1 www.gs-power.com GSM9575S GSM9575S 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-18A,R DS(ON) =68mΩ@V GS =-10V -60V/-12A,R DS(ON) =78mΩ@V GS =-4.5V Super high density cell design for extremely low R DS (ON) TO-252-2L package design Applications GSM9575S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent R DS(ON) , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter Packages & Pin Assignments GSM9575SDF(TO-252-2L) Pin Description 1 Gate 2 Source 3 Drain
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1 www.gs-power.com
GS
M95
75S
GSM9575S 60V P-Channel Enhancement Mode MOSFET
Product Description Features
-60V/-18A,RDS(ON)=68mΩ@VGS=-10V -60V/-12A,RDS(ON)=78mΩ@VGS=-4.5V Super high density cell design for extremely
low RDS (ON) TO-252-2L package design
Applications
GSM9575S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter
Packages & Pin Assignments
GSM9575SDF(TO-252-2L)
Pin Description
1 Gate
2 Source
3 Drain
2
GS
M95
75S
www.gs-power.com
Ordering Information
GS P/N
GSM9575S D F
Package Code
Halogen Free/Pb Free Code
Part Number Package Quantity Reel
GSM9575SDF TO-252-2L 2500 PCS
Marking Information
GS P/N
Lot CodeDate Code
AAAAAABBBBBB
9575S
Absolute Maximum Ratings TA=25ºC unless otherwise noted
Symbol Parameter Typical Unit
VDSS Drain-Source Voltage -60 V
VGSS Gate –Source Voltage ±20 V
TA=25ºC -18 ID Continuous Drain Current(TJ=150)
TA=70ºC -12
IDM Pulsed Drain Current -50
IS Continuous Source Current(Diode Conduction) -10
IAS Single Pulse Avalanche Current -12
A
EAS Avalanche Energy L = 0.1 mH
23 mJ
TA=25ºC 40 PD Power Dissipation
TA=70ºC 15 W
TJ Operating Junction Temperature 150 ºC
TSTG Storage Temperature Range -55/150 ºC
RθJA Thermal Resistance-Junction to Ambient 62.5 ºC/ W