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1.0um CMOS PROCESS FLOW INTRODUCTION
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1.0um Cmos Process Flow Introduction

Mar 19, 2016

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Page 1: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

Page 2: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

1.Wafer Start P TYPE <100>,8-12OHM-CM2.Wafer laser mark3.Scrubber clean after wafer laser mark4.C1 clean5.Pad oxide(1000 deg C;Tox:350 ang)6.Si3N4 deposition(Thickness:1500 ang)

P-TYPE

s061312
与RCA C1 clean 有什么区别
s061312
??
Page 3: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

7.RCA C1 clean8.After Si3N4 deposition inspection9.PR coat (JSR-7980;TK=1.22u;SVG=111;TEL=1)10.N well alignment exposure(192)

P-TYPE

PR

s061312
与 C1 CLEAN
s061312
??都代表什么?
Page 4: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

11.Develop PR(MF320,NON-CD;JSR-7980;SVG=77;TEL=7)12.ADI check13. Hard-bake(1180C 35min)14.Si3N4 dry-etch(490ABC: Si3N4 )15.Pad thickness-measure(after Si3N4 etch)16.N-Well implant(P31/100keV/1.0E13)

P-TYPE

PR

N-WELL

P31

s061312
??
s061312
作用?
s061312
做什么?
Page 5: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

17.Ashing(PSC Partial-strip:poly,codeimp)18.Photoresist stripping(H2SO4)19.After-etch inspection20.Standard clean21.Well oxidation(5F1,2,4/6F1;980 DEG C;Tox:6000 ang)22.BOE(Buffer Oxide Etching) 10:1 Wet-etch(BOE7,BOE9:30sec)

P-TYPE

PR

N-WELL

s061312
去光阻后总有? 有什么作用?与C1 RCA C1 啥有区别
s061312
为什么不用光阻？而用ＯＸ
s061312
每次进行pr祛除的时候都要进行??有什么作用?
s061312
都检查些什么??
Page 6: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

23.Si3N4-1 Stripping(Hot H3PO4 , low ratio, PCS.X2 )24.Pad thickness-measure(After Si3N4 Strip.Tox=350)25.After -etch inspection26.P-Well implant(IMP-MED)(B11/100keV/6.5E12)27.CR clean(second H2SO4 tank)28.C1 clean29.Well diffusion(1150 deg C;2200 ang;VD=1.5hrs)

P-TYPE

N-WELL

B11

P-WELL

s061312
作用与C1, RCA CA ,STANDARD CLEAN 区别
s061312
??
Page 7: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

30.BOE 10:1 Wet-etch(BOE7,BOE9:12 min 0 sec)31.After-etch inspection32.C1 clean33.Pad oxide (1000 deg C;Tox:350 ang)34.Si3N4 deposition (Thickness:1500 ang)35.RCA C1 clean

P-TYPE

N-WELLP-WELL

Page 8: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

36.After Si3N4 deposition inspection37.PR coat (V3;TK=1.26u;SVG=141)38. Si3N4 (120) align exposure(Si3N4 1500:Pad oxide 350)39.Develop PR (MF320; Si3N4 ;V3;SVG=31;TEL=3)40. Si3N4 ADI CD MEAS(Spec+ -0.12)(1.0 CMOS)SNDM12C1(Spec=1.6+ -0.12)41.ADI Check42.Hard bake

P-TYPE

N-WELLP-WELL

s061312
检测都检测什么？
s061312
作用：High temperature than other bake module Purpose: 1. Remove developer residue 2. Increase anti-etching capacity 3. Increase adhesion 4. Reduce pin hole defect
s061312
1. ADI (After Developer Inspection): 检查显影后晶片的状况是否正常，如 : Particle , PR lifting ,Mask Error, Repeating defect , Scratch …..2. ADI CD (ADI Critical Dimension): 测量显影后的线宽是否合乎要求.3. Overlay : 测量显影后俩层间的对准是否符合标准
Page 9: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

43. Si3N4 Dry-etch (490ABC: Si3N4 )44.Pad thickness-measure(after Si3N4 -etch)45.Ashing (PSC Partial-strip:poly,codeimp)46.Photoresist stripping (H2SO4)47.After-ecth inspection48.Si3N4 AEI-CD(1500/350/5X(V3):S60) (Spec=1.6+ -0.15(1.6))

