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TABLE OF CONTENTS
S.No Ti!" o# $" E%"'i(") P*+".No O,- Vi* R"/o' Si+)
1#o%erin! of #i&2e Eectronic
Circuit*
3 Characteristics of 4N %io%e /
* #taircase 5irin! 11
6uorescent a&2 7irin! 1*
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on a 'ench !rin%er$ is so&eti&es use% to carefuy re&oe ery seere o8i%ation, thou!h this
&ay ris9 %a&a!in! the ti2s 2rotectie iron 2atin!) A s&a a&ount of fresh so%er is usuay then
a22ie% to the cean ti2 in a 2rocess cae% tinnin!) The 7or9in! surface of the ti2 is usuay 9e2ttinne% (coate% 7ith 7et so%er$ to &ini&i
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#o%erin! Iron E82ose% Fie7
4erf 'oar%
Co&2onent #i%e #o%er #i%e
CIRCUIT DIAGRAM
BC 547 Pin details
.
G.F
**0 H
1 KH
LED
BC .Transistor
C
B
E
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E4.NO.2 CHARACTERISTICS OF PN DIODE
Ai(
To o'tain the FI characteristics of a 4N Dio%e)
E56i(")-
S.NO APPARATUS RANGE UANTITY
1 Re!uate% 4o7er su22y (0*0$F, 3A 1
3 Di!ita Muti&eter (01$F(0*0$F
Each one
* A&&eter (0.0$ &A
(0100$ AEach one
4N Dio%e IN001 1
. Resistor 1 KH, 15 1
/ Brea%'oar% 1
Connectin! 5ires 6e7
D"-/'iio)
4N ;unction %io%e is a se&icon%uctor %eice constructe% 7ith the foo7in! t7o
se&icon%uctor &aterias(i$ 4ty2e se&icon%uctor &ateria
(ii$ Nty2e se&icon%uctor &ateria
The 2ty2e &ateria is for&e% 'y %o2in! a triaent i&2urity to the 2ure se&icon%uctorsuch as #iicon or +er&aniu&) It for&s hoes as &a;ority carriers an% eectrons as &inority
carriers)
The nty2e se&icon%uctor is for&e% 'y %o2in! a 2entaaent i&2urity into the 2ure
se&icon%uctor) It for&s eectrons as &a;ority carriers an% hoes as &a;ority carriers) The currentfo7s in 4N ;unction %io%e %ue to 'oth the &a;ority an% &inority carriers) 6or a 4N ;unction
%io%e, there are t7o ty2es of Biasin! ðo%s na&ey (i$ 6or7ar% 'ias " (ii$ Reerse 'ias
Fo'7*' ,i*-i)+
The 4ty2e se&icon%uctor (Ano%e$ is connecte% to the 2ositie ter&ina of the DC
2o7er su22y an% Nty2e se&icon%uctor (Catho%e$ is connecte% to the ne!atie ter&ina of the
su22y) 5ith this for7ar% 'ias, the hoes in the 4re!ion an% eectrons in the Nre!ion &oe
coser to the ;unction) The 7i%th of the %e2etion re!ion re%uces an% 2otentia 'arrier asore%uces)
This re%uce% 'arrier 2otentia resuts in increase% fo7 of &a;ority carriers) The &a;ority
carrier hoe of 4si%e fo7 across the ;unction to Nsi%e an% &a;ority carrier eectron of Nsi%efo7 to 4si%e) This 7i cause &a8i&u& current to fo7 in the %io%e in the for7ar% %irection
un%er for7ar% 'ias con%ition)
/
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R""'-" ,i*-i)+
The 4ty2e se&icon%uctor (Ano%e$ is connecte% to ne!atie of 2o7er su22y an% Nty2e
se&icon%uctor (Catho%e$ is connecte% to 2ositie of 2o7er su22y) 5ith this 2oarity ofconnection, hoes in the 4re!ion an% eectrons in the Nre!ion &oe a7ay fro& the ;unction)
Thus 7i%th of %e2etion re!ion increases an% 2otentia 'arrier aso increases)
This re%uces the fo7 of &a;ority carriers across the ;unction to other si%e) But, the fo7of &inority carriers re&ains unchan!e%) As a resut, a ery s&a reerse current 7i fo7 in the%io%e un%er reerse 'ias con%ition)
P'o/"6'"
Fo'7*' Bi*-i)+
S"- D"-/'iio)
1 Connections are !ien as sho7n in 6i!)3)
3 The in2ut ota!e is arie% 'y aryin! the Re!uate% 4o7er #u22y (R4#$)
* The corres2on%in! ota!e across the %io%e (F6
$ an% the ano%e current (I6
$aues are note% an% ta'uate%)
The FI characteristics of the 4N ;unction %io%e un%er for7ar% 'ias
con%ition is %ra7n usin! the aues as sho7n in 6i!))
