2SD1047 Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 7 TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-3P Plastic Package. 用于 60W 音频功率输出,与 2SB817 互补。 For 60W audio frequency amplifier output stage, Complementary to 2SB817. 用于音频放大电路。 Designed for use in audio frequency amplifier. PIN1:Base PIN 2:Collector PIN 3:Emitter 放大及印章代码 / h FE Classifications & Marking 描述 / Descriptions 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning h FE Range 80~160
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2SD1047 Rev.E Mar.-2016 DATA SHEET · 2018. 11. 2. · For 60W audio frequency amplifier output stage, Complementary to 2SB817. 用于音频放大电路。 Designed for use in audio
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2SD1047 Rev.E Mar.-2016 DATA SHEET
http://www.fsbrec.com 1 / 7
TO-3P 塑封封装 NPN� 半导体三极管。Silicon NPN transistor in a TO-3P Plastic Package. �
用于 60W 音频功率输出,与 2SB817 互补。�For 60W audio frequency amplifier output stage, Complementary to 2SB817.
用于音频放大电路。�Designed for use in audio frequency amplifier.
PIN1:Base PIN 2:Collector PIN 3:Emitter
放大及印章代码 / hFE Classifications & Marking
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
hFE Range 80~160
2SD1047 Rev.E Mar.-2016 DATA SHEET
http://www.fsbrec.com 2 / 7
参数
Parameter 符号
Symbol 数值
Rating 单位 Unit
Collector to Base Voltage VCBO 160 V
Collector to Emitter Voltage VCEO 130 V
Emitter to Base Voltage VEBO 6 V
Collector Current - Continuous IC 12 A
Base Current ICP 15 A
Collector Power Dissipation PC(TC=25 )℃ 100 W
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -40~150 ℃
参数
Parameter 符号
Symbol测试条件
Test Conditions 最小值
Min 典型值
Typ 最大值Max
单位Unit
Collector to Emitter Breakdown Voltage VCEO IC=50mA IB=0 130 V
Collector Cut-Off Current ICBO VCB=80V IE=0 0.1 mA
Emitter Cut-Off Current IEBO VEB=4.0V IC=0 0.1 mA
DC Current Gain hFE(1) VCE=5.0V IC=1.0A 80 160
hFE(2) VCE=5.0V IC=6.0A 20 Collector to Emitter Saturation Voltage VCE(sat) IC=6.0A IB=0.6A 0.6 2.5 V
Base to Emitter Voltage VBE VCE=5.0V IC=5.0A 1.5 V
Transition Frequency fT VCE=5.0V IC=1.0A f=1.0MHz 15 MHz