P-TYPE

N-WELLP-WELL

Page 10: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

49.PR coat (JSR-7980;TK=1.6u;SVG=221;TEL=2)50.P-Field implant alignment exposure(193/191)51.Develop PR (MF320,NON-CD;JSR-7980;SVG=77;TEL=7)52.ADI Check53.P-Field implant(IMP-MED)(B11/25keV/5.0E13)

P-TYPE

N-WELLP-WELL

PR

s061312
P-Field 作用? FOX吸硼析磷
Page 11: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

54.Ashing(PSC Partial-strip:poly,codmimp)55.Photoresist stripping(H2SO4)56.After-etch inspection57.Standard clean58.Field oxide (5F1,2,4/6F1;980 DEG C;6000 ang)59.BOE 10:1 Wet-etch(BEO7,BEO9:30sec)

P-TYPE

N-WELLP-WELL

PRFOX

Page 12: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

60. Si3N4 –2 Stripping (Hot H3PO4)61.Pad thickness-measure(After Si3N4 Strip.Tox=350 )62.After-etch inspection63.HF 50:1 Pad oxide remove (9 min)64. Standard clean

P-TYPE

N-WELLP-WELL

FOX

Page 13: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

65.SAC oxide (920 DEG C;Tox:350 ang)66.VT implant(IMP-MED)(B11/25keV/2.5E12)67. CR clean(second H2SO4 tank)68. HF 50:1 SAC oxide 350 ang remove (9 min)69.C1 clean

P-TYPE

N-WELLP-WELL

FOX

B11

Page 14: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

70.GATE OX(920 DEG C;Tox:200 ang)71.Poly deposition (630 deg c;3500 ang)72.Standard clean73.N+Poly dope (950 DEG C;9-12 OHM/SQ)74. 5% HF Poly deglaze (HF 5%;3 min)

P-TYPE

N-WELLP-WELL

FOX

Page 15: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

75.C1 clean76.PR coat (V3;TK=1.23u;SVG=161)77.Poly(130) align exposure(poly 3500)78.DEV PR(MF320;poly;V3;SVG=31;TEL=3)79.Poly(130) ADI CD MEAS(SPEC+ -0.12)(1.0COMS) PODM12C (SPEC=0.12+ -0.12(1.2))

P-TYPE

N-WELLP-WELL

FOX

Page 16: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

80.ADI&OVERLAY check (+ -0.35;1.0CMOS;poly)81.Hard-bake (118C 35min)82.Poly etch equipment ID confirm83.PO-ET(4420AB:3500;5000AB:3500)84.After-etch inspection85.HF1% Wet clean (HF 1%:20sec)

P-TYPE

N-WELLP-WELL

FOX

s061312
选择性好／
Page 17: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

86.Ashing (PSC partial-stripping:poly,codeimp)87.Photoresist stripping(H2SO4)88.After-etch inspection (poly after PR strip)89.PO AEI-CD(3500/200:S60) (SPEC=1.20+ -0.15 (1.2))90.Standard clean91.PRE S/D oxidation(3F1,4/4F1,4;920 DEG C;150 ang)

P-TYPE

N-WELLP-WELL

FOX

Page 18: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

92.PR coat (JSR-7980;TK=1.6u;SVG=221;TEL=2)93.N- implant alignment exposure (198/116)94.Develop PR (MF320,NON-CD;JSR-7980;SVG=77;TEL=7)95.ADI Check

P-TYPE

N-WELLP-WELL

FOX

Page 19: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

96.N-(LDD) implant(IMP-MED;TILT 0 DEG) (P31/60keV/2.5E13/0 DEG)97.Ashing (PSC partial-strip;poly,codeimp)98.PR stripping (H2SO4)99.After-etch inspection100.Standard clean

P-TYPE

N-WELLP-WELL

FOX

Page 20: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

101.TEOS Deposition (7E3/9F2;3000 ang)102.Spacer ecth equipment ID confirm

P-TYPE

N-WELLP-WELL

FOX

Page 21: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

103.Spacer ecth equipment ID confirm104.Spacer dry-etch (4520AB:3000)105.Thickness-measure(FOX&Tox After spacer etch)106.Standard clean107.PRE S/D Oxidation(3F1,4/4F1,4;950 DEG C;200 ang)

