2.1 Electrical characteristics (curves ...DocID026016 Rev 1 3/16 STD80N4F6 Electrical ratings 16 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Symbol

This is information on a product in full production.

March 2014 DocID026016 Rev 1 1/16

STD80N4F6

Automotive-grade N-channel 40 V, 5.5 mΩ typ., 80 A

STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package

Datasheet − production data

Figure 1. Internal schematic diagram

Features

• Designed for automotive applications and

AEC-Q101 qualified

• Low gate charge

• Very low on-resistance

• High avalanche ruggedness

Applications• Switching applications

DescriptionThis device is an N-channel Power MOSFET

developed using the 6th

generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on)

in all packages.

DPAK

1

3

TAB

Order code VDS RDS(on) max ID

STD80N4F6 40 V 6 mΩ 80 A

Table 1. Device summary

Order code Marking Package Packaging

STD80N4F6 80N4F6 DPAK Tape and reel

www.st.com

Contents STD80N4F6

2/16 DocID026016 Rev 1

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

DocID026016 Rev 1 3/16

STD80N4F6 Electrical ratings

16

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS

Drain-source voltage 40 V

VGS

Gate-source voltage ± 20 V

ID

(1)

1. Current limited by package.

Drain current (continuous) at TC

= 25 °C 80 A

ID

(1)Drain current (continuous) at T

C = 100 °C 56 A

IDM

(2)

2. Pulse width limited by safe operating area

Drain current (pulsed) 320 A

PTOT

Total dissipation at TC

= 25 °C 70 W

IAV

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJmax

)

40 A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, I

D = I

AV, V

DD = 25 V)

149 mJ

Derating factor 0.47 W/°C

Tstg

Storage temperature

-55 to 175

°C

Tj

Max. operating junction temperature °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case

Thermal resistance junction-case max 2.14 °C/W

Rthj-pcb

(1)

1. When mounted on FR-4 board of inch2, 2 oz Cu

Thermal resistance junction-pcb max 50 °C/W

Electrical characteristics STD80N4F6

4/16 DocID026016 Rev 1

2 Electrical characteristics

(TC

= 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID

= 250 μA, VGS

= 0 40 V

IDSS

Zero gate voltage

drain current (VGS

= 0)

VDS

= 40 V 1 μA

VDS

= 40 V, TC

=125 °C 100 μA

IGSS

Gate-body leakage

current (VDS

= 0)

VGS

= ± 20 V ± 100 nA

VGS(th)

Gate threshold voltage VDS

= VGS

, ID

= 250 μA 2 4 V

RDS(on)

Static drain-source

on-resistance

VGS

= 10 V, ID

= 40 A 5.5 6 mΩ

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Input capacitance

VDS

= 25 V, f = 1 MHz,

VGS

= 0

- 2150 - pF

Coss Output capacitance - 335 - pF

Crss

Reverse transfer

capacitance

- 160 - pF

Qg

Total gate chargeV

DD = 20 V, I

D = 80 A,

VGS

= 10 V

(see Figure 14)

- 36 - nC

Qgs

Gate-source charge - 11 - nC

Qgd

Gate-drain charge - 9 - nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

td(on)

Turn-on delay time

VDD

= 20 V, ID

= 40 A,

RG

= 4.7 Ω, VGS

= 10 V

(see Figure 15)

- 10.5 - ns

tr

Rise time - 7.6 - ns

td(off) Turn-off delay time - 46.1 - ns

tf

Fall time - 11.9 - ns

DocID026016 Rev 1 5/16

STD80N4F6 Electrical characteristics

16

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

Source-drain current - 80 A

ISDM

(1)

1. Pulse width limited by safe operating area.

Source-drain current (pulsed) - 320 A

VSD

(2)

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage ISD

= 40 A, VGS

= 0 - 1.3 V

trr

Reverse recovery time

ISD

= 80 A, di/dt = 100 A/μs

VDD

= 32 V (see Figure 17)

- 41.1 ns

Qrr

Reverse recovery charge - 43.6 nC

IRRM

Reverse recovery current - 2.1 A

Electrical characteristics STD80N4F6

6/16 DocID026016 Rev 1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

ID

10

1

0.10.1 1 VDS(V)10

(A)

Operation in

this

area is

Limite

d by max R

DS(on)

10ms

1ms

100µs

Tj=175°CTc=25°C

Singlepulse

100

AM15599v1

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

ID

150

100

50

00 4 VDS(V)

(A)

2

200

VGS= 4 V

VGS= 5 V

VGS= 6 V

VGS= 7, 8, 9, 10 V

AM15600v1ID

60

40

20

02 4 VGS(V)6

(A)

3 5 7

80

100

8

VDS= 2 V

120

140

9 10

180

AM15601v1

VGS

6

4

2

00 10 Qg(nC)

(V)

40

8

20 30

10

VDD=20V

ID=80A12

AM15602v1RDS(on)

5.5

5

4.5

40 40 ID(A)

(mΩ)

20 60

6

6.5

80

VGS= 10V

AM15603v1

DocID026016 Rev 1 7/16

STD80N4F6 Electrical characteristics

16

Figure 8. Capacitance variations Figure 9. Drain-source diode forward characteristics

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on-resistance vs temperature

Figure 12. Normalized v(BR)DSS vs temperature

C

1500

1000

500

00 20 VDS(V)

(pF)

10 30

Ciss

CossCrss

40

2000

2500

AM15352v1 VSD

0 40 ISD(A)

(V)

20 60 800

0.2

0.4

0.6

0.8

1.0TJ=-50°C

TJ=150°C

TJ=25°C

AM15604v1

VGS(th)

0.6

0.4

0.2

0-75 -25 TJ(°C)

(norm)

-50

0.8

500 25 75 100

1ID=250 µA

125

1.2

AM15354v1 RDS(on)

1.5

1

0TJ(°C)

(norm)

0.5

ID=40AVGS=10V

-75 0-50 75-25 50 10025 125

2

150

AM15356v1

V(BR)DSS

-75 0 TJ(°C)

(norm)

-50 75-25 50 1000.6

0.7

0.8

0.9

1

1.1

ID = 1mA

25 125

1.2

1.3

150

AM15353v1

Test circuits STD80N4F6

8/16 DocID026016 Rev 1

3 Test circuits

Figure 13. Switching times test circuit for resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM05540v1

Inductive Load Turn - off

Id

Vgs

Vds

90%Vds

10%Id

90%Vgs on

td(v)

tc(off)

10%Vds

90%Id

Vgs(I(t))

on

tf(i)tr(v)

))

DocID026016 Rev 1 9/16

STD80N4F6 Package mechanical data

16

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK is an ST trademark.

Package mechanical data STD80N4F6

10/16 DocID026016 Rev 1

Figure 19. DPAK (TO-252) type A drawing

0068772_M_type_A

DocID026016 Rev 1 11/16

STD80N4F6 Package mechanical data

16

Table 8. DPAK (TO-252) type A mechanical data

Dim.mm

Min. Typ. Max.

A 2.20 2.40

A1 0.90 1.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 5.10

E 6.40 6.60

E1 4.70

e 2.28

e1 4.40 4.60

H 9.35 10.10

L 1.00 1.50

(L1) 2.80

L2 0.80

L4 0.60 1.00

R 0.20

V2 0° 8°

Package mechanical data STD80N4F6

12/16 DocID026016 Rev 1

Figure 20. DPAK (TO-252) type A footprint (a)

a. All dimensions are in millimeters

Footprint_REV_M_type_A

DocID026016 Rev 1 13/16

STD80N4F6 Packaging mechanical data

16

5 Packaging mechanical data

Figure 21. Tape for DPAK (TO-252)

P1A0 D1

P0

F

W

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. onlyincluding draft andradii concentric around B0

AM08852v1

Top covertape

Packaging mechanical data STD80N4F6

14/16 DocID026016 Rev 1

Figure 22. Reel for DPAK (TO-252)

Table 9. DPAK (TO-252) tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 6.8 7 A 330

B0 10.4 10.6 B 1.5

B1 12.1 C 12.8 13.2

D 1.5 1.6 D 20.2

D1 1.5 G 16.4 18.4

E 1.65 1.85 N 50

F 7.4 7.6 T 22.4

K0 2.55 2.75

P0 3.9 4.1 Base qty. 2500

P1 7.9 8.1 Bulk qty. 2500

P2 1.9 2.1

R 40

T 0.25 0.35

W 15.7 16.3

A

D

B

Full radius G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At sl ot location

T

Tape slot in core fortape start 25 mm min.width

AM08851v2

DocID026016 Rev 1 15/16

STD80N4F6 Revision history

16

6 Revision history

Table 10. Document revision history

Date Revision Changes

03-Mar-2014 1

Initial release. The part number previously included in datasheet

DocID023839

STD80N4F6

16/16 DocID026016 Rev 1

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