taipei, Taiwan2Department of Electrical Engineering,
National Taiwan Normal University, Taipei, Taiwan
Th3G-6
Outline
• Motivation
• Reported Works
• Circuit Design
• Experimental Results
• Summary
2
Th3G-6
Outline
• Motivation
• Reported Works
• Circuit Design
• Experimental Results
• Summary
2
Th3G-6
• MMW frequency range for 5G NR: 24.25 – 52.6 GHz (FR2)
4
Motivation
24 29 37 52 GHz
Multiple
T/RXs
Multiple
T/RXs
Wideband T/RX
Th3G-6
• Wideband MMW PA
–Allows flexibility for spectrum utilization
–Simplifies the assembly process for multi-band transmitters
–Lower costs of front-ends components
• PAs consume most of the power in the transmitter system
–High efficiency
5
Motivation
Th3G-6
Outline
• Motivation
• Reported Works
• Circuit Design
• Experimental Results
• Summary
2
Th3G-6
• Procress: 45-nm SOI CMOS
• Topology: Mixed-Signal Doherty
• Small-signal gain BW3dB:22.35-34.5 GHz
• Operating frequency: 27 GHz
• Gain: 19.1 dB
• Psat: 23.3 dBm
• PAEMAX: 40.1%
• Core size: 0.52 mm2
7
Reported Works I
F. Wang, T. Li and H. Wang, "4.8 A highly linear super-resolution mixed-signal Doherty power
amplifier for high-efficiency mm-wave 5G multi-Gb/s communications," 2019 IEEE International
Solid- State Circuits Conference - (ISSCC), San Francisco, CA, USA, 2019, pp. 88-90
Th3G-6
• Procress: 28-nm CMOS
• Topology: 2 stage Class-AB CS
• Small-signal gain BW3dB:29-57 GHz
• Operating frequency: 30 GHz
• Gain: 20 dB
• Psat: 16.6 dBm
• PAEMAX: 24.2%
• Core size: 0.16 mm2
8
Reported Works II
M. Vigilante and P. Reynaert, “A wideband class-AB power amplifier with 29–57-GHz AM–PM compensation
in 0.9-V 28-nm bulk CMOS,” IEEE J. Solid-State Circuits, vol. 53, no. 5, pp. 1288–1301, May 2018
Th3G-6
Outline
• Motivation
• Reported Works
• Circuit Design
• Experimental Results
• Summary
2
Th3G-6
• Smaller transistor cell
– higher gain and PAE
• Deep-class AB bias
– lower quiescent Pdc
– linear operation close to Psat
10
PA Architecture
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9-150
-100
-50
0
50
100
150
200
Tra
ns
co
nd
ucta
nce
[m
A/V
]
VGS
[V]
gm1
gm2
gm3
S
M1
M1
CPAD
Vg,DACn,DA
Cn,DA
Vd,DA
M2
M2
Vg,PACn,PA
Cn,PA
Vd,PA
G
G
S
CPAD
G
G
RFin RFout
Driver Stage:
M1 = 5 × ( 1 m × 32f )
Power Stage:
M2 = 12 × ( 1 m × 32f )
Cn,DA = 35 fF
CPAD = 47 fF
Cn,PA = 91 fF
Th3G-6
• Capacitive Neutralization, Cn = 91fF
• MSG/MAG turning point move from 100 GHz to 10 GHz
• Higher gain and stability
11
Neutralization Technique
0 20 40 60 80 100 1200
10
20
30
40
50
MS
G /
MA
G [
dB
]
Frequency [GHz]
w.i. Cn
w.o. Cn
Cn Cn
Vin+ Vin
-
Vout-
Vout+
S. Shakib, H. Park, J. Dunworth, V. Aparin and K. Entesari, "A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm
CMOS," IEEE Journal of Solid-State Circuits, vol. 51, no. 12, pp. 3020-3036, Dec. 2016.
Th3G-6
• Transformer with two coupled resonant capacitors
• Calibration-free
• Cpad= 47 fF, Cparasitic= 477 fF
12
Output Broadband Matching
M1
M7
M8
M9
AP
M3
:
: :
Zopt*
RFoutCPAD
GND (M1 to M7)
GND
(M1 to M8)
VD,PA
VD,PA
io+
io-
GND (M1 to M3)
L1 (M9+AP)
Z-axis
Z-axis
Cpar
RFout
(50Ω )CPADVd,PA
Cparasitic
io+
io-
L1 L2
L2 (M8+M7)
Th3G-6
Outline
• Motivation
• Reported Works
• Circuit Design
• Experimental Results
• Summary
2
Th3G-6
• The core area is 0.1 mm2
— 500μm × 200μm
• Output matching with AP layer
— darker metal
• TSMC 28-nm CMOS process
14
Chip Micrograph
500μm
200μm
Th3G-6
• DC condition
– Bias: Vg,DA = 0.38 V, Vg,PA = 0.32 V
– Supply voltage: VDD= 0.9 V
– Pdc: 39.6 mW
• S-parameters
– Peak gain: 20.4 dB @ 23 GHz
– 3-dB bandwidth: 20.8 – 41.6 GHz
(66.7% fractional bandwidth)
15
Simulation & Measured S-parameters
0 10 20 30 40 50-40
-30
-20
-10
0
10
20
30
40
S-p
ara
me
ters
[d
B]
Frequency [GHz]
Sim. S11
Meas. S11
Sim. S21
Meas. S21
Sim. S22
Meas. S22
Th3G-6
• PAEMAX stays above 25% from 22 to 41 GHz
• Psat > 15dBm from 23 to 38.5 GHz
16
Measured CW Performance
20 22 24 26 28 30 32 34 36 38 40 42 448
10
12
14
16
18
20
22
24
PSAT
PAEMAX
OP1dB
Frequency [GHz]
Po
ut [
dB
m]
0
5
10
15
20
25
30
35
40
PA
EM
AX [%
]
Th3G-6
• Modulated Signal
– 64-QAM OFDM
– Bandwidth: 100MHz
– PAPR: 9.7 dB
• Under EVM of -25 dB– 8.5% PAE and 7.2 dBm Pout
@ 23 GHz
– 8.8% PAE and 6.9 dBm Pout
@ 41 GHz
17
Modulation Measurements
EVM = -25.1 dB
BW = 100 MHz
EVM = -25.4 dBc
BW = 100 MHz
23 GHz
41 GHz
Th3G-6
Ref. This work TCASI’19 IMS’19 JSSCC’18 RFIC’18 ISSCC’19 RFIC’18