P-TYPE

N-WELLP-WELL

FOX

Page 22: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

108.PR coat (JSR-7980;TK=1.6u;SVG=221;TEL=2)109.N+ implant alignment exposure (198/116)110.Develop PR (MF320,NON-CD;JSR-7980;SVG=77;TEL=7)111.ADI Check112.Hard bake (125C 30min)

P-TYPE

N-WELLP-WELL

FOX

Page 23: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

113. N+ implant (IMP-HI)(AS75/80keV/5.5E15)114.Ashing (PSC:CAP-IMP, N+ ,P+,CONTACT,CONTIMP,SA-POLY)115.PR Stripping (H2SO4)116.After-etch inspection

P-TYPE

N-WELLP-WELL

FOX

Page 24: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

117. PR coat (JSR-7980;TK=1.6u;SVG=221;TEL=2)118. P+ implant alignment exposure (197)119. Develop PR (MF320,NON-CD;JSR-7980;SVG=77;TEL=7)120. ADI Check121. Hard bake (125C 30min)122. P+ S/D implant (IMP-HI)(B11/25keV/2.8E15)

P-TYPE

N-WELLP-WELL

FOX

Page 25: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

123.Ashing (PSC:CAP-IMP, N+ ,P+,CONTACT,CONTIMP,SA-POLY)124. PR Stripping (H2SO4)125. After-etch inspection126. Standard clean

P-TYPE

N-WELLP-WELL

FOX

Page 26: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

127.BPSG Desposition (WJ999;7500 ang;Bwt%=2.5,Pwt%4.4)128.BPSG Flow (3F1,4/4F1,4;920 DEG C;N2/O2;105 ang)129. CR clean(second H2SO4 tank)130. PR coat (V3;TK=1.26u;SVG=141)131.Contact layer alignment exposure (156/157)132. DEV PR(MF320;poly;V3;SVG=31;TEL=3)133.Contact ADI CD MEAS(Spec=1.2+ - 0.12(1.2))(1.0COMS)CODM12C1 (Spec=1.2+ -0.12(1.2))

P-TYPE

N-WELLP-WELL

FOX

Page 27: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

134.ADI&OVERLAY CHECK(+ -0.35;1.0COMS;Contact)135.Hard bake (118C 35min)136.Descum (MTX1,MTX2:Descum)137.Contact wet-etch (BPSG Tox=4500 ang Remained)138.Hard bake (118C 35min)

P-TYPE

N-WELLP-WELL

FOX

Page 28: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

139.Contact dry-etch equipment ID confirm140.Contact dry-etch (4520AB:1560;8310AB:COMS-CO)141. After-etch inspection142. Ashing (PSC:CAP-IMP, N+ ,P+,CONTACT,CONTIMP,SA-POLY)

P-TYPE

N-WELLP-WELL

FOX

Page 29: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

143. PR Stripping (H2SO4)144. After-etch inspection (contact after PR strip)145. Standard clean146. BPSG Flow (3F1,4/4F1,4;900 DEG C;N2/O2;75 ang147.BOE 50:1 wet-etch (3min)

P-TYPE

N-WELLP-WELL

FOX

Page 30: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

148.BLM:Barrier metal (Ti 400A + TiW 1200A)149.Scrubber clean for TiW film150.BS:Metal-I Sputter for Al –Si –Cu 5000 ang

P-TYPE

N-WELLP-WELL

FOX

Page 31: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

151. PR coat (SPR-219;TK=1.95u;TEL=3;TEL’=13(HMDS))152.MET-1(160)Align(SPDM:5000AlSiCu/TiW/Ti)Focus + -0.5um153. DEV PR(MF320;poly;SPR-219;SVG=31;TEL=3)154.MET-1 ADI CD MEAS(spec+ -0.15)(1.0CMOS)M1DN15C1(spec=1.5+ -0.15(1.6))

P-TYPE

N-WELLP-WELL

FOX

Page 32: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

155.ADI&OVERLAY check(+ -0.35;1.0COMS;METAL-1)156.Hard bake(118C 50min)157.Metal dry-etch(8330ABCD:5000-AlSiCu)158. PR Stripping (EKC830)159. Ashing (PSC:MATEL)160. After-etch inspection (matel after PR strip)

