Main Product Characteristics S1 Schematic Diagram Features and Benefits Absolute Maximum Ratings (T C =25°C unless otherwise specified) Fast switching and reverse body recovery Advanced MOSFET process technology Ideal for high efficiency switched mode power supplies Low on-resistance with low gate charge 1/8 DFN3X3 Asymmetric Dual Pin Description The GSFN9810 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. 30V Dual N-Channel MOSFET GSFN9810 Q1 Q2 V DSS 30V 30V R DS(ON)(Max.) 10.5mΩ 10.5mΩ I D 19.5A 19.5A D1 D1 G2 S2 G1 D1 S2 S2 D1 S2 S2 S2 G2 S1/D2 G1 G2 D1 D2 S2 Parameter Symbol Q1 Q2 Unit Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ±20 ±20 V Drain Current – Continuous (TC=25°C) 19.5 19.5 A Drain Current – Continuous (TC=100°C) 12.3 12.3 A Drain Current – Continuous (TA=25°C) 10.8 10.8 A Drain Current – Continuous (TA=100°C) 6.8 6.8 A Drain Current – Pulsed 1 IDM 78 78 A Single Pulse Avalanche Energy 2 E AS 13 13 mJ Single Pulse Avalanche Current 2 I AS 16 16 A Power Dissipation (TC=25°C) 27 27 W Power Dissipation – Derate above 25°C 0.01 0.01 W/°C Storage Temperature Range TSTG °C Operating Junction Temperature Range TJ °C -55 to +150 -55 to +150 ID PD D1 D1 D1 G1
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Transcript
Main Product Characteristics
S1
Schematic Diagram
Features and Benefits
Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Fast switching and reverse body recovery
Advanced MOSFET process te chnology
Ideal for high efficiency switched mode power suppliesLow on-resistance with low gate charge
1/8
DFN3X3Asymmetric
Dual Pin
Description The GSFN9810 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications.
30V Dual N-Channel MOSFETGSFN9810
Q1 Q2
VDSS 30V 30V
RDS(ON)(Max.) 10.5mΩ 10.5mΩ
ID 19.5A 19.5A D1 D1
G2 S2
G1 D1
S2 S2
D1
S2 S2 S2 G2
S1/D2 G1 G2
D1 D2
S2
Parameter Symbol Q1 Q2 Unit
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±20 V
Drain Current – Continuous (TC=25°C) 19.5 19.5 A
Drain Current – Continuous (TC=100°C) 12.3 12.3 A
Drain Current – Continuous (TA=25°C) 10.8 10.8 A
Drain Current – Continuous (TA=100°C) 6.8 6.8 A
Drain Current – Pulsed1 IDM 78 78 A
Single Pulse Avalanche Energy2 EAS 13 13 mJ
Single Pulse Avalanche Current2 IAS 16 16 A
Power Dissipation (TC=25°C) 27 27 W
Power Dissipation – Derate above 25°C 0.01 0.01 W/°C