4W DC/DC converter Specifications • TECHNICAL FEATURES : – Power : 4 W – Input Voltage : 22V to 37V – Output Voltage : One Adjustable Output above 3 adjustable ranges – 2,5V to 4V/1,2A for a 3,3V Output, – 3,5V to 6V/0,8A for a 5,0V Output, – 8,5V to 14V/0,33A for a 12,0V Output. – Efficiency : 72 % Min – Protections : Primary Undervoltage lockout, Output regulation from 0 to 100% load, Permanent output current limitation – Telecommand : Inhibit function – Switching frequency : 330 KHz • PACKAGING : – Dimensions : 32 x 21 x 10,5 mm – Weight : 20 g. Transformer and coils layer Power layer Regulation layer
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4W DC/DC converter Specifications TECHNICAL FEATURES : –Power : 4 W –Input Voltage : 22V to 37V –Output Voltage : One Adjustable Output above 3 adjustable.
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4W DC/DC converterSpecifications
• TECHNICAL FEATURES : – Power : 4 W– Input Voltage : 22V to 37V– Output Voltage : One Adjustable Output above 3 adjustable ranges
– 2,5V to 4V/1,2A for a 3,3V Output,– 3,5V to 6V/0,8A for a 5,0V Output, – 8,5V to 14V/0,33A for a 12,0V Output.
Output regulation from 0 to 100% load, Permanent output current limitation
– Telecommand : Inhibit function– Switching frequency : 330 KHz
• PACKAGING :– Dimensions : 32 x 21 x 10,5 mm– Weight : 20 g.
Transformer and coils layer
Power layer
Regulation layer
Efficiency of 3D DC/DC Converter between 78,7 % for the BiCMOS 12,0 V and 64,9 % for the Bipolar 3,3 V
Some Efficiency loss may be due to 3D Module plating thickness and output voltage range programming possibility (impedance mismatch and loss in the planar transformer)
• DC/DC Reference Parametric TID Level (Krads) Functional TID Level (Krads)Bipolar 3,3V 50 -
Bipolar 12,0V 50 - BiCMOS 3,3V 24 40
BiCMOS 12,0V 15 24
– Radiation Tolerance of 3D DC/DC Converter between 15 Krads for the BiCMOS 12,0 V and 50 Krads for the Bipolar 3,3 V and 12,0 V
– Radiation Performance of the 3D Module significantly better than the individual components (example : The BiCMOS PWM driver was out of the range at 5 Krads)
– Heavy ions tests will be completed by end 2004.
GLOBALLY SATISFACTORY RESULTS AND START OF THE 10 W DC/DC CONVERTER DEVELOPMENT IN 2003 UNDER ESA CONTRACT.
DC/DC Converters using 3D Plus technology10W DC/DC converter
• Development of the 10W DC/DC converter started with an
ESA contract (design by GAIA and packaging by 3D PLUS)– Minimum change introduced in the 10W converter parts list
(compared to the 4W converter)– Based on 4W study, only Bipolar technology was implemented
– Topology design for 5V only (evolution to 3,3V, 10V, 12V and 15 V with minor modifications)
– TID and Heavy Ions tests to be performed at two levels :• Individual test of the critical components
• Test at Final Product level
10W DC/DC converterSpecifications
• TECHNICAL FEATURES :
– Power : 10 W– Input Voltage : 22V to 37V– Output Voltage : One Adjustable Output 5,0V/2A– Output Ripple : 50 mVpp– Set Point Accuracy : +/- 2%– Line Regulation : +/- 0,6 %– Load Regulation : +/- 0,6 %– Efficiency : > 75 % Full Load
– Protections : - Primary Under Voltage Off/On threshold 18V/20V, - Output regulation from 0 to 100% load (Permanent), - Permanent Output Current limitation
– On/Off Telecommand– Master/Slave parallelization possibility for high Power requirements
(Synchronization)
– Input Filter (differential mode)– EMI (MIL-STD-416C) with external filter– Isolation 100 MOhm @ 500 V
• PACKAGING :– Dimensions : 40 x 26 x 12 mm– Weight : 45 g.
10W DC/DC converterDevelopment progress status
• Breadboard fully compliant to specification
• 3D DC/DC converter design completed and 5 prototypes under manufacturing
• 3D Modules (5) to be tested by end 2004
• Radiation tests :– TID test to be performed in November 2004
– Heavy Ions test on stand alone components are planned for november 2004
– Heavy Ions test on DC/DC Converter are planned for Q1/ 2005
4W and 10W DC/DC convertersAvailability
Product Available Off-the-Shelf with EM and FM quality gradeProduct Under DevelopmentProduct to be developed with minor topology changes
DC/DC Converter
Power
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
4 W
10 W
3,3 V
5,0 V
12,0 V
5,0 V
3,3 V
12,0 V
15,0 V
Output Voltage (V)
10,0 V
Background of 3D Plus Packaging Technology
ESA/CNES Capability Approval Methodology
• The capability Approval sequence of events :– Evaluation testing phase– Process Identification Document (PID)– Approval testing phase
• Implementation with the 3D Plus stacking technology: a coordinated effort of ESA and CNES :– Evaluation phase and PID Draft completed in august 2001
• Definition of material and processes to be evaluated• Design of the test structure and PID draft• Manufacturing of test structures and Evaluation testing• Complementary Evaluation testing by NASA-GSFC
– Approval phase started in September 2001• Manufacturing of test structures according to PID (completed feb. 2004)• Testing phase (completed april 2004)• Completion of PID and associated procedures (outstanding action)
Evaluation PhaseTechnology Domain
1) Flex Design
2) Component assembly
3) Circuit Test & Screening
6) Cube Sawing
5) Cube Molding
9) Cube Test & Screening
4 ) Layers stacking
7) Cube plating (Ni+Au)
8) Circuit interconnection by laser grooving
Evaluation PhaseCESAR = Cnes ESA thRee d-plus
Flex 2
Flex 3
Flex 1
Flex 4
Flex 5 Flex 6
Flex 7
Flex 8
Flex 9
Flex 10
CESAR 3D module : 114 I/O
Evaluation PhaseCESAR = Cnes ESA thRee d-plus
– CESAR included 4 TSOP 64 Mb, 8 chip capacitors, 8 chip resistors, 2 thermal sensors, 2 mechanical constraint sensors.