P-TYPE

N-WELLP-WELL

FOX

Page 33: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

161.PEOXIDE Deposition(ND6200;3000ang)162.SOG coating(2300ang/recipe-2);the first coating163.SOG coating(2300ang/recipe-2);the second coating164.VAC-BAKE IN OBM AFTER SOG COATING165.SOG CURING (420 DEG,7F1/7F2)

P-TYPE

N-WELLP-WELL

FOX

Page 34: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

166.DI-WATER RINSE167.PEOXIDE deposition 5000ang168.Scrubber clean for ND6200 5000A PEOXIDE/PROG.8169. PR coat (V3;TK=1.55u;SVG=151)

P-TYPE

N-WELLP-WELL

FOX

Page 35: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

170.VIA layer alignment exposure(178)focus+(-0.5um)171.DEV PR(MF320;VIA;V3;SVG=31;TEL=3)172.VIA ADI CD measurement (spec+ -0.12um)(spec1.2+ -0.12(1.2))173.Hard bake

P-TYPE

N-WELLP-WELL

FOX

Page 36: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

174.Descum (MTX1,MTX2:descum)175.VIA wet-etch(SOG;Tox=3000ang being ecth)176.Hard bake (118C 35min)

P-TYPE

N-WELLP-WELL

FOX

Page 37: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

177.VIA dry-etch equipment ID confirm178.VIA dry-etch(590BC,8310AB:VIA;4520AB:1780)179.After-ecth inspection180.Ashing (PSC:VIA,PASSVATION)181.PR stripping(EKC830)

P-TYPE

N-WELLP-WELL

FOX

Page 38: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

182.After-etch inspection183.VAC-BAKE IN OBM BEFORE MET-2 SPUT(SILOXANE:58min)184.AM:metal-2 PRE-SPUT ETCH +TiW film185.Scrubber clean for Tiw film186.BT:Metal-2 sputter for Al-Si-Cu 9000 ang

P-TYPE

N-WELLP-WELL

FOX

Page 39: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

187. PR coat (SPR-219;TK=1.95u;TEL=3;TEL’=13(HMDS))188.MET-2(180)Align(9000 ang AlSiCu/Tiw)FOCUS+(-0.5um)189.DEV PR(MF320;METAL;SPR-219;TEL=13)

P-TYPE

N-WELLP-WELL

FOX

Page 40: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

190.MET-2 ADI CD MEAS(SPEC+ -0.2)(1.0COMS)M2DM20C1(SPEC=1.5+-0.20)191.ADI &OVERLAY CHECK(+ -0.35;1.0COMS;METAL-2)192.Hard bake(118C 50 min)

P-TYPE

N-WELLP-WELL

FOX

Page 41: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

193.Metal dry-ecth (8330ABCD:9000ang AlSiCu-TiW)194. PR stripping(EKC830)195.Ashing(PSC:METAL)196. After-ecth inspection(Metal-2 after PR strip)

P-TYPE

N-WELLP-WELL

FOX

Page 42: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

197.3%PSG Deposition(WJ999;5000ang;Pwt%=4.25)198.PE NITRIDE DEPOSITION(ASM,320 DEG C;7000ang)

P-TYPE

N-WELLP-WELL

FOX

Page 43: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

199. PR coat (SPR-219;TK=2.12u;SVG=281TEL=8;)200.Passivationlayer alignent exposure(107)201. DEV PR(MF320;NON-CD;JSR-7980;SVG=77;TEL=7)

P-TYPE

N-WELLP-WELL

FOX

Page 44: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

202. ADI CHECK203.Hard bake(118 C 35min)

P-TYPE

N-WELLP-WELL

FOX

Page 45: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

204.PASSIVATION Dry-etch (590ABC:TSIN+OX)205.AEI

P-TYPE

N-WELLP-WELL

FOX

Page 46: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

206.Ashing (PSV:VIA,PASSIVATION)207.PR Stripping(EKC830)

P-TYPE

N-WELLP-WELL

FOX

Page 47: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

208.AEI209.ALLOY(7F1/7F2;410 DEG C)210.Wafer accept test

P-TYPE

N-WELLP-WELL

FOX

Page 48: 1.0um Cmos Process Flow Introduction

1.0um CMOS PROCESS FLOW INTRODUCTION

THE END


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