1 NPC NEUTRAL PHYSICS CORPORATION Accelerated Neutral Atom Beam (ANAB) Processing for Atomic Layer Etch (ALE) E. Barth, C. Huffman, F. Goodwin, S. Papa Rao, B. O’Brien, D. Steinke, M. Rodgers, B. Sapp, S. Kirkpatrick, M. Walsh, R. Svrluga July 25, 2016
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2016-07-21 Accelerated Neutral Atom Beam Processing for ......Jul 21, 2016 · 1 NPC NEUTRAL PHYSICS CORPORATION Accelerated Neutral Atom Beam (ANAB) Processing for Atomic Layer Etch
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NPCNEUTRAL PHYSICS CORPORATION
Accelerated Neutral Atom Beam (ANAB)Processing for Atomic Layer Etch (ALE)
E. Barth, C. Huffman, F. Goodwin, S. Papa Rao, B. O’Brien, D. Steinke, M. Rodgers, B. Sapp,
The nanometer‐scale modified layer is formed rapidly ANAB layer thickness is self‐limiting Layer thickness can be tailored by the process conditions utilized
Rates measured on 50nm line‐width, 90nm pitch structures with ~1:1 AR Similar removal rates and anisotropy observed on ~100um wide structures Anisotropy can be increased further by using O2 doped Ar ANAB coupled
ANAB‐based ALE is manufacturable: Self‐limiting ANAB layer thickness for wide process window ANAB layer thickness controllable by simple process variables Relatively benign, inexpensive chemistries for the in‐situ vapor etch step
ANAB is anisotropic – vertical sidewalls can be maintained ANAB tooling compatible with a 30‐45 wafer per hour throughput.
ANAB processes characterized on dielectrics (SiN, SiCN, etc) and metals (Cu, Co, Pt, etc)