◎ SEMIHOW REV.A0, March 2017 HCS80R380R Super Junction MOSFET Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested TO-220F Parameter Value Unit BV DSS @T j,max 850 V I D 14 A R DS(on), max 0.38 Ω Qg , Typ 18 nC Key Parameters Package & Internal Circuit HCS80R380R 800V N-Channel Super Junction MOSFET Features Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Motor Control & LED Lighting Power DC-DC Converters Symbol Parameter Value Units V DSS Drain-Source Voltage 800 V V GS Gate-Source Voltage ±30 V I D Drain Current – Continuous (T C = 25℃) 14 * A Drain Current – Continuous (T C = 100℃) 8.9 * A I DM Drain Current – Pulsed (Note 1) 42 * A E AS Single Pulsed Avalanche Energy (Note 2) 490 mJ dv/dt MOSFET dv/dt ruggedness, V DS =0…640V 50 V/ns dv/dt Reverse diode dv/dt, V DS =0…640V, I DS ≤I D 15 V/ns P D Power Dissipation (T C = 25℃) 32 W T J , T STG Operating and Storage Temperature Range -55 to +150 ℃ T L Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Absolute Maximum Ratings T J =25℃ unless otherwise specified March 2017 D G S * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R θJC Junction-to-Case -- 3.9 ℃/W R θJA Junction-to-Ambient -- 62.5
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SEMIHOW REV.A0, March 2017
HC
S80R380R
Super Junction MO
SFET
Very Low FOM (RDS(on) X Qg)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
TO-220F
Parameter Value Unit BVDSS @Tj,max 850 V
ID 14 A RDS(on), max 0.38 Ω
Qg, Typ 18 nC
Key Parameters
Package & Internal Circuit
HCS80R380R 800V N-Channel Super Junction MOSFET
Features
Application Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Motor Control & LED Lighting Power
DC-DC Converters
Symbol Parameter Value Units
VDSS Drain-Source Voltage 800 V
VGS Gate-Source Voltage ±30 V
ID
Drain Current – Continuous (TC = 25) 14 * A
Drain Current – Continuous (TC = 100) 8.9 * A
IDM Drain Current – Pulsed (Note 1) 42 * A
EAS Single Pulsed Avalanche Energy (Note 2) 490 mJ