R""'-" ,i*-i)+
S"- D"-/'iio)
1 The connections are !ien as sho7n in 6i!)*)
3The in2ut ota!e is arie% 'y aryin! the Re!uate% 4o7er #u22y(R4#$)
* The corres2on%in! ota!e across the %io%e (FR$ an% the ano%e current(IR$ are note% an% ta'uate%)
The FI characteristics of the 4N ;unction %io%e un%er reerse 'iascon%ition is %ra7n usin! the aues as sho7n in 6i!))
R"-6!
Thus the FI characteristics of a 2n ;unction %io%e is o'taine% an% 2otte% on the !ra2h)
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Fig.1 Symbol of PN Junction Diode
Fig.2 Circuit diagram for forward bias condition
Fig.3 Circuit diagram for reverse bias condition
IN 4007
A
!0"#$ %IN 400&
& !0"&00$ mA
A
JA
' '
(P)
!0 * 30$ % %
!0"30$ %IN 400&
&
!0"&00$ +A
A
J
A
''
(P)!0 * 30$ % %
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TABULATION:
FORWARD BIAS CONDITION
).No%oltage across t,e -iode
%F !volts$Anode current IF!mA$
&
#
3
4
5
7
/
&0
REVERSE BIAS CONDITION
).No%oltage across t,e -iode
%(!volts$Anode current I(!A$
&
#
3
4
5
7
/
&0
-
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Fig.4 %"I C,aracteristics of a PN 1unction diode%( " (everse voltage2I( " (everse current2%F " Forard voltage2IF " Forard current2%B " Brea don voltage2
E%. No)3 STAIR CASE WIRING E4ERCISE
%C" Cut * off voltage
10
IF!ma$
I(
!A$
%B
%(!%$ %
F!%$
Forard Bias
%C
(everse Bias
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ESTIMATION OF THE MATERIALS
M*"'i*! S"/i#i/*io) 6*)i85ire FIR Insuate%, Cu 7ire si
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E% No .: WIRING E4ERCISE OF A FLUORESCENT LAMP CIRCUIT
AIM
a$ To %ra7 a neat circuit %ia!ra&
'$ To cacuate the si
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Therefore current throu!h the circuit,
5here, F Fota!e ratin!s of the a&2,CosO 4o7er factor of the circuit)
As the circuit contains ony incan%escent a&2 oa%s, 2o7er factor of the circuit &ay 'eassu&e% to 'e unity) Kno7in! the current throu!h the circuit, the si2osition 1 or 3, the a&2 7i !o7) 5hen one of the s7itches is in 2osition 1 an% the other in
2osition 3 the a&2 7i not !o7)
RESULT
6uorescent a&2 7irin! e8ercise is %one an% teste% the circuit)
1
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1.
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ESTIMATION OF THE MATERIALS
M*"'i*! S"/i#i/*io) 6*)i85ire FIR Insuate%, Cu 